Single FETs, MOSFETs
Compact voltage controlled switch ChipNobo 2N7002-7-F-CN with high density cell and SOT 23 packaging
Product Overview This is a voltage-controlled small signal switch designed with a high-density cell for low RDS(ON). It offers rugged reliability and high saturation current capability, making it suitable for load switch applications in portable devices and DC/DC converters. The device is packaged ...
CET Chino Excel Tech CEP9060N N Channel Enhancement Mode Transistor with TO 263 Package and 55V VDS
Product Overview This N-Channel Enhancement Mode Field Effect Transistor features a super high-density cell design for extremely low RDS(ON) and high power and current handling capability. Available in TO-220, TO-263, and TO-220F packages, this transistor is designed for efficient power management ...
ChipNobo AO3401A CN MOSFET with Pb Free Halogen Free Certification and Continuous Drain Current 4.2A
Product Overview The AO3401A-CN is a high-performance MOSFET designed for load switching, switching circuits, high-speed line drivers, and power management functions. It features low RDS(on) at VGS=-10V, -3.3V logic level control, and is RoHS compliant, Pb-Free, and Halogen Free. This device offers ...
Low on resistance P Channel MOSFET Central CMLDM8120G TR PBFREE ideal for portable battery powered equipment
Product OverviewThe CMLDM8120 and CMLDM8120G* are surface mount silicon P-Channel enhancement-mode MOSFETs, manufactured using the P-Channel DMOS Process. They are designed for high-speed pulsed amplifier and driver applications, offering low on-resistance (rDS(on)) and low threshold voltage. These ...
Surface Mount P Channel Enhancement Mode Transistor CHENMKO ENTERPRISE CHM9407AJPT for Motor Control
Product Overview The CHM9407AJPT is a P-Channel Enhancement Mode Field Effect Transistor from CHENMKO ENTERPRISE CO.,LTD. Designed with a super high-density cell structure for extremely low RDS(ON), this surface mount transistor offers high power and current handling capability. It is suitable for ...
N channel MOSFET ChipNobo SI2302CDS T1 GE3 CN SOT23 package for general purpose electronic equipment
Product Overview The SI2302CDS-T1-GE3-CN is a SOT-23 package component designed for use in residential and commercial equipment. It is a N-channel MOSFET with specific electrical characteristics and absolute maximum ratings suitable for various electronic applications. This product is intended for ...
N Channel Enhancement Mode Transistor CET Chino Excel Tech CEU12N10 with Low RDS ON and Lead Free Package
Product Overview The CED12N10/CEU12N10 is an N-Channel Enhancement Mode Field Effect Transistor designed for high performance and efficiency. It features a super high dense cell design for extremely low RDS(ON), enabling superior power and current handling capabilities. Available in TO-251 (I-PAK) ...
Silicon MOSFET Central CXDM3069N TR PBFREE for high speed pulsed amplifier and power supply circuits
Product OverviewThe CENTRAL SEMICONDUCTOR CXDM3069N is a high current N-channel enhancement-mode silicon MOSFET designed for high-speed pulsed amplifier and driver applications. It offers high current capability, low on-resistance (rDS(ON)), a low threshold voltage, and low leakage current, making ...
P Channel Enhancement Mode Field Effect Transistor CBI BC3401 with Gate Voltage as Low as 2.5 Volts
Product Overview The BC3401 is a P-Channel Enhancement Mode Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 2.5V. This device is well-suited for applications such as load switches or PWM ...
CBI BC2301 2A PChannel MOSFET TrenchFET Technology in SOT23 Package for Portable and DC DC Converter
Product Overview The SOT-23 Plastic-Encapsulate P-Channel MOSFET, model BC2301, is a TrenchFET Power MOSFET designed for efficient load switching in portable devices and DC/DC converters. It offers a 20V drain-source voltage rating and features a compact SOT-23 package. Product Attributes Package ...
Load Switching P Channel MOSFET CBI BC2301W with 2.1 Amp Continuous Drain Current and 20 Volt Rating
Product Overview This P-Channel TrenchFET Power MOSFET, designed for SOT-323 packaging, offers a robust solution for load switching in portable devices and DC/DC converters. Its key features include a -20V drain-source voltage rating and a continuous drain current of -2.1A, making it suitable for ...
TrenchFET Power MOSFET Dual P Channel Load Switch CBI CB2301DW with Low On Resistance Characteristics
Product Overview The CB2301DW is a dual P-Channel MOSFET designed for load switching in portable devices and DC/DC converters. It features TrenchFET Power MOSFET technology and is housed in a SOT-363 package. This device offers efficient operation with low on-resistance characteristics. Product ...
Power Switching MOSFET ChipNobo DMN3404L-7-CN SOT-23 Package with Low On Resistance and High Current
Product Overview This SOT-23 packaged MOSFET features a high-density cell design for extremely low RDS(on) and exceptional on-resistance and maximum DC current capability. It is suitable for load/power switching and interfacing applications. The device is constructed with Epoxy UL 94V-0 rated ...
Plastic encapsulated N channel MOSFET CBI 2SK3018W with low voltage drive and fast switching speed
Product Overview This N-channel MOSFET is designed for low on-resistance and fast switching speeds, making it ideal for portable equipment due to its low voltage drive capability. It offers easily designed drive circuits and is suitable for parallel applications. The device is a plastic-encapsulated ...
N channel MOSFET CBI 2SK3019W with low on resistance and fast switching in compact SOT 323 package
Product Overview This N-channel MOSFET is designed for low on-resistance and fast switching speeds. Its low voltage drive capability makes it ideal for portable equipment and allows for easily designed drive circuits. The device is also easily paralleled for increased current handling. It is housed ...
Voltage Controlled N Channel MOSFET CBI 2N7002KT High Density Cell Design for Small Signal Switching
Product Overview The 2N7002KT is an N-Channel MOSFET designed for voltage-controlled small signal switching applications. It features a high-density cell design for low RDS(on), ensuring efficient operation. This rugged and reliable MOSFET offers high saturation current capability and is ESD ...
CET Chino Excel Tech CES2307A SOT 23 P Channel Enhancement Mode Transistor with Rugged Construction
Product Overview The CES2307 is a P-Channel Enhancement Mode Field Effect Transistor designed for high-performance applications. It features a high-density cell design for extremely low RDS(ON) and a rugged, reliable construction. This transistor is available in a SOT-23 package and is a lead-free ...
power switching device CBI BC1012 N Channel Enhancement Mode MOSFET with low input capacitance and leakage
Product Overview This N-Channel Enhancement Mode MOSFET is designed for efficient power switching applications. It features low on-resistance, low gate threshold voltage, and low input capacitance, contributing to fast switching speeds. The device also offers low input/output leakage and is ESD ...
N Channel MOSFET CET Chino Excel Tech CES2308 with 20V Drain Source Voltage and ESD Protection 2KV
Product Overview The CES2308 is an N-Channel Enhancement Mode Field Effect Transistor designed for high-performance applications. It features a high-density cell design for extremely low RDS(ON), making it rugged and reliable. This RoHS compliant transistor is ESD protected up to 2KV and is ...
ChipNobo SI2309CDS T1 GE3 CN N channel MOSFET with continuous drain current of 2A in SOT 23 package
Product Overview The SI2309CDS-T1-GE3-CN is a SOT-23 packaged N-channel MOSFET designed for various applications. It offers a continuous drain current of -2A and a pulsed drain current of -8A, with a maximum drain-source voltage of -60V. This device is suitable for use in residential and commercial ...
