Single FETs, MOSFETs
100 Volt N Channel MOSFET Bruckewell MSH100N020D Featuring Low RDS ON and RoHS Compliant Green Device
Product Overview The MSH100N020D is a high-performance N-Channel 100-V (D-S) MOSFET from Bruckewell Technology Corporation. Engineered with extreme high cell density, it offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. It is suitable for networking, load switch, and LED applications. Product
P Channel 60 Volt Mosfet Bruckewell MSL60P03 Designed for Led Applications and Motor Control Systems
Product Overview The MSL60P03 is a high-performance P-Channel 60-V (D-S) MOSFET featuring a super high-density cell design. This design enables low RDS(ON) and reduced gate charge, making it ideal for high-efficiency fast switching applications. The device meets RoHS and Green Product requirements and has undergone full function reliability approval. It is suitable for applications such as Motor Control, Net Working, and LED applications. Product Attributes Brand: Bruckewell
Power MOSFET Bruckewell MSH60N35D Dual N Channel Device Suitable for Load Switching and General Purpose
Product Overview The MSH60N35D is a Dual N-Channel MOSFET utilizing advanced Trench technology and design, engineered to deliver excellent RDS(ON) with low gate charge. This device is ideal for PWM, load switching, and general-purpose applications. It adheres to RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Product Attributes Brand: Bruckewell Technology Corporation Product Line: MSH60N35D Certifications: RoHS
Dual Channel MOSFET Bruckewell MSH30C16D Featuring High Cell Density and Operation for Power Management Systems
Product Overview The MSH30C16D is a high-performance N-channel and P-channel MOSFET designed with extreme high cell density. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. It is suitable for 4.5V gate drive applications and provides excellent CdV/dt effect decline. Product Attributes Brand:
Surface Mount P Channel MOSFET BORN SI2309S Featuring Trench Process Technology and Low On Resistance
Product Overview The SI2309S is a P-Channel MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is designed for surface mount applications and is suitable for load switches, switching circuits, and high-speed line drivers. This device offers a drain-source breakdown voltage of -60V and is available in a SOT-23-3L package. Product Attributes Brand: Not explicitly stated, but associated with www.born-tw.com Package
P Channel MOSFET Bruckewell MS60P03 60V with low reverse transfer capacitance and fast switching
Product Overview The MS60P03 is a high-performance P-Channel 60V MOSFET designed for high efficiency and fast switching applications. Featuring a super high-density cell design for low RDS(ON) and reduced gate charge, this device is ideal for motor control, networking, and LED applications. It meets RoHS and Green Product requirements and offers improved dv/dt capability and low reverse transfer capacitance. Product Attributes Brand: Bruckewell Technology Corporation Product
Low On Resistance N Channel MOSFET BORN 2SK3018 Suitable for Switching and Amplification Applications
Product Overview The 2SK3018 is an N-Channel MOSFET designed for various electronic applications. It features a drain-source voltage of 30V, a continuous drain current of 0.1A, and low on-state resistance. Key electrical characteristics include a gate threshold voltage ranging from 0.8V to 1.5V and a typical forward transconductance of 20mS. This MOSFET is suitable for applications requiring efficient switching and signal amplification, with typical output characteristics and
N Channel Power MOSFET BORN BMI10N331 with TO 252 2 Package and 30 Milliohm On Resistance at 10V Gate
Product Overview The BMI10N331 is an N-Channel MOSFET designed for various power management applications. It features a high breakdown voltage of 100V and a continuous drain current of 28A. Key advantages include low on-resistance (RDS(on) TYP=30m at VGS=10V), low Crss, fast switching speeds, and improved dv/dt capability. This MOSFET is suitable for load switching, PWM applications, and general power management tasks. Product Attributes Brand: BORN Model: BMI10N331 Package
P channel MOSFET Bruckewell MST26P05 designed for load switch and small power switching uses
Product Overview The MST26P05 is a high-performance P-channel MOSFET featuring advanced trench technology with extreme high cell density. It offers excellent RDS(ON) and low gate charge, making it ideal for various small power switching and load switch applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. Its typical applications include notebooks, load switches, and hand-held instruments. Product Attributes
SOT23 Package Lead Free P Channel MOSFET BORN SI2301F Suitable for Surface Mount and PWM Applications
Product Overview The SI2301F is a P-Channel MOSFET featuring advanced trench process technology for high power and current handling capability. It is designed for surface mount applications using the SOT-23 package. This product is lead-free. Ideal for PWM applications and load switching. Product Attributes Brand: Not explicitly stated, but associated with www.born-tw.com Package: SOT-23 Lead Free: Yes Revision: 2018 Technical Specifications Parameter Symbol Condition Min Typ
N Channel MOSFET Bruckewell MSD60N50 60 Volt Device with Low Miller Charge and Full Function Approval
Product Overview The MSD60N50 is an N-Channel 60-V (D-S) MOSFET from Bruckewell Technology Corporation. It utilizes advanced Trench technology and design to achieve excellent RDS(ON) with low gate charge, making it suitable for PWM, load switching, and general-purpose applications. This device is RoHS and Green Product compliant, with 100% EAS guaranteed and full functional reliability approval. Key features include low Miller charge, low input capacitance, and a guaranteed
N Channel MOSFET Bruckewell MSD65N045SB 65 Volt Featuring RoHS Compliance and Trench DMOS Technology
Product Overview The MSD65N045SB is an N-Channel 65-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is optimized to minimize on-state resistance (RDS(ON)), enhance switching performance, and improve the device's ability to withstand high energy pulses in avalanche and commutation modes. It is designed for high efficiency and fast switching applications. The device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function
P Channel 40 Volt MOSFET Bruckewell MSHM40P40 Featuring Trench DMOS Technology and Low On Resistance
Product Overview The MSHM40P40 is a P-Channel 40-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is optimized to minimize on-resistance (RDS(ON)), enhance switching performance, and provide robust high energy pulse handling in avalanche and commutation modes. It is well-suited for high-efficiency, fast-switching applications, including notebooks, load switches, networking equipment, and hand-held instruments. The device supports -4.5V gate drive
N Channel MOSFET Bruckewell MSD200N120 with high cell density and RoHS compliant green device status
Product Overview The MSD200N120 is a high-performance N-Channel MOSFET from Bruckewell Technology Corporation, designed with extreme high cell density for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, contributing to efficient performance. This device is RoHS and Green Product compliant, with 100% EAS guaranteed and full function reliability approved. Typical applications include networking, load switches, and LED lighting. Product
Trench DMOS N Channel MOSFET Bruckewell MSH100N055SB 100 Volt with Low RDS ON and Enhanced Switching
Product Overview The MSH100N055SB is an N-Channel 100-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize RDS(ON), enhance switching performance, and provide superior withstand capability in avalanche and commutation modes. It is ideally suited for high-efficiency, fast-switching applications. The device adheres to RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Typical
Trench Technology N Channel MOSFET BORN BMDFN2302 with Low Threshold Voltage and Compact DFN1006 3L Package
Product Overview The BMDFN2302 is an N-Channel MOSFET featuring Trench Technology and a supper high-density cell design. It offers excellent ON resistance for higher DC current and an extremely low threshold voltage, making it suitable for small signal switching and small motor driver applications. The device is available in a compact DFN1006-3L package. Product Attributes Brand: Born-TW (implied from www.born-tw.com) Technology: Trench Technology Cell Design: Supper high
N Channel 40 Volt MOSFET Bruckewell MSH40N065 Trench DMOS Technology for Fast Switching Applications
Product Overview The MSH40N065 is an N-Channel 40-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize RDS(ON), enhance switching performance, and provide robust high-energy pulse handling in avalanche and commutation modes. It is ideally suited for high-efficiency, fast-switching applications. The device is RoHS and Green Product compliant, with 100% EAS guaranteed and full function reliability approved. Typical applications
Low RDS on N Channel MOSFET BORN BMI02N400 with Excellent Thermal Stability and 80 Amp Drain Current
Product Overview The BMI02N400 is an N-Channel MOSFET designed for various power management applications. It features an extremely low RDS(on) of typically 3m at VGS=4.5V, offering excellent stability and uniformity. The advanced trench technology and robust package design ensure good heat dissipation, making it suitable for load switching and PWM applications. Key advantages include low gate charge and a maximum drain-source voltage of 20V with a continuous drain current of
60 Volt N Channel MOSFET Bruckewell MSP60N085 Featuring Low On Resistance and Robust Pulse Handling
Product Overview The MSP60N085 is a high-performance N-Channel 60-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize on-resistance (RDS(ON)), deliver superior switching performance, and provide robust high-energy pulse handling capabilities in avalanche and commutation modes. It is ideally suited for high-efficiency, fast-switching applications. The device meets RoHS and Green Product requirements and is 100% EAS guaranteed
switching N Channel MOSFET BORN BMF10N65 with 10A continuous drain current and RoHS compliant design
Product Overview The BMx10N65 is a high-performance N-Channel MOSFET from BORN SEMICONDUCTOR, INC. Designed for power switch circuits in adaptors and chargers, this MOSFET offers a VDSS of 650V and a continuous drain current (ID) of 10A. It features fast switching capabilities and low gate charge, making it an efficient component for power conversion applications. The device is constructed with molded plastic, rated UL Flammability Classification 94V-0, and is compliant with
