Single FETs, MOSFETs
N Channel Enhancement Mode MOSFET Leiditech NVTR4503N 30V for Battery Protection and Wireless Impact
Product Overview The NVTR4503N is a 30V N-Channel Enhancement Mode MOSFET featuring advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for operation with gate voltages as low as 4.5V, making it suitable for battery protection and other switching applications. Key ...
battery protection and switching using Leiditech NTRV4101P P Channel Enhancement Mode MOSFET device
Product Overview The NTRV4101P is a 20V P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with operation possible at gate voltages as low as 2.5V. This device is well-suited for battery protection and other switching applications...
High Current N Channel MOSFET KUU SI2306 with 30 Volt Drain Source Voltage and Low Thermal Resistance
Product OverviewThis N-Channel 30-V(D-S) MOSFET features TrenchFET Power MOSFET technology, offering low on-state resistance (RDS(on)MAX) of 65m@10V and 85m@4.5V, with a continuous drain current (ID) of 4A. It is designed for applications such as load switching in portable devices and DC/DC ...
20V P Channel MOSFET Leiditech DMP2123LQ optimized for low gate charge and operation in power management
Product Overview The DMP2123LQ is a 20V P-Channel Enhancement Mode MOSFET designed for applications requiring excellent RDS(ON), low gate charge, and operation with low gate voltages as low as 2.5V. It utilizes advanced trench technology to provide high performance. This device is suitable for ...
Power Management P Channel MOSFET KUU AO4435 with High Speed Switching and Low RDS ON Characteristics
Product OverviewThe AO4435 is a P-Channel MOSFET featuring Trench Power LV MOSFET technology with a high-density cell design for low RDS(ON). It offers high-speed switching capabilities and is suitable for applications such as battery protection, power management, and load switching.Product ...
Power MOSFET KUU 4410 featuring low RDS ON and low gate charge for portable equipment power solutions
Product OverviewThe 4410 is an N-channel enhancement mode power MOSFET featuring advanced high cell density Trench technology and a low resistance package, resulting in extremely low RDS(ON). This design minimizes conductive loss and offers fast switching due to low gate charge. It is ideal for load ...
Trench Power LV MOSFET Technology in Leiditech SE3401 P Channel Enhancement Mode Power MOSFET for Switching
Product Overview The SE3401 is an Enhancement Mode P-Channel Power MOSFET utilizing Trench Power LV MOSFET technology with a high-density cell design for low RDS(ON). It is designed for applications such as battery protection, load switching, and power management, offering high-speed switching ...
switching and battery protection with Leiditech PMV19XNEA 30V N Channel MOSFET low gate charge device
Product Overview The PMV19XNEA is a 30V N-Channel Enhancement Mode MOSFET designed using advanced trench technology. It offers excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This device is highly suitable for battery protection and other switching applications, ...
Silicon Carbide Power MOSFET LGE LGE3M14120Q Designed for Solar Power Optimizers and EV Motor Drives
Product OverviewThe LGE3M14120Q is a high-performance Silicon Carbide Power MOSFET designed for demanding applications. It offers high-speed switching, very low switching losses, and high blocking voltage with low on-resistance. This device is ideal for improving system efficiency, reducing cooling ...
Voltage Controlled N Channel Mosfet LGE 2N7002 with Low Gate Body Leakage in Compact SOT 23 Package
Product OverviewThe 2N7002 is an N-Channel MOSFET designed for low RDS(ON) voltage-controlled small signal switching applications. It features a high-density cell design, rugged and reliable construction, and high saturation current capability.Product AttributesBrand: LGEModel: 2N7002Type: Mosfet (N...
30V N Channel MOSFET Leiditech IRLML0030 Featuring Low Gate Voltage and Trench Technology for Switching
Product Overview The IRLML0030 is a 30V N-Channel Enhancement Mode MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. This device is ideal for battery protection and other switching applications, ...
N Channel Enhancement Mode MOSFET with 28 Milliohm RDS ON at 10V Gate Voltage Leiditech STD47N10F7AG
Product Overview The STD47N10F7AG is an N-Channel Enhancement Mode MOSFET engineered with advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate at gate voltages as low as 4.5V. This device is ideally suited for battery protection and other ...
Low gate charge 20V MOSFET Leiditech DMG2302UQ N channel enhancement mode for power switching devices
Product Overview The DMG2302UQ is a 20V N-Channel Enhancement Mode MOSFET manufactured using advanced trench technology. It offers excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. This device is suitable for applications such as lithium battery protection, ...
50A Continuous Drain Current N Channel MOSFET Leiditech LMAK50N10 with Low Gate Charge and 100V VDS
Product Overview The LMAK50N10 is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate at gate voltages as low as 4.5V. This device is well-suited for battery protection and other switching ...
N Channel Enhancement Mode MOSFET KUU AO3400 with Low On Resistance and 30V VDSS in Small SOT 23 Package
Product OverviewN-Channel Enhancement Mode MOSFET featuring low on-resistance (RDS(ON)) at various gate-source voltages. Designed for electrostatic sensitive devices, it offers robust performance with a maximum continuous drain current of 5.7A and a breakdown voltage of 30V. Packaged in a compact ...
SOT 23 Package P Channel MOSFET Leiditech LM2301C Featuring Low Gate Voltage Operation and Load Switching
Product Overview The LM2301C is a P-Channel Enhancement Mode MOSFET designed with advanced trench technology, offering excellent RDS(ON) and low gate charge. It is capable of operating with gate voltages as low as 2.5V, making it suitable for battery protection, load switching, and uninterruptible ...
SOT 23 Package P Channel Enhancement Mode MOSFET Leiditech LM2309 for Electronic Device Integration
Product Overview The SOT-23 Field Effect Transistors are P-Channel Enhancement-Mode MOS FETs designed for various electronic applications. These devices offer reliable performance with specific electrical characteristics and maximum ratings suitable for integration into compact designs. The LM2309 ...
N Channel 20V MOSFET Leiditech STR2N2VH5 Featuring Low Gate Charge and Trench Technology for Switching Devices
Product Overview The STR2N2VH5 is a 20V N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 2.5V. This device is well-suited for battery protection applications and other switching ...
IXFH12N100P Power MOSFET Offering Low RDSon and High Avalanche Rating for Switch Mode Power Supplies
Product OverviewThe IXFH12N100P, IXFV12N100P, and IXFV12N100PS are N-Channel Enhancement Mode Power MOSFETs featuring low RDS(on) and QG, avalanche rating, and low package inductance. These PolarTM HiPerFETTM devices offer high power density, easy mounting, and space savings, making them suitable ...
Trench Power MV MOSFET N Channel Enhancement Mode Device Leiditech LM MMBF170 with Low Leakage Current
Product Overview The LM-MMBF170 is an N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power MV MOSFET technology. Designed as a voltage-controlled small signal switch, it offers low input capacitance, fast switching speed, and low input/output leakage. Its key specifications ...
