Single FETs, MOSFETs

Product Overview This is a voltage-controlled small signal switch designed with a high-density cell for low RDS(ON). It offers rugged reliability and high saturation current capability, making it suitable for load switch applications in portable devices and DC/DC converters. The device is packaged in a SOT-23 small outline plastic package. Product Attributes Package Type: SOT-23 Epoxy UL Flammability Rating: 94V-0 Mounting Position: Any Technical Specifications Maximum

Product Overview This N-Channel Enhancement Mode Field Effect Transistor features a super high-density cell design for extremely low RDS(ON) and high power and current handling capability. Available in TO-220, TO-263, and TO-220F packages, this transistor is designed for efficient power management applications. It offers robust performance with high current and voltage ratings. Product Attributes Lead-free product is acquired. Technical Specifications Model VDSS (V) RDS(ON)

Product Overview The AO3401A-CN is a high-performance MOSFET designed for load switching, switching circuits, high-speed line drivers, and power management functions. It features low RDS(on) at VGS=-10V, -3.3V logic level control, and is RoHS compliant, Pb-Free, and Halogen Free. This device offers a VDS of -30V and continuous drain current (ID) of -4.2A at TA=25C. Product Attributes Brand: ChipNobo Certifications: RoHS Compliant, PbFree, Halogen Free Device Type: MOSFET

Product OverviewThe CMLDM8120 and CMLDM8120G* are surface mount silicon P-Channel enhancement-mode MOSFETs, manufactured using the P-Channel DMOS Process. They are designed for high-speed pulsed amplifier and driver applications, offering low on-resistance (rDS(on)) and low threshold voltage. These devices are logic-level compatible and come in a small SOT-563 package. Applications include load/power switches, power supply converter circuits, and battery-powered portable

Product Overview The CHM9407AJPT is a P-Channel Enhancement Mode Field Effect Transistor from CHENMKO ENTERPRISE CO.,LTD. Designed with a super high-density cell structure for extremely low RDS(ON), this surface mount transistor offers high power and current handling capability. It is suitable for applications such as servo motor control, power MOSFET gate drivers, and other switching applications. This lead-free product is available in a small flat SO-8 package. Product

Product Overview The SI2302CDS-T1-GE3-CN is a SOT-23 package component designed for use in residential and commercial equipment. It is a N-channel MOSFET with specific electrical characteristics and absolute maximum ratings suitable for various electronic applications. This product is intended for general-purpose use and is not designed for sensitive items or specialized equipment in areas with sanctions. Product Attributes Brand: ChipNobo Product Marking: SI2302CDS-T1-GE3-CN

Product Overview The CED12N10/CEU12N10 is an N-Channel Enhancement Mode Field Effect Transistor designed for high performance and efficiency. It features a super high dense cell design for extremely low RDS(ON), enabling superior power and current handling capabilities. Available in TO-251 (I-PAK) and TO-252 (D-PAK) packages, this lead-free product is suitable for various industrial applications. Product Attributes Brand: CET Semi Series: CEU Series, CED Series Product Type:

Product OverviewThe CENTRAL SEMICONDUCTOR CXDM3069N is a high current N-channel enhancement-mode silicon MOSFET designed for high-speed pulsed amplifier and driver applications. It offers high current capability, low on-resistance (rDS(ON)), a low threshold voltage, and low leakage current, making it suitable for load/power switches, power supply converter circuits, and battery-powered portable equipment.Product AttributesBrand: CENTRAL SEMICONDUCTORProduct Type: Surface

Product Overview The BC3401 is a P-Channel Enhancement Mode Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 2.5V. This device is well-suited for applications such as load switches or PWM applications. The BC3401 is a Pb-free product meeting ROHS & Sony 259 specifications, while the BC3401L is a Green Product ordering option. Both variants are electrically identical.

Product Overview The SOT-23 Plastic-Encapsulate P-Channel MOSFET, model BC2301, is a TrenchFET Power MOSFET designed for efficient load switching in portable devices and DC/DC converters. It offers a 20V drain-source voltage rating and features a compact SOT-23 package. Product Attributes Package Type: SOT-23 Channel Type: P-Channel Technology: TrenchFET Power MOSFET Marking: 2301 Technical Specifications Parameter Symbol Test Condition Min Typ Max Unit Maximum Ratings (Ta=25

Product Overview This P-Channel TrenchFET Power MOSFET, designed for SOT-323 packaging, offers a robust solution for load switching in portable devices and DC/DC converters. Its key features include a -20V drain-source voltage rating and a continuous drain current of -2.1A, making it suitable for demanding applications. The device is engineered for efficiency and reliability in compact electronic systems. Product Attributes Marking: 2301 Type: P-Channel 20-V(D-S) MOSFET

Product Overview The CB2301DW is a dual P-Channel MOSFET designed for load switching in portable devices and DC/DC converters. It features TrenchFET Power MOSFET technology and is housed in a SOT-363 package. This device offers efficient operation with low on-resistance characteristics. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Model Marking: 1DW Package Type: SOT-363 Technology: TrenchFET Power MOSFET Channel Type: Dual P-Channel Technical

Product Overview This SOT-23 packaged MOSFET features a high-density cell design for extremely low RDS(on) and exceptional on-resistance and maximum DC current capability. It is suitable for load/power switching and interfacing applications. The device is constructed with Epoxy UL 94V-0 rated material and can be mounted in any position. Product Attributes Package: SOT-23 Epoxy UL Flammability Rating: 94V-0 Mounting Position: Any Technical Specifications Parameters Symbol Test

Product Overview This N-channel MOSFET is designed for low on-resistance and fast switching speeds, making it ideal for portable equipment due to its low voltage drive capability. It offers easily designed drive circuits and is suitable for parallel applications. The device is a plastic-encapsulated MOSFET in a SOT-323 package. Product Attributes Marking: KN Brand: Heyuan China Base Electronics Technology Co., Ltd. Material: Plastic-Encapsulate MOSFETS Package: SOT-323

Product Overview This N-channel MOSFET is designed for low on-resistance and fast switching speeds. Its low voltage drive capability makes it ideal for portable equipment and allows for easily designed drive circuits. The device is also easily paralleled for increased current handling. It is housed in a SOT-323 plastic package. Product Attributes Marking: KN Package: SOT-323 Plastic Package Origin: Heyuan China Base Electronics Technology Co., Ltd. Technical Specifications

Product Overview The 2N7002KT is an N-Channel MOSFET designed for voltage-controlled small signal switching applications. It features a high-density cell design for low RDS(on), ensuring efficient operation. This rugged and reliable MOSFET offers high saturation current capability and is ESD protected. It is suitable for various applications requiring a dependable small signal switch. Product Attributes Type: N-Channel MOSFET Package: SOT-523 Plastic-Encapsulate Model:

Product Overview The CES2307 is a P-Channel Enhancement Mode Field Effect Transistor designed for high-performance applications. It features a high-density cell design for extremely low RDS(ON) and a rugged, reliable construction. This transistor is available in a SOT-23 package and is a lead-free product. Key electrical characteristics include a drain-source voltage of -30V, a continuous drain current of -3.2A, and low on-resistance values of 78m at VGS = -10V and 120m at

Product Overview This N-Channel Enhancement Mode MOSFET is designed for efficient power switching applications. It features low on-resistance, low gate threshold voltage, and low input capacitance, contributing to fast switching speeds. The device also offers low input/output leakage and is ESD protected up to 2kV. It is Lead-Free and RoHS Compliant. Typical applications benefit from its robust performance characteristics and reliable operation. Product Attributes Brand:

Product Overview The CES2308 is an N-Channel Enhancement Mode Field Effect Transistor designed for high-performance applications. It features a high-density cell design for extremely low RDS(ON), making it rugged and reliable. This RoHS compliant transistor is ESD protected up to 2KV and is available in a SOT-23 package. Its key specifications include a 20V drain-source voltage, 5.4A continuous drain current, and low on-resistance values of 27m at VGS = 4.5V and 36m at VGS =

Product Overview The SI2309CDS-T1-GE3-CN is a SOT-23 packaged N-channel MOSFET designed for various applications. It offers a continuous drain current of -2A and a pulsed drain current of -8A, with a maximum drain-source voltage of -60V. This device is suitable for use in residential and commercial equipment, providing reliable performance with its specified electrical characteristics and thermal management capabilities. Product Attributes Brand: ChipNobo Product Marking: S09