Single FETs, MOSFETs

Product Overview This product is a plastic-encapsulated N-channel MOSFET designed with a high-density cell for low RDS(ON). It functions as a voltage-controlled small signal switch, suitable for load switching in portable devices and DC/DC converters. Key features include a rugged and reliable design with high saturation current capability. The MOSFET is available in a SOT-363 package. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type:

Product Overview This N-Channel MOSFET is designed for load and power switching applications, offering low RDS(on) and operation at low logic-level gate drive. It is suitable for interfacing switching, battery management in ultra-small portable electronics, and logic-level shifting. The product is lead-free and comes in a surface mount package. Product Attributes Lead Free Product Surface Mount Package N-Channel Switch Logic Level Gate Drive Plastic Encapsulate MOSFETS

Product Overview The CEM3172 is an N-Channel Enhancement Mode Field Effect Transistor designed for high-performance applications. It features a super high dense cell design for extremely low RDS(ON) and high power and current handling capability. This surface mount package transistor is suitable for various industrial applications requiring efficient power switching. Product Attributes Brand: D D D D S S S G Model: CEM3172 Package: SO-8 Certifications: Lead free product is

Product Overview This N-Channel 20-V (D-S) TrenchFET Power MOSFET is designed for applications such as load switching in portable devices and DC/DC converters. It offers efficient power management with its advanced TrenchFET technology. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-323 Technology: TrenchFET Power MOSFET Technical Specifications Parameter Symbol Test Condition Min Typ Max Unit Maximum Ratings (Ta=25 unless

Product Overview These miniature surface mount MOSFETs are designed to reduce power loss and conserve energy, making them ideal for use in small power management circuitry. Key features include energy efficiency, low threshold voltage, and high-speed switching. The miniature surface mount package saves board space. Applications include DC-DC converters, load switching, and power management in portable and battery-powered products such as computers, printers, cellular, and

Product Overview The CEC2088E is an N-Channel Enhancement Mode Field Effect Transistor designed for high-performance applications. It features a super high dense cell design for extremely low RDS(ON) and high power and current handling capabilities. This transistor is suitable for applications requiring efficient power switching and management. Product Attributes Brand: CET-MOS (implied by URL) RoHS Compliant Lead-free plating ESD Protected: 2000 V Preliminary information on

Product Overview The CED83A3G/CEU83A3G is an N-Channel Enhancement Mode Field Effect Transistor designed for high-performance applications. Featuring a super high dense cell design, it offers extremely low RDS(ON) and high power and current handling capabilities. This transistor is available in TO-251 (I-PAK) and TO-252 (D-PAK) packages, making it suitable for various industrial and electronic applications requiring efficient power management. Product Attributes Brand: CET

Product Overview This P-Channel TrenchFET Power MOSFET, housed in a SOT-23 package, is designed for load switching in portable devices and DC/DC converters. It offers a 20V drain-source voltage rating and features a low on-resistance for efficient power management. The compact SOT-23 package makes it suitable for space-constrained applications. Product Attributes Package Type: SOT-23 Channel Type: P-Channel Technology: TrenchFET Power MOSFET Marking: 2301 Technical Specificat

Product Overview The CEM3178 is a Dual N-Channel Enhancement Mode Field Effect Transistor designed for high performance and efficiency. It features a super high dense cell design for extremely low RDS(ON) and offers high power and current handling capability. This surface mount package is suitable for various industrial applications requiring robust power switching. Product Attributes Brand: CETsemi Product Code: CEM3178 Package: SO-8 Lead Free: Yes Technical Specifications

Product Overview The CEM6867 is a Dual P-Channel Enhancement Mode Field Effect Transistor designed for high performance and efficiency. It features a super high dense cell design for extremely low RDS(ON) and high power and current handling capability. This surface mount package is suitable for various applications requiring robust power management. Key electrical characteristics include a drain-source voltage of -60V, continuous drain current of -3.1A, and low on-resistance

Product Overview This P-Channel TrenchFET Power MOSFET is designed for load switching in portable devices and DC/DC converters. It offers a -20V Drain-Source Voltage and a continuous drain current of -2.8A, with excellent on-resistance characteristics. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Type: P-Channel TrenchFET Power MOSFET Package: SOT523 Technical Specifications Parameter Symbol Test Condition Min Typ Max Unit Maximum Ratings (Ta

Product Overview This N-channel enhancement mode MOSFET is designed for surface mounting in a SOT-523 package. It offers low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speeds, making it suitable for various electronic applications. Key features include low input/output leakage and ESD protection up to 2kV. The device is lead-free and RoHS compliant. Product Attributes Packaging: Plastic-Encapsulate MOSFETS Package Type: SOT523

Product Overview These miniature surface mount P-CHANNEL MOSFETs are designed to reduce power loss and conserve energy, making them ideal for small power management circuitry. They offer energy efficiency, low threshold voltage, and high-speed switching in a miniature surface mount package that saves board space. Applications include DC-DC converters, load switching, and power management in portable and battery-powered products such as computers, printers, cellular, and

Product Overview This N-Channel Enhancement Mode Field Effect Transistor is designed with a high-density cell structure for low RDS(ON), enabling voltage-controlled small signal switching. It offers high saturation current capability and high-speed switching, making it suitable for various electronic applications requiring efficient and fast transistor performance. Product Attributes Package: SOT-23 Plastic Package Origin: Heyuan China Base Electronics Technology Co., Ltd.

Product Overview The 2N7002KW is an N-Channel MOSFET in a SOT-323 plastic-encapsulated package. It features a high-density cell design for low RDS(on), making it suitable as a voltage-controlled small signal switch. This MOSFET is rugged, reliable, and offers high saturation current capability, with ESD protection. It is designed for applications requiring efficient switching and low power dissipation. Product Attributes Package Type: SOT-323 Transistor Type: N-Channel MOSFET

Product Overview The CEM3120 is an N-Channel Enhancement Mode Field Effect Transistor designed for high performance and efficiency. It features a super high dense cell design for extremely low RDS(ON) and offers high power and current handling capabilities. This transistor is suitable for surface mount applications. Product Attributes Brand: CETSemi Product Type: N-Channel Enhancement Mode Field Effect Transistor Package: SO-8 Lead Free: Yes Technical Specifications Parameter

Product Overview This is a plastic-encapsulated Dual N-Channel MOSFET featuring the TrenchFET technology. It offers excellent RDS(on), low gate charge, and high power and current handling capabilities in a surface mount SOT-23-6L package. Key applications include battery protection, load switching, and power management. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-23-6L Technical Specifications Parameter Symbol Test Condition

Product Overview This N-Channel MOSFET is designed for high-side switching applications, offering low on-resistance and a low threshold voltage for efficient operation. It features fast switching speeds, making it suitable for driving relays, solenoids, lamps, and other loads in battery-operated systems, power supply converter circuits, and various load/power switching applications such as cell phones and pagers. The device is encapsulated in a plastic surface-mounted SOT-523

Product Overview This N-Channel Enhancement Mode MOSFET is designed for efficient power switching applications. It features low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speeds, making it suitable for various electronic circuits. The device offers low input/output leakage and is ESD protected up to 2kV. It is Lead Free By Design and RoHS Compliant. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd.

Product Overview This P-Channel TrenchFET Power MOSFET, housed in a SOT-23 package, is designed for efficient load switching in portable devices and DC/DC converters. It offers a -20V drain-source voltage rating and features low on-resistance for optimal power management. The compact SOT-23 package makes it suitable for space-constrained applications. Product Attributes Package Type: SOT-23 Plastic-Encapsulate Channel Type: P-Channel Technology: TrenchFET Power MOSFET Marking