Single FETs, MOSFETs

Product OverviewThis P-Channel 20-V (D-S) MOSFET features TrenchFET technology for enhanced performance. It is ideal for load switching in portable devices and DC/DC converters, offering efficient power management.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-Source VoltageVDS-20VGate-Source VoltageVGS±12VContinuous Drain

Product OverviewThe KIA18N50H is an N-Channel enhancement mode silicon gate power MOSFET designed for high voltage, high speed power switching applications. It is suitable for use in high efficiency switched mode power supplies and active power factor correction, offering features like low gate charge, fast switching capability, specified avalanche energy, and improved dv/dt capability.Product AttributesBrand: KIA SEMICONDUCTORSProduct Name: 18N50HType: N-CHANNEL MOSFETVoltag

Product OverviewThe KBA3134K is an N-Channel Enhancement Mode MOSFET featuring advanced Trench Process Technology. It offers a low threshold voltage, fast switching speed, and is Halogen-Free & Lead-Free. This MOSFET is ESD protected up to 2KV (HBM) and is ideal for load switching in portable devices and as a voltage-controlled small signal switch.Product AttributesBrand: Yongyutai (implied by website)Certifications: Halogen-Free, Lead-FreeTechnical SpecificationsParameterSym

Product OverviewThe KNX2915A is a 130A, 150V N-CHANNEL MOSFET from KIA SEMICONDUCTORS. It features extremely low on-resistance (RDS(ON)= 10m typ.) due to CRM(CQ) advanced Trench technology, offering an excellent QgxRDS(on) product (FOM). This MOSFET is qualified according to JEDEC criteria and is suitable for applications such as motor control and drive, battery management, and Uninterrupible Power Supplies (UPS).Product AttributesBrand: KIAOrigin: KIA SEMICONDUCTORSPackage:

N-Channel Enhancement Mode MOSFETThis N-Channel Enhancement Mode MOSFET features advanced trench process technology, offering a low threshold voltage and fast switching speed. It is designed for load switching in portable devices and as a voltage-controlled small signal switch. The device is Halogen-Free & Lead-Free, with low RDS(on) for efficient switching.Product AttributesBrand: KM3134KPackage: SOT-723Marking: KFCertifications: Halogen-Free & Lead-FreeTechnical Specificati

7A, 30V N-CHANNEL MOSFET KIA4603AThe KIA4603A is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(on) and low gate charge, meeting RoHS and Green Product requirements. This device is suitable for applications demanding efficient power conversion.Product AttributesBrand: KIA SEMICONDUCTORSProduct Name: KIA4603ACertifications: RoHS, Green ProductTechnical SpecificationsParameterSymbolTest ConditionsMinTy

Product Overview The DMG2305UXQ is a 20V P-Channel Enhancement Mode MOSFET designed with advanced trench technology. It offers excellent RDS(ON), low gate charge, and the ability to operate with gate voltages as low as 4.5V. This device is highly suitable for battery protection and other switching applications, including load switching and uninterruptible power supplies. Product Attributes Brand: Leiditech Model: DMG2305UXQ Package Type: SOT-23 Device Marking: A5SHB Reel Size

Product OverviewThe 2N7002K is an N-Channel Enhancement-Mode MOS FET with ESD protection, designed for various electronic applications. It offers efficient switching and signal amplification capabilities within a compact SOT-23 package.Product AttributesBrand: 2N7002K=72KPackage Type: SOT-23Channel Type: N-ChannelMode: Enhancement-ModeFeature: ESD ProtectionTechnical SpecificationsCharacteristicSymbolMinTypMaxUnitNotesDrain-Source Breakdown VoltageBVDSS60--VID=250uA,VGS

Product OverviewThe KNX2404A is a 190A, 40V N-CHANNEL MOSFET from KIA SEMICONDUCTORS. It features low RDS(on) for minimal conductive loss and high avalanche current, making it suitable for power supply and DC-DC converter applications.Product AttributesBrand: KIADevice Type: N-CHANNEL MOSFETPart Number: KNX2404ALead Free/Green Device: AvailableTechnical SpecificationsParameterSymbolConditionsMinTypMaxUnitStatic characteristicsBVDSSVGS=0V,IDS=250A40--VIDSSVDS=64V,VGS=0V--1AVGS

Product OverviewThe IRLML2402 is an N-Channel 20-V (D-S) MOSFET featuring a supper high density cell design and extremely low threshold voltage. It offers excellent ON resistance for higher DC current, making it ideal for load switching in portable devices, DC/DC converters, and power switching applications.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolT

SI4435DY (KI4435DY) P-Channel MOSFETThe SI4435DY (KI4435DY) is a P-Channel MOSFET designed for various applications. It features a drain-source voltage of -30V and low on-state resistance, making it suitable for power management and switching tasks.Product AttributesBrand: KexinSMD Type: SOP-8Origin: www.kexin.com.cnTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitDrainSource Breakdown VoltageBVDSSVGS = 0 V, ID = 250 A-30VVDS = -30V , VGS = 0V-1VGate

Product OverviewThis P-CHANNEL MOSFET features advanced high cell density Trench technology, offering low RDS(ON) for minimal conductive loss and low Gate Charge for fast switching. It boasts low thermal resistance and is 100% Avalanche and DVDS tested. Ideal for MB/VGA Vcore, SMPS 2nd Synchronous Rectifier, POL applications, and BLDC Motor drivers.Product AttributesBrand: KIAOrigin: N/AMaterial: N/AColor: N/ACertifications: N/ATechnical SpecificationsParameterSymbolCondition

Product OverviewThis N-Channel 20-V(D-S) MOSFET features TrenchFET Power technology, offering low on-resistance for efficient operation. It is designed for load switching in portable devices and DC/DC converters, providing reliable performance with a continuous drain current of 6A.Product AttributesBrand: KSI (implied by part number KSI2300DS-T1-GE3)Origin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSy

Product OverviewThe KCX3010A is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, enhances switching performance, and improves avalanche energy. It is an ideal component for motor drivers and high-speed switching applications.Product AttributesBrand: KIA SEMICONDUCTORSPart Number: KCX3010APackage: TO-263Ordering Part Number: KCB3010ATechnical SpecificationsParameterSymbolTest ConditionsMinTypMa

Product Overview The DMG3130LQ is a P-Channel enhancement mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and is capable of operating with gate voltages as low as 2.5V. This device is well-suited for use as a load switch or in Pulse Width Modulation (PWM) applications. Key features include a Drain-Source Voltage (VDS) of -30V and a continuous Drain Current (ID) of -5.0A at 25C case temperature. Product Attributes Brand:

Product OverviewThe KIA SEMICONDUCTORS KNB2803C is a 150A, 30V N-Channel Power MOSFET featuring Advanced Trench technology. It offers a low RDS(ON) of 2.0m (typ.) at VGS=10V, super low gate charge, and excellent CdV/dt effect decline. This device is 100% Vds and UIS tested, with a green device option available. It is suitable for various power management applications requiring high current and low voltage operation.Product AttributesBrand: KIA SEMICONDUCTORSPart Number:

Product OverviewThe KNX6140S is an N-Channel enhancement mode silicon gate power MOSFET designed for high voltage, high speed power switching applications. It offers features such as low gate charge, high ruggedness, fast switching, 100% avalanche tested, and improved dv/dt capability, making it suitable for switching regulators, switching converters, solenoid drivers, motor drivers, and relay drivers.Product AttributesBrand: KIA SEMICONDUCTORSOrigin: Not specifiedMaterial:

Product OverviewThis 80A, 68V N-CHANNEL MOSFET from KIA SEMICONDUCTORS offers very low on-resistance (RDS(ON)=6.5m typ. @VGS=10V), low Crss, fast switching, and 100% avalanche tested with improved dv/dt capability. It is ideal for PWM applications, power management, and load switching.Product AttributesBrand: KIAPart Number: KND3306C (TO-252), KNB3306C (TO-263)Origin: KIA SEMICONDUCTORSTechnical SpecificationsParameterSymbolRatingUnitTest ConditionsDrain-source voltageVDSS68V

Product Overview This N-Channel MOSFET, designed for SOT-23 packages, offers a 22V Drain-Source voltage and features TrenchFET technology for enhanced performance. It is suitable for load switching in portable devices and DC/DC converters, providing efficient power management with low on-resistance. Product Attributes Brand: Not specified Origin: Not specified Material: Plastic-Encapsulate Color: Not specified Certifications: Not specified Technical Specifications Parameter

Product OverviewThe KNX2804A is a 150A, 40V N-Channel MOSFET from KIA SEMICONDUCTORS featuring proprietary new trench technology. It offers a low RDS(ON) of 3.0m (typ.) at VGS=10V, minimizing switching loss due to its low gate charge. The device also includes a fast recovery body diode, making it suitable for high efficiency DC/DC converters, synchronous rectification, and UPS inverters.Product AttributesBrand: KIAOrigin: KIA SEMICONDUCTORSProduct Name: KNX2804ATechnical