Single FETs, MOSFETs

Product Overview This N-Channel Enhancement Mode Field Effect Transistor offers low on-resistance (RDS(ON)) and a low gate threshold voltage. It features low input capacitance and is ESD protected up to 2KV. Designed for various electronic applications, it is housed in a SOT-23 Plastic Package. Product Attributes Package Type: SOT-23 Plastic Package Transistor Type: N-Channel Enhancement Mode Field Effect Transistor ESD Protection: Up to 2KV Technical Specifications Parameter

Product Overview The CED4060A/CEU4060A is an N-Channel Enhancement Mode Field Effect Transistor designed for high-performance applications. It features a super high dense cell design for extremely low RDS(ON) of 85m at VGS = 10V, along with high power and current handling capabilities. This transistor is available in TO-251 (I-PAK) and TO-252 (D-PAK) packages. Product Attributes Brand: CET (implied by domain cetsemi.com) Product Line: CED4060A/CEU4060A Package Types: TO-251

Product Overview This N-channel MOSFET is designed for low on-resistance and fast switching speeds, making it ideal for portable equipment due to its low voltage drive capability. The device features easily designed drive circuits and is suitable for paralleling. It is a plastic-encapsulated MOSFET. Product Attributes Marking: KN Type: N-channel MOSFET Encapsulation: Plastic-Encapsulate Origin: Heyuan China Base Electronics Technology Co., Ltd. Technical Specifications

Product OverviewThe XLamp CMU LED family offers industry-leading performance in standard package and LES sizes. It delivers up to 10% higher LPW than the previous CMT family while maintaining mechanical and optical compatibility. XLamp CMU LEDs are optimized for premium indoor lighting applications like track, spot, and downlights, as well as outdoor lighting.Product AttributesBrand: Cree LEDRegistered Trademarks: Cree, XLamp, EasyWhite, Cree LED logoCertifications: RoHS and

Product Overview This N-Channel Enhancement Mode Field Effect Transistor is designed for voltage-controlled small signal switching applications. It features a high-density cell design for low RDS(ON), high saturation current capability, and high-speed switching performance. Suitable for various electronic circuits requiring efficient switching. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package: SOT-23 Plastic Package Technical Specifications

Product Overview This N-channel MOSFET features a high-density cell design for low RDS(on), making it suitable as a voltage-controlled small signal switch. It offers rugged reliability and high saturation current capability, with ESD protection. Ideal applications include load switches for portable devices and DC/DC converters. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-363 Construction: Plastic-Encapsulate MOSFET Channel

Product Overview This N-channel MOSFET is designed for low on-resistance and fast switching speeds. Its low voltage drive capability makes it ideal for portable equipment and allows for easily designed drive circuits. The device is also easily paralleled for increased current handling. It is packaged in a SOT-23 plastic package. Product Attributes Marking: KN Package: SOT-23 Plastic Package Origin: Heyuan China Base Electronics Technology Co., Ltd. Technical Specifications

Product OverviewThese CENTRAL SEMICONDUCTOR devices are dual N-Channel enhancement-mode MOSFETs, manufactured by the N-Channel DMOS Process. They are designed for high speed pulsed amplifier and driver applications, offering low rDS (ON) and low VDS(ON). The CMLDM7002A features the USA pinout configuration, while the CMLDM7002AJ utilizes the Japanese pinout configuration.Product AttributesBrand: CENTRAL SEMICONDUCTORMaterial: SiliconCertifications: Halogen Free by designTechn

Product Overview This P-Channel MOSFET, designed for P-Channel 20-V(D-S) applications, offers excellent RDS(ON) with low gate charge and low gate voltages. It is ideal for load switch and PWM applications. Key features include low gate voltages, excellent RDS(ON), and low gate charge, making it suitable for efficient power management in various electronic designs. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Product Type: Plastic-Encapsulate

Product Overview The CEA3252 is an N-Channel Enhancement Mode Field Effect Transistor designed for high-performance applications. It features a high-density cell design for extremely low RDS(ON) at both 10V and 4.5V gate-source voltages, ensuring efficient power handling. This transistor is rugged and reliable, housed in a SOT-89 package. It is suitable for applications requiring precise control and minimal power loss. Product Attributes Brand: CETSEMI (implied by URL)

Product Overview The MMBT7002K is an N-Channel Enhancement Mode Field Effect Transistor designed for various applications. It features low on-resistance (RDS(ON)), low gate threshold voltage, and low input capacitance, enhancing its performance. The device is ESD protected up to 2KV and comes in a SOT-23 Plastic Package. Key characteristics include a Drain-Source Breakdown Voltage of 60V and a continuous Drain Current of 300 mA. Product Attributes Type: N-Channel Enhancement

Product Overview The CEM3083 is a P-Channel Enhancement Mode Field Effect Transistor designed for high performance and current handling. It features a super high dense cell design for extremely low RDS(ON), making it suitable for applications requiring efficient power and current management. This surface mount package transistor offers robust performance with a -30V drain-source voltage and up to -13A continuous drain current. Product Attributes Brand: CET Product Type: P

Product Overview The BC3401 is a P-Channel Enhancement Mode Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 2.5V. This device is well-suited for applications such as load switches or PWM applications. The BC3401 is a Pb-free product meeting ROHS & Sony 259 specifications, while the BC3401L is a Green Product ordering option. Both BC3401 and BC3401L are electrically

Product Overview This N-Channel Plastic-Encapsulated MOSFET offers a high-density cell design for extremely low RDS(on) and a rugged, reliable performance. It is designed for direct logic-level interface with TTL/CMOS drivers and is suitable for applications including relays, solenoids, lamps, hammers, displays, memories, transistors, battery-operated systems, and solid-state relays. Key features include a 50V Drain-Source Voltage and low on-resistance values. Product

Product OverviewThe CENTRAL SEMICONDUCTOR CTLDM3590 is an enhancement-mode N-channel silicon MOSFET designed for applications such as high-speed pulsed amplifiers and drivers. It features beneficial low on-resistance (rDS(ON)), low threshold voltage, and very low gate charge characteristics. This device is housed in an ultra-small, ultra-low profile 0.6mm x 0.8mm x 0.4mm TLMTM leadless surface mount package and offers ESD protection up to 2kV.Product AttributesBrand: CENTRAL

Product Overview This N-Channel MOSFET, housed in a SOT-323 surface mount package, is designed for high-density cell applications, offering extremely low RDS(ON). It functions as a voltage-controlled small signal switch, providing a rugged and reliable solution for various applications including small servo motor controls, power MOSFET gate drivers, and general switching applications. Its key features include a high breakdown voltage and efficient on-resistance characteristic

Product Overview The BC3407 is a P-Channel Enhancement Mode Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(on) with low gate charge, making it suitable for use as a load switch or in PWM applications. This SOT-23 encapsulated MOSFET is designed for efficient power management. Product Attributes Type: P-Channel Enhancement Mode Field Effect Transistor Package: SOT-23 Plastic-Encapsulate Marking: 3407 Origin: Heyuan China Base Electronics

Product Overview This N-Channel Plastic-Encapsulated MOSFET is designed for load switching in portable devices and DC/DC converters. It features the TrenchFET Power MOSFET technology, offering efficient performance for demanding applications. The device operates with a 20V Drain-Source Voltage and is packaged in a SOT-23 footprint. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-23 Material: Plastic Encapsulated Technical

Product Overview This N-channel MOSFET offers low on-resistance and fast switching speeds, making it ideal for portable equipment due to its low voltage drive capability. The design facilitates easy drive circuit implementation and parallel connection. Marking is KN. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Marking: KN Package Type: SOT-23 Technical Specifications Parameter Symbol Test Condition Min Typ Max Units MAXIMUM RATINGS (Ta = 25C

Product Overview This N-Channel, Plastic-Encapsulate MOSFET offers a 50-V Drain-Source Voltage and features a high-density cell design for extremely low RDS(on). It is rugged and reliable, designed for direct logic-level interface with TTL/CMOS drivers. Applications include driving relays, solenoids, lamps, hammers, displays, memories, transistors, battery-operated systems, and solid-state relays. Key electrical characteristics include a V(BR)DSS of 50V, RDS(on)MAX of 3.5 at