Single FETs, MOSFETs

Product OverviewThe AO6601 (KO6601) is a complementary trench MOSFET designed for various applications. It offers both N-channel and P-channel configurations, providing flexibility for circuit design. Key features include a drain-source voltage of 30V for N-channel and -30V for P-channel, with significant continuous drain current capabilities. The device boasts low on-resistance values at different gate-source voltages, making it efficient for power switching applications

Product OverviewThis 4A, 900V N-Channel MOSFET from KIA SEMICONDUCTORS, model 4390A, utilizes a proprietary new planar technology to offer low gate charge for minimized switching loss and a fast recovery body diode. It is designed for applications such as CRT, TV/Monitor, and other general-purpose uses.Product AttributesBrand: KIA SEMICONDUCTORSPart Number: 4390AOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical Specificatio

Product Overview The 2N7002W is a MOSFET transistor designed for general-purpose applications. It offers ESD protection up to 1000V and complies with RoHS requirements and Halogen Free standards. This device is suitable for various switching and amplification tasks in electronic circuits. Product Attributes Brand: Leiditech Model: 2N7002W Marking: 2C Certifications: RoHS compliant, Halogen Free ESD Protected: 1000V Technical Specifications Parameter Symbol Min. Typ. Max. Unit

Product OverviewThe KIA SEMICONDUCTORS KNX42120A is a 3.0A, 1200V N-CHANNEL MOSFET designed for various power applications. It features low gate charge for minimized switching loss and a fast recovery body diode. Key advantages include RoHS compliance and a typical RDS(ON) of 7.0 at VGS=10V. This MOSFET is suitable for use in adaptors, chargers, and SMPS standby power supplies.Product AttributesBrand: KIACertifications: RoHS CompliantTechnical SpecificationsPart NumberPackage

Product OverviewThe N-Channel 20-V(D-S) TrenchFET Power MOSFET (Model: KSI2302W) is designed for load switching in portable devices and DC/DC converters. It features a SOT-323 plastic-encapsulated package and offers efficient power management capabilities.Product AttributesBrand: YongyutaiModel: KSI2302WPackage: SOT-323Type: N-Channel MOSFETMarking: 2302Technical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-Source VoltageVDS20VGate-Source VoltageVGS8VContinuo

Product OverviewThe KIA SEMICONDUCTORS 4365A is a 650V N-CHANNEL MOSFET designed for high-frequency switching mode power supplies, uninterruptible power supplies (UPS), and electronic ballasts. It features a low on-resistance (RDS(ON) typ.=2.0 @VGS=10V,ID=2A), fast switching speeds, and is 100% avalanche tested with improved dv/dt capability.Product AttributesBrand: KIAPart Number: KND4365A (TO-252), KNF4365A (TO-220F)Technical SpecificationsParameterSymbolConditionsTO252TO22

Product OverviewThis 10A, 450V N-Channel MOSFET from KIA SEMICONDUCTORS, model KNF6145A, utilizes proprietary new planar technology for high performance. It offers a low ON-resistance of 0.39 (typ.) at VGS=10V, minimized switching loss due to low gate charge, and a fast recovery body diode. Ideal for ballast and lighting, DC-AC inverters, and other applications.Product AttributesBrand: KIAPart Number: KNF6145APackage: TO-220FOrigin: KIA SEMICONDUCTORSTechnical SpecificationsP

Product OverviewN-Channel 30-V(D-S) MOSFET featuring TrenchFET technology for exceptional on-resistance and maximum DC current capability. Designed with a high-dense cell structure for extremely low RDS(ON), this MOSFET is ideal for load switching in portable devices and DC/DC converters.Product AttributesBrand: KAOModel: KAO3400Technical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-Source VoltageVDS30VGate-Source VoltageVGS12VContinuous Drain CurrentID5

Product OverviewThis P-CHANNEL MOSFET, rated at -10A and -150V, features advanced high cell density Trench technology for minimized conductive loss and fast switching due to low Gate Charge. It offers low thermal resistance and is 100% Avalanche and DVDS tested. Applications include MB/VGA Vcore, SMPS 2nd Synchronous Rectifier, POL applications, and BLDC Motor drivers.Product AttributesBrand: KIAOrigin: KIA SEMICONDUCTORSModel: 6115APart Numbers: KPY6115A (DFN5*6 package),

Product OverviewThe SI2308DS (KI2308DS) is an N-Channel MOSFET designed for various electronic applications. It offers a high drain-source voltage of 60V and a continuous drain current of up to 2A. With low on-resistance values (RDS(ON) < 160m at VGS=10V), it provides efficient power handling. This MOSFET is suitable for applications requiring fast switching and low power loss.Product AttributesSMD Type: SOT-23-3Brand: KexinWebsite: www.kexin.com.cnTechnical SpecificationsPar

Product OverviewThis 650V N-CHANNEL MOSFET from KIA SEMICONDUCTORS, model 65R700, is engineered with advanced super-junction technology. It is optimized to reduce conduction losses, enhance switching performance, and provide robust protection against high energy pulses in avalanche and commutation modes. This device is ideal for high-efficiency AC/DC power conversion in switching mode applications.Product AttributesBrand: KIA SEMICONDUCTORSProduct Model: 65R700Channel Type: N

Product OverviewThe BSS138AF7 is an N-Channel MOSFET featuring a high-density cell design for low RDS(ON) and extremely low threshold voltage. It offers ESD protection and meets UL 94 V-0 flammability rating, making it a rugged and reliable component for various applications.Product AttributesFlammability Rating: UL 94 V-0Device Marking Code: BSS138AF7 SSPackage Type: SOT723Lead Plating: Pb free solderLead Frame: CAC-5Technical SpecificationsSymbolParameterTest ConditionsMinT

P-CHANNEL MOSFET -3.5A, -20V This P-Channel MOSFET from KIA SEMICONDUCTORS is designed for various applications requiring a -20V drain-source voltage and a continuous drain current of -3.5A. It offers low on-resistance at different gate-source voltages, making it suitable for switching and amplification circuits. Product Attributes Brand: KIA SEMICONDUCTORS Model: 2305 Technical Specifications Parameter Symbol Test Conditions Min Typ Max Units Drain-source breakdown voltage V

Product OverviewThe 2SK3018 is a Silicon N-channel MOSFET designed for applications requiring low on-resistance and fast switching speeds. Its simple drive circuit requirements make it suitable for various electronic designs.Product AttributesBrand: Kexin (implied by website)Origin: China (implied by website)Material: SiliconCertifications: None specifiedTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitAbsolute Maximum RatingsVDSS30VVGSS±20VID100mAIDP*1Pw≤10

Product Overview The 60V N-Channel Enhancement Mode MOSFET utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This device is suitable for applications such as battery protection, load switching, and uninterruptible power supplies. Key features include a VDS of 60V, ID of 3A, and RDS(ON) < 100m @ VGS=10V. Product Attributes Brand: Leiditech Model: PMV37ENEA Technology: Advanced Trench Technology

Product OverviewThe KCX3406A is an N-channel enhancement mode power MOS field effect transistor utilizing KIA's LVMOS technology. Its advanced process and cell structure are optimized for minimal on-state resistance and superior switching performance. This device is ideal for secondary synchronous rectification and power management in inverter systems.Product AttributesBrand: KIA SEMICONDUCTORSPart Number: KCX3406APackage: DFN5*6Origin: KIATechnical SpecificationsParameterSym

Product OverviewThe FDC3612-HF is an N-Channel MOSFET designed for efficient power switching applications. It features a high breakdown voltage of 100V and a continuous drain current of 2.6A. With low on-resistance values (RDS(ON) < 125m at VGS=10V) and fast switching speeds, this MOSFET is suitable for various electronic circuits requiring reliable and high-performance switching.Product AttributesBrand: KexinPart Number: FDC3612-HFSMD Type: SOT-23-6Channel Type: N-ChannelOri

Product OverviewThis 15A, 100V N-Channel MOSFET is manufactured using KIA's advanced planar stripe TRENCH technology. This technology is designed to minimize conduction loss, offer superior switching performance, and ensure high energy pulse withstand capability in avalanche and commutation modes. Key features include very low on-resistance (RDS(ON)=83m typ.), low Crss, fast switching, 100% avalanche testing, and improved dv/dt capability. It is suitable for applications such

Product OverviewThe KIA SEMICONDUCTORS KNX7650A is a 25A, 500V N-CHANNEL MOSFET featuring an advanced planar process, low gate charge for minimized switching loss, and a rugged polysilicon gate structure. It is designed for high-efficiency applications such as BLDC motor drivers, electric welders, and high-efficiency SMPS.Product AttributesBrand: KIAOrigin: KIA SEMICONDUCTORSTechnical SpecificationsParameterSymbolConditionsMinTypMaxUnitsTO-220FTO-3PDrain-to-Source VoltageVDSS

Product OverviewThe JX3400ASS is an N-Channel Enhancement Mode MOSFET featuring 30V technology, low on-state resistance, and fast switching capabilities. It is designed for power switching and load switching applications.Product AttributesBrand: JXPackage: SOT23Origin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitsDrain to Source Breakdown VoltageV(BR)DSSID = 250A,