Single FETs, MOSFETs

Product OverviewThis P-Channel 12-V(D-S) MOSFET features ultra low on-resistance and is available in tape and reel. It is designed for applications such as load switches for portable devices and DC/DC converters.Product AttributesBrand: KIRLML6401TRPBFOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-Source VoltageVDS-12VGate-Source VoltageVGS±8VContinuous Drain

Product Overview The LM2301 is a P-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 2.5V. This device is well-suited for applications such as load switching and Pulse Width Modulation (PWM). Its high power and current handling capability, along with its lead-free status and SOT-23 surface mount package, make it a versatile component for power

Product Overview The LMTL2N02 is a 20V N-Channel Enhancement Mode MOSFET featuring advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This device is ideally suited for battery protection and other switching applications, including load switches and uninterruptible power supplies. Product Attributes Brand: Leiditech Model: LMTL2N02 Package Type: SOT-23 Technical Specifications Parameter Conditions

Product Overview The SQD70140EL is an N-Channel Enhancement Mode MOSFET designed with advanced trench technology. It offers excellent RDS(ON), low gate charge, and is capable of operating with gate voltages as low as 4.5V. This device is well-suited for battery protection and other switching applications. Product Attributes Brand: Leiditech Product ID: SQD70140EL Package Marking: SQD70140EL Ordering Information: AP50N10D Technology: Advanced Trench Technology Channel Type: N

Product Overview The LM-2N7002 is a 60V N-Channel Enhancement Mode MOSFET designed with advanced trench technology. It offers excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This device is suitable for applications such as battery protection, load switching, and uninterruptible power supplies, providing reliable switching performance. Product Attributes Brand: Leiditech Package Type: SOT-23 Technical Specifications Parameter Symbol

Product Overview The LMTL5P02 is a P-Channel Enhancement Mode MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. This device is ideal for battery protection and other switching applications, including load switches and uninterruptible power supplies. Product Attributes Brand: Leiditech Model: LMTL5P02 Package: SOT-23 Origin: Shanghai Leiditech Electronic Co.,Ltd Technical

Product OverviewThis N-Channel MOSFET in a SOT-523 surface mount plastic package offers low on-resistance and fast switching speeds, making it ideal for low-voltage drive applications in portable equipment. Its easily designed drive circuits and suitability for paralleling enhance its versatility. This device is RoHS Compliant & Green EMC with a matte tin lead finish.Product AttributesPackage: SOT-523Lead Finish: Matte Tin(Sn)Certifications: RoHS Compliant & Green EMCWeight:

Product OverviewThe LGE3M35120Q is a Silicon Carbide Power MOSFET designed for high-performance applications requiring high blocking voltage and high-frequency operation. It offers low on-resistance and a fast intrinsic diode with low reverse recovery, contributing to higher system efficiency and reliability. This device is suitable for parallel operation without thermal runaway and is ideal for high-temperature applications and hard switching scenarios.Product AttributesBran

Product OverviewThe LGE2301 is a P-Channel 20-V (D-S) MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This device is well-suited for applications such as load switching and Pulse Width Modulation (PWM).Product AttributesBrand: LGEProduct Type: P-Channel 20-V (D-S) MOSFETTechnology: Advanced TrenchCertifications: Lead-free product acquiredPackage: SOT-23Origin: http://www

Product Description The 15N10 N-Channel Enhancement Mode Power MOSFET utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. Its high power and current handling capability make it suitable for battery protection and other switching applications, including battery switches and DC/DC converters. This lead-free product offers reliable performance in a surface mount package. Product Attributes

Product Overview The DMN601WKQ is a semiconductor device designed for various electronic applications. It offers ESD protection up to 1000V and complies with RoHS requirements and Halogen Free standards. This device is suitable for applications requiring reliable performance and robust protection. Product Attributes Brand: Leiditech Compliance: RoHS, Halogen Free Protection: ESD Protected (1000V) Packaging: 3000/Tape&Reel (SC70/SOT-323) Technical Specifications Parameter

Product Overview The PMV50EPEA is a P-Channel Super Enhancement Mode MOSFET featuring Trench Power LV MOSFET technology and a high-density cell design for low RDS(ON). It offers a drain-source voltage of -30V and a continuous drain current of -4.1A. This MOSFET is designed for high-speed switching applications, making it suitable for battery protection, load switching, and power management. Product Attributes Technology: Trench Power LV MOSFET Mode: Super Enhancement Mode

Product OverviewThe AO3423 is a P-Channel TrenchFET Power MOSFET designed for load switching in portable devices and DC/DC converters. It features ESD protection up to 2.0KV and offers a low on-state resistance for efficient power management.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-Source VoltageVDS-20VGate-Source

Product Overview The NTA7002NT1G is an N-channel enhancement mode Power MOSFET designed for low voltage drive applications. It features low on-resistance and fast switching speed, making it ideal for portable equipment and interfacing/switching applications. The device is easily designed into drive circuits and is suitable for paralleling. Product Attributes Brand: Leiditech Model: NTA7002NT1G Type: N-Channel Enhancement Mode Power MOSFET Package: SOT-523 Origin: Shanghai

Product OverviewThis P-Channel 30V (D-S) MOSFET features ultra-low on-resistance and is ideal for load switching in portable devices and DC/DC converters. Available in tape and reel packaging.Product AttributesBrand: Not SpecifiedOrigin: Not SpecifiedMaterial: Not SpecifiedColor: Not SpecifiedCertifications: Not SpecifiedTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-Source VoltageVDS-30VGate-Source VoltageVGS±20VContinuous Drain CurrentID-3.0APulsed

Product OverviewThe 50N03 is an N-channel enhancement mode power MOSFET designed for high-performance applications. It features a continuous drain current of 50A and a drain-source voltage of 30V. Key advantages include low capacitance, optimized gate charge, and fast switching capability, making it suitable for applications requiring efficient power management. This device meets ROHS and Green Product requirements with full function reliability approval.Product AttributesBra

Product Overview The DMN6075SQ is a 60V N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate at gate voltages as low as 4.5V. This device is well-suited for battery protection and other switching applications, providing reliable performance in demanding environments. Product Attributes Brand: Leiditech Model: DMN6075SQ Package Type: SOT-23 Technical Specifications Symbol

Product OverviewThe KAO4421 is a P-Channel MOSFET designed for power switching applications. It features an excellent SOP-8 package for superior heat dissipation, ultra-low gate charge, low reverse transfer capacitance, and fast switching capability. The device is specified for avalanche energy and offers efficient operation with low on-state resistance.Product AttributesBrand: KAODevice Code: 4421BDatasheet Revision: 2.0Website: www.yongyutai.comTechnical SpecificationsParam

Product Overview This document describes the 5N10, a 100V N-channel enhancement mode MOS Field Effect Transistor in an SOT-89 package. It offers key electrical characteristics for various applications. Product Attributes Brand: YONGYUTAI Product Marking: 5N10 Datasheet Revision: Rev.-2.0 Technical Specifications Characteristic Symbol Rating/Min Typical Max Unit Conditions Drain-Source Voltage BVDSS 100 - - V - Gate- Source Voltage VGS - - +20 V - Drain Current (continuous) ID

Product OverviewThe IXFA80N25X3, IXFP80N25X3, IXFQ80N25X3, and IXFH80N25X3 are high-performance N-Channel Enhancement Mode Power MOSFETs from IXYS. Featuring X3-Class HiPerFETTM technology, these devices offer low RDS(ON) and low QG, making them suitable for high-density power applications. They are avalanche rated and possess a fast intrinsic diode, ensuring reliability and efficiency in demanding switching and resonant power circuits. Their international standard packages