Single FETs, MOSFETs

quality N channel MOSFET ChipNobo SUD50P06-15-GE3-CN with TO 252 2L Package and 9mOhm Typical On Resistance factory

N channel MOSFET ChipNobo SUD50P06-15-GE3-CN with TO 252 2L Package and 9mOhm Typical On Resistance

Product Overview This N-channel MOSFET is designed for high-performance applications, offering a maximum drain-source voltage of -60V and a continuous drain current of up to -80A at 25. It features a low static drain-source on-resistance of less than 11m at VGS=-10V, with a typical value of 9m. Key applications include lithium battery protection, wireless charging, and mobile phone fast charging. The device is housed in a TO-252-2L package, suitable for surface-mounted

quality Energy semiconductor component ChipNobo BSS84AK215CN with low threshold voltage and AECQ101 qualification factory

Energy semiconductor component ChipNobo BSS84AK215CN with low threshold voltage and AECQ101 qualification

Product Overview This product is a highly energy-efficient semiconductor component designed for high-speed switching applications. It features a low threshold voltage and is qualified under AEC-Q101 standards, making it suitable for demanding automotive environments. Its capabilities include DC/DC conversion, and it is packaged in a compact SOT-23 small outline plastic package with a UL 94V-0 flammability rating. Mounting position is flexible, allowing for any orientation.

quality High density cell design ChipNobo AO3404A MOSFET with low RDSon and maximum DC current capability factory

High density cell design ChipNobo AO3404A MOSFET with low RDSon and maximum DC current capability

Product Overview This high-density cell design MOSFET offers extremely low RDS(on) and exceptional on-resistance and maximum DC current capability, making it ideal for load/power switching and interfacing applications. Designed for reliability, it features a SOT-23 package with UL 94V-0 flammability rating and allows for any mounting position. Product Attributes Package: SOT-23 Small Outline Plastic Package Epoxy UL Flammability Rating: 94V-0 Mounting Position: Any Brand:

quality Power MOSFET ChipNobo IRFB4115PBF CN with Proprietary Trench Technology and Fast Recovery Body Diode factory

Power MOSFET ChipNobo IRFB4115PBF CN with Proprietary Trench Technology and Fast Recovery Body Diode

Product Overview This N-Channel Power MOSFET features proprietary New Trench Technology, offering a low RDS(ON) of 8.5m at VGS=10V, minimized switching loss due to low gate charge, and a fast recovery body diode. It is designed for applications such as DC/DC converters, motor control, and synchronous rectification. Product Attributes Brand: ChipNobo Product Line: N-Channel Power MOSFET Technology: Proprietary New Trench Technology Technical Specifications Part Number Package

quality Low RDS on N Channel MOSFET ChipNobo AO3407 CN for Switching Circuits and Power Management Solutions factory

Low RDS on N Channel MOSFET ChipNobo AO3407 CN for Switching Circuits and Power Management Solutions

Product Overview This N-Channel MOSFET, specifically the AO3407-CN, is designed for load switching, general switching circuits, and high-speed line drivers. It features low RDS(on) at VGS=-10V, -5V logic level control, and is RoHS compliant, Pb-Free, and Halogen Free. Its power management capabilities make it suitable for a variety of electronic applications. Product Attributes Brand: ChipNobo (implied by notice) Device Type: AO3407-CN Device Marking: A79T Package: SOT-23

quality Power Management N Channel MOSFET ChipNobo STB15810 CN with Low On Resistance and RoHS Compliance factory

Power Management N Channel MOSFET ChipNobo STB15810 CN with Low On Resistance and RoHS Compliance

Product Overview The STB15810-CN is a high-performance N-channel MOSFET designed for various power management applications. It utilizes advanced SGT (Shielded Gate Trench) technology, resulting in extremely low on-resistance (RDS(on)) and excellent gate charge product (FOM). This device is RoHS compliant and halogen-free, making it suitable for battery management, motor control and drives, DC/DC converters, and general-purpose applications. Product Attributes Brand: ChipNobo

quality Power transistor ChipNobo TP65H070G4LSGB-TR-CN Gallium Nitride FET for reduced cooling requirements factory

Power transistor ChipNobo TP65H070G4LSGB-TR-CN Gallium Nitride FET for reduced cooling requirements

Product Overview The TP65H070G4LSGB-TR-CN series FETs are hybrid normally-off Gallium Nitride (GaN) field effect transistors designed for high-efficiency and high-frequency power applications. They offer the strongest gate and the lowest reverse voltage drop among wide-band-gap devices, enabling simple gate drive, best-in-class performance, and outstanding reliability. Key benefits include very high conversion efficiencies, compact power supply designs due to higher frequency

quality Halogen Free and Pb Free Lead Plating Power MOSFET CYSTECH MTC3587DL8 for Power Management Solutions factory

Halogen Free and Pb Free Lead Plating Power MOSFET CYSTECH MTC3587DL8 for Power Management Solutions

Product OverviewThe CYStek MTC3587DL8 is an N- and P-Channel Enhancement Mode Power MOSFET designed for simple drive requirements, low gate charge, low on-resistance, and fast switching speeds. It features Pb-free lead plating and a halogen-free package, making it an environmentally friendly choice. This device is suitable for various power management applications.Product AttributesBrand: CYStekCertifications: Pb-free lead plating, Halogen-free package, RoHS compliantEnvironm

quality High voltage MOSFET Chongqing Pingwei Tech 5N70GS N Channel Super Junction 700 Volt 5 Amp transistor factory

High voltage MOSFET Chongqing Pingwei Tech 5N70GS N Channel Super Junction 700 Volt 5 Amp transistor

Product Overview The 5N70GS is a high-performance N-Channel Super Junction Power MOSFET designed for demanding applications. It offers a robust combination of 5 Amps and 700 Volts with a maximum RDS(ON) of 1.2 at VGS=10V/2.5A. Key features include low gate charge, low Ciss, fast switching speeds, and 100% avalanche tested for enhanced reliability. Its improved dv/dt capability makes it suitable for various power electronics applications where efficiency and robustness are

quality power transistor ChipNobo IRF1404PBF-CN featuring low RDS ON and fast recovery diode for converters factory

power transistor ChipNobo IRF1404PBF-CN featuring low RDS ON and fast recovery diode for converters

Product Overview This product features proprietary new planar technology, offering a typical RDS(ON) of 3.5m at VGS=10V. Its low gate charge minimizes switching loss, and it includes a fast recovery body diode. Ideal for DC-DC converters, DC-AC inverters, and power supplies. Product Attributes Brand: ChipNobo Package: TO-220 Technical Specifications Parameter Symbol Unit Test Conditions Min. Typ. Max. General Features RDS(ON) m VGS=10V 3.5 4.0 Absolute Maximum Ratings Drain

quality voltage controlled small signal switch ChipNobo 2N7002K-7-CN with ESD protection and low RDS ON in SOT 23 package factory

voltage controlled small signal switch ChipNobo 2N7002K-7-CN with ESD protection and low RDS ON in SOT 23 package

Product Overview This is a voltage-controlled small signal switch designed with a high-density cell for low RDS(ON). It is rugged, reliable, and offers high saturation current capability with ESD protection. Ideal for use as a load switch in portable devices and in DC/DC converters. Product Attributes Package: SOT-23 Epoxy UL Flammability Rating: 94V-0 Mounting Position: Any Technical Specifications Parameter Symbol Test Condition Min Typ Max Unit Maximum Ratings & Thermal

quality ChipNobo BSS84LT1G CN transistor featuring low threshold voltage and ul 94v 0 epoxy in sot23 package factory

ChipNobo BSS84LT1G CN transistor featuring low threshold voltage and ul 94v 0 epoxy in sot23 package

Product Overview This product is a highly energy-efficient component featuring low threshold voltage and high-speed switching capabilities, making it suitable for DC/DC converter applications. It is housed in a compact SOT-23 package, designed for flexible mounting positions and constructed with UL 94V-0 rated epoxy for enhanced safety. The product is intended for use in residential and commercial equipment. Product Attributes Package: SOT-23 Small Outline Plastic Package

quality Power Management MOSFET ChipNobo IRFB4410ZPBF-CN N Channel Low RDS ON for Fast Recovery Applications factory

Power Management MOSFET ChipNobo IRFB4410ZPBF-CN N Channel Low RDS ON for Fast Recovery Applications

Product Overview The IRFB4410ZPBF-CN is a high-performance N-channel MOSFET featuring proprietary New Trench Technology. It offers a low typical on-resistance (RDS(ON)) of 7.4 m at VGS=10V and an excellent Figure of Merit (FOM). The device is designed for fast recovery body diode applications, making it suitable for synchronous rectification, power management, DC/DC converters, and motor drives. Product Attributes Brand: ChipNobo (implied by context and notice) Package: TO

quality ChipNobo BSS138P215CN TrenchFET Power MOSFET SOT23 Package Ideal for DC DC Converter Applications factory

ChipNobo BSS138P215CN TrenchFET Power MOSFET SOT23 Package Ideal for DC DC Converter Applications

Product Overview This TrenchFET Power MOSFET is designed for load switching in portable devices and DC/DC converters. It features a SOT-23 package and offers a low on-resistance. Product Attributes Brand: ChipNobo Package Type: SOT-23 Small Outline Plastic Package Epoxy UL Flammability Rating: 94V-0 Mounting Position: Any Technical Specifications Parameter Symbol Test Condition Value Unit Maximum Ratings & Thermal Characteristics (TA = 25 unless otherwise specified) Drain

quality Load switching and switching circuits ChipNobo DMTH4014LPSW 13 CN N channel MOSFET featuring low RDS factory

Load switching and switching circuits ChipNobo DMTH4014LPSW 13 CN N channel MOSFET featuring low RDS

Product Overview This high-performance N-channel MOSFET is designed for efficient load switching, switching circuits, high-speed line driving, and power management applications. It features low RDS(on) at VGS = 10V, logic-level control, and is 100% UIS tested. The device is Pb-Free and RoHS Compliant, ensuring environmental responsibility. Product Attributes Brand: ChipNobo Package Type: PDFN5X6 Certifications: PbFree, RoHS Compliant Technical Specifications Parameter Rating

quality CET Chino Excel Tech CEM6086L Surface Mount N Channel Enhancement Mode Transistor for Power Management factory

CET Chino Excel Tech CEM6086L Surface Mount N Channel Enhancement Mode Transistor for Power Management

Product Overview The CEM6086L is an N-Channel Enhancement Mode Field Effect Transistor designed for high performance applications. It features a super high dense cell design for extremely low RDS(ON) and high power and current handling capability. This surface mount package is suitable for various industrial and electronic applications requiring efficient power switching. Product Attributes Brand: CET Semi Product Type: N-Channel Enhancement Mode Field Effect Transistor

quality ChipNobo STP4N150 CN N channel MOSFET featuring fast recovery diode and lead free halogen free design factory

ChipNobo STP4N150 CN N channel MOSFET featuring fast recovery diode and lead free halogen free design

Product Overview The ChipNobo STP4N150-CN is a high-performance N-channel MOSFET designed for various power applications. It features a low on-state resistance of 5.4 at VGS=10V, a fast recovery body diode for improved efficiency, and is RoHS compliant, lead-free, and halogen-free. This device is well-suited for use in adaptors, chargers, and SMPS standby power supplies, offering reliable performance and robust characteristics. Product Attributes Brand: ChipNobo Certification

quality Small outline SOT 723 package CYSTECH MTN003N02Y3 20V N Channel Enhancement Mode MOSFET for drive requirements factory

Small outline SOT 723 package CYSTECH MTN003N02Y3 20V N Channel Enhancement Mode MOSFET for drive requirements

Product OverviewThe MTN003N02Y3 is a 20V N-Channel Enhancement Mode MOSFET from CYStek, designed for simple drive requirements and featuring a small package outline. It offers ESD protected gate and is Pb-free lead plating and halogen-free. This MOSFET is suitable for various electronic applications requiring efficient power switching.Product AttributesBrand: CYStekOrigin: Taiwan (implied by CYStech Electronics Corp.)Material: Mold Compound: Epoxy resin family, flammability

quality Power P channel MOSFET ChipNobo SI2301CDS T1 GE3 CN with 20V Breakdown Voltage and 8A Pulsed Current factory

Power P channel MOSFET ChipNobo SI2301CDS T1 GE3 CN with 20V Breakdown Voltage and 8A Pulsed Current

Product Overview The SI2301CDS-T1-GE3-CN is a P-channel MOSFET designed for use in residential and commercial equipment. It offers specific electrical characteristics, including a drain-source breakdown voltage of -20V and a continuous drain current of -2.8A. This device is suitable for applications where precise control and efficient power management are required. Product Attributes Brand: ChipNobo Product Marking: A1SHB Package Type: SOT-23 Technical Specifications

quality ESD Protected MOSFET ChipNobo PMZ550UNEYL-CN with 0.85A Continuous Drain Current and Compact Package factory

ESD Protected MOSFET ChipNobo PMZ550UNEYL-CN with 0.85A Continuous Drain Current and Compact Package

Product Overview The PMZ550UNEYL-CN is a high-performance N-channel MOSFET designed for various electronic applications. It features a VDS of 30V and a continuous drain current (ID) of 0.85A at 25C, with low on-resistance (RDS(ON)) of typically 350m at VGS = 4.5V. This ESD-protected device comes in a compact DFN1006-3L package, making it suitable for space-constrained designs. It is engineered for use with residential and commercial equipment. Product Attributes Brand: