Single FETs, MOSFETs

Product Overview The NTRV4101P is a 20V P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with operation possible at gate voltages as low as 2.5V. This device is well-suited for battery protection and other switching applications, including uninterruptible power supplies and load switches. Its key features include low gate charge and the ability to operate with low gate voltages, making it an efficient

Product OverviewThis N-Channel 30-V(D-S) MOSFET features TrenchFET Power MOSFET technology, offering low on-state resistance (RDS(on)MAX) of 65m@10V and 85m@4.5V, with a continuous drain current (ID) of 4A. It is designed for applications such as load switching in portable devices and DC/DC converters.Product AttributesBrand: SI2306Origin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest

Product Overview The DMP2123LQ is a 20V P-Channel Enhancement Mode MOSFET designed for applications requiring excellent RDS(ON), low gate charge, and operation with low gate voltages as low as 2.5V. It utilizes advanced trench technology to provide high performance. This device is suitable for battery protection, load switching, and uninterruptible power supply applications. Product Attributes Brand: Leiditech Device Marking: A1SHB Package: SOT-23 Reel Size: 180mm Tape Width:

Product OverviewThe AO4435 is a P-Channel MOSFET featuring Trench Power LV MOSFET technology with a high-density cell design for low RDS(ON). It offers high-speed switching capabilities and is suitable for applications such as battery protection, power management, and load switching.Product AttributesBrand: Yongyutai (implied by website URL)Device Code: 4435AMarking: 4435A XXXXTechnical SpecificationsParameterConditionMinTypMaxUnitAbsolute Maximum RatingsVDSDrain-Source

Product Overview The SE3401 is an Enhancement Mode P-Channel Power MOSFET utilizing Trench Power LV MOSFET technology with a high-density cell design for low RDS(ON). It is designed for applications such as battery protection, load switching, and power management, offering high-speed switching capabilities. Product Attributes Brand: Leiditech Product Type: Enhancement Mode Power MOSFET Channel Type: P-Channel Technology: Trench Power LV MOSFET Technical Specifications

Product OverviewThe 4410 is an N-channel enhancement mode power MOSFET featuring advanced high cell density Trench technology and a low resistance package, resulting in extremely low RDS(ON). This design minimizes conductive loss and offers fast switching due to low gate charge. It is ideal for load switch and battery protection applications, particularly in power management for notebook computers, portable equipment, and battery-powered systems.Product AttributesBrand: Not

Product Overview The PMV19XNEA is a 30V N-Channel Enhancement Mode MOSFET designed using advanced trench technology. It offers excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This device is highly suitable for battery protection and other switching applications, including lithium battery protection, wireless impact, and mobile phone fast charging. Product Attributes Brand: Leiditech Model: PMV19XNEA Package Type: SOT-23 Technical

Product OverviewThe LGE3M14120Q is a high-performance Silicon Carbide Power MOSFET designed for demanding applications. It offers high-speed switching, very low switching losses, and high blocking voltage with low on-resistance. This device is ideal for improving system efficiency, reducing cooling requirements, and enabling increased power density and system switching frequency in applications such as EV motor drives, PV string inverters, solar power optimizers, and switch

Product OverviewThe 2N7002 is an N-Channel MOSFET designed for low RDS(ON) voltage-controlled small signal switching applications. It features a high-density cell design, rugged and reliable construction, and high saturation current capability.Product AttributesBrand: LGEModel: 2N7002Type: Mosfet (N-Channel)Package: SOT-23Website: http://www.lgesemi.comEmail: lge@lgesemi.comRevision: 20170701-P1Technical SpecificationsParameterSymbolTest ConditionsMINTYPMAXUnitsDrain-Source

Product Overview The IRLML0030 is a 30V N-Channel Enhancement Mode MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. This device is ideal for battery protection and other switching applications, including lithium battery protection, wireless impact, and mobile phone fast charging. Product Attributes Brand: Leiditech Model: IRLML0030 Technology: Advanced Trench Technology

Product Overview The STD47N10F7AG is an N-Channel Enhancement Mode MOSFET engineered with advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate at gate voltages as low as 4.5V. This device is ideally suited for battery protection and other switching applications. Its key features include a VDS of 100V, a continuous ID of 50A, and an RDS(ON) of less than 28m at VGS=10V. Product Attributes Brand: Leiditech Product ID:

Product Overview The DMG2302UQ is a 20V N-Channel Enhancement Mode MOSFET manufactured using advanced trench technology. It offers excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. This device is suitable for applications such as lithium battery protection, wireless impact, and mobile phone fast charging, as well as other switching applications. Product Attributes Brand: Leiditech Model: DMG2302UQ Technology: N-Channel Enhancement Mode

Product Overview The LMAK50N10 is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate at gate voltages as low as 4.5V. This device is well-suited for battery protection and other switching applications. Its key features include a VDS of 100V, an ID of 50A, and an RDS(ON) of less than 28m at VGS=10V. Applications include battery protection, load switching, and uninterruptible

Product OverviewN-Channel Enhancement Mode MOSFET featuring low on-resistance (RDS(ON)) at various gate-source voltages. Designed for electrostatic sensitive devices, it offers robust performance with a maximum continuous drain current of 5.7A and a breakdown voltage of 30V. Packaged in a compact SOT-23 case, it is suitable for a wide range of electronic applications.Product AttributesElectrostatic sensitive devicesMolding Compound: UL Flammability Classification Rating 94V

Product Overview The LM2301C is a P-Channel Enhancement Mode MOSFET designed with advanced trench technology, offering excellent RDS(ON) and low gate charge. It is capable of operating with gate voltages as low as 2.5V, making it suitable for battery protection, load switching, and uninterruptible power supply applications. Its key features include a VDS of -20V and a continuous drain current (ID) of -2.3A. Product Attributes Brand: Leiditech Model: LM2301C Package Type: SOT

Product Overview The SOT-23 Field Effect Transistors are P-Channel Enhancement-Mode MOS FETs designed for various electronic applications. These devices offer reliable performance with specific electrical characteristics and maximum ratings suitable for integration into compact designs. The LM2309 model is identified by the marking 'LM2309=E1'. Product Attributes Brand: Leiditech Package Type: SOT-23 Channel Type: P-Channel Mode: Enhancement-Mode Technology: MOS FETs Device

Product Overview The STR2N2VH5 is a 20V N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 2.5V. This device is well-suited for battery protection applications and other switching applications, including wireless impact and mobile phone fast charging. Product Attributes Brand: Leiditech Model: STR2N2VH5 Technology: Advanced Trench Technology Package Type: SOT-23

Product OverviewThe IXFH12N100P, IXFV12N100P, and IXFV12N100PS are N-Channel Enhancement Mode Power MOSFETs featuring low RDS(on) and QG, avalanche rating, and low package inductance. These PolarTM HiPerFETTM devices offer high power density, easy mounting, and space savings, making them suitable for switch-mode and resonant-mode power supplies, DC-DC converters, laser drivers, AC/DC motor drives, and robotics.Product AttributesBrand: IXYSOrigin: USA (implied by patents and

Product Overview The LM-MMBF170 is an N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power MV MOSFET technology. Designed as a voltage-controlled small signal switch, it offers low input capacitance, fast switching speed, and low input/output leakage. Its key specifications include a VDS of 60V and a continuous drain current (ID) of 340mA at 25. This MOSFET is suitable for battery-operated systems, solid-state relays, and direct logic-level interfacing

Product Overview The SE2312 is a 20V N-Channel Enhancement Mode MOSFET that utilizes advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This device is well-suited for battery protection and other switching applications, including lithium battery protection, wireless impact, and mobile phone fast charging. Product Attributes Brand: Leiditech Model: SE2312 Package Type: SOT-23 Device Marking: AE9T