Single FETs, MOSFETs
semiconductor device Leiditech SN7002W offering 1000V ESD protection RoHS compliant and halogen free
Product Overview The SN7002W is a semiconductor device designed for electronic applications. It offers ESD protection up to 1000V and complies with RoHS requirements and Halogen Free standards. This device is suitable for various applications requiring reliable performance and protection. Product ...
Avalanche Rated Rugged Power MOSFET Littelfuse IXTT20P50P Featuring PolarPTM Process and TO 268 Package
Product OverviewThe IXTT20P50P and IXTH20P50P are Avalanche Rated, Rugged PolarPTM Power MOSFETs from IXYS, designed for high-side switching, push-pull amplifiers, DC choppers, automatic test equipment, and current regulators. They offer advantages such as easy mounting, space savings, and high ...
N Channel Enhancement Mode MOSFET Littelfuse IXFN150N65X2 with low RDS on and high isolation voltage
Product OverviewThe IXFN150N65X2 is an N-Channel Enhancement Mode Power MOSFET from IXYS, featuring X2-Class HiPerFETTM technology. It offers high current handling capability, fast intrinsic diode, avalanche rating, and low RDS(on). Its miniBLOC package with Aluminium Nitride isolation provides a ...
P Channel Enhancement Mode MOSFET Leiditech STL12P6F6 with 50A Continuous Drain Current and 100V Voltage Rating
Product Overview The STL12P6F6 is a P-Channel Enhancement Mode MOSFET designed for various applications. It features a -100V Drain-Source Voltage and a continuous drain current of -50A at 25 (VGS @ -10V). This MOSFET offers robust performance with an absolute maximum rating for pulsed drain current ...
N Channel Enhancement Mode Power MOSFET Leiditech STL20N6F7 with 60V Drain Source Voltage and 20A Current
Product Overview The STL20N6F7 is an N-Channel Enhancement Mode Power MOSFET designed for various applications. It features a 60V drain-source voltage rating and a continuous drain current of 20A at 25. This MOSFET is housed in a compact DFN3*3-8L package, making it suitable for space-constrained ...
20V N Channel MOSFET Leiditech NVR4501N Featuring Low RDS ON and Suitable for Switching Applications
Product Overview The NVR4501N is a 20V N-Channel Enhancement Mode MOSFET designed with advanced trench technology, offering excellent RDS(ON) and low gate charge. It operates effectively with gate voltages as low as 2.5V, making it suitable for battery protection applications and other switching ...
Low RDS ON P Channel Super Enhancement Mode MOSFET Leiditech DMG2307LQ for Battery Protection Systems
Product Overview The DMG2307LQ is a P-Channel Super Enhancement Mode MOSFET designed with Trench Power LV MOSFET technology and a high-density cell design for low RDS(ON). It offers a VDS of -30V and an ID of 4.1A. Key features include low on-resistance at various gate-source voltages (-10V and -4...
Power mosfet Leiditech 2N7002NT designed for portable equipment and low voltage drive applications
Product Overview The 2N7002NT is an N-channel enhancement mode power MOSFET designed for low voltage drive applications, making it ideal for portable equipment and interfacing/switching tasks. It features low on-resistance, fast switching speed, and easily designed drive circuits, facilitating ...
LGE AO3401 P Channel MOSFET Offering High Power Dissipation and Low Gate Charge for PWM Applications
AO3401 P-Channel 30V(D-S) MOSFETThe AO3401 utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This device is ideal for load switch and PWM applications, offering high power and current handling capabilities...
N Channel 20V MOSFET Leiditech SQ2310ES Featuring Low Gate Charge for Battery Protection and Switching
Product Overview The SQ2310ES is a 20V N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, capable of operating with gate voltages as low as 2.5V. This device is well-suited for battery protection applications and other switching ...
SOT 23 Package MOSFET Leiditech Si2323CDS Featuring Low RDS ON and Suitable for Load Switching Applications
Product Overview The Si2323CDS is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is suitable for applications such as battery protection, load switching, and ...
N Channel MOSFET Littelfuse IXFP5N100P with avalanche rated diode and low drain to tab capacitance
Product OverviewThe IXFA5N100P, IXFH5N100P, and IXFP5N100P are PolarTM Power MOSFETs and HiPerFETTM N-Channel Enhancement Mode devices from IXYS, designed for high-speed power switching applications. These devices feature an avalanche-rated fast intrinsic diode, low RDS(ON) with a rugged PolarTM ...
High stability N Channel MOSFET Leiditech STL45N10F7AG ideal for inverter and switching applications
Product Overview This N-Channel MOSFET utilizes advanced SGT technology, offering low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. It is specifically designed for enhanced ruggedness and suitability in various inverter and synchronous-rectification applications. ...
Power MOSFET LGE LGE3M18120Q Silicon Carbide Device with 1200V Blocking Voltage and Ease of Parallel
LGE3M18120Q Silicon Carbide Power MOSFET The LGE3M18120Q is a Silicon Carbide Power MOSFET designed for high-performance applications. It offers high blocking voltage (1200V) and low on-resistance (18m at 25C) with fast intrinsic diode performance and low reverse recovery. This device is ideal for ...
N channel MOSFET Leiditech FDD3672 with trench technology providing switching and battery protection
Product Overview The FDD3672 is an enhancement mode, N-channel MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. This device is well-suited for battery protection and other switching applications, ...
Low on resistance smd power mosfet transistor LGE BSS123 designed for power management applications
BSS123 SMD Power MOSFET Transistor (N-Channel) The BSS123 is an N-Channel SMD Power MOSFET Transistor designed for various power management applications. It features low on-resistance, low input and output capacitance, a low threshold voltage, and fast switching speeds, making it suitable for DC-to...
Power Management Silicon P Channel MOSFET Lewa Micro LWS6080A23 with Low RDS ON and Halogen Free SOT 223 Package
Product OverviewThe LWS6080A23 is a Silicon P-Channel Power MOSFET utilizing advanced SGT technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including battery switching, hard switched and high frequency circuits, and power ...
N Channel Enhancement Mode Power MOSFET Littelfuse IXTP34N65X2 Avalanche Rated X2 Class Device
IXTP34N65X2 / IXTH34N65X2 N-Channel Enhancement Mode Power MOSFET This X2-Class Power MOSFET series, featuring the IXTP34N65X2 and IXTH34N65X2 models, offers international standard packages with low RDS(ON) and low gate charge (QG). Designed for high power density, these devices are avalanche rated ...
Power MOSFET KUU 30N06 60V 30A N Channel with Ultra Low RDS ON and High Junction Temperature Tolerance
Product OverviewThis 60V/30A N-Channel MOSFET features a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, and good stability and uniformity with high EAS. Its excellent package provides good heat dissipation, making it ideal for power switching ...
Small signal switch Leiditech LM LBSS139LT1G with 60V drain source voltage and low RDS ON resistance
Product Overview The LM-LBSS139LT1G is a voltage-controlled small-signal switch utilizing Trench Power MV MOSFET technology. It offers low input capacitance, fast switching speed, and low input/output leakage, making it suitable for battery-operated systems, solid-state relays, and direct logic...
