Single FETs, MOSFETs
Dual N Channel MOSFET Load Switch with Common Drain Configuration and ESD Protection JSCJ CJBE5005 Low Gate Charge
Product DescriptionThe CJBE5005 is a Dual N-Channel MOSFET utilizing advanced trench technology, offering excellent RDS(ON) and low gate charge. It features ESD protection and is suitable for use as a uni-directional or bi-directional load switch due to its common-drain configuration. Its applications include load switching.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDPackage Type: DFNWB3X3-8L-KMaterial: Plastic-Encapsulate MOSFETSTechnical
N Channel Power MOSFET JSCJ CJU70N06 Featuring High EAS and Excellent Package for Thermal Management
Product OverviewThe CJU70N06 is an N-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide variety of power switching applications, including hard switched and high frequency circuits, and uninterruptible power supplies. Key features include good stability and uniformity with high EAS, excellent package for good heat dissipation, high density cell design for ultra low Rdson,
220AB Package P Channel MOSFET JSMSEMI IRF9Z34NPBF JSM Halogen Free Suitable for Battery Protection
Product OverviewP-CHANNEL MOSFET in a TO-220AB Plastic Package. Features high current capability and is a halogen-free product. Suitable for AC-in load switch and battery protection (charge/discharge) applications.Product AttributesBrand: JSMICRO SemiconductorModel: IRF9Z34NPBFPackage: TO-220ABMaterial: P-Channel MOSFETCertifications: HF Product (Halogen-Free)Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitAbsolute Maximum RatingsDrain-Source VoltageVDSS
Power switching N Channel MOSFET JSMSEMI JSM100N03D with 30V VDS and 100A drain current continuous rating
Product OverviewThe JSM100N03D is an N-Channel MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide variety of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Key features include a VDS of 30V, ID of 100A, and a low RDS(ON) of 5.5m@VGS=10V. The device boasts advanced high cell density trench technology for ultra-low RDS(ON)
Low Gate Charge N Channel MOSFET JSCJ CJU15N10 with High Continuous Drain Current and Thermal Stability
Product OverviewThe CJU15N10 is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. It utilizes advanced trench technology and design to achieve excellent RDS(ON) with low gate charge, making it suitable for a wide variety of power switching applications. Key features include excellent heat dissipation, ultra-low gate charge, low reverse transfer capacitance, fast switching capability, and specified avalanche energy.Product AttributesBrand:
Low Gate Charge N Channel Enhancement Mode Field Effect Transistor JSCJ CJ3404 Suitable for PWM and Load Switch Circuits
CJ3404 N-Channel Enhancement Mode Field Effect TransistorThe CJ3404 utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge, making it suitable for load switch and PWM applications. The separated source leads facilitate a Kelvin connection for bypassing source inductance.Product AttributesBrand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDPackage: SOT-23Material: Plastic-EncapsulateType: N-Channel Enhancement Mode Field Effect TransistorTech
Power MOSFET JSCJ CJAB25N04S N Channel with trench technology delivering low RDS ON and stable operation
Product OverviewThe CJAB25N04S is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It offers high power and current handling capability, a high-density cell design for ultra-low RDS(ON), and good stability with high EAS. This lead-free product is suitable for a wide range of applications including SMPS, general purpose applications, hard switched and high frequency
JSMSEMI AO8810 JSM N Channel MOSFET with low RDS ON resistance and pulsed drain current capability
Product OverviewThis high-density N-Channel Enhancement Mode MOSFET process is optimized for minimal on-state resistance, making it ideal for low-voltage applications where low inline power loss is critical. The device features a super high design for extremely low RDS(ON) and is housed in a compact TSSOP8 surface mount package.Product AttributesBrand: JSMICRO SemiconductorProduct Name: AO8810Certifications: Full RoHS complianceESD Rating: 2000V HBMTechnical SpecificationsSym
Low Gate Charge P Channel Power MOSFET JSCJ CJM1216 Suitable for PWM and Load Switching Applications
Product OverviewThe CJM1216 is a P-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(on), low gate charge, and operates with low gate voltage, making it suitable for load switching and various other applications like PWM, load switch, and battery charge in cellular handsets.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDPart Number: CJM1216Package: DFNWB22-6L-JTechnical SpecificationsParameterSymbolTest ConditionMinT
Power MOSFET N Channel Device JSCJ CJQ18SN06 with Low Gate Charge and High Side Switching Performance
Product OverviewThe CJQ18SN06 is an N-Channel Power MOSFET utilizing shielded gate trench technology. It is designed for high-side switch applications in SMPS and as a load switch, offering excellent RDS(ON) with low gate charge. This device is suitable for a wide variety of applications.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDProduct Code: CJQ18SN06Device Code: Q18SN06Origin: Made by JSCJMaterial: Plastic-Encapsulate MOSFETSColor: Green
High Current N Channel MOSFET JSCJ CJAC100SN08U 80V 100A Power Transistor for Fast Switching Circuits
Product DescriptionThese N-Channel enhancement mode power field effect transistors utilize SGT technology, offering minimized on-state resistance, superior switching performance, and high energy pulse withstand capability in avalanche and commutation modes. They are ideal for high efficiency fast switching applications such as battery switches, load switches, and LED applications.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDOrigin: China (implied
Low gate charge N Channel MOSFET 200V JSMSEMI IRFB4321PBF ideal for SMPS UPS and motor control applications
Product OverviewThe IRFB4321PBF is a 200V N-Channel MOSFET featuring proprietary new planar technology. It offers low gate charge for minimized switching loss and a fast recovery body diode. This MOSFET is suitable for applications such as DC-DC converters, DC-AC inverters for UPS, SMPS, and motor controls.Product AttributesBrand: JSMICRO SemiconductorProduct Code: IRFB4321PBFTechnology: Proprietary New Planar TechnologyPackage: TO-220Technical SpecificationsParameterSymbolTe
P Channel Enhancement Mode Field Effect Transistor JSCJ CJK2009 for PWM and Load Switching Functions
Product OverviewThe CJK2009 is a P-Channel Enhancement Mode Field Effect Transistor featuring advanced trench MOSFET process technology and ultra low on-resistance with low gate charge. It is designed for applications such as PWM, load switching, and battery charging in cellular handsets.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDOrigin: China (implied by manufacturer)Material: Plastic-Encapsulate MOSFETSCertifications: None explicitly
Power MOSFET JSCJ CJQ4606 in SOP8 Package for Low Voltage Switching in Commercial Industrial Devices
Product OverviewAdvance Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The SOP8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDProduct Series: CJQ4606Package Type: SOP8Material: Plastic-EncapsulateColor:
Dual N Channel MOSFET JSCJ CJS8820 Plastic Encapsulate with Integrated ESD Protection and Load Switch
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS CJS8820 Dual N-Channel MOSFETThe CJS8820 utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge, with integrated ESD protection. Its common-drain configuration makes it suitable for uni-directional or bi-directional load switch applications.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDOrigin: China (implied by company name and website
Low RDS ON Power MOSFET 40V N Channel JSMSEMI JSM7240 ideal for computing and telecom power conversion
Product OverviewThe JSM7240 is a 40V N-Channel Enhancement Mode Power MOSFET featuring Trench Power MOS Technology. It offers low RDS(ON), low gate charge, and high current capability. This RoHS and Halogen-Free compliant MOSFET is suitable for DC/DC converters in computing, and isolated DC/DC converters in telecom and industrial applications.Product AttributesBrand: JSMTechnology: Trench Power MOSCertifications: RoHS and Halogen-Free CompliantTechnical SpecificationsParamete
compact JSCJ CJK2333 P channel TrenchFET Power MOSFET ideal for DC DC converters and battery switches
Product OverviewThe CJK2333 is a P-channel TrenchFET Power MOSFET designed for efficient power management in portable devices. It offers excellent RDS(on) and low gate charge, making it suitable for DC/DC converters, load switches, and battery switches. The SOT-23-3L package ensures a compact footprint.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDPackage: SOT-23-3LMolding Compound: Green (if applicable)Technical SpecificationsParameterSymbolTest
Durable P Channel MOSFET JSMSEMI FDMA905P designed for low gate voltage operation and load switching
Product DescriptionThe FDMA905P is an Enhancement Mode P-Channel Power MOSFET utilizing advanced trench technology. This technology provides excellent RDS(ON), low gate charge, and allows operation with low gate voltages. It is ideally suited for load switching applications and a wide variety of other uses, including PWM applications and battery charging in cellular handsets.Product AttributesBrand: JSMICRO SemiconductorModel: FDMA905PPackage: DFN2X2-6LTechnology: Advanced
Low on resistance N channel MOSFET JSMSEMI 2N7002K 4V drive voltage suitable switching applications
Product Overview The 2N7002K is a 4V drive N-channel enhancement mode MOSFET designed for switching applications. It offers low on-resistance, high ESD protection, and high-speed switching capabilities, making drive circuits simple and facilitating parallel use. This device is suitable for general switching applications. Product Attributes Brand: JSMICRO Semiconductor Part Number: 2N7002K Package Type: SOT-23 Drive Voltage: 4V Technical Specifications Parameter Symbol Test
N Channel MOSFET JSCJ CJU80SN10 with Fast Switching Capability and Specified Avalanche Energy Rating
Product OverviewThe CJU80SN10 is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing shielded gate trench technology. It is designed to offer excellent RDS(ON) with low gate charge, making it suitable for a wide range of power switching applications. Key features include excellent heat dissipation, ultra low gate charge, low reverse transfer capacitance, fast switching capability, and specified avalanche energy.Product AttributesBrand:
