Single FETs, MOSFETs

Product OverviewThis P-Channel MOSFET features a high-density cell design for ultra-low RDS(ON) and is fully characterized for avalanche voltage and current. It offers good stability and uniformity with high EAS, making it suitable for battery and loading switching applications. The package is designed for excellent heat dissipation.Product AttributesDevice Code: ME0D35APPackage: PDFN3X3-8LTechnical SpecificationsParameterConditionMinTypMaxUnitVDS-30V P-Channel MOSFET

Product OverviewThis N-Channel Enhancement Mode MOSFET features advanced trench process technology, offering low threshold voltage and fast switching speeds. It is halogen-free, lead-free, and ESD protected up to 2KV (HBM). Ideal for load switching in portable devices and as a voltage-controlled small signal switch.Product AttributesBrand: YongyutaiCertifications: Halogen-Free & Lead-FreeESD Protection: up to 2KV (HBM)Technical SpecificationsParameterSymbolValueUnitConditions

Product OverviewThe 150A, 60V N-CHANNEL MOSFET (Model 2706A) from KIA SEMICONDUCTORS is designed for high-performance applications requiring low on-resistance and high ruggedness. It features very low RDS(ON) of 2.8m (typ.) at VGS=10V, fast switching capabilities, and is 100% avalanche tested with improved dv/dt capability. Ideal for PWM applications, power management, and load switching, this MOSFET offers reliable performance in demanding environments.Product AttributesBran

Product OverviewThe JX3401 is a P-Channel Enhancement Mode MOSFET featuring Advanced Trench Technology. It is designed for power management and load switching applications, offering efficient performance in a surface mount SOT23 package.Product AttributesBrand: JX (implied by part number and URL)Origin: China (implied by URL http://www.trr-jx.com)Package: SOT23Technical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitsDrain to Source Breakdown VoltageV(BR)DSSID =

Product OverviewThe KNX4660A is a 7A, 600V N-Channel enhancement mode silicon gate power MOSFET designed for high voltage, high speed power switching applications. Its features include low gate charge for minimized switching loss and a fast recovery body diode, making it suitable for applications such as high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half-bridge topology. It is commonly used in adaptors,

Product OverviewThe KIA28N50H is a 500V N-CHANNEL MOSFET designed for various power supply applications. It offers low RDS(ON) of 0.16 (typ.) at VGS=10V, low gate charge, low Crss, and improved dv/dt capability. This RoHS compliant component is 100% avalanche tested and suitable for LED power supplies, cell phone chargers, and standby power applications.Product AttributesBrand: KIACertifications: RoHS CompliantTechnical SpecificationsParameterSymbolTO-220F RatingTO-3P

Product OverviewThe AO3409 (KO3409) is a P-Channel Enhancement MOSFET designed for SMD applications. It features a VDS of -30V and a continuous drain current of -2.6A at VGS = -10V, with low on-resistance.Product AttributesBrand: KexinOrigin: ChinaType: SMD Type MOSFETTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitDrain-Source Breakdown VoltageVDSSID=250µA, VGS=0V-30VGate-Body leakage currentIGSSVDS=0V, VGS=±20V±100nAGate Threshold VoltageVGS(th)VDS=VGS,

Product Overview The P-Channel 30V (D-S) MOSFET features ultra low on-resistance and is available in tape and reel. It is designed for applications such as load switches for portable devices and DC/DC converters. Product Attributes Brand: Not specified Origin: Not specified Material: Not specified Color: Not specified Certifications: Not specified Technical Specifications Parameter Symbol Test Condition Min Typ Max Unit P-Channel 30V (D-S) MOSFET V(BR)DSS VGS = 0V, ID = -250A

Product OverviewThis P-Channel MOSFET features a 20V Drain-Source Voltage (VDS) and low on-state resistance (RDS(on)MAX) of 65m at -4.5V and 85m at -2.5V. It offers a continuous drain current (ID) of -4A. Designed with TrenchFET technology, it is ideal for load switching in portable devices and DC/DC converters.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSym

Product OverviewThe 2N7002T is an N-Channel MOSFET designed for general-purpose switching applications. It features a 60V drain-source voltage and a continuous drain current of 115mA, with low on-resistance values at different gate-source voltages. This SMD-type component is suitable for various electronic circuits requiring efficient switching.Product AttributesBrand: KexinSMD Type: SOT-523Origin: www.kexin.com.cnTechnical SpecificationsParameterSymbolTest ConditionsMinTypMa

Product OverviewThe IRLML2402 is a N-Channel MOSFET designed for various electronic applications. It features a low on-resistance and high current handling capabilities, making it suitable for switching and amplification tasks.Product AttributesBrand: KexinSMD Type: SOT-23Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitDrain-Source Breakdown VoltageVDSSID=250A, VGS=0V20VGate-Body Leakage CurrentIGSSVDS=0V, VGS=12V100nAGate Threshold VoltageVGS(th)VDS=VGS ,

Product Overview This N-Channel Enhancement Mode Power MOSFET, designed for portable devices and DC/DC converters, features TrenchFET technology for efficient load switching. Packaged in a compact SOT-23, it offers a robust solution for various electronic applications. Product Attributes Package: SOT-23 Epoxy UL Flammability Rating: 94V-0 Mounting Position: Any Technical Specifications Parameters Symbol Test Condition Min Typ Max Unit Maximum Ratings & Thermal Characteristics

Product OverviewThe KIA SEMICONDUCTORS 3106N is a 110A, 60V N-CHANNEL MOSFET featuring proprietary new planar technology for fast switching and improved dv/dt capability. It is 100% avalanche tested and offers a low RDS(ON) of 7m (typ.) at VGS=10V. This MOSFET is suitable for applications such as Switch Mode Power Supply (SMPS), Uninterruptible Power Supply (UPS), and Power Factor Correction (PFC).Product AttributesBrand: KIAPart Number: KNP3106NPackage: TO-220Technical

Product OverviewThis is a 4.0A, 1000V N-CHANNEL MOSFET from KIA SEMICONDUCTORS. It features low gate charge for minimized switching loss and a fast recovery body diode. Ideal for applications such as adaptors, chargers, and SMPS standby power.Product AttributesBrand: KIA SEMICONDUCTORSCertifications: RoHS CompliantTechnical SpecificationsPart NumberPackageBrandDrain-to-Source Voltage (VDSS)Gate-to-Source Voltage (VGSS)Continuous Drain Current (ID) @ Tc=25 CPulsed Drain

Product Overview The SI2304DS (KI2304DS) is a high-performance N-Channel Enhancement MOSFET designed for various electronic applications. It features a low Drain-Source On-Resistance (RDS(ON)) at different gate-source voltages, making it efficient for switching and amplification tasks. This MOSFET is housed in a compact SOT-23-3 SMD package, suitable for space-constrained designs. Product Attributes Brand: Kexin SMD Type: SOT-23-3 Technical Specifications Parameter Symbol

Product OverviewThe KIA SEMICONDUCTORS KPS6110B is a P-CHANNEL MOSFET featuring Advanced Trench MOS Technology, offering reliable and rugged performance. This green device is suitable for power management and DC motor control applications.Product AttributesBrand: KIA SEMICONDUCTORSPart Number: KPS6110BPackage: SOT-89Origin: KIAMaterial: MOSFETColor: Green Device AvailableTechnical SpecificationsParameterSymbolConditionsMin.Typ.Max.UnitDrain-Source Breakdown VoltageBVDSSVGS=0V

Product Overview The 50N06 is an N-Channel Mode Power MOSFET designed for power switching applications. It offers low on-resistance characteristics at various gate-source voltages and features a continuous drain current capability of 50A with a drain-source voltage of 60V. This MOSFET is packaged in a TO-252-2L package. Product Attributes Brand: trr-jx.com Product ID: 50N06 Package: TO-252 Channel Mode: N-Channel Technical Specifications Symbol Parameter Test conditions Min

Product OverviewThe KIA3400 is an N-CHANNEL MOSFET featuring advanced trench technology for excellent RDS(on) and low gate charge, capable of operating with gate voltages as low as 2.5V. It is suitable for use as a load switch or in PWM applications. This is a standard, Pb-free product meeting ROHS & Sony 259 specifications, available as a Green Product option.Product AttributesBrand: KIA SEMICONDUCTORSModel: KIA3400Type: N-CHANNEL MOSFETCertifications: ROHS & Sony 259

Product OverviewThis 7.5A, 650V N-Channel Power MOSFET, produced using KIA's advanced planar stripe DMOS technology, offers minimal on-state resistance, superior switching performance, and high energy pulse withstand capability in avalanche and commutation modes. It is well-suited for high efficiency switched mode power supplies and active power factor correction based on half bridge topology.Product AttributesBrand: KIA SEMICONDUCTORSOrigin: KIATechnical SpecificationsPart

130A, 80V N-CHANNEL MOSFET from KIA SEMICONDUCTORS. This MOSFET is designed for power switching applications, including hard switched and high-frequency circuits, as well as uninterruptible power supplies. Key features include a low RDS(ON) of 4.8m(typ.) at VGS=10V to minimize conductive loss, high avalanche current capability, and availability in Lead-free and Green Device options.Brand: KIA SEMICONDUCTORSProduct Name: 2908DDevice Type: N-CHANNEL MOSFETVoltage Rating: