Single FETs, MOSFETs

Product OverviewThe KIA3407 is a P-CHANNEL MOSFET utilizing advanced trench technology, offering excellent RDS(on) and low gate charge. It is suitable for use as a load switch or in PWM applications. This is a standard product, Pb-free, and meets ROHS & Sony 259 specifications, with a Green Product ordering option.Product AttributesBrand: KIA SEMICONDUCTORSModel: KIA3407Type: P-CHANNEL MOSFETCertifications: ROHS, Sony 259Environmental: Pb-free, Green ProductTechnical

Product OverviewThis 130A, 60V N-Channel MOSFET from KIA SEMICONDUCTORS (model 2906A) offers low Rds(on) for minimized conductive loss and high avalanche current, making it suitable for power supply, UPS, and power tool applications.Product AttributesBrand: KIA SEMICONDUCTORSProduct Type: N-CHANNEL MOSFETModel: 2906ACertifications: Lead free and green device availableTechnical SpecificationsParameterSymbolTest ConditionsTo-220/263To-247/3PUnitsDrain-source breakdown

Product OverviewThe KIA9435 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(on) and low gate charge, contributing to efficient power conversion. This device meets RoHS and Green Product requirements.Product AttributesBrand: KIA SEMICONDUCTORSModel: 9435Channel Type: P-CHANNELCertifications: RoHS, Green ProductTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitsDrain-Source breakdown

150A, 30V N-Channel Power MOSFETThis advanced trench technology N-Channel Power MOSFET offers high performance with a low RDS(ON) of 2.4m (typ.) at VGS=10V and super low gate charge. It is designed for efficient power management applications and features excellent CdV/dt effect decline, 100% Vds TESTED, and 100% UIS TESTED. A green device is available.Product AttributesBrand: KIA SEMICONDUCTORSPart Number: KND2803CPackage: TO-252Origin: KIA SEMICONDUCTORSTechnical Specificati

Product OverviewThe KIA SEMICONDUCTORS 3308A is an 80A, 80V N-CHANNEL MOSFET designed for high-efficiency power applications. It features low Rds(on) of 6.2m@VGS=10V to minimize conductive loss and high avalanche current capability. This device is suitable for power supplies and DC-DC converters.Product AttributesBrand: KIA SEMICONDUCTORSProduct Name: 3308AChannel Type: N-CHANNELCertifications: Lead free and green device availableTechnical SpecificationsParameterSymbolConditi

Product OverviewThe SI2309 is a P-Channel TrenchFET Power MOSFET designed for load switching in portable devices and DC/DC converters. Its key features include low on-resistance and efficient power dissipation, making it suitable for various power management applications.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain

Product OverviewThe AO4805 is a P-channel Trench Power LV MOSFET featuring a high-density cell design for low RDS(ON). It is designed for applications such as battery protection, power management, and load switching, offering high-speed switching capabilities.Product AttributesBrand: Yongyutai (implied by website)Model: AO4805Technology: Trench Power LV MOSFETPackage: SOP-8Technical SpecificationsParameterConditionMinTypMaxUnitAbsolute Maximum RatingsDrain-Source Breakdown

Product OverviewN-Channel 20-V(D-S) MOSFET featuring TrenchFET technology. This MOSFET is designed for load switching in portable devices and DC/DC converters, offering low on-state resistance at various gate voltages.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-Source VoltageVDS20VGate-Source VoltageVGS8VContinuous

Product OverviewThe KNX2408A is an N-CHANNEL MOSFET from KIA SEMICONDUCTORS, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for a wide range of power switching applications, including hard switched and high frequency circuits, as well as uninterruptible power supplies.Product AttributesBrand: KIA SEMICONDUCTORSProduct Name: KNX2408ATechnical SpecificationsParameterSymbolTO-220TO-263TO-247UnitsConditionsDrain-source voltageVDSS80

Product DescriptionThe SI2301 is a TrenchFET Power MOSFET designed for load switching in portable devices and DC/DC converters. It offers low on-resistance and is suitable for various applications requiring efficient power management.Product AttributesPackage: SOT-23Flammability Rating: Epoxy UL 94V-0Mounting Position: AnyOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-Source On-Resistance

Product OverviewThis product utilizes Geener advanced MOS technology, offering extremely low on-resistance (RDS(on)) and an excellent QgxRDS(on) product (FOM). It is qualified according to JEDEC criteria and is ideal for motor control and drive, battery management, and Uninterruptible Power Supply (UPS) applications.Product AttributesBrand: KMOS SemiconductorCertifications: Qualified according to JEDEC criteriaTechnical SpecificationsPart #D VDS (V)RDS(on) (m)100% DVDS

Product OverviewThe JX3400 is an N-Channel Enhancement Mode Power MOSFET designed for high-density cell applications, offering extremely low RDS(on) and exceptional on-resistance and maximum DC current capability. It is suitable for load/power switching and interfacing switching applications.Product AttributesPackage: SOT-23Epoxy UL Flammability Rating: 94V-0Mounting Position: AnyBrand: JXModel: 3400Type: N-Channel Enhancement Mode Power MOSFETTechnical SpecificationsParamete

Product OverviewThe KNE4603A2 is a high cell density trenched Dual N-channel MOSFET from KIA SEMICONDUCTORS, offering excellent RDS(on) and gate charge for synchronous buck converter applications. It features super low gate charge, green device availability, and excellent Cdv/dt effect decline due to advanced high cell density trench technology. This device meets RoHS and Green Product requirements.Product AttributesBrand: KIA SEMICONDUCTORSModel: KNE4603A2Type: Dual N

Product OverviewThe KIA SEMICONDUCTORS KNX2908B and KNP2908B are N-channel MOSFETs utilizing advanced trench technology. They offer excellent RDS(ON) and low gate charge, making them suitable for a wide range of power switching applications, including hard switched and high frequency circuits, and uninterruptible power supplies. Their high density cell design, fully characterized avalanche voltage and current, and good stability with high EAS contribute to their robust

Product OverviewThe SI2301DS (KI2301DS) is a P-Channel Enhancement MOSFET designed for various electronic applications. It features a low on-resistance and is suitable for surface mounting on FR4 boards.Product AttributesSMD TypeBrand: Kexin (www.kexin.com.cn)Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitNotesDrain-Source Breakdown VoltageVDSSID=-250A, VGS=0V-20VVDS=-20V, VGS=0V-1VVDS=-20V, VGS=0V, TJ=55C-10VGate-Body leakage currentIGSSVDS=0V, VGS

Product OverviewThe SI2307DS (KI2307DS) is a P-Channel Enhancement MOSFET designed for various electronic applications. It features a drain-source voltage of -30V and a continuous drain current of -3.0A at VGS = -10V. With low on-resistance (RDS(ON) < 80m at VGS = -10V), this MOSFET offers efficient power handling and is suitable for switching and amplification circuits.Product AttributesBrand: KexinSMD Type: SOT-23-3Origin: China (implied by www.kexin.com.cn)Technical

Product OverviewThe KCT1808A is an 80V N-CHANNEL MOSFET from KIA SEMICONDUCTORS, utilizing advanced SGT technology for extremely low RDS(on) of 1.25m (typ.) at VGS=10V and an excellent figure of merit (FOM). This high-performance MOSFET is designed for applications such as motor control and drives, battery management, DC/DC converters, and general-purpose applications.Product AttributesBrand: KIA SEMICONDUCTORSPart Number: KCT1808APackage: TOLL-8Origin: KIA SEMICONDUCTORSTech

Product OverviewThis Power MOSFET is produced using KIA's advanced planar stripe DMOS technology, designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses. It is well-suited for low voltage applications such as DC/DC converters and high efficiency switching for power management in portable and battery-operated products.Product AttributesBrand: KIAPart Number: KND8606BPackage: TO-252Origin: KIA SEMICONDUCTORSTechnical

Product Overview11A, 1500V N-CHANNEL MOSFET designed for high voltage power supplies, capacitor discharge, and pulse circuits. Features include RoHS compliance, low gate charge for minimized switching loss, and a fast recovery body diode.Product AttributesBrand: KIAPart Number: KNM62150APackage: TO-247Certifications: RoHS CompliantTechnical SpecificationsParameterSymbolRatingUnitTest ConditionsDrain-to-Source VoltageVDSS1500VGate-to-Source VoltageVGSS±30VContinuous Drain

Product OverviewThe KI8205T is a Dual N-Channel High Density Trench MOSFET designed for surface mount applications. It features a super high dense cell trench design for low RDS(on), offering ruggedness and reliability. Suitable for various electronic applications requiring efficient switching and low power loss.Product AttributesBrand: KexinSMD Type: SOT-23-6Origin: China (indicated by www.kexin.com.cn)Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitDrain