Single FETs, MOSFETs
Low RDS ON P Channel Power MOSFET JSCJ CJAB55P03A suitable for high current switching applications
Product OverviewThe CJAB55P03A is a P-Channel Power MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Its high-density cell design ensures ultra-low RDS(ON), and it is fully characterized for avalanche voltage and current. The package offers good heat dissipation and special process technology provides high ESD capability. This MOSFET is suitable for battery and loading switching applications.Product AttributesBrand: JIANGSU CHANGJING
Low On Resistance P Channel MOSFET JSCJ CJ2309A Designed for Bi Directional Load Switch Applications
Product OverviewThe CJ2309A is a P-Channel Enhancement Mode Field Effect Transistor utilizing advanced trench technology for excellent RDS(on). It is suitable for use as a uni-directional or bi-directional load switch.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDDevice Code: CJ2309APackage: SOT-23Technical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-source breakdown voltageV(BR)DSSVGS = 0V, ID =-250A-60VZero gate voltage drain
Power MOSFET JSCJ CJA9451 P Channel type with fast switching speed and low gate body leakage current
Product OverviewThe CJA9451 is an advanced P-Channel MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed for optimal performance in power applications. It offers a superior combination of fast switching speeds, robust device design, ultra-low on-resistance, and cost-effectiveness, making it an ideal choice for various electronic designs.Product AttributesBrand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDPackage: SOT-89-3LMaterial: Plastic
power management JSCJ CJCD2004 Dual N Channel MOSFET with low gate charge and ESD protection features
Product OverviewThe CJCD2004 is a Dual N-Channel MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It features ESD protection and is suitable for use as a uni-directional or bi-directional load switch due to its common-drain configuration.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDModel: CJCD2004Package: DFNWB23-6L-CMaterial: Plastic-EncapsulateMarking:
Low gate charge N Channel MOSFET JSCJ CJA03N10S with excellent heat dissipation in SOT 89 3L package
Product OverviewThe CJA03N10S is an N-Channel MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Its design offers high ESD capability, high density cell for ultra-low RDS(on), and good stability with high EAS. The SOT-89-3L package provides excellent heat dissipation, making it suitable for power switching applications, hard switching and high frequency circuits, and uninterruptible
N Channel MOSFET JSCJ BSS123 Featuring Rugged Design and Low RDS ON for Power Switching Applications
Product OverviewThe JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD BSS123 is an N-Channel MOSFET in a SOT-23 package. It features a high-density cell design for extremely low RDS(ON), making it a voltage-controlled small signal switch that is rugged and reliable. This MOSFET is suitable for applications such as small servo motor controls, power MOSFET gate drivers, and general switching applications.Product AttributesBrand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,
Power MOSFET JSCJ CJAC110SN10L Featuring Ultra Low RDS ON and High Energy Avalanche Capability EAS
Product OverviewThe CJAC110SN10L is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing shielded gate trench technology for excellent RDS(ON) and low gate charge. It offers high power and current handling capability, high density cell design for ultra-low RDS(ON), good stability with high EAS, and an excellent package for heat dissipation. This MOSFET is suitable for SMPS, general purpose applications, hard switched and high frequency
JSMSEMI AM20N06 90D T1 PF JSM 60V N Channel MOSFET designed for power switching and heat dissipation
Product OverviewThe AM20N06-90D-T1-PF is a 60V N-Channel MOSFET utilizing advanced trench technology and design. It offers excellent RDS(on) with low gate charge, making it suitable for a wide variety of applications. Key features include low gate charge, advanced high cell density trench technology for ultra RDS(ON), and an excellent package for good heat dissipation. A green device option is available.Product AttributesBrand: JSMICRO SemiconductorModel: AM20N06-90D-T1
Power Field Effect Transistor JSCJ CJAC200SN04U Featuring SGT Technology and Low On State Resistance
Product DescriptionThe CJAC200SN04U is an N-Channel enhancement mode power field-effect transistor utilizing SGT technology. This advanced technology is engineered to minimize on-state resistance, provide superior switching performance, and offer robust protection against high energy pulses in avalanche and commutation modes. These characteristics make the device ideal for high-efficiency, fast-switching applications.Product AttributesPart Number: CJAC200SN04UBrand: JIANGSU
High Voltage N Channel MOSFET JSCJ CJPF12N65 Suitable for Power Converters and Motor Control Systems
Product OverviewThe CJPF12N65 is an advanced high voltage N-Channel Power MOSFET designed for efficient switching in high-speed applications. It offers high current capability, low on-resistance, and fast switching characteristics, along with specified avalanche energy and a fast-recovery drain-to-source diode. This MOSFET is ideal for power supplies, converters, power motor controls, and bridge circuits.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO.,
DFN1006 3L Package N Channel MOSFET JSCJ CJBA7002K Ideal for Portable Applications and Load Switching
Product OverviewThe JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD CJBA7002K is an N-Channel MOSFET in a DFN1006-3L package. It features low on-resistance, low threshold voltage, and fast switching speed, with an ESD protected gate. This MOSFET is suitable for load switching, portable applications, and power management functions.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDModel: CJBA7002KPackage: DFN1006-3LMaterial: Plastic-EncapsulateOrigin:
Lead Free Surface Mount P Channel MOSFET JSCJ CJAA3139K WBFBP 03E Package for Load and Power Switching
Product OverviewThe CJAA3139K is a P-Channel MOSFET featuring a WBFBP-03E package. It is a lead-free product designed for surface mounting, offering low RDS(on) and operation at low logic level gate drive. This ESD-protected device is complementary to the CJAA3134K and is suitable for various load/power switching, interfacing, battery management in ultra-small portable electronics, and logic level shifting applications.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS
Plastic Encapsulated N Channel MOSFET JSCJ CJK8804 with ESD Protection and Load Switching Performance
Product OverviewThe CJK8804 is an N-Channel Enhancement Mode Field Effect Transistor from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. It features a high-density cell design for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability. This MOSFET is ESD protected and suitable for load/power switching and interfacing switching applications.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDMaterial: Plastic-Encapsulate
Surface Mount P Channel Power MOSFET JSCJ CJQ4435A with Low RDS ON and Advanced Trench Technology
Product DescriptionThe CJQ4435A is a P-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide variety of applications. Key advantages include a Super High Density Cell Design for extremely low RDS(ON) and a surface mount package.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.Device Code: CJQ4435AEquivalent Circuit Code: Q4435AMarking: Q4435A XX (XX = Code
Voltage Controlled Small Signal Switching N Channel MOSFET JSCJ 2N7002T with High Saturation Current
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD - 2N7002T MOSFET (N-Channel) The 2N7002T is an N-Channel MOSFET in a SOT-523 package, designed for voltage-controlled small signal switching applications. It features a high-density cell design for low RDS(ON), is rugged and reliable, and offers high saturation current capability. Ideal for load switching in portable devices and DC/DC converters. Product Attributes Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Plastic Encapsulate N Channel MOSFET JSCJ CJM2004 with TrenchFET Technology and DFNWB2x2 6L J Package
Product Overview The CJM2004 is an N-Channel MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, featuring TrenchFET technology for excellent RDS(on), low gate charge, and high power/current handling capability. Packaged in a surface-mount DFNWB2x2-6L-J, it is ideal for battery protection, load switching, and power management applications. Product Attributes Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD Model: CJM2004 Package: DFNWB2x2-6L-J Material:
N Channel Power MOSFET JSCJ CJAB35N03 with Excellent Heat Dissipation and Low Gate Threshold Voltage
Product OverviewThe CJAB35N03 is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for high-side switching in POL DC/DC converters and secondary-side synchronous rectification. Key features include a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, good stability, excellent heat dissipation, and high ESD capability.Product AttributesBrand:
N Channel MOSFET JSCJ CJ2102 Load Switching Device for Portable Electronics and DC DC Converters
Product OverviewThe CJ2102 is an N-Channel MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed for load switching in portable devices and DC/DC converters. It features TrenchFET Power MOSFET technology for enhanced performance.Product AttributesBrand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDMaterial: Plastic-EncapsulatePackage: SOT-323Origin: China (implied by manufacturer name)Technical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitMa
Low Gate Charge N Channel Power MOSFET JSCJ CJAC10H02 Designed for General Purpose and Power Switching Circuits
Product OverviewThe CJAC10H02 is an N-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including SMPS, general purpose, hard switched and high frequency circuits, power switching, and uninterruptible power supplies. Key features include high density cell design for ultra low RDS(ON), fully characterized avalanche voltage and current, good stability and
High Current N Channel Power MOSFET JSCJ CJAC130SN06L with Low Gate Charge and Shielded Gate Trench Design
Product OverviewThe CJAC130SN06L is a N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing shielded gate trench technology. It is designed to offer excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications requiring high power and current handling capabilities, such as SMPS, general purpose applications, hard switched and high frequency circuits, Uninterruptible Power Supply, and power management. Its high
