Single FETs, MOSFETs

Product OverviewThe 2N7002E is an N-Channel Enhancement-Mode MOS FET with ESD protection, designed for general-purpose switching applications. It features a SOT-23 package.Product AttributesBrand: 2NModel: 7002EPackage: SOT-23Channel Type: N-ChannelMode: Enhancement-ModeProtection: ESDTechnical SpecificationsCharacteristicSymbolMinTypMaxUnitNotesDrain-Source Breakdown VoltageBVDSS60V(ID=250uA,VGS=0V)Gate Threshold VoltageVGS(th)1.02.5V(ID=250uA,VGS= VDS)Drain-Source On

Product OverviewThis P-Channel 30V (D-S) MOSFET features exceptional on-resistance and maximum DC current capability due to its high-density cell design for extremely low RDS(ON). It is ideal for load switching in portable devices and DC/DC converters.Product AttributesBrand: CJ (implied by www.cj-elec.com)Origin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-Source

Product OverviewThe K3080K is a high-performance N-Channel MOSFET featuring a high-density cell design for ultra-low RDS(ON). It offers fully characterized avalanche voltage and current with good stability and uniformity, making it suitable for load switching, hard switched and high frequency circuits, and uninterruptible power supplies. The excellent package design ensures good heat dissipation.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not

Product OverviewThe AO3416 is an N-Channel Power MOSFET featuring advanced trench technology for excellent RDS(ON) and low gate charge. It operates with gate voltages as low as 1.8V, making it suitable for load switch and PWM applications. This device is ESD protected with a 2000V HBM rating.Product AttributesBrand: Yongyutai (inferred from website URL)Origin: China (inferred from website URL)Certifications: ESD Protected (2000V HBM)Technical SpecificationsParameterSymbolTest

Product OverviewThe IXYS TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated series, including models IXTT76P10THV, IXTA76P10T, IXTP76P10T, and IXTH76P10T, offers high performance with a VDSS of -100V and ID25 of -76A. Key advantages include an extended FBSOA, fast intrinsic diode, and low RDS(ON) and QG, making them suitable for high-side switching, push-pull amplifiers, DC choppers, automatic test equipment, current regulators, and battery charger applications

Product OverviewThe AO3402 is an N-channel Advanced Power MOSFET designed for efficient power management in portable devices and switching applications. It features low on-resistance at various gate-source voltages, including 3.3V logic-level control, making it suitable for DC-to-DC converters, low-side load switches, and charging circuits. The SOT23 package ensures a compact footprint, and the device is Pb-free and RoHS compliant.Product AttributesBrand: lgesemiPackage:

Product OverviewThis N-Channel MOSFET in a SOT-523 surface mount plastic package offers low on-resistance, low gate threshold voltage, and low input capacitance. It is designed for various applications requiring efficient switching and low power consumption. The device features a Matte Tin(Sn) lead finish and is RoHS Compliant and Green EMC.Product AttributesDevice Marking Code: K72Part Number: K2N7002T-7-FPackage: SOT-523Lead Finish: Matte Tin(Sn)Certifications: RoHS

Product OverviewThe KM3134 is an N-Channel MOSFET featuring Trench Power LV MOSFET technology, designed for high power and current handling capabilities. It is suitable for applications such as load/power switching, interfacing switching, and logic level shifting, offering efficient performance with low on-state resistance.Product AttributesDevice Code: 34KBrand: YongyutaiModel: KM3134Type: N-Channel MOSFETPackage: SOT-23Technical SpecificationsParameterSymbolConditionMinTypM

Product OverviewThis product offers RoHS and Halogen Free compliance, making it suitable for environmentally conscious applications. The 'S-' prefix designates suitability for automotive and other applications with stringent site and control change requirements, including AEC-Q101 qualification and PPAP capability. It also features 1000V ESD protection.Product AttributesCompliance: RoHS, Halogen FreeSpecial Designation: S- prefix for automotive and unique control change

Product OverviewThe 2N7002 is an N-Channel MOSFET in a SOT-23 package, designed for voltage-controlled small signal switching applications. It features a high-density cell design for low RDS(ON), offering ruggedness, reliability, and high saturation current capability.Product AttributesMarking: 7002Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitsDrain-Source voltageVDS60VDrain currentID115mAPower DissipationPDTA=25225mWJunction TemperatureTj150Storage

Product OverviewThe 4409 is a P-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and the capability to operate with gate voltages as low as 4.5V. This MOSFET is designed for high power and current handling, making it suitable for applications like battery switches, load switches, and power management.Product AttributesBrand: 4409Material: Not specifiedOrigin: Not specifiedColor: Not specifiedCertificatio

Product OverviewThis N-Channel MOSFET in a SOT-523 surface mount plastic package offers low on-resistance, fast switching speed, and is ideal for low-voltage drive applications in portable equipment. Its easily designed drive circuits and suitability for paralleling make it a versatile component. It is RoHS Compliant & Green EMC with a matte tin lead finish.Product AttributesPackage: SOT-523Lead Finish: Matte Tin(Sn)Certifications: RoHS Compliant & Green EMCWeight: approx. 0

Product Overview The LM-MMBF170LT1G is an N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power MV MOSFET technology. Designed as a voltage-controlled small signal switch, it offers low input capacitance, fast switching speed, and low input/output leakage. This MOSFET is suitable for battery-operated systems, solid-state relays, and direct logic-level interface applications with TTL/CMOS. Product Attributes Brand: Leiditech Technology: Trench Power MV

Product OverviewThe KCX3008B is an 85V N-CHANNEL MOSFET from KIA SEMICONDUCTORS, featuring advanced SGT technology for extremely low RDS(on) of typically 4.5 m at Vgs=10V. Its excellent gate charge x RDS(on) product (FOM) makes it suitable for Motor Drives, SR (Synchronous Rectification), DC/DC Converters, and general-purpose applications.Product AttributesBrand: KIAPart Number: KCX3008BPackage: TO-263Technical SpecificationsParameterSymbolConditionsMinTypMaxUnitAbsolute

Product OverviewThe 85A, 30V N-CHANNEL MOSFET (KNY3903A) from KIA SEMICONDUCTORS features very low on-resistance (RDS(ON)=4.0m typ. @VGS=10V), low Crss, and fast switching capabilities. It is 100% avalanche tested and offers improved dv/dt capability, making it suitable for PWM applications, load switches, and power management.Product AttributesBrand: KIAPart Number: KNY3903APackage: DFN5*6Origin: KIA SEMICONDUCTORSTechnical SpecificationsParameterSymbolRatingUnitsTest

Product Overview-30V/-12A P-Channel MOSFET featuring Trench Power LV MOSFET technology and a high-density cell design for low RDS(ON). Ideal for high-speed switching applications such as battery protection, power management, and load switching.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterConditionMinTypMaxUnitDrain-Source Breakdown VoltageVGS=0VID=-250A-30---

Product OverviewThis P-Channel 60-V (D-S) Enhancement Mode Field Effect Transistor offers a third-generation Power MOSFET design. It provides an optimal balance of fast switching, rugged device construction, low on-resistance, and cost-effectiveness. Designed for surface mounting using vapor phase, infrared, or wave soldering, it also features a straight lead version for through-hole mounting. Power dissipation up to 1.5 W is achievable in typical surface mount applications

Product OverviewThe KIA SEMICONDUCTORS KPY3404A is a high-performance P-CHANNEL MOSFET designed for demanding applications. It features a low on-resistance (RDS(ON)=5m typ. @ VGS=-10V), super low gate charge, and 100% EAS guaranteed. This device offers excellent CdV/dt effect decline and is built with advanced high cell density Trench technology. It is available as a Green Device.Product AttributesBrand: KIA SEMICONDUCTORSPart Number: KPY3404APackage: DFN5*6Origin: Not

Product OverviewThe AO3415 is a P-Channel MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 1.8V. This device is well-suited for load switch applications.Product AttributesBrand: LGE SemiconductorPackage: SOT-23Model: AO3415Contact: lge@lgesemi.comWebsite: http://www.lgesemi.comTechnical SpecificationsParameterSymbolConditionsMinTypMaxUnitsAbsolute Maximum RatingsVDSTA=25C-20VVGSTA=25C

Product OverviewThe AP2310GN is an N-Channel 60-V (D-S) MOSFET featuring TrenchFET Power technology. It is designed for load switching in portable devices and DC/DC converters, offering efficient power management.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolConditionMinTypMaxUnitMaximum RatingsDrain-Source VoltageVDS60VGate-Source VoltageVGS±20VContinuo