Single FETs, MOSFETs

Product OverviewThis 3A, 1500V N-Channel MOSFET from KIA SEMICONDUCTORS offers high-speed switching capabilities. It is designed for applications such as adaptors, chargers, and SMPS standby power, featuring a low RDS(ON) of 5.5 (typ.) at VGS=10V and a fully isolated plastic package. Available in TO-263, TO-220F, TO-247, and TO-3PF packages.Product AttributesBrand: KIAOrigin: KIA SEMICONDUCTORSPart Number Prefix: KNB, KNF, KNM, KNLTechnical SpecificationsParameterSymbolTO-263

Product OverviewThe KIA KNX6180B is an N-channel enhancement mode power MOS field effect transistor utilizing KIA's proprietary F-CellTM high-voltage planar VDMOS technology. This advanced process and cell structure are engineered to minimize on-state resistance, deliver superior switching performance, and ensure robustness against high energy pulses in avalanche and commutation modes. It is widely adopted in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor

Product Overview160A, 40V N-Channel Fast-Switching Power MOSFET. Features advanced SGT technology, low RDS(ON) of 1.5m (typ.) at VGS=10V, super low gate charge, and excellent CdV/dt effect decline. This device is 100% Vds and UIS tested, suitable for applications requiring fast switching and high power handling. Available in DFN5*6 package.Product AttributesBrand: KIA SEMICONDUCTORSPart Number: KCY2704BPackage: DFN5*6Technology: Advanced SGTCertifications: Green Device

Product OverviewThis 80A, 80V N-Channel MOSFET from KIA SEMICONDUCTORS, model 75NF75, is designed for high-efficiency power applications. It features low on-state resistance (RDS(ON)=7m@VGS=10V) to minimize conductive losses and high avalanche current capability for robust performance. Ideal for power supplies and DC-DC converters, this lead-free and green device offers reliable operation.Product AttributesBrand: KIA SEMICONDUCTORSProduct Type: N-CHANNEL MOSFETModel:

Product OverviewThe WM1A650 N is a high-performance power semiconductor designed for demanding applications. It offers high blocking voltage with low on-resistance, high-speed switching capabilities with low capacitance, and is easy to parallel and simple to drive. These features contribute to higher system efficiency, reduced cooling requirements, increased system reliability, and the ability to operate at increased system switching frequencies.Product AttributesBrand:

Product OverviewThe KNX42150A is a high-speed switching N-CHANNEL MOSFET from KIA SEMICONDUCTORS. It features a full isolated TO-3PF plastic package and is designed for switching applications. Key advantages include high-speed switching and a typical RDS(ON) of 6.5 at VGS=10V.Product AttributesBrand: KIAOrigin: KIA SEMICONDUCTORSPackage: TO-3PFTechnical SpecificationsSymbolParameterTest ConditionsMin.Typ.Max.UnitVDSSDrain-to-Source VoltageTJ=25 C----1500VVGSSGate-to-Source

Product OverviewThe SI9926BDY (KI9926BDY) is a Dual N-Channel MOSFET designed for various applications. It features low on-state resistance (RDS(on)) at different gate-source voltages, making it efficient for switching and amplification tasks.Product AttributesBrand: Kexin (implied by www.kexin.com.cn)SMD Type: SOP-8Marking: 9926B KA****Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitDrain-Source Breakdown VoltageVDSSVGS = 0 V, ID = 250 A20VZero Gate

Product OverviewThe KIA Semiconductors KNX2906A is a 130A, 60V N-CHANNEL MOSFET designed for efficient power management. It features low RDS(on) to minimize conductive loss and high avalanche current capability. This device is suitable for applications requiring robust power handling and efficiency, such as Power Supplies, UPS, and Power Tools.Product AttributesBrand: KIA SemiconductorsProduct Name: KNX2906APackage Options: TO-252, TO-263Environmental: Lead free and green

Product OverviewThis is a SOT-89 30V N Channel Enhancement Mode Field Effect Transistor (MOSFET). It is designed for various electronic applications requiring efficient switching and amplification.Product AttributesBrand: Yongyutai (implied by website)Model: 10N03FType: N-Channel MOSFETPackage: SOT-89Technical SpecificationsCharacteristicSymbolMinTypMaxUnitNotesDrain-Source VoltageBVDSS30V(ID =250uA,VGS=0V)Gate Threshold VoltageVGS(th)11.52.4V(ID =250uA,VGS= VDS)Zero Gate

Product OverviewThe AO3415 (KO3415) is a P-Channel MOSFET designed for various electronic applications. It features a low on-resistance and robust performance characteristics, making it suitable for power management and switching tasks.Product AttributesSMD Type: SOT-23-3Brand: Kexin (implied by www.kexin.com.cn)Origin: China (implied by www.kexin.com.cn)Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitAbsolute Maximum RatingsDrain-Source VoltageVDS-20VGate

Product OverviewThe KNX2708A is a 160A, 80V N-CHANNEL MOSFET from KIA SEMICONDUCTORS. Featuring proprietary new trench technology, it offers a low RDS(ON) of 4.0m typ. at VGS=10V, minimized switching loss due to low gate charge, and a fast recovery body diode. It is ideal for high-efficiency DC/DC converters, synchronous rectification, and UPS inverters.Product AttributesBrand: KIAOrigin: KIA SEMICONDUCTORSTechnical SpecificationsPart NumberPackageVDSS (V)ID (A)RDS(ON) (m)VGS

Product OverviewThe AO3422 is a 60V N-Channel Enhancement Mode MOSFET designed for various applications. It offers robust performance with a continuous drain current of 3A and a pulsed drain current of 13A. This device is suitable for power management solutions requiring efficient switching and low on-resistance.Product AttributesProduct Marking: AO3422 = ARChannel Type: N-ChannelMOSFET Type: Enhancement ModeTechnical SpecificationsCharacteristicSymbolMinTypMaxUnitConditionsD

Product OverviewThe KIA SEMICONDUCTORS 50N06B is a 50A, 60V N-CHANNEL MOSFET designed for efficient power management. It features low on-resistance (RDS(on)) to minimize conductive losses and high avalanche current capability. This device is suitable for applications such as power supplies, UPS systems, and battery management systems.Product AttributesBrand: KIA SEMICONDUCTORSProduct Name: 50N06BDevice Type: N-CHANNEL MOSFETLead Free/Green Device: AvailableTechnical

Product OverviewThis P-Channel MOSFET, AO6401-HF (KO6401-HF), is designed for surface-mount applications. It features a drain-source voltage of -30V and continuous drain current capabilities up to -5A. With low on-resistance values at various gate-source voltages, it offers efficient power handling. The SOT-23-6 package is suitable for compact designs.Product AttributesBrand: KexinSMD Type: SOT-23-6PbFree Package: May be Available (GSuffix Denotes PbFree Lead Finish)Technical

Product OverviewThe KIA SEMICONDUCTORS KNX41100A is a 2.0A, 1000V N-CHANNEL MOSFET designed for efficient power management. It features low gate charge for minimized switching loss and a fast recovery body diode. This MOSFET is suitable for applications such as adaptors, chargers, and SMPS standby power.Product AttributesBrand: KIACertifications: RoHS CompliantTechnical SpecificationsPart NumberPackageBrandVDSS (V)VGSS (V)ID (A) @ Tc=25 CRDS(ON),typ. () @ VGS=10VPD (W)TJmax

Product OverviewThe KIA SEMICONDUCTORS 40N20A is a 200V N-CHANNEL MOSFET designed for high-performance applications. It features low on-resistance (RDS(ON)=0.08 Max.), low gate charge, and fast switching capabilities, making it suitable for DC-DC converters, DC-AC converters for UPS, SMPS, and motor controls. This RoHS compliant component offers robust performance with a continuous drain current of 40A and a continuous drain current at 100C of 19.2A.Product AttributesBrand:

Product OverviewThis P-CHANNEL MOSFET, part number KPD7115A from KIA SEMICONDUCTORS, features advanced high cell density Trench technology for minimal conductive loss and fast switching. It offers low RDS(ON), low gate charge, and low thermal resistance, with 100% Avalanche and DVDS tested. Ideal for MB/VGA Vcore, SMPS 2nd Synchronous Rectifier, POL applications, and BLDC Motor drivers.Product AttributesBrand: KIAPart Number: KPD7115APackage: TO-252Technical SpecificationsPar

Product OverviewThe KIA SEMICONDUCTORS 8104A is a 30A, 40V N-CHANNEL MOSFET designed for efficient power management applications. It features very low on-resistance (RDS(ON) as low as 12m typ.), low Crss, and fast switching capabilities. This MOSFET is 100% avalanche tested and offers improved dv/dt capability, making it suitable for PWM applications and load switching.Product AttributesBrand: KIAOrigin: KIA SEMICONDUCTORSTechnical SpecificationsPart NumberPackageBrandDrain

Product Overview The BUK7M12-60E is an N-Channel Enhancement Mode Power MOSFET designed for various applications. It features a continuous drain current of 20 A at 25C and 11 A at 70C, with a pulsed drain current of 60 A. The MOSFET offers a drain-source breakdown voltage of 60 V and a gate threshold voltage typically around 1.5 V. Its low on-state resistance, with values as low as 7.5 m at VGS=10 V and ID=20 A, makes it suitable for efficient power handling. The device is

Product OverviewThe JX3400AS3 is an N-Channel Enhancement Mode MOSFET featuring 30V MOSFET technology, low on-state resistance, and fast switching capabilities. It is designed for power switching and load switching applications.Product AttributesBrand: JX (implied from part number and URL)Origin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitsDrain to Source Breakdown