Single FETs, MOSFETs

Product OverviewThe KIA3414 is an N-CHANNEL MOSFET utilizing advanced trench technology. It offers excellent RDS(on) and low gate charge, with operation possible at gate voltages as low as 1.8V. This device is well-suited for applications such as load switches or PWM control. It is a standard product, Pb-free, and meets ROHS & Sony 259 specifications, with a Green Product ordering option available. The KIA3414 is electrically identical across its variants.Product AttributesBr

Product OverviewThe KNX3610A is an N-CHANNEL MOSFET utilizing advanced trench technology to deliver excellent RDS(ON) and low gate charge. It is suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, as well as uninterruptible power supplies.Product AttributesBrand: KIA SEMICONDUCTORSPart Number: KNX3610AOrigin: KIA SEMICONDUCTORS (implied)Technical SpecificationsParameterSymbolRatingUnitsTest ConditionsAbsolute Maximum

Product OverviewThe BSS138 (KSS138) is an N-Channel MOSFET designed for various electronic applications. It features a SOT-23 package and offers key electrical characteristics suitable for switching and amplification tasks.Product AttributesBrand: KEXINModel: BSS138 (KSS138)Package Type: SOT-23Origin: China (indicated by www.kexin.com.cn)Certifications: ESD Rating (ES6D)Technical SpecificationsParameterSymbolRatingUnitTest ConditionsMinTypMaxDrain-Source VoltageVDSV60Gate

Product OverviewThis 650V N-Channel MOSFET from KIA Semiconductors, model 65R950, utilizes advanced super-junction technology. It is designed to minimize conduction loss, offer superior switching performance, and provide high ruggedness for avalanche and commutation modes. This device is well-suited for high-efficiency AC/DC power conversion in switching mode operations.Product AttributesBrand: KIA SEMICONDUCTORSProduct Name: 65R950Channel Type: N-CHANNELVoltage Rating:

Product OverviewThe KNX4665B is a N-channel enhancement mode silicon gate power MOSFET designed for high voltage, high speed power switching applications. It is suitable for use in high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology. Key features include ROHS compliance, low gate charge for minimized switching loss, and a fast recovery body diode.Product AttributesBrand: KIA SEMICONDUCTORSCer

JX3400S3 N-Channel Enhancement Mode MOSFETThe JX3400S3 is an N-Channel Enhancement Mode MOSFET designed for power switching and load switching applications. It features 30V MOSFET technology, low on-state resistance, and fast switching capabilities. The device is available in a SOT23-3 package.Product AttributesBrand: JXOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max

Product OverviewThe KNX2803A is a 150A, 30V N-CHANNEL MOSFET from KIA SEMICONDUCTORS, designed using trench processing techniques for extremely low on-resistance. It features a 175C junction operating temperature, fast switching speed, and improved repetitive avalanche rating, making it an efficient and reliable device for motor applications and a wide variety of other uses.Product AttributesBrand: KIA SEMICONDUCTORSCertifications: Lead-Free, RoHS CompliantTechnical

Product OverviewThe KIA 840S is an 8A, 500V N-CHANNEL MOSFET from KIA SEMICONDUCTORS. It features low on-resistance (RDS(ON)=0.7 typ), low gate charge, and a peak current vs. pulse width curve. This MOSFET is suitable for applications such as adaptors, TV main power, SMPS power supplies, and LCD panel power.Product AttributesBrand: KIA SEMICONDUCTORSModel: 840SChannel Type: N-CHANNELCertifications: RoHS compliantTechnical SpecificationsParameterSymbolTO-220TO-252, TO

Product OverviewThe KIA KNX6180A is a 10A, 800V N-CHANNEL MOSFET featuring proprietary new planar technology. It offers a low Gate Charge to minimize switching loss and a fast recovery body diode. This MOSFET is ideal for applications such as ATX Power supplies and LCD Panel Power.Product AttributesBrand: KIAPart Number: KNX6180AOrigin: KIA SEMICONDUCTORSTechnical SpecificationsSymbolParameterTO-220TO-220FUnitAbsolute Maximum RatingsVDSSDrain-to-Source Voltage800800VVGSSGate

Product OverviewThis N-Channel 20-V (D-S) MOSFET in a SOT-23 package features ultra-low on-resistance and is available in tape and reel. It is designed for applications such as load switches for portable devices and DC/DC converters.Product AttributesBrand: WNM (implied by datasheet name)Origin: Yongyutai (www.yongyutai.com)Material: Plastic-EncapsulatedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitMaximum RatingsDrain-Source

Product OverviewThe KIA SEMICONDUCTORS 4360A is a 4.0A, 600V N-CHANNEL MOSFET designed for high-frequency switching applications. It features low on-resistance (RDS(ON) =1.9 typ. @ VGS=10V, ID=2A), fast switching speeds, 100% avalanche testing, and improved dv/dt capability. This MOSFET is suitable for use in high frequency switching mode power supplies, Uninterruptible Power Supplies (UPS), and electronic ballasts.Product AttributesBrand: KIATechnical SpecificationsPart

60A, 100V N-CHANNEL MOSFET - KNX3610AThe KNX3610A is an N-CHANNEL MOSFET utilizing advanced trench technology to deliver excellent RDS(ON) and low gate charge. This design makes it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Its high-density cell design contributes to lower RDS(ON), while the fully characterized avalanche voltage and current, along with good stability and

Product OverviewThe KCC1808A is a 240A, 80V N-CHANNEL MOSFET from KIA SEMICONDUCTORS. It utilizes advanced SGT technology, offering extremely low RDS(on) with a typical value of 1.7m at VGS=10V and an excellent figure of merit (FOM). This MOSFET is ideal for motor control and drives, battery management, DC/DC converters, and general-purpose applications.Product AttributesBrand: KIAPart Number: KCC1808APackage: TO-263-6Technical SpecificationsParameterSymbolRatingsUnitTest

Product Overview120A, 40V N-Channel Power MOSFET featuring Advanced Trench technology, super low gate charge, and excellent CdV/dt effect decline. This device is 100% Vds and UIS tested, offering a typical RDS(ON) of 3.8m @ VGS=10V. Available in Green Device option.Product AttributesBrand: KIA SEMICONDUCTORSPart Number: KNB3004APackage: TO-263Origin: KMOS SemiconductorCertifications: Green Device AvailableTechnical SpecificationsParameterSymbolConditionsMin.Typ.Max.UnitDrain

Product OverviewThis 9A, 1500V N-Channel MOSFET features a low RDS(ON) of 2.8 (typ.) at VGS=10V, low gate charge for minimized switching loss, and a fast recovery body diode. It is suitable for applications such as adaptors, chargers, and SMPS standby power.Product AttributesBrand: KIAPart Number: KNM48150APackage: TO-247Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitsDrain-source breakdown voltageBVDSSVGS=0V,ID=250uA1500--VDrain-source leakage currentIDSS

Product OverviewThe KIA SEMICONDUCTORS KPD6610B is a high-performance P-CHANNEL MOSFET featuring Advanced Trench MOS Technology. It offers guaranteed 100% EAS (Electricals Available System) and is known for its reliability and ruggedness. This green device is suitable for power management and DC motor control applications.Product AttributesBrand: KIA SEMICONDUCTORSPart Number: KPD6610BPackage: TO-252Origin: KIACertifications: Green Device AvailableTechnical SpecificationsPara

Product OverviewThe KIA SEMICONDUCTORS 5N50S is a 5A, 500V N-Channel MOSFET designed for robust high-voltage applications. It features low on-resistance (RDS(ON)) of 1.35 (typ.) for DFN5*6 and 1.38 (typ.) for TO-252 packages at VGS=10V. The device offers specified avalanche energy, a source-to-drain diode recovery time comparable to discrete fast recovery diodes, and is characterized for use in bridge circuits. IDSS and VDS(on) are specified at elevated temperatures, ensuring

Product OverviewThe KXN5610A is a high-performance N-channel MOSFET from KIA Semiconductors, featuring extreme high cell density for excellent RDS(ON) and gate charge. This trench technology MOSFET is designed for synchronous buck converter applications, offering advantages like low gate charge and excellent Cdv/dt effect. It meets RoHS and green product requirements.Product AttributesBrand: KIA SEMICONDUCTORSPart Number: KXN5610APackage: SOT-89Certifications: RoHS, Green

Product OverviewThe AO3407 is a P-CHANNEL ENHANCEMENT MOSFET designed for high-density cell applications, offering extremely low RDS(on) and exceptional on-resistance and maximum DC current capability. It is suitable for load/power switching and interfacing switching applications.Product AttributesPackage: SOT-23Epoxy UL Flammability Rating: 94V-0Mounting Position: AnyTechnical SpecificationsParametersSymbolTest ConditionMinTypMaxUnitMaximum Ratings & Thermal CharacteristicsD

Product OverviewThe KIA SEMICONDUCTORS 3308A is an 80A, 80V N-CHANNEL MOSFET designed for efficient power management. It features low on-state resistance (RDS(ON)=6.2m@VGS=10V) to minimize conductive losses and high avalanche current capability. This device is suitable for power supply and DC-DC converter applications. Lead-free and green device options are available.Product AttributesBrand: KIA SEMICONDUCTORSProduct Name: 3308AType: N-CHANNEL MOSFETCertifications: Lead free