Single FETs, MOSFETs

Product OverviewThe SI2333 is a P-Channel Advanced Power MOSFET designed for efficient power management in portable devices. It features low RDS(on) at various gate-source voltages, including logic-level control at -3.3V, making it suitable for applications like charging switches, small brushless DC motor drives, load switches, DC-to-DC converters, and general power management functions. Its SOT-23 package is Pb-free and RoHS compliant.Product AttributesBrand: LGE SemiCertifi

Product OverviewThe 2305 utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. This P-Channel MOSFET is suitable for use as a load switch or in PWM applications, offering high power and current handling capability.Product AttributesBrand: LG Semicon (implied by URL and email)Certifications: Lead free product is acquiredPackage: SOT-23Technical SpecificationsParameterSymbolConditionMinTypMaxUnitDrain

Product Overview The LM-NTR5103NT1G is an N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power MV MOSFET technology. It functions as a voltage-controlled small signal switch, offering low input capacitance and fast switching speeds. Key advantages include low input and output leakage, making it suitable for battery-operated systems, solid-state relays, and direct logic-level interfaces with TTL/CMOS. Product Attributes Brand: Leiditech Technology: Trench

Product Overview The 2N7002HW is a semiconductor device designed for various electronic applications. It features RoHS compliance and Halogen Free material, ensuring environmental responsibility. The device offers ESD protection up to 1000V, enhancing its robustness in handling. With a maximum drain-source voltage of 60V and continuous drain current capabilities, it is suitable for switching and amplification tasks in industrial and consumer electronics. Product Attributes

Product Overview The Si2300DS is a 30V N-Channel Enhancement Mode MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. This device is ideal for battery protection and other switching applications, including lithium battery protection, wireless impact, and mobile phone fast charging. Product Attributes Brand: Leiditech Model: Si2300DS Package Type: SOT-23 Technical Specifications

Product OverviewN-Channel 20-V(D-S) MOSFET featuring TrenchFET Power MOSFET technology. Designed for efficient power switching applications.Product AttributesBrand: KAOModel: KAO3414Package: SOT-23Technical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-Source VoltageV(BR)DSSVGS = 0V, ID = 250A20VGate-Source VoltageVGS8VGate-Source Threshold VoltageVGS(th)VDS =VGS, ID = 250A0.41.4VGate-Body Leakage CurrentIGSSVDS =0V, VGS = 8V100nAZero Gate Voltage Drain

Product OverviewThe 30V/5.0A N Channel Advanced Power MOSFET G2306 is designed for efficient power management in various electronic applications. It features low RDS(on) at VGS=10V and 5V logic-level control, making it suitable for DC-to-DC converters, battery-driven portable devices, low-side load switching, switching circuits, and high-speed line drivers. This Pb-free and RoHS compliant component comes in a compact SOT23 package.Product AttributesBrand: LGE SemiconductorPac

Product OverviewThe 5N65 is a 650V/5A N-Channel MOSFET designed for power switching applications. It features low gate charge, low Ciss, fast switching, 100% avalanche tested, and improved dv/dt capability, making it suitable for efficient power conversion.Product AttributesBrand: Yongyutai (implied by website)Device Code: 5N65Product Code: XXXXXXPackage: TO-252Technical SpecificationsSymbolParameterConditionMinTypMaxUnitAbsolute Maximum RatingsVDSDrain-Source Voltage650VVGSG

Product Overview The SQ2301ES is a 20V P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 2.5V. This device is ideal for applications such as battery protection, load switching, and uninterruptible power supplies. Product Attributes Brand: Leiditech Package Type: SOT-23 Technical Specifications Symbol Parameter Condition Min Typ Max Unit VDS Drain

Product OverviewThe 8205A is a dual N-channel Power MOSFET featuring TrenchFET technology, offering excellent RDS(on), low gate charge, and high power and current handling capabilities. It is designed for surface mount applications and is suitable for battery protection, load switching, and power management.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolT

Product Overview The LM-MMBF170-7-F is an N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power MV MOSFET technology. Designed as a voltage-controlled small signal switch, it offers low input capacitance, fast switching speed, and low input/output leakage. This MOSFET is suitable for battery-operated systems, solid-state relays, and direct logic-level interface applications with TTL/CMOS. Product Attributes Brand: Leiditech Product Type: Enhancement Mode

Product Overview The PMV27UPEA is a P-Channel Enhancement Mode MOSFET designed with advanced trench technology. It offers excellent RDS(ON), low gate charge, and the capability to operate with gate voltages as low as 4.5V. This device is well-suited for battery protection and other switching applications, including load switching and uninterruptible power supplies. Product Attributes Brand: Leiditech Device Marking: PMV27UPEA Package: SOT-23 Reel Size: 180mm Tape Width: 8 mm

Product OverviewThe SI2312 is a 20V N-channel enhancement mode MOSFET designed for various electronic applications. It offers efficient switching characteristics and is suitable for power management tasks.Product AttributesProduct Marking: SI2312=A12Brand: YongyutaiOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsCharacteristicSymbolMinTypeMaxUnitNotesDrain-Source Breakdown VoltageBVDSS20--V(ID =250uA,VGS=0V

Product OverviewThe IXTA96P085T, IXTP96P085T, and IXTH96P085T are P-Channel Enhancement Mode TrenchPTM Power MOSFETs from IXYS, designed for high-performance applications. They feature an avalanche rating, extended FBSOA, fast intrinsic diode, and low RDS(ON) and QG, offering advantages like easy mounting, space savings, and high power density. These MOSFETs are suitable for high-side switching, push-pull amplifiers, DC choppers, automatic test equipment, current regulators,

Product OverviewThe AO4406A is a 30V/13A N-Channel MOSFET featuring advanced high cell density Trench technology for superior performance. It offers super low gate charge, excellent CdV/dt effect decline, and is available as a Green Device. This MOSFET is ideal for high-frequency point-of-load synchronous buck converters and networking DC-DC power systems, serving as a load switch.Product AttributesDevice Code: 4406AApplication: High Frequency Point-of-Load Synchronous Buck

Product Overview The LM5D40N10 is an N-Channel SGT MOSFET designed with advanced technology to deliver low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This device offers enhanced ruggedness, making it suitable for applications requiring improved durability. Key features include extremely low switching loss and excellent stability and uniformity. It is ideal for use in consumer electronic power supplies, motor control, and synchronous

Product OverviewThe AO6800 is a Dual N-Channel 30V Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the ability to operate at gate voltages as low as 2.5V. This makes it suitable for load switch and PWM applications.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitStatic

Product OverviewThis N-channel MOSFET offers low on-resistance and fast switching speeds, making it ideal for portable equipment due to its low voltage drive capability. It features easily designed drive circuits and is suitable for parallel configurations.Product AttributesMarking: KNType: Plastic-Encapsulated MOSFETTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitsMaximum RatingsVDS30VVGSS±20VID0.1APD0.2WTJ150°CTstg-55150°CRθJA625°/WElectrical Characteristi

Product OverviewThis document details the specifications for P-Channel Enhancement-Mode MOS FETs in a SOT-23 package. These transistors are designed for various electronic applications requiring efficient switching and control.Product AttributesBrand: KFDN360PTechnical SpecificationsCharacteristicSymbolMinTypMaxUnitNotesDrain-Source Breakdown VoltageBVDSS-30V(ID = -250uA,VGS=0V)Gate Threshold VoltageVGS(th)-1-3V(ID = -250uA,VGS= VDS)Diode Forward Voltage DropVSD-1V(IS= -1A

Product Overview The NVTR4503N is a 30V N-Channel Enhancement Mode MOSFET featuring advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for operation with gate voltages as low as 4.5V, making it suitable for battery protection and other switching applications. Key applications include lithium battery protection, wireless impact, and mobile phone fast charging. Product Attributes Brand: Leiditech Model: NVTR4503N Package Type: SOT-23 Origin: