Single FETs, MOSFETs

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3400AH N-Channel Enhancement Mode Field Effect Transistor The CJK3400AH is an N-Channel Enhancement Mode Field Effect Transistor designed with a high-density cell structure for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability. It is suitable for load/power switching and interfacing switching applications. Product Attributes Brand: JIANGSU CHANGJING

Product OverviewThe CJ4459 is a P-Channel MOSFET designed with advanced trench technology and a low-resistance package, offering extremely low RDS(ON). It is ideal for load switch and battery protection applications.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDDevice Code: 4459Molding Compound: Green (if solid dot present)Package Type: SOT-23Technical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitMAXIMUM RATINGSDrain-Source VoltageVDS

Product OverviewThe AO3400A is an N-Channel 30-V(D-S) MOSFET designed for load switching in portable devices and DC/DC converters. It features TrenchFET Power MOSFET technology and is available in a lead-free, surface-mount SOT-23 package.Product AttributesBrand: JSMICRO SemiconductorProduct Code: AO3400APackage: SOT-23, SOT-23-3LCertifications: Lead free product is acquiredTechnical SpecificationsParameterSymbolConditionsMinTypMaxUnitsAbsolute Maximum RatingsGate-Source

Product OverviewThis P-Channel MOSFET is designed for load/power switching and interfacing applications. It features low RDS(on), operates at low logic level gate drive, and comes in a surface mount package. It is a lead-free product, suitable for battery management in ultra-small portable electronics.Product AttributesLead Free ProductSurface Mount PackageP-Channel SwitchTechnical SpecificationsParameterSymbolConditionMinTypMaxUnitDrain-Source VoltageVDS-20VGate-Source

Product OverviewThe CJQ14SN06 is an N-Channel Power MOSFET utilizing shielded gate trench technology. It is designed to offer excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications. This device is ideal for use as a high-side switch in SMPS and as a load switch.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDDevice Code: Q14SN06Material: Plastic-Encapsulate MOSFETSColor: Green molding compound (if solid dot

Product OverviewThe CJQ4407A is a P-Channel Power MOSFET utilizing advanced trench technology and design to achieve excellent RDS(ON) with low gate charge. This device is suitable for a wide variety of applications, offering super high density cell design for extremely low RDS(ON) in a surface mount package.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.Device Code: CJQ4407AEquivalent Device Code: Q4407APackage: SOP8 Plastic-EncapsulateOrigin:

Product Overview The 2N7002V is a dual N-channel MOSFET in a SOT-563 package, designed for applications requiring low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speeds. It is suitable for load switching in portable devices and DC/DC converters. Product Attributes Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD Origin: China (implied by brand) Material: Plastic-Encapsulate (MOSFET), Polycarbonate resin (carrier tape),

Product OverviewThe CJQ4953 is a P-Channel MOSFET designed for various applications. It features a Super High Density Cell Design for extremely low RDS(ON), offering high efficiency and performance. This device is available in an SOP8 package.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDDevice Code: Q4953Package: SOP8Marking: Q4953Molding Compound: Green molding compound device (if solid dot present)Pin 1 Indicator: Solid dotTechnical Specificatio

Product OverviewThe CJU02N60 is an N-channel mode power MOSFET utilizing advanced planar stripe technology. This MOSFET offers a minimum on-state resistance and superior switching performance, making it suitable for high-efficiency switch mode power supplies. It is designed to withstand high energy pulses in avalanche and commutation modes, featuring excellent heat dissipation and high switching speed. The device is 100% avalanche tested and is universally applied in power

Product OverviewThe CJAC13TH06 is a Plastic-Encapsulated N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing shielded gate trench technology for excellent RDS(ON) and low gate charge. It offers high power and current handling capability, high density cell design for ultra-low RDS(ON), and good heat dissipation, making it suitable for a wide variety of applications including SMPS, general purpose applications, hard switched and high

Product OverviewThe CJL3407 is a P-Channel Enhancement Mode Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(on) with low gate charge, making it suitable for load switch and PWM applications.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDMarking: R7Technical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-source breakdown voltageV(BR)DSSVGS = 0V, ID =-250A-30VZero gate voltage drain currentIDSSVDS =

Product OverviewThe CJAC10TH10 is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing shielded gate trench technology for excellent RDS(ON) and low gate charge. This design enables high efficiency in power supply applications and is suitable for use as a secondary synchronous rectifier.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDPart Number: CJAC10TH10Package: PQFNWB56-8LMarking: CJAC10TH10Pin 1 Indicator:

Product OverviewThe CJ3134KDW is a dual N-Channel MOSFET designed for surface mounting. It features low RDS(on) and operates at low logic-level gate drive, making it suitable for load/power switching, interfacing, battery management in portable electronics, and logic level shifting. This lead-free product is equivalent to two CJ3134K devices.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDProduct Type: Dual N-Channel MOSFETPackage: SOT-363Certificati

Product OverviewThe CJK1211 is a P-Channel Enhancement Mode Field Effect Transistor from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. It features an advanced trench MOSFET process technology and ultra-low on-resistance with low gate charge, making it suitable for PWM applications, load switching, and battery charging in cellular handsets.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDOrigin: ChinaPackage: SOT-23-3LTechnical SpecificationsParam

Product OverviewThe CJK3401AH is a P-Channel Enhancement Mode Field Effect Transistor from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, designed with a high-density cell structure for extremely low RDS(ON). It offers exceptional on-resistance and maximum continuous drain current capabilities, making it suitable for load switching in portable devices and DC/DC converters.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDPackage: SOT-23-3LTechnical

Product OverviewThe UM6K1N is a dual N-channel MOSFET featuring two independent 2SK3018 transistors in a single package. This design eliminates mutual interference, reduces mounting cost and area by half, and offers low on-resistance. Its low voltage drive capability (2.5V) makes it ideal for portable equipment.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDOrigin: Not specifiedMaterial: Plastic-Encapsulate MOSFETsColor: Not specifiedCertifications:

Product OverviewThe CJCD2003 is a Dual N-Channel MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It features ESD protection and is suitable for uni-directional or bi-directional load switch applications due to its common-drain configuration. This device is packaged in a DFNWB2x3-6L-C.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDModel: CJCD2003Package:

Product OverviewThe CJU80N03 is an N-Channel Power MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for high-density cell applications, offering ultra-low RDS(ON), fully characterized avalanche voltage and current, and good stability. The excellent package provides good heat dissipation, and special process technology ensures high ESD capability. This MOSFET is

Product OverviewThe CJ2302 is an N-Channel TrenchFET Power MOSFET designed for load switching in portable devices and DC/DC converters. It offers efficient power management with a 20V drain-source voltage and low on-resistance.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDPackage Type: SOT-23Molding Compound: Green molding compound deviceTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-Source VoltageVDS20VGate-Source

Product OverviewThe CJAC2R5SN04C is an N-Channel enhancement mode power field-effect transistor utilizing SGT technology. This advanced technology minimizes on-state resistance, offers superior switching performance, and withstands high energy pulses in avalanche and commutation modes, making it well-suited for high efficiency, fast switching applications such as battery switches, load switches, SMPS, general purpose applications, hard switched and high frequency circuits,