Single FETs, MOSFETs

Product Overview The CJU15SN10 is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. Utilizing advanced trench technology, it offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of power switching applications. Key features include an excellent package for heat dissipation, ultra-low gate charge, low reverse transfer capacitance, fast switching capability, and specified avalanche energy. Product Attributes Brand:

Product Overview The CJ2312 is a N-Channel 20-V(D-S) MOSFET in a SOT-23 package, designed for DC/DC converters and load switching in portable applications. It offers efficient power handling with a maximum power dissipation of 0.35 W and a junction temperature up to 150C. Product Attributes Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Package: SOT-23 Marking: S12 Origin: China (implied by manufacturer location) Material: Plastic-Encapsulate Color: Not specified

Product OverviewThe CJQ4824 is a dual N-Channel MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for use as a load switch or in PWM applications.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDMaterial: Plastic-EncapsulateColor: Green molding compound device (if solid dot marking is present)Technical SpecificationsParameterSymbolTest

Product OverviewThe JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD Dual N-Channel MOSFET (CJS2016) is a high-performance power MOSFET designed for surface mount applications. It features TrenchFET technology, offering excellent RDS(on), low gate charge, and high power and current handling capabilities. This MOSFET is ideal for battery protection, load switching, and power management solutions.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDOrigin:

Product OverviewThe CJ1012 is a Single N-Channel Power MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed using an advanced Power Trench process to optimize RDS(ON). This MOSFET offers high-side switching, low on-resistance, low threshold voltage, and fast switching speed, making it suitable for various driver and power switching applications in battery-operated systems and power supply converters. It also features ESD protection.Product AttributesBrand:

Product OverviewThe CJMP3009 is a P-Channel Enhancement Mode Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(on) with low gate charge, making it suitable for load switch and PWM applications.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDProduct Code: CJMP3009Package: DFNWB2x2-6L-JMarking: P3009Technical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-Source Breakdown VoltageBVDSSVGS = 0V, ID =

Product Description This advanced high voltage N-Channel Power MOSFET is designed for high energy applications in avalanche mode and efficient switching. It features a fast recovery time for its drain-to-source diode. Ideal for high voltage, high-speed switching applications such as power supplies, converters, power motor controls, and bridge circuits. Its high density cell design ensures ultra low RDS(on), and it is fully characterized for avalanche voltage and current,

Product DescriptionThe CJND2004 is a Dual N-Channel MOSFET utilizing advanced trench technology, offering excellent RDS(ON) and low gate charge. It features ESD protection and is suitable for use as a uni-directional or bi-directional load switch due to its common-drain configuration.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDMaterial: Plastic-EncapsulatedModel: CJND2004Package Type: DFNWB2x5-6L-CTechnical SpecificationsParameterSymbolTest

Product OverviewThe CJT03P10 is a P-Channel Power MOSFET utilizing advanced trench technology for superior RDS(ON) and low gate charge. Its high-density cell design ensures ultra-low RDS(ON) and it is fully characterized for avalanche voltage and current. The SOT-223 package provides excellent heat dissipation, making it suitable for a wide range of applications.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.Device Code: CJT03P10Package Type: SOT

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFN1006-3L-A Plastic-Encapsulate MOSFETs CJBB3139K P-Channel MOSFETThe CJBB3139K is a P-Channel MOSFET in a DFN1006-3L-A package, designed for surface mounting. It features low RDS(on), operates at low logic level gate drive, and includes ESD protection on the gate. This product is lead-free and suitable for load/power switching, interfacing switching, battery management for ultra-small portable electronics, and logic level

Product OverviewThe CJAB3R9SN04C is an N-Channel enhancement mode power field-effect transistor utilizing SGT technology. This advanced technology is optimized for minimal on-state resistance, superior switching performance, and robust high-energy pulse handling in avalanche and commutation modes. It is well-suited for high-efficiency, fast-switching applications.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDPart Number: CJAB3R9SN04CMarking:

Product OverviewThe FDS4675-NL is a -40V P-Channel Enhancement Mode MOSFET designed for reliable and rugged performance. It features low on-state resistance, with RDS(ON) of 13m (typ.) at VGS=-10V and 18m (typ.) at VGS=-4.5V. This device is suitable for power management applications, particularly in LCD TV inverters. Lead-free and green device options are available, complying with RoHS standards.Product AttributesBrand: JSMICRO SemiconductorCertifications: RoHS Compliant

Product OverviewThe CJU04N65 is an N-channel mode power MOSFET utilizing advanced planar stripe technology. This design ensures minimal on-state resistance and superior switching performance, with the capability to withstand high energy pulses in avalanche and commutation modes. It is ideal for high-efficiency switch mode power supplies and other power switching applications, including DC/DC converters.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO.,

Product OverviewThe CJL8820 is a dual N-Channel MOSFET utilizing advanced trench technology, offering excellent RDS(ON) and low gate charge. It features ESD protection and is suitable for uni-directional or bi-directional load switch applications due to its common-drain configuration. This device is packaged in a SOT-23-6L plastic encapsulation.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDOrigin: China (implied by brand and website)Material:

Product OverviewThe CJL2322 is a Dual N-Channel TrenchFET Power MOSFET designed for efficient power management. It features low gate charge and low on-resistance, making it suitable for DC/DC converters, load switches in portable devices, and various commercial and industrial applications. The device comes in a surface mount SOT-23-6L package.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDMarking: S22 (Device code), XX (Date Code)Molding Compound:

Product OverviewThe CJS2013 is a Dual N-Channel MOSFET featuring TrenchFET technology, offering excellent RDS(on), low gate charge, and high power and current handling capabilities in a surface mount package. It is suitable for applications such as battery protection, load switching, and power management.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDPackage: TSSOP8Marking: S2013Technical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain

Product OverviewThe CJBA3541K is an N-Channel MOSFET in a DFN1006-3L surface mount package. It features low RDS(on), operates at low logic level gate drive, and includes ESD protection for the gate. This lead-free product is designed for load/power switching, interfacing switching, battery management in ultra-small portable electronics, and logic level shifting.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDProduct Code: CJBA3541KPackage: DFN1006

Product OverviewThe CJ3139KW is a P-Channel Power MOSFET designed using an advanced Power Trench process to optimize RDS(ON). It features high-side switching, low on-resistance, low threshold voltage, and fast switching speed, making it suitable for various driver applications, battery-operated systems, power supply converter circuits, and load/power switching in portable devices.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDOrigin: ChinaMaterial:

Product DescriptionThe JSM2050 is an N-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This high power and current handling capability makes it suitable for applications such as battery switches, load switches, and power management.Product AttributesBrand: JSMICRO SemiconductorCertifications: Lead free product is acquiredTechnical SpecificationsParamete

Product OverviewThis P-Channel MOSFET utilizes advanced trench technology and design to achieve excellent RDS(on) with low gate charge. It is suitable for a wide range of applications due to its advanced high cell density trench technology for ultra RDS(ON) and excellent package for good heat dissipation. A green device option is available.Product AttributesBrand: JSMICRO SemiconductorModel: AO4435Green Device: AvailableTechnical SpecificationsSymbolParameterConditionsMinTypM