Single FETs, MOSFETs

Product OverviewThe SI2305F is a P-channel enhancement mode MOS Field Effect Transistor designed for various electronic applications. It offers robust performance with specified voltage and current ratings, making it suitable for power switching and control circuits.Product AttributesProduct Name: SI2305FPackage Type: SOT-89Product Marking: SI2305F=A5Origin: Datasheet from www.yongyutai.comRevision: -2.0Technical SpecificationsCharacteristicSymbolMinTypMaxUnitConditionsDrain

Product OverviewThe LWS6004A5 is a high-performance P-Channel Power MOSFET from LW-Micro, utilizing advanced SGT technology for excellent RDS(ON) and low gate charge. It is designed for efficient power management in hard-switched and high-frequency applications, offering fast switching and low reverse transfer capacitances. This device is 100% DVDS and Avalanche tested, ensuring reliability. The TO-263 package is ROHS compliant and Halogen Free.Product AttributesBrand: LW

Product Overview The LM5D50P10 is a P-Channel Enhancement Mode MOSFET designed for various applications. It features a -100V Drain-Source Voltage and a continuous drain current capability of -50A at 25 (VGS @ -10V). With a low on-resistance of 40m (Typ.) at VGS=-10V and ID=-20A, and a total power dissipation of 140W at 25, this MOSFET offers efficient performance. It is suitable for applications requiring high current handling and robust operation, as indicated by its single

Product OverviewThe KIA Semiconductors KNX9120A is a 40A, 200V N-Channel MOSFET featuring proprietary new planar technology. It offers a low RDS(ON) of 50m (typ.) at VGS=10V, minimized switching loss due to low gate charge, and a fast recovery body diode. This MOSFET is ideal for DC-DC converters, DC-AC inverters for UPS, SMPS, and motor controls.Product AttributesBrand: KIA SemiconductorsPart Number: KNX9120ATechnical SpecificationsParameterSymbolConditionsTO-220TO

Product Overview The SQ2303ES is a P-Channel Power MOSFET utilizing advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. This device is ideally suited for use as a load switch or in PWM applications. It features a VDS of -30V and ID of -5.0A at VGS=-10V, with low on-state resistance across various gate voltages, including 50m (Max) at VGS=-10V, 65m (Max) at VGS=-4.5V, and 90m (Max) at VGS=-2.5V. Product

Product Overview The IRLML6406 is a 20V N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It is designed to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. This MOSFET is suitable for battery protection and other switching applications, including wireless impact and mobile phone fast charging. Its key advantages include low gate charge and efficient operation. Product Attributes Brand: Leiditech Model:

Product OverviewThe AO4485 is a P-Channel MOSFET designed for high-density cell applications, offering ultra-low RDS(ON). It features fully characterized avalanche voltage and current, along with excellent package thermal dissipation. This MOSFET is suitable for PWM applications, power management, and load switching.Product AttributesDevice Code: 4485APackage: SOP-8Technical SpecificationsSymbolParameterConditionMinTypMaxUnitVDSDrain-Source Breakdown VoltageVGS=0V, ID=-250A

Product OverviewThe KPE4403A is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(on) and gate charge characteristics, contributing to efficient power conversion. This device meets RoHS and Green product requirements.Product AttributesBrand: KIA SEMICONDUCTORSModel: KPE4403AChannel Type: P-CHANNELCertifications: RoHS, Green device availableTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxU

Product OverviewThe IXTQ69N30P and IXTT69N30P are N-Channel Enhancement Mode PolarTM Power MOSFETs from IXYS, offering high power density, easy mounting, and space savings. They are designed for high-speed power switching applications and feature fast intrinsic diodes, avalanche rating, low RDS(ON), low QG, and low package inductance.Product AttributesBrand: IXYSOrigin: USA (implied by US patents)Certifications: Covered by multiple US patents (listed in source)Material: Not

Product OverviewThe KAO3407 is a P-Channel 30V Power MOSFET featuring TrenchFET technology. It is designed for applications such as load switching in portable devices and DC/DC converters. Its key advantages include low on-state resistance (RDS(on)) and efficient power handling.Product AttributesBrand: KAOModel: KAO3407Type: P-Channel MOSFETTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-Source VoltageVDS-30VGate-Source VoltageVGS±20VContinuous Drain

Product Overview The DMG3402LQ is a 30V N-Channel Enhancement Mode MOSFET featuring advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. This device is well-suited for battery protection and other switching applications, including lithium battery protection, wireless impact, and mobile phone fast charging. Product Attributes Brand: Leiditech Model: DMG3402LQ Package Type: SOT-23 Technology: Advanced

Product OverviewThe 50N06 is an advanced trench MOSFET designed with high cell density and a low resistance package, resulting in extremely low RDS(ON). This device is optimized for load switch and battery protection applications, offering features such as fast switching due to low gate charge and low thermal resistance.Product AttributesBrand: CJ-ELEcModel: 50N06Package: TO-252Technical SpecificationsParameterSymbolConditionMin.Typ.Max.UnitAbsolute Maximum RatingsDrain

Product OverviewSOT-23 P-Channel Enhancement-Mode MOS FETs designed for various applications requiring efficient switching and control. These transistors offer reliable performance with key electrical characteristics outlined for specific operating conditions.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsCharacteristicSymbolMinTypMaxUnitNotesDrain-Source VoltageBVDSS

Product OverviewThis N-Channel MOSFET in a SOT-23 package is designed for efficient power switching applications. It features TrenchFET technology for enhanced performance and low on-resistance, making it suitable for load switching in portable devices and DC/DC converters.Product AttributesMarking: NDS331NEquivalent Circuit: 1.GATE, 2.SOURCE, 3.DRAINTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitStatic Electrical CharacteristicsV(BR)DSSVGS = 0V, ID

Product Overview130A, 80V N-CHANNEL MOSFET designed for power switching applications, including hard switched and high-frequency circuits, as well as uninterruptible power supplies. Key features include low RDS(ON) for minimized conductive loss and high avalanche current capability. Available in Lead-free and Green Device options.Product AttributesBrand: KIA SEMICONDUCTORSOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Lead free and Green

Product OverviewThe AO4406 is an N-Channel MOSFET featuring advanced high cell density Trench technology, offering super low gate charge and excellent CdV/dt effect decline. It is designed for high-frequency point-of-load synchronous buck converters, networking DC-DC power systems, and load switch applications. This device provides efficient power management with low on-state resistance.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor:

Product OverviewThis is a 40A, 200V N-CHANNEL MOSFET from KIA SEMICONDUCTORS, model 9120A. It features proprietary new planar technology, a low RDS(ON) of 50m (typ.) at VGS=10V, low gate charge for minimized switching loss, and a fast recovery body diode. It is suitable for applications such as DC-DC converters, DC-AC inverters for UPS, SMPS, and motor controls.Product AttributesBrand: KIA SEMICONDUCTORSPart Number: KNP9120APackage: TO-220Origin: KIATechnical SpecificationsPa

Product OverviewThe KAO3401 is a P-Channel 30V (D-S) MOSFET featuring exceptional on-resistance and maximum DC current capability. Its high-density cell design ensures extremely low RDS(ON). This MOSFET is ideal for load switching in portable devices and DC/DC converters.Product AttributesBrand: CJ (implied by URL www.cj-elec.com)Origin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionMi

Product OverviewThe N-Channel Enhancement Mode MOSFET features an advanced trench process technology, offering low threshold voltage and fast switching speed. It is Halogen-Free & Lead-Free and ESD protected up to 2KV (HBM). Ideal for load switching in portable devices and as a voltage-controlled small signal switch.Product AttributesBrand: YongyutaiMarking: 72KCertifications: Halogen-Free & Lead-FreeTechnical SpecificationsParameterSymbolMin.Typ.Max.UnitConditionsAbsolute

Product OverviewThis SOT-23 N-Channel MOSFET offers a 20V drain-source voltage and low on-resistance, making it suitable for load switching in portable devices and DC/DC converters. Its TrenchFET technology provides enhanced performance.Product AttributesMarking: IRLML6244TRPBFTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-Source VoltageVDS20VGate-Source VoltageVGS±12VContinuous Drain CurrentID6AContinuous Source-Drain Current (Diode Conduction)IS0