Single FETs, MOSFETs
Power MOSFET PJSEMI PJM09N40PA N Channel type with RoHS Reach compliance and avalanche energy support
Product OverviewThe PJM09N40PA is an N-Channel Enhancement Mode Power MOSFET designed for efficient power management applications. Featuring advanced trench technology, it offers low on-resistance and robust performance with 100% avalanche testing. This RoHS and Reach compliant component is suitable ...
Low RDS on Power MOSFET PJSEMI PJM10H03NSC with 3A Continuous Current and Excellent Heat Dissipation
Product OverviewThe PJM10H03NSC is an N-Channel Enhancement Mode Power MOSFET designed for power switching applications and uninterruptible power supplies. It features a high-density cell design for ultra-low RDS(on) and an excellent package for good heat dissipation. Key specifications include a ...
PANJIT PJT7828 R1 00001 30V N Channel MOSFET with ESD Protection and Compliance to EU RoHS Directive
Product OverviewThe PJT7828 is a 30V N-Channel Enhancement Mode MOSFET featuring advanced trench process technology and ESD protection. It is specially designed for applications such as relay drivers and speed line drives. This product complies with EU RoHS 2011/65/EU directive and uses a green ...
N Channel Power MOSFET ORIENTAL SEMI OSG60R580FTF Featuring Low Gate Charge and Robust Avalanche Capability
Product Overview The OSG60R580FTF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS Generic series. This high-voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge, engineered to minimize conduction and ...
Enhancement Mode N Channel Power MOSFET ORIENTAL SEMI SFS06R03DF with Low RDS ON and Fast Switching
Product Overview The SFS06R03DF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, engineered with advanced device design for superior performance. It offers low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This series is specifically ...
Parker SI2301 P Channel Enhancement Mode Power MOSFET with Ultra Low On Resistance in SOT 23 Package
Product OverviewThe SI2301 is a P-Channel Enhancement Mode Power MOSFET designed for high-density cell applications, offering ultra-low on-resistance. It features an advanced trench process technology and is housed in a standard SOT-23 small outline plastic package. This MOSFET is Halogen-free and ...
Integrated Analog Front End PANASONIC CPH3338-TL-H for Medical Biopotential Measurement Applications
Product OverviewThe ADS1194/6/8 family offers a highly integrated, low-power, 8-channel, 16-bit analog front-end for biopotential measurements. These devices enable the creation of scalable medical instrumentation systems with reduced size, power, and cost. They feature flexible input multiplexers, ...
Power MOSFET PJSEMI PJM100N30TE Featuring Advanced Trench Technology and 100 Percent Avalanche Tested
Product OverviewThe PJM100N30TE is an N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is 100% avalanche tested, RoHS compliant, and halogen and antimony free. This MOSFET is designed for applications such as load switching, battery protection, and uninterruptible ...
Power MOSFET PJSEMI PJM20H02NSC N Channel 200V VDS and 1.5A Continuous Drain Current for Buck Converters
Product OverviewThe PJM20H02NSC is an N-Channel Enhancement Mode Power MOSFET designed for synchronous buck converter applications. It features advanced trench technology, offering robust performance with a VDS of 200V and ID of 1.5A. This RoHS and Reach compliant component is halogen and antimony ...
power switching device Qorvo UJ4C075023K3S 750V 23mW SiC FET for induction heating and EV charging
UnitedSiC UJ4C075023K3S 750V, 23mW SiC FET Product Overview The UnitedSiC UJ4C075023K3S is a 750V, 23mW G4 SiC FET designed for high-performance power applications. Utilizing a unique 'cascode' circuit configuration, it combines a normally-on SiC JFET with a Si MOSFET to achieve a normally-off ...
Low On Resistance MOSFET PANJIT PJC7401 R1 00001 30V P Channel Enhancement Mode with RoHS Compliance
Product OverviewThe PPJC7401 is a 30V P-Channel Enhancement Mode MOSFET designed for switch load and PWM applications. It features advanced trench process technology, offering low on-state resistance at various gate-source voltages. This device is lead-free and manufactured with a green molding ...
UF4SC120030K4S 1200V SiC FET combining normally on JFET and MOSFET for power switching applications
SiC FET UF4SC120030K4S Product Overview The UF4SC120030K4S is a 1200V, 30mW G4 SiC FET designed for high-performance switching applications. It utilizes a unique 'cascode' circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to achieve a normally-off SiC FET device with standard ...
Power Management MOSFET PJSEMI PJM20DN30DL Dual N Channel with RoHS Compliance and Low On Resistance
Product OverviewThe PJM20DN30DL is a Dual N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is 100% Avalanche Tested and RoHS Compliant, making it a reliable choice for various power management applications. This MOSFET offers low on-resistance and is halogen and ...
Dual N Channel MOSFET PJSEMI PJM05DN20DFA Featuring Loss and in Power Management Circuits
Product OverviewThe PJM05DN20DFA is a Dual N-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features low gate charge and low RDS(ON), making it suitable for applications requiring high performance and reduced power loss. With a VDS of 20V and ID of 5.5A, it offers ...
Compact SOT23 Package PAKER BSN20 NChannel Enhancement Mode Power MOSFET with Ultra Low On Resistance
Product OverviewThe BSN20 is an N-Channel Enhancement Mode Power MOSFET designed for high-density cell applications, offering ultra-low on-resistance. It features advanced trench process technology and is housed in a compact SOT-23 small outline plastic package. This RoHS compliant and halogen-free ...
P Channel Enhancement Mode MOSFET PJSEMI PJM10H05PPA with RoHS Reach Compliance and Avalanche Tested
Product OverviewThe PJM10H05PPA is a P-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It is 100% avalanche tested, RoHS and Reach compliant, and halogen and antimony free. This MOSFET is designed for applications such as load switching, uninterruptible power supplies, ...
N Channel Enhancement Mode MOSFET PJSEMI PJM3404NSC Designed for Load Switching and Power Management
Product OverviewThe PJM3404NSC is an N-Channel Enhancement Mode Power MOSFET designed for load switching and PWM applications, offering excellent RDS(on) and low gate charge. It is suitable for power management solutions.Product AttributesBrand: PingjingsemiPackage: SOT-23-3Technical SpecificationsP...
PIELENST 2N7002K L silicon N Channel MOSFET transistor with rugged design and ESD protection features
Product OverviewThe 2N7002K-L is a silicon N-Channel MOS Field-Effect transistor featuring a high-density cell design for low RDS(on). It functions as a voltage-controlled small signal switch with high saturation current capability and ESD protection. Its rugged and reliable design makes it suitable ...
N Channel MOSFET PJSEMI PJM2312NSC Featuring Trench Technology and Low On Resistance for Load Switch
Product OverviewThe PJM2312NSC is an N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It is RoHS and Reach compliant, and free from Halogen and Antimony. Designed for load switch and PWM applications, this MOSFET offers a VDS of 20V and a continuous ID of 5A, with low on...
Silicon N Channel MOSFET PIELENST 2N7002 L Suitable for Load Switching and Small Signal Applications
Product OverviewThe 2N7002-L is a silicon N-Channel MOS type field-effect transistor designed for voltage-controlled small signal switching. It features a high-density cell design for low RDS(on), a rugged and reliable construction, and high saturation current capability. This ESD-protected device ...
