Single FETs, MOSFETs

Product OverviewThe 4N65F is a 650V N-channel planar MOSFET from KMOS Semiconductor, featuring an advanced planar process for enhanced performance. It offers a low RDS(ON) of 2.4 (typ.) at VGS=10V, RoHS compliance, minimized switching loss due to low gate charge, and a fast recovery body diode. This MOSFET is suitable for applications such as adaptors, chargers, and SMPS standby power.Product AttributesBrand: KMOS SemiconductorPart Number: 4N65FPackage: TO-220FCertifications:

Product Overview The FDMC86160 is an N-Channel MOSFET designed using advanced SGT MOSFET technology. It offers low RDS(on), low gate charge, fast switching, and excellent avalanche characteristics, providing enhanced ruggedness. This device is suitable for applications such as consumer electronic power supplies, motor control, isolated DC-DC converters, and synchronous rectification. Product Attributes Brand: Leiditech Product ID: FDMC86160 Technology: SGT MOSFET Channel Type

Product OverviewThe KPE4403A2 is a high cell density trenched Dual P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(on) and low gate charge, with features like super low gate charge and excellent Cdv/dt effect decline due to its advanced high cell density trench technology. This device meets RoHS and Green product requirements.Product AttributesBrand: KIA SEMICONDUCTORSModel: KPE4403A2Type: Dual P-CHANNEL MOSFETCertifications:

Product OverviewThe KO3400 (AO3400) is an N-Channel Enhancement Mode Field Effect Transistor designed for SMD applications. It offers a 30V drain-source voltage and a continuous drain current of 5.8A at 25C (VGS = 10V). This MOSFET features low on-resistance values at various gate-source voltages, making it suitable for power switching applications.Product AttributesBrand: KexinOrigin: China (implied by www.kexin.com.cn)Type: SMD Type IC, SMD Type MOSFETPackage: SOT

Product OverviewThe KIA SEMICONDUCTORS 7880A is a 27A, 800V N-CHANNEL MOSFET featuring an advanced planar process, low gate charge for minimized switching loss, and a rugged polysilicon gate structure. It is designed for applications such as BLDC motor drivers, electric welders, and high-efficiency SMPS.Product AttributesBrand: KIAPart Number: KNK7880APackage: TO-264Origin: KIA SEMICONDUCTORSTechnical SpecificationsParameterSymbolRatingsUnitTest ConditionsDrain-to-Source

Product Overview The KIA Semiconductors KNX6610A is a high-performance N-channel MOSFET featuring extreme high cell density with excellent RDS(ON) and gate charge. Designed for synchronous buck converter applications, it meets RoHS and green product requirements, with 100% EAS guaranteed and full function reliability approved. Its advanced trench technology offers super low gate charge and excellent Cdv/dt effect suppression. Product Attributes Brand: KIA SEMICONDUCTORS

Product OverviewThe KNX3403C is an N-channel enhancement mode power MOSFET utilizing KIA's LVMosfet technology. Engineered with an improved process and cell structure, it excels at minimizing on-state resistance and delivering superior switching performance. This device is widely adopted in UPS and Power Management for Inverter Systems.Product AttributesBrand: KIA SEMICONDUCTORSPart Number: KNX3403CPackage: TO-252Technical SpecificationsSymbolParameterTest ConditionsMinTypMax

Product OverviewKIA SEMICONDUCTORS 2300 is a MOSFET transistor designed for various electronic applications. It offers a drain-source voltage of 20V with varying on-state resistance (RDS(ON)) and continuous drain current (ID) depending on the gate-source voltage (VGS).Product AttributesBrand: KIA SEMICONDUCTORSTechnical SpecificationsCharacteristicSymbolTest ConditionMinTypMaxUnitDrain-source breakdown voltageVDSSVGS=0V, ID =250A20--VZero gate voltage drain currentIDSSVDS=16V

N-Channel MOSFET This N-Channel MOSFET is designed for various applications requiring efficient switching and power control. Its key features include low on-state resistance and robust absolute maximum ratings, making it suitable for general-purpose power management. Product Attributes Brand: Kexin Origin: China (implied by www.kexin.com.cn) SMD Type: SOT-23 Marking: A2SHB Technical Specifications Parameter Symbol Test Conditions Min Typ Max Unit Absolute Maximum Ratings

Product OverviewThe 12N65 is a 650V N-Channel Planar MOSFET featuring an advanced planar process for enhanced performance. It offers a low on-resistance (RDS(ON)=0.6 typ. @VGS=10V), low gate charge to minimize switching loss, and a fast recovery body diode. This RoHS compliant MOSFET is suitable for applications such as adaptors, chargers, and SMPS standby power.Product AttributesBrand: KMOS SemiconductorPart Number: KNF12N65Package: TO-220FCertifications: RoHS CompliantTechn

Product OverviewThe AO4606A is a 30V N-Channel and P-Channel MOSFET designed for high power and current handling capabilities. It is available in a lead-free, surface mount package, making it suitable for various power management applications including battery protection and load switching.Product AttributesDevice Code: 4606AMarking: XXXXXXPackage: SOP-8Certifications: Lead free product is acquiredTechnical SpecificationsParameterN-Channel ConditionMinTypMaxUnitP-Channel

Product OverviewThe KIA3402 is an N-channel MOSFET utilizing advanced trench technology. It offers excellent RDS(on), low gate charge, and can operate with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The KIA3402 is available as a green product in a lead-free package.Product AttributesBrand: KIA SEMICONDUCTORSProduct Name: KIA3402Type: N-CHANNEL MOSFETColor: Green (Green Product)Certifications: Lead-free packageTechnic

Product OverviewThe SI2333CDS (KI2333CDS) is a P-Channel Enhancement Mode MOSFET designed for various applications. It features a low on-resistance and is available in a compact SOT-23-3 SMD package.Product AttributesBrand: KexinSMD Type: SOT-23-3Origin: www.kexin.com.cnTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitAbsolute Maximum RatingsDrain-Source VoltageVDS-12VGate-Source VoltageVGS±8VContinuous Drain CurrentIDTa = 25, VGS = -4.5V-5.1AContinuous

Product OverviewThis product utilizes Geener advanced MOS technology, offering extremely low on-resistance (RDS(on)) and an excellent QgxRDS(on) product (FOM). It is qualified according to JEDEC criteria and is suitable for applications such as motor control and drive, battery management, and Uninterruptible Power Supplies (UPS).Product AttributesBrand: KMOS SemiconductorTechnology: Geener advanced MOSCertifications: Qualified according to JEDEC criteriaTechnical Specificatio

Product OverviewThe SI2306 is a TrenchFET Power MOSFET designed for load switching in portable devices and DC/DC converters. It features a SOT-23 package and is UL 94V-0 rated for flammability.Product AttributesPackage: SOT-23Flammability Rating: Epoxy UL: 94V-0Mounting Position: AnyTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitMaximum Ratings & Thermal CharacteristicsVDS30VVGS±20VID3.16AIDM20APD750mWElectrical CharacteristicsV(BR)DSSVGS=0V, ID=250uA30VV

Product OverviewThe KIA20N50H is an N-Channel enhancement mode silicon gate power MOSFET designed for high voltage, high speed power switching applications. It is suitable for use in high efficiency switched mode power supplies and active power factor correction.Product AttributesBrand: KIA SEMICONDUCTORSModel: 20N50HType: N-CHANNEL MOSFETVoltage Rating: 500VCurrent Rating: 20ATechnical SpecificationsParameterSymbolTO220FTO247/TO3PUnitsConditionsDrain-source voltageVDSS500500

Product OverviewThe 2KJ7103DFN is a P-Channel MOSFET in an SMD Type package, designed for various electronic applications. It features a drain-source voltage of -30V and a continuous drain current of -6A. With a low on-resistance of 24m at VGS=-10V (Typ.), it offers efficient power handling. The PDFN3.3x3.3-8 package ensures compact integration into circuit designs.Product AttributesBrand: KexinOrigin: China (inferred from www.kexin.com.cn)Package Type: PDFN3.3x3.3-8Technical

Product OverviewThe AON7544 is a 25V/60A N-Channel MOSFET featuring Trench Power LV MOSFET technology. It offers high power and current handling capability with low gate charge, making it suitable for PWM applications, power management, and load switching.Product AttributesDevice Code: ME0C60APackage: PDFN3X3-8LTechnical SpecificationsParameterSymbolConditionMinTypMaxUnitAbsolute Maximum RatingsVDS25VVGS20VTJ150CStorage Temperature RangeTSTG-55150CCommon RatingsISTc

KIA SEMICONDUCTORS KPY3203D -100A, -30V P-CHANNEL MOSFETThe KIA SEMICONDUCTORS KPY3203D is a high-performance P-Channel MOSFET designed for demanding applications. It features a low on-resistance (RDS(ON) of 3.5m typ.), super low gate charge, and 100% EAS guaranteed. This device offers excellent CdV/dt effect decline and is available in a Green Device option. Its advanced high cell density Trench technology ensures superior performance and reliability.Product AttributesBrand:

Product OverviewThe KIA SEMICONDUCTORS 2806A is a 150A, 60V N-CHANNEL MOSFET designed for switching applications, power management in inverter systems, and UPS. It offers a low RDS(on) of 3.5m (typ.) at VGS=10V, is 100% avalanche tested, and features a reliable and rugged construction. Lead-free and green device options are available.Product AttributesBrand: KIAPart Number: KNB2806APackage: TO-263Certifications: RoHS Compliant (Lead free and green device available)Technical