Single FETs, MOSFETs

2SK3018 N-Channel MOSFETThe 2SK3018 is an N-Channel MOSFET designed for general-purpose applications. It offers a Drain-Source Voltage (VDS) of 30V and a Continuous Drain Current (ID) of 0.1A. Key features include low on-resistance (RDS(ON)) at various gate-source voltages, making it suitable for switching and amplification circuits.Product AttributesBrand: LG SEMIModel: 2SK3018Type: N-Channel MOSFETMarking: KNTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUni

Product Overview The LM-L2N7002LT1G is an N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power MV MOSFET technology. Designed as a voltage-controlled small signal switch, it offers low input capacitance, fast switching speed, and low input/output leakage. This device is ideal for battery-operated systems, solid-state relays, and applications requiring direct logic-level interface with TTL/CMOS. Product Attributes Brand: Leiditech Product Type: N-Channel

Product OverviewThe 2N7002DW is a dual N-channel MOSFET in a SOT-363 plastic-encapsulated package. It features a high-density cell design for low RDS(ON), making it suitable as a load switch for portable devices and a voltage-controlled small signal switch in DC/DC converters. This MOSFET is rugged, reliable, and offers high saturation current capability.Product AttributesBrand: LGE Semiconductor (implied by URL)Origin: Not specifiedMaterial: Plastic (encapsulated)Color: Not

Product DescriptionThe IXFK52N100X and IXFX52N100X are N-Channel Enhancement Mode Avalanche Rated X-Class HiPerFET Power MOSFETs designed for high-power density applications. They feature low QG, avalanche rating, and low package inductance, making them suitable for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives, robotics, and servo controls. Their advantages include easy mounting and space savings.Product AttributesBrand:

Product OverviewThe LGE03N06BF is a 60V N-Channel Enhancement Mode MOSFET featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This MOSFET is suitable for DC-DC converters and power management functions.Product AttributesBrand: LGProduct Type: N-Channel Enhancement Mode MOSFETTechnology: Trench Power MV MOSFETTechnical SpecificationsParameterSymbolConditionsMinTypMaxUnitDrain-Source Breakdown

Product Overview The AUIRFR540Z is an N-Channel Enhancement Mode MOSFET designed with advanced trench technology, offering excellent RDS(ON), low gate charge, and the capability to operate with gate voltages as low as 4.5V. This device is well-suited for battery protection and other switching applications, providing reliable performance in demanding environments. Product Attributes Brand: Leiditech Product ID: AUIRFR540Z Package: TO-252 Channel Type: N-Channel Mode:

Product Overview The LGE3M650170B is a Silicon Carbide Power MOSFET designed for high-performance applications. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitance, and is easy to parallel and simple to drive. Key benefits include higher system efficiency, reduced cooling requirements, increased system reliability, and the ability to operate at increased system switching frequencies. This device is suitable for auxiliary power

Product OverviewThe IXTY1R6N50D2, IXTA1R6N50D2, and IXTP1R6N50D2 are Depletion Mode N-Channel MOSFETs designed for applications requiring a normally ON mode. They offer advantages such as easy mounting, space savings, and high power density, making them suitable for audio amplifiers, start-up circuits, protection circuits, ramp generators, current regulators, and active loads. These devices come in international standard packages and feature molding epoxies that meet UL 94 V

Product Overview The LM3D65N06 is an N-Channel Enhancement Mode Power MOSFET designed for various power applications. It features a DFN3*3-8L package and offers a high continuous drain current capability. This MOSFET is suitable for applications requiring efficient power switching and management. Product Attributes Brand: Leiditech Model Series: AP65N06DF Product Code: LM3D65N06 Channel Type: N-Channel Mode: Enhancement Mode Package Type: DFN3*3-8L Origin: Shanghai Leiditech

Product Overview The NVR5198NL is a 60V N-Channel Enhancement Mode MOSFET designed with advanced trench technology. It offers excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications, including load switches and uninterruptible power supplies. Product Attributes Brand: Leiditech Model: NVR5198NL Package: SOT-23 Technology: Advanced Trench Technology Technical Specificat

Product OverviewThe LGE3404 is a 30V, 5A N-Channel Advanced Power MOSFET designed for efficient power management applications. It features low RDS(on) at VGS=10V and 10V logic-level control, making it suitable for DC-to-DC converters, power management, low-side load switching, switching circuits, and high-speed line drivers. The device comes in a Pb-free, RoHS-compliant SOT23 package.Product AttributesBrand: LGEChannel Type: N ChannelPackage: SOT23Compliance: PbFree, RoHS

Product Overview The AP65N06DF is a high-performance N-Channel Enhancement Mode Power MOSFET designed for various industrial applications. It features a DFN3*3-8L package, offering excellent thermal performance with a junction-to-case thermal resistance of 2.1 C/W. This MOSFET is built for robust operation, with a continuous drain current of 20 A at 25C and a pulsed drain current of up to 60 A. Its low on-state resistance (RDS(ON)) of 7.5 m at VGS=10 V and ID=20 A, along with

Product OverviewThe IXTA24N65X2, IXTP24N65X2, and IXTH24N65X2 are N-Channel Enhancement Mode Avalanche Rated X2-Class Power MOSFETs designed for high-density power applications. They offer low RDS(ON) and low QG, making them suitable for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives, robotics, and servo controls. Key advantages include high power density, ease of mounting, and space savings.Product AttributesBrand:

Product Overview The DMN6013LFGQ is an N-Channel Enhancement Mode Power MOSFET designed for various applications. It features a 60V drain-source voltage and a continuous drain current of up to 20A at 25C. This MOSFET is housed in a compact DFN3*3-8L package, offering efficient power dissipation and reliable performance. Product Attributes Brand: Leiditech Model: DMN6013LFGQ Package Type: DFN3*3-8L Channel Type: N-Channel Mode: Enhancement Mode Origin: Shanghai Leiditech

Product Overview The IRLML6346 is a 30V N-Channel Enhancement Mode MOSFET designed for efficient switching applications. It leverages advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This MOSFET is particularly suitable for battery protection in lithium-ion devices and other general switching applications, including wireless impact and mobile phone fast charging. Product Attributes Brand: Leiditech

Product Overview The PMV20XNEA is a 20V N-Channel Enhancement Mode MOSFET designed for high-performance switching applications. It leverages advanced trench technology to deliver excellent RDS(ON), low gate charge, and efficient operation with gate voltages as low as 2.5V. This device is ideally suited for battery protection in lithium-ion applications, wireless impact systems, and mobile phone fast charging solutions, providing reliable performance in demanding scenarios.

Product OverviewThe CPC3980 is an 800V, N-channel, depletion-mode, Field Effect Transistor (FET) utilizing IXYS Integrated Circuits Divisions proprietary vertical DMOS process. This robust device offers high input impedance and world-class high voltage MOSFET performance with an economical silicon gate architecture. Its FET structure prevents thermal runaway and thermal-induced secondary breakdown, making it ideal for high-power applications. The CPC3980 is a highly reliable

Product Overview This N-Channel Enhancement Mode Field Effect Transistor utilizes advanced SGT MOSFET technology to deliver low RDS(on), low gate charge, fast switching, and excellent avalanche characteristics. It is specifically designed for enhanced ruggedness and suitability in applications requiring superior stability and uniformity. Key benefits include extremely low switching loss and an excellent Figure of Merit (FOM). It is ideal for use in inverters, consumer

Product Overview The SOT-23 Field Effect Transistors are P-Channel, Enhancement-Mode, MOS FETs designed for various electronic applications. These transistors offer specific electrical characteristics and are housed in a compact SOT-23 package, suitable for integration into compact electronic designs. Product Attributes Package Type: SOT-23 Channel Type: P-Channel Mode: Enhancement-Mode Technology: MOS FETs Manufacturer: Shanghai Leiditech Electronic Co.,Ltd Model Number:

Product Overview The SN7002W is a semiconductor device designed for electronic applications. It offers ESD protection up to 1000V and complies with RoHS requirements and Halogen Free standards. This device is suitable for various applications requiring reliable performance and protection. Product Attributes Brand: Leiditech Model: SN7002W Package Type: SC70(SOT-323) Certifications: RoHS compliant, Halogen Free ESD Protection: 1000V Technical Specifications Parameter Symbol