Single FETs, MOSFETs

Product OverviewThe CJQ10SN15S is an N-Channel Power MOSFET utilizing shielded gate trench technology and a low resistance package for extremely low RDS(ON). It is ideal for load switch and battery protection applications.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDDevice Code: Q10SN15SMolding Compound: Green (indicated by solid dot)Origin: ChinaTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-Source VoltageVDS150VGate

Product OverviewThe CJAB55N03S is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. Utilizing advanced trench technology, it offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including battery switches, load switches, SMPS, general purpose applications, hard switched and high frequency circuits, and Uninterruptible Power Supplies. Its high density cell design ensures ultra low RDS(ON), and it is

Product OverviewThe JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Dual N-Channel MOSFETs are designed for high-performance applications. Featuring TrenchFET technology, these devices offer excellent RDS(on), low gate charge, and high power and current handling capabilities in a surface mount package. They are ideal for battery protection, load switching, and power management.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDPackage: SOT

Product OverviewThe CJM1206 is a P-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(on) and low gate charge, enabling operation with low gate voltage. This device is ideal for load switching applications and various other uses, including PWM applications, load switches, and battery charging in cellular handsets.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDMaterial: Plastic-EncapsulateModel: CJM1206Package: DFNWB2

Product OverviewThe CJQ4435S is a P-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology. It offers excellent RDS(on), shoot-through immunity, superior body diode characteristics, and ultra-low gate resistance. This device is ideally suited for use as a low-side switch in Notebook CPU core power conversion applications, including battery switches and load switches.Product AttributesBrand: JIANGSU CHANGJING

Product OverviewThe 4407 is a P-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This high-performance MOSFET is designed for applications requiring robust power and current handling capabilities, such as battery switches, load switches, and power management solutions. It is a lead-free product available in a surface mount package.Product AttributesBrand

Product OverviewThese N-Channel enhancement mode power field effect transistors utilize SGT technology, offering minimized on-state resistance, superior switching performance, and high energy pulse withstand capability in avalanche and commutation modes. They are ideal for high efficiency, fast switching applications such as battery switches, load switches, and LED applications.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDOrigin: China (implied by

Product OverviewThe JSMICRO NDT2955 is a P-CHANNEL MOSFET designed for switching applications. It offers low on-resistance, high-speed switching, and low drive current, making it suitable for switching regulators and DC-DC converters. This device can be driven from a 5V source with a 4V gate drive.Product AttributesBrand: JSMICROModel: NDT2955Type: P-CHANNEL MOSFET FOR SWITCHINGPackage: SOT-223Website: www.jsmsemi.comTechnical SpecificationsItemSymbolMinTypMaxUnitTest

Product OverviewThe CJ8810 is an N-Channel MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed for surface mount applications. It features low Rds(on), ESD protected gate, and is suitable for load/power switching and small portable electronics. This device offers a V(BR)DSS of 20V and a continuous drain current of 7A.Product AttributesBrand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDModel: CJ8810Package: SOT-23Origin: China (implied by manufacture

Product OverviewThe CJU60SN08 is an N-Channel Power MOSFET utilizing shielded gate trench technology. It is designed to offer excellent RDS(ON) with low gate charge, making it suitable for a wide range of power switching applications. Key features include excellent heat dissipation, ultra low gate charge, low reverse transfer capacitance, fast switching capability, and specified avalanche energy.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDProduct

Product OverviewThe CJMN2012 is an N-Channel TrenchFET Power MOSFET designed for load switching in portable applications. It features a small DFNWB2x2-6L-J package and offers excellent performance with low on-resistance at various gate-source voltages.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDModel: CJMN2012Package: DFNWB2x2-6L-JTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-Source VoltageVDS20VGate-Source VoltageVGS10V

Product OverviewThe AO4468 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density advanced trench technology. This technology is optimized for minimal on-state resistance, making the device ideal for low voltage applications, notebook computer power management, and battery-powered circuits requiring high-side switching. It offers exceptional on-resistance and high continuous current capability.Product AttributesBrand: JSMICRO

Product OverviewThe JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD 2N7002KDW is a N-channel MOSFET in a SOT-363 package. It features a high-density cell design for low RDS(on), making it suitable for voltage-controlled small signal switching applications. This MOSFET is rugged, reliable, and offers high saturation current capability, with ESD protection.Product AttributesBrand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDOrigin: ChinaPackage: SOT-363Material:

Product OverviewThe CJ3415 is a P-Channel MOSFET designed for load switching and PWM applications. It offers excellent RDS(ON), low gate charge, and operates with low gate voltages, making it an efficient choice for various power management tasks.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDPackage: SOT-23Technical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-source breakdown voltageV(BR)DSSVGS = 0V, ID =-250A-20VGate threshold

Product OverviewThis N-Channel MOSFET features advanced trench technology and design, offering excellent RDS(ON) with low gate charge. It is suitable for a wide variety of applications, providing superior performance and efficiency. Key advantages include ultra-low RDS(ON) due to advanced high cell density trench technology, and excellent heat dissipation through its package design.Product AttributesBrand: JSMICRO SemiconductorModel: SI7884BDP-T1-GE3Material: N-Channel

Product OverviewThe CJE3139K is a P-Channel MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed for surface mount applications. It features low RDS(on) and operates at low logic level gate drive, making it suitable for load/power switching, interfacing, logic switching, and battery management in ultra-small portable electronics. This lead-free product offers efficient switching performance.Product AttributesBrand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY

Product OverviewThe CJMNT31 is a PNP Power Transistor with an integrated N-MOSFET, designed for power management applications in portable equipment. It features an ultra-low collector-to-emitter saturation voltage, high DC current gain, and comes in a compact DFNWB2x2-6L package. This device is ideal for charging circuits and other power management functions.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDMarking: 31Package: DFNWB2x2-6LTechnical

Product DescriptionThe CJ7252KDW is an N-Channel + P-Channel Power MOSFET designed using an advanced power trench process to optimize RDS(ON). It features high-side switching, low threshold, and fast switching speeds, making it suitable for applications such as relays, solenoids, memories, battery-operated systems, power supply converter circuits, and load/power switching in cell phones and pagers.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO.,

Product OverviewThe CJAB20N03 is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for a wide range of applications including battery switches, load switches, SMPS, general purpose applications, hard switched and high frequency circuits, and Uninterruptible Power Supply.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDPart

JSMICRO Semiconductor IRFR5305 P-Channel 60 V (D-S) MOSFET The JSMICRO IRFR5305 is a P-Channel TrenchFET Power MOSFET designed for load switching applications. Its advanced TrenchFET technology offers improved performance and efficiency. This device is suitable for applications requiring a 60V drain-source voltage and low on-state resistance. Product Attributes Brand: JSMICRO Semiconductor Product Type: P-Channel MOSFET Technology: TrenchFET Package: TO-252 Technical