Single FETs, MOSFETs

Product OverviewThe KX5P02 is a P-Channel MOSFET designed for various electronic applications. It features a low on-resistance and robust performance characteristics, making it suitable for power management and switching tasks.Product AttributesBrand: KexinOrigin: www.kexin.com.cnSMD Type: SOP-8Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitDrain-Source Breakdown VoltageVDSSID=-250A, VGS=0V-20VZero Gate Voltage Drain CurrentIDSSVDS=-18V, VGS=0V-1uAGate

Product OverviewThe IRLML6401 (KRLML6401) is a P-Channel Enhancement MOSFET designed for surface-mount (SMD) applications, specifically in the SOT-23 package. It offers ultra-low on-resistance, fast switching characteristics, and is suitable for various electronic applications requiring efficient power management. The device features a drain-source voltage rating of -12V and a continuous drain current of -4.3A at 25 with VGS=4.5V.Product AttributesBrand: Kexin (implied by www

Product Overview The LM-2N7002LT1G is an N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power MV MOSFET technology. Designed as a voltage-controlled small signal switch, it offers low input capacitance, fast switching speed, and low input/output leakage. This MOSFET is suitable for battery-operated systems, solid-state relays, and direct logic-level interface applications with TTL/CMOS. Product Attributes Brand: Leiditech (implied by domain and part

Product OverviewThe AO3401 (KO3401) is a P-Channel Enhancement Mode MOSFET designed for various electronic applications. It features a drain-source voltage of -30V and a continuous drain current of -4.2A at VGS=-10V. With low on-resistance values, it offers efficient power handling.Product AttributesBrand: Kexin (www.kexin.com.cn)SMD Type: SOT-23-3Marking: A1*Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitAbsolute Maximum RatingsDrain-Source VoltageVDS

Product OverviewThe KIA4N60H is an N-Channel enhancement mode silicon gate power MOSFET designed for high voltage, high speed power switching applications. It offers high ruggedness, fast switching capability, and improved dv/dt capability, making it suitable for switching regulators, switching converters, solenoid drivers, motor drivers, and relay drivers.Product AttributesBrand: KIA SEMICONDUCTORSProduct Name: 4N60HType: N-CHANNEL MOSFETVoltage Rating: 600VCurrent Rating: 4

Product Overview The SQ2348ES is a 30V N-Channel Enhancement Mode MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 4.5V. This device is well-suited for applications such as lithium battery protection, wireless impact, and mobile phone fast charging. Product Attributes Brand: Leiditech Model: SQ2348ES Package Type: SOT-23 Origin: Shanghai Leiditech Electronic Co.,Ltd

Product OverviewThis 75A, 100V N-Channel MOSFET from KIA SEMICONDUCTORS (Model 3510A) is designed for switching applications and power management in inverter systems. It offers low on-resistance, 100% avalanche testing, and a reliable, rugged construction. Lead-free and green device options are available, complying with RoHS standards.Product AttributesBrand: KIA SEMICONDUCTORSProduct Name: 3510ACertifications: RoHS CompliantTechnical SpecificationsParameterSymbolTO-220/263TO

Product OverviewThe SI4435DY (KI4435DY) is a P-Channel MOSFET designed for various applications. It features a VDS of -30V and low on-state resistance (RDS(on)) of 0.02 at VGS=-10V and 0.035 at VGS=-4.5V, making it suitable for power switching and control circuits.Product AttributesBrand: KexinSMD Type: SOP-8Origin: China (implied by www.kexin.com.cn)Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitDrain-Source Breakdown VoltageBVDSSVGS = 0 V, ID = 250 A

Product OverviewThe KIA50N03 is an N-CHANNEL ENHANCEMENT-MODE MOSFET featuring advanced trench process technology and a high-density cell design for ultra low on-resistance. It offers fully characterized avalanche voltage and current, making it suitable for various applications requiring efficient power switching.Product AttributesBrand: KIA SEMICONDUCTORSProduct Name: 50N03Type: N-CHANNEL ENHANCEMENT-MODE MOSFETOrigin: Not specifiedMaterial: Not specifiedColor: Not

Product OverviewThis N-Channel MOSFET, designed for SOT-23 plastic encapsulation, offers a 20V Drain-Source voltage capability. It features low on-resistance at various gate-source voltages (25m@4.5V and 35m@2.5V) and a continuous drain current of 6A. Key advantages include TrenchFET technology for improved performance. It is suitable for load switching in portable devices and DC/DC converters.Product AttributesMarking: AP2306GNTechnical SpecificationsParameterSymbolTest

Product OverviewThe KIA SEMICONDUCTORS KNX1906A is a 230A, 60V N-CHANNEL MOSFET designed for high-efficiency power applications. It features a low RDS(on) of 2.2m (typ.) at VGS=10V, minimizing conductive losses. This device is available in lead-free and green options and offers high avalanche current capability, making it suitable for power supplies, UPS systems, and battery management systems.Product AttributesBrand: KIAProduct Line: KNX1906ADevice Type: N-CHANNEL MOSFETLead

Product OverviewThe KAO3402 is an N-Channel 30-V (D-S) MOSFET featuring TrenchFET technology. It is designed for load switching in portable devices and DC/DC converters, offering efficient power management with low on-state resistance at various gate-source voltages.Product AttributesBrand: CJ-ELEModel: KAO3402Technical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-Source VoltageVDS30VGate-Source VoltageVGS12VContinuous Drain CurrentID4APulsed Diode CurrentIDM

Product OverviewThe 3400 is an N-Channel MOSFET utilizing advanced trench technology, offering excellent RDS(ON) and low gate charge. It is designed for operation with gate voltages as low as 2.5V, making it suitable for battery protection and other switching applications. Key features include high power and current handling capability, and it is a lead-free product.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifica

Product OverviewThis is an 80A, 60V N-Channel Fast-Switching Power MOSFET from KIA SEMICONDUCTORS, model 3406B. It features advanced SGT technology, low RDS(ON) of 7.8m (typ.) at VGS=10V, super low gate charge, and excellent CdV/dt effect decline. It is 100% Vds and UIS tested, making it suitable for fast-switching applications. Green device is available.Product AttributesBrand: KIA SEMICONDUCTORSModel: 3406BTechnology: Advanced SGTOrigin: KMOS SemiconductorTechnical

5N06 N-Channel MOSFET The 5N06 is a 60V N-channel enhancement mode MOSFET designed for general-purpose applications. It offers efficient switching characteristics and robust performance. Product Attributes Brand: Yongyutai Product Type: N-channel MOSFET Package Type: SOT-89 Datasheet Version: Rev.-2.0 Technical Specifications Characteristic Symbol Rating Unit Min Typ Max Absolute Maximum Ratings Drain-Source Voltage BVDSS 60 V Gate-Source Voltage VGS +20 V Drain Current

Product OverviewThe KIA SEMICONDUCTORS KCT1704A is a 260A, 40V N-CHANNEL MOSFET utilizing advanced SGT technology and proprietary High Density Trench Technology. It offers low on-state resistance and is designed for applications such as Battery Management Systems, Load Switches, and Brushless DC Motor Control. This device is RoHS Compliant and Halogen-Free.Product AttributesBrand: KIAPart Number: KCT1704APackage: TOLL-8Certifications: RoHS Compliant & Halogen-FreeTechnical

Product OverviewThis P-Channel TrenchFET Power MOSFET is designed for applications such as load switching in portable devices and DC/DC converters. It offers efficient power management with low on-state resistance and robust performance.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitStatic Drain-source breakdown voltageV(BR

Product OverviewThe 2N7002DW is a dual N-channel MOSFET in a SOT-363 package, featuring a high-density cell design for low RDS(ON). It is designed for voltage-controlled small signal switching applications, offering a rugged and reliable solution with high saturation current capability.Product AttributesBrand: YongyuTai (implied by datasheet URL)Package: SOT-363Technical SpecificationsParameterSymbolTest conditionsMinTypMaxUnitDrain-source breakdown voltageV(BR)DSSVGS=0 V, ID

Product OverviewThis P-CHANNEL MOSFET offers high performance with a low RDS(ON) of 11.6m (typ.) at VGS=-10V, super low gate charge, and 100% EAS guaranteed. It features excellent CdV/dt effect decline and is built with advanced high cell density Trench technology. The device is available as a Green Device.Product AttributesBrand: KIAPart Number: KPD3606APackage: TO-252Origin: KIA SEMICONDUCTORSTechnical SpecificationsParameterSymbolConditionMinTypMaxUnitDrain-Source

Product OverviewThe KIA SEMICONDUCTORS KNX7650A is a 25A, 500V N-CHANNEL MOSFET featuring an advanced planar process, low gate charge for minimized switching loss, and a rugged polysilicon gate structure. It is designed for applications such as BLDC motor drivers, electric welders, and high-efficiency SMPS.Product AttributesBrand: KIAOrigin: KIA SEMICONDUCTORSTechnical SpecificationsParameterSymbolConditionsTo-220FTO-3PUnitsAbsolute Maximum RatingsDrain-to-Source VoltageVDSS5