Single FETs, MOSFETs

Product OverviewThe IXTT20P50P and IXTH20P50P are Avalanche Rated, Rugged PolarPTM Power MOSFETs from IXYS, designed for high-side switching, push-pull amplifiers, DC choppers, automatic test equipment, and current regulators. They offer advantages such as easy mounting, space savings, and high power density, featuring international standard packages and low package inductance with a fast intrinsic diode.Product AttributesBrand: IXYSProcess: PolarPTMFeatures: Avalanche Rated,

Product OverviewThe IXFN150N65X2 is an N-Channel Enhancement Mode Power MOSFET from IXYS, featuring X2-Class HiPerFETTM technology. It offers high current handling capability, fast intrinsic diode, avalanche rating, and low RDS(on). Its miniBLOC package with Aluminium Nitride isolation provides a high isolation voltage of 2500 V~, making it suitable for high power density applications. This MOSFET is designed for switch-mode and resonant-mode power supplies, DC-DC converters,

Product Overview The STL12P6F6 is a P-Channel Enhancement Mode MOSFET designed for various applications. It features a -100V Drain-Source Voltage and a continuous drain current of -50A at 25 (VGS @ -10V). This MOSFET offers robust performance with an absolute maximum rating for pulsed drain current up to -150A and single pulse avalanche energy of 87 mJ. It is suitable for applications requiring high power dissipation, with a total power dissipation of 140W at 25. The device

Product Overview The STL20N6F7 is an N-Channel Enhancement Mode Power MOSFET designed for various applications. It features a 60V drain-source voltage rating and a continuous drain current of 20A at 25. This MOSFET is housed in a compact DFN3*3-8L package, making it suitable for space-constrained designs. Its robust electrical characteristics, including low on-state resistance and efficient switching performance, make it a reliable component for power management solutions.

Product Overview The NVR4501N is a 20V N-Channel Enhancement Mode MOSFET designed with advanced trench technology, offering excellent RDS(ON) and low gate charge. It operates effectively with gate voltages as low as 2.5V, making it suitable for battery protection applications and other switching scenarios. Key applications include lithium battery protection, wireless impact devices, and mobile phone fast charging. Product Attributes Brand: Leiditech Model: NVR4501N Package

Product Overview The DMG2307LQ is a P-Channel Super Enhancement Mode MOSFET designed with Trench Power LV MOSFET technology and a high-density cell design for low RDS(ON). It offers a VDS of -30V and an ID of 4.1A. Key features include low on-resistance at various gate-source voltages (-10V and -4.5V), making it suitable for applications such as battery protection, load switching, and power management. Product Attributes Technology: Trench Power LV MOSFET Mode: Super

Product Overview The 2N7002NT is an N-channel enhancement mode power MOSFET designed for low voltage drive applications, making it ideal for portable equipment and interfacing/switching tasks. It features low on-resistance, fast switching speed, and easily designed drive circuits, facilitating parallel configurations. This MOSFET is presented in an SOT-523 package. Product Attributes Brand: Leiditech Model: 2N7002NT Package Type: SOT-523 Technology: N-Channel Enhancement Mode

AO3401 P-Channel 30V(D-S) MOSFETThe AO3401 utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This device is ideal for load switch and PWM applications, offering high power and current handling capabilities.Product AttributesLead free productTechnical SpecificationsParameterSymbolConditionMinTypMaxUnitAbsolute Maximum Ratings (TA=25 unless otherwise noted)Drain-Source VoltageVDS-30VGate

Product Overview The SQ2310ES is a 20V N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, capable of operating with gate voltages as low as 2.5V. This device is well-suited for battery protection applications and other switching applications, including wireless impact and mobile phone fast charging. Product Attributes Brand: Leiditech Model: SQ2310ES Package Type: SOT-23 Technology: Advanced Trench

Product Overview The Si2323CDS is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is suitable for applications such as battery protection, load switching, and uninterruptible power supplies. Product Attributes Brand: Leiditech Model: Si2323CDS Package: SOT-23 Technology: Advanced Trench Technical Specifications Symbol Parameter Conditions Min.

Product OverviewThe IXFA5N100P, IXFH5N100P, and IXFP5N100P are PolarTM Power MOSFETs and HiPerFETTM N-Channel Enhancement Mode devices from IXYS, designed for high-speed power switching applications. These devices feature an avalanche-rated fast intrinsic diode, low RDS(ON) with a rugged PolarTM process, low QG, and low drain-to-tab capacitance. They are available in international standard packages, offering easy mounting and space savings.Product AttributesBrand: IXYSTechnol

Product Overview This N-Channel MOSFET utilizes advanced SGT technology, offering low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. It is specifically designed for enhanced ruggedness and suitability in various inverter and synchronous-rectification applications. Key advantages include extremely low switching loss and excellent stability and uniformity. Product Attributes Brand: Leiditech Technology: SGT MOSFET Channel Type: N-Channel

LGE3M18120Q Silicon Carbide Power MOSFET The LGE3M18120Q is a Silicon Carbide Power MOSFET designed for high-performance applications. It offers high blocking voltage (1200V) and low on-resistance (18m at 25C) with fast intrinsic diode performance and low reverse recovery. This device is ideal for applications requiring higher system efficiency, parallel device convenience without thermal runaway, and operation at high temperatures. It is well-suited for hard switching

Product Overview The FDD3672 is an enhancement mode, N-channel MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. This device is well-suited for battery protection and other switching applications, providing reliable performance and efficiency. Product Attributes Brand: Leiditech Product ID: FDD3672 Package: TO-252 Channel Type: N-Channel Mode: Enhancement Mode Revision: 2.0

BSS123 SMD Power MOSFET Transistor (N-Channel) The BSS123 is an N-Channel SMD Power MOSFET Transistor designed for various power management applications. It features low on-resistance, low input and output capacitance, a low threshold voltage, and fast switching speeds, making it suitable for DC-to-DC converters, cellular and PCMCIA cards, cordless telephones, and portable battery power management. Product Attributes Brand: Not specified Origin: Not specified Material:

Product OverviewThe LWS6080A23 is a Silicon P-Channel Power MOSFET utilizing advanced SGT technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including battery switching, hard switched and high frequency circuits, and power management. The device features low reverse transfer capacitances and is packaged in a ROHS standard and Halogen Free compliant SOT-223 package.Product AttributesBrand: LW-MicroOrigin

IXTP34N65X2 / IXTH34N65X2 N-Channel Enhancement Mode Power MOSFET This X2-Class Power MOSFET series, featuring the IXTP34N65X2 and IXTH34N65X2 models, offers international standard packages with low RDS(ON) and low gate charge (QG). Designed for high power density, these devices are avalanche rated and boast low package inductance, making them easy to mount and space-saving. They are ideal for applications such as switch-mode and resonant-mode power supplies, DC-DC converters

Product OverviewThis 60V/30A N-Channel MOSFET features a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, and good stability and uniformity with high EAS. Its excellent package provides good heat dissipation, making it ideal for power switching applications.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsSymbolParameterCo

Product Overview The LM-LBSS139LT1G is a voltage-controlled small-signal switch utilizing Trench Power MV MOSFET technology. It offers low input capacitance, fast switching speed, and low input/output leakage, making it suitable for battery-operated systems, solid-state relays, and direct logic-level interfacing with TTL/CMOS. This N-Channel Enhancement Mode Field Effect Transistor is designed for efficient operation with a 60V drain-source voltage rating and a maximum

Product OverviewThe 2N7002KW is an N-Channel Advanced Power MOSFET designed for various switching applications. It features low RDS(on) at 10V VGS, 5V logic level control, and is housed in a SOT323 package. This device offers ESD protection and is Pb-free and RoHS compliant, making it suitable for logic level translators, high-speed line drivers, low-side load switches, and general switching circuits.Product AttributesBrand: LGE SemiconductorPackage: SOT323Certifications: