Single FETs, MOSFETs

Product OverviewThe KNX6450A is an N-channel enhancement mode silicon gate power MOSFET designed for high voltage, high speed power switching applications. It is suitable for use in high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology. Key features include a low Gate Charge to minimize switching loss and a fast recovery body diode.Product AttributesBrand: KIA SEMICONDUCTORSCertifications: ROHS

Product OverviewThe KIA SEMICONDUCTORS KCX3008A is a 120A, 85V N-CHANNEL MOSFET utilizing advanced SGT technology. It offers extremely low RDS(on) of typ=4.5 m@Vgs=10V and an excellent gate charge x RDS(on) product (FOM). This MOSFET is suitable for motor drives, synchronous rectification, DC/DC conversion, and general-purpose applications.Product AttributesBrand: KIAOrigin: KIA SEMICONDUCTORSTechnical SpecificationsParameterSymbolConditionsMinTypMaxUnitsAbsolute Maximum

Product OverviewThe KIA SEMICONDUCTORS KND3080 is an 80A, 30V N-Channel Logic Level Enhancement Mode Power MOSFET. It features low RDS(ON) of 4.3m (typ.) at VGS=10V, super low gate charge, and excellent CdV/dt effect decline. This device is 100% Vds and UIS tested, with a green device available. It is suitable for applications requiring high current and low on-resistance.Product AttributesBrand: KIA SEMICONDUCTORSPart Number: KND3080Package: TO-252Origin: Not specifiedMateria

Product Overview The AP65N06DF is an N-Channel Enhancement Mode Power MOSFET designed for various applications. It offers a continuous drain current of 20A at 25C and 60A pulsed drain current. With a low drain-source on-state resistance of 7.5 m at VGS=10V and ID=20A, and 10 m at VGS=4.5V and ID=10A, this MOSFET is suitable for power switching applications. Its robust construction and specified thermal resistance make it a reliable component for demanding environments.

Product OverviewThis N-Channel MOSFET features a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, and an excellent package for good heat dissipation. It is designed for power switching applications.Product AttributesDevice Code: 4468AN-channel MOSFETTechnical SpecificationsSymbolParameterConditionMinTypMaxUnitBV(BR)DSSDrain-Source Breakdown VoltageVGS=0VID=250A30----VIDSSZero Gate Voltage Drain CurrentVDS=30VVGS=0V----1

Product Overview The NVTYS010N06CL is an N-Channel, Enhancement Mode Power MOSFET designed for various applications. It features a DFN3*3-8L package and offers robust performance with a continuous drain current of up to 20 A at 25C and 60 A pulsed drain current. This MOSFET is suitable for applications requiring efficient power handling and switching capabilities. Product Attributes Brand: Leiditech Model: NVTYS010N06CL Package Type: DFN3*3-8L Channel Type: N-Channel Mode:

Product OverviewThe 5N10 utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This device is well-suited for battery protection and other switching applications.Product AttributesBrand: 5N10Application: Battery protection, Load switch, Uninterruptible power supplyTechnical SpecificationsSymbolParameterConditionsMin.Typ.Max.UnitVDSDrain-Source VoltageTC=25100VVGSGate-Source VoltageTC=2520VID@TA

Product OverviewThe BSS138 is an N-Channel Enhancement-Mode MOS Field Effect Transistor designed for various electronic applications. It offers a drain-source voltage of up to 50V and a continuous drain current of 220mA, with a pulsed drain current capability of 880mA. This device is suitable for general-purpose switching and amplification tasks.Product AttributesDevice Marking: BSS138=SSPackage Type: SOT-23Technical SpecificationsCharacteristicSymbolMinTypMaxUnitNotesDrain

Product OverviewThe KNX6140S is an N-Channel enhancement mode silicon gate power MOSFET designed for high voltage, high speed power switching applications. It offers high ruggedness, fast switching, and improved dv/dt capability, making it suitable for switching regulators, switching converters, solenoid drivers, motor drivers, and relay drivers.Product AttributesBrand: KIA SEMICONDUCTORSOrigin: Not specifiedMaterial: Silicon Gate Power MOSFETColor: Not specifiedCertification

Product OverviewThis 130A, 60V N-CHANNEL MOSFET from KIA SEMICONDUCTORS, model 2906A, offers low Rds(on) for minimized conductive loss and high avalanche current. It is suitable for applications such as Power Supply, UPS, and Power Tools.Product AttributesBrand: KIA SEMICONDUCTORSDevice Type: N-CHANNEL MOSFETModel: 2906ACertifications: Lead free and green device availableTechnical SpecificationsParameterSymbolRating UnitsTest ConditionsMinTypMaxDrain-source breakdown

Product OverviewThe IXFT150N30X3HV, IXFH150N30X3, and IXFK150N30X3 are high-performance N-Channel Enhancement Mode X3-Class HiPerFETTM Power MOSFETs designed for demanding applications. They feature international standard packages, low RDS(ON) and QG, avalanche rating, and low package inductance, offering high power density, ease of mounting, and space savings. These MOSFETs are ideal for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC

Product OverviewThe 6P03 is a P-channel enhancement mode MOSFET designed for various power management applications. It features low on-resistance, making it suitable for load switching, DC-DC conversion, and general power management tasks. Its robust design and specified electrical characteristics ensure reliable performance in demanding environments.Product AttributesBrand: Yongyutai (implied by URL)Product Marking: 6P03Type: P-channel MOSFETTechnical SpecificationsCharacter

SOT-23 Plastic-Encapsulated TransistorsThis product features TrenchFET Power MOSFET technology, designed for efficient power management applications. Its robust design and high performance characteristics make it suitable for various electronic circuits requiring reliable switching and amplification.Product AttributesBrand: Not SpecifiedOrigin: Not SpecifiedMaterial: Plastic-EncapsulatedColor: Not SpecifiedCertifications: Not SpecifiedTechnical SpecificationsParameterSymbolTe

Product OverviewThe P-Channel 20-V (D-S) MOSFET, specifically the KIRLML6402TRPBF, offers ultra-low on-resistance and is designed for efficient power management in portable devices and DC/DC converters. It is available in tape and reel packaging.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-Source VoltageVDS-20VGate

Product Overview The KPX7910A is a -28A, -100V N-CHANNEL MOSFET from KIA SEMICONDUCTORS. It features advanced CRM(CQ) Trench technology, offering extremely low on-resistance (RDS(on)) and an excellent Gate Charge x RDS(on) product (FOM). This MOSFET is qualified according to JEDEC criteria and is suitable for applications such as motor control and drive, battery management, and Uninterruptible Power Supplies (UPS). Product Attributes Brand: KIA Part Number: KPX7910A Package:

High Voltage Power MOSFET - N-Channel Enhancement ModeThis High Voltage Power MOSFET offers high blocking voltage and is available in high voltage packages for easy mounting, space savings, and high power density. It is suitable for high voltage power supplies, capacitor discharge applications, pulse circuits, and laser and X-ray generation systems.Product AttributesBrand: IXYSCopyright: 2015 IXYS CORPORATIONPatents: U.S. patents covered include 4,860,072, 4,881,106, 4,931

Product Overview The IRLML9303 is a P-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and is designed for operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is manufactured by Shanghai Leiditech Electronic Co.,Ltd. Product Attributes Brand: Leiditech Origin: China Package Type: SOT23 Technology: Trench Technology Channel Type: P-Channel Mode:

AO3420 N-Channel MOSFETThe AO3420 is a 20V N-Channel Enhancement Mode Field Effect Transistor designed for various electronic applications. It offers efficient power handling and switching capabilities within a compact SOT-23 package.Product AttributesProduct Marking: AO3420 = ANManufacturer Website: www.yongyutai.comTechnical SpecificationsCharacteristicSymbolMinTypeMaxUnitConditionsDrain-Source Breakdown VoltageBVDSS20--VID =250uA,VGS=0VGate Threshold VoltageVGS(th)0.450

Product OverviewThe KNX2912A is a N-CHANNEL MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide variety of power switching applications, including hard switched and high-frequency circuits, as well as uninterruptible power supplies. Its high-density cell design contributes to lower Rdson, and it is fully characterized for avalanche voltage and current with good stability and uniformity.Product AttributesB

Product OverviewThe KNX3403B is an N-channel enhancement mode power MOSFET manufactured using KIA's LVMOSFET technology. This device is engineered with an improved process and cell structure to achieve minimal on-state resistance and superior switching performance. It is widely utilized in UPS and Power Management for Inverter Systems.Product AttributesBrand: KIAOrigin: KIA SEMICONDUCTORSModel: KNX3403BTechnical SpecificationsPart NumberPackageBrandVDSS (V)ID (A) @ TC=25CRDS