Single FETs, MOSFETs

Product OverviewThe 2SK3019A is an N-channel MOSFET designed for low on-resistance and fast switching speeds. Its low voltage drive capability makes it ideal for portable equipment and simplifies drive circuit design. It is easily paralleled for increased current handling.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDProduct Type: SOT-523 Plastic-Encapsulate MOSFETSOrigin: China (implied by manufacturer)Technical SpecificationsParameterSymbolTest

Product OverviewThe JX2060K is an N-Channel Enhancement Mode MOSFET featuring 20V MOSFET technology, low on-state resistance, and fast switching capabilities. It is designed for power switching and load switching applications, offering a maximum drain current of 60A and supporting Vgs up to 12V.Product AttributesBrand: JX (implied from product part number)Origin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsPart

Product OverviewThe CJW1012 is a single N-Channel Power MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed using an advanced Power Trench process to optimize RDS(ON). It features high-side switching, low on-resistance, low threshold voltage, and fast switching speed with ESD protection. This MOSFET is suitable for driver applications such as relays, solenoids, lamps, hammers, displays, and memories, as well as battery-operated systems, power supply

AO4805 -30V Dual P-Channel Enhancement-Mode MOSFETThe AO4805 is a -30V dual P-Channel enhancement-mode power MOSFET utilizing advanced trench DMOS technology. This technology is optimized for minimal on-state resistance, superior switching performance, and enhanced robustness against high energy pulses in avalanche and commutation modes. These devices are ideal for high-efficiency, fast-switching applications.Product AttributesBrand: JSMICRO SemiconductorCertifications: Pb

Product OverviewThe CJK3407 is a P-Channel MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology. It offers excellent RDS(on) with low gate charge, making it suitable for load switch and PWM applications.Product AttributesBrand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDOrigin: ChinaPackage: SOT-23-3LMaterial: Plastic-EncapsulateColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest

Product OverviewThe JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETs Dual N-Channel MOSFET is a high-performance power MOSFET designed for various applications. It features a TrenchFET Power MOSFET structure, offering excellent RDS(on), low gate charge, and high power and current handling capabilities in a compact SOT-23-6L surface mount package. Ideal for battery protection, load switches, and power management systems.Product Attributes

Product OverviewThe IRFP460PBF is a 500V N-Channel MOSFET designed for high-performance applications. It features fast switching speeds, 100% avalanche tested, and improved dv/dt capability, making it ideal for Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), and Power Factor Correction (PFC) systems.Product AttributesBrand: JSMICRO SemiconductorDevice Marking: IRFP460Package: TO-247Technical SpecificationsParameterSymbolTest ConditionsValueUnitDrain

Product DescriptionThis advanced high voltage N-Channel Power MOSFET is designed for efficient switching in high-speed applications and can withstand high energy in the avalanche mode. It features a fast recovery time for its drain-to-source diode. Ideal for power supplies, converters, power motor controls, and bridge circuits.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDDevice Code: CJU30N10Marking: U30N10Package: TO-252-2LMaterial: Plastic

Product OverviewThe JX3080K is an N-Channel Enhancement Mode MOSFET designed for efficient load switching applications. It features 30V MOSFET technology, low on-state resistance, and fast switching capabilities, making it suitable for various electronic designs. The device offers a Vgs range of 20V.Product AttributesBrand: JXOrigin: Not SpecifiedMaterial: Not SpecifiedColor: Not SpecifiedCertifications: Not SpecifiedTechnical SpecificationsPart NumberVDS (V)RDS(on) Typ. (m

Product OverviewThe CJL8810A is a Dual N-Channel MOSFET utilizing advanced trench technology to deliver excellent RDS(ON) and low gate charge. It features ESD protection and is suitable for use as a uni-directional or bi-directional load switch due to its common-drain configuration. This device is ideal for various load switching applications.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.Device Code: L8810APackage: SOT-23-6LTechnical Specification

Product OverviewThe IRF540N/NS is a 100V N-Channel MOSFET designed for high-performance switching applications. It features fast switching speeds, 100% avalanche testing for reliability, and improved dv/dt capability. This MOSFET is ideal for use in Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), and Power Factor Correction (PFC) systems.Product AttributesBrand: JSMICRO SemiconductorProduct Series: IRF540N/NSChannel Type: N-ChannelVoltage Rating:

Product OverviewN-Channel MOSFET in a SOT-23 Plastic Package featuring super high dense cell design for low RDS(ON). Ideal for battery management, high-speed switching, and low-power DC-DC converters.Product AttributesBrand: JSMICRO SemiconductorModel: JSM2302A-A2SHBPackage: SOT-23Marking: A2SHBTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitDrain-Source Breakdown VoltageV(BR)DSSVGS=0, ID=10A20VZero Gate Voltage Drain CurrentIDSSVGS=0, VDS=20V1.0AGateBody

Product OverviewThe CJM3005 is an N-Channel TrenchFET Power MOSFET designed for efficient load switching and battery applications. It offers low RDS(ON) and typical ESD protection, making it a reliable choice for various power management tasks.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDModel: CJM3005Package: DFNWB2X2-6L-JOrigin: China (implied by manufacturer name)Technical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitSTATIC

Product OverviewThe CJAC110N03 is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. It utilizes advanced trench technology and design to achieve excellent RDS(ON) with low gate charge. This MOSFET is suitable for a wide range of applications including battery switches, load switches, SMPS, general purpose applications, hard switched and high frequency circuits, and Uninterruptible Power Supply. Key features include high density cell design for

Product OverviewThe AO4407 is a P-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This MOSFET is designed for high power and current handling capabilities, making it suitable for applications such as battery switches, load switches, and power management. It is a lead-free product and comes in a surface mount package.Product AttributesBrand: JSMICRO

Product OverviewN-Channel Enhancement Mode Power MOSFET designed for portable devices and DC/DC converters. Features TrenchFET technology for efficient load switching.Product AttributesPackaging: SOT-23Epoxy Flammability: UL 94V-0Mounting Position: AnyTechnical SpecificationsParametersSymbolTest ConditionMinTypMaxUnitStatic Drain-Source Breakdown VoltageV(BR)DSSVGS=0V, ID=10uA20VVGS=0V, ID=10uAVVGS=0V, ID=10uAVGate-Threshold voltage*V GS (th)VDS=VGS, ID=250uA0.450.621.0VVDS

Product OverviewThe CJ3420 is an N-Channel Enhancement Mode Field Effect Transistor from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. Utilizing advanced trench technology, it offers excellent RDS(on) and is suitable for use as a uni-directional or bi-directional load switch.Product AttributesBrand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDProduct Name: CJ3420Package Type: SOT-23Origin: China (implied by manufacturer location)Technical SpecificationsParameterSy

Product OverviewThe JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD CJ3434 is an N-Channel MOSFET in a SOT-23 package. It features TrenchFET technology for low RDS(ON) and typical ESD protection, making it ideal for load switch and battery applications.Product AttributesBrand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDProduct Series: CJ3434Package Type: SOT-23Material: Plastic-EncapsulateTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitSTATIC

Product OverviewThe 2SK3018 is an N-Channel MOSFET designed for general switching circuits. It offers low conduction resistance, fast switching speed, and low voltage drive capabilities, making it suitable for various general switching applications.Product AttributesBrand: JSMICRO SemiconductorModel: 2SK3018Channel Type: N-Channel MOSFETTechnical SpecificationsParameterSymbolTest ConditionValueUnitAbsolute Maximum Ratings (Ta=25)Drain-Source VoltageVDS30VGate-Source

Product OverviewThe JSMICRO AO3402 is a N-Channel 30-V (D-S) MOSFET featuring TrenchFET technology. It is designed for surface mount applications and offers lead-free acquisition. This MOSFET is ideal for load switching in portable devices and DC/DC converters, providing efficient power management.Product AttributesBrand: JSMICRO SemiconductorProduct Code: AO3402Channel Type: N-ChannelPackage: SOT-23Certifications: Lead free product is acquiredTechnical SpecificationsParamete