Single FETs, MOSFETs

Product OverviewThe JSM36326 is a N-Channel Enhancement Mode Power MOSFET featuring Trench Power MOS Technology. It offers low RDS(ON), low gate charge, and high current capability, making it suitable for DC/DC converters in computing, and isolated DC/DC converters in telecom and industrial applications. This device is 100% UIS and Rg tested, and is RoHS and Halogen-Free compliant.Product AttributesBrand: JSM SemiconductorCertifications: RoHS and Halogen-Free CompliantTechnic

Product OverviewThe SI2300 (KI2300) is a N-Channel Enhancement MOSFET designed for various electronic applications. It features a low on-resistance and is available in a compact SOT-23-3 SMD package, making it suitable for space-constrained designs.Product AttributesBrand: KEXINOrigin: ChinaType: SMD Type MOSFETTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-Source Breakdown VoltageVDSSVGS=0V,ID=250uA20VZero Gate Voltage Drain CurrentIDSSVDS=20V,VGS

Product OverviewThe IRF3205S is an N-Channel MOSFET transistor designed for high current, high-speed switching applications. It offers fast switching speeds and minimum lot-to-lot variations for robust device performance and reliable operation. Ideal for switch mode power supplies.Product AttributesBrand: JSMICRO SemiconductorModel: IRF3205STechnical SpecificationsParameterSymbolConditionsMinTypeMaxUnitDrain-Source VoltageVDSSVGS=055VGate-Source VoltageVGS±20VDrain Current

AO3401 Plastic-Encapsulate MOSFETThis MOSFET offers strong current capacity and low on-resistance, making it suitable for general switching and low-voltage power supply circuits. It is designed for reliable performance in various electronic applications.Product AttributesBrand: JSMICRO SemiconductorModel: AO3401Material: Plastic-EncapsulateType: MOSFETTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitDrain-Source VoltageVDS-30VGate-Source VoltageVGS

CJQ9926 Dual N-Channel MOSFETThe CJQ9926 is a Dual N-Channel MOSFET featuring an advanced trench process technology and high-density cell design for ultra-low on-resistance. It offers high power and current handling capability, making it ideal for Li-ion battery pack applications.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDDevice Code: Q9926Marking: Solid dot = Green molding compound device, if none, the normal device. Q9926= Device code YY=Date

Product OverviewThis 130A, 150V N-CHANNEL MOSFET utilizes SGT MOSFET technology with an advanced Trench MOS structure. It offers low gate charge and low RDS(ON), with 100% EAS guaranteed. This device is available in a Green Device option and is suitable for applications such as Load Switches, LED applications, Networking, and Quick Chargers.Product AttributesBrand: KIA SEMICONDUCTORSPart Number: KCP2915BPackage: TO-220Origin: KIACertifications: Green Device AvailableTechnical

Product OverviewThe CJL8205A is a Dual N-Channel TrenchFET Power MOSFET designed for efficient power management applications. It offers excellent RDS(on), low gate charge, and high power and current handling capabilities, making it suitable for battery protection, load switching, and power management circuits. The device comes in a compact SOT-23-6L surface mount package.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDPart Number: CJL8205APackage:

Product OverviewThe SI2309DS (KI2309DS) is a P-Channel Enhancement MOSFET designed for various electronic applications. It offers key features like a high drain-source voltage of -60V and a continuous drain current of -1.25A at 25C. This MOSFET is suitable for applications requiring efficient switching and power control.Product AttributesBrand: KexinSMD Type: SI2309DS (KI2309DS)Origin: www.kexin.com.cnTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitAbsolute

Product OverviewThe AON7400 is a N-Channel Enhancement Mode MOSFET designed for power management applications. It features low on-resistance (RDS(ON)) and high current handling capabilities, making it suitable for use in notebook computers, portable equipment, and battery-powered systems. The device is reliable, rugged, and available in lead-free and green packaging.Product AttributesBrand: JSMICRO SemiconductorProduct Name: AON7400Type: N-Channel Enhancement Mode MOSFETCerti

Product OverviewThe DFNWB3x2-8L-I is a compact surface-mount package containing an N-channel MOSFET and a PNP bipolar transistor. This integrated solution offers high DC current gain, low threshold voltage, and is designed for power management applications in portable equipment, such as charging circuits.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDPackage: DFNWB3x2-8L-IMarking: M718 (Device code), YY (Code)Technical SpecificationsParameterSymbolP

Product OverviewThe CJFB30H20 is an N-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including full bridge switches, load switches, SMPS, general purpose applications, and hard switched/high frequency circuits. Key features include a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, good stability and

Product OverviewThis P-Channel MOSFET utilizes advanced trench technology and design to deliver excellent RDS(on) with low gate charge, making it suitable for a wide range of applications. Key features include a VDS of -30V, ID of -80A, and RDS(ON) as low as

Product OverviewThe CJU50SN10 is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing shielded gate trench technology. It is designed to offer excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications requiring high power and current handling capabilities, such as SMPS, general purpose applications, hard switched and high frequency circuits, uninterruptible power supplies, and power management. Its high

Product OverviewThe Kexin 2KK5016 is an N-Channel MOSFET in an SOT-523 SMD package. It features a Drain-Source Voltage (VDS) of 20V and a Continuous Drain Current (ID) of 238mA. With a low Rdson of 1.5 (Typ.) at Vgs=4.5V, low gate charge for fast switching, and ESD protected gate, this MOSFET is suitable for various applications requiring efficient power management.Product AttributesBrand: KexinOrigin: www.kexin.com.cnType: N-Channel MOSFETPackage: SOT-523Technical Specificat

Product OverviewThe JSM6764 is a N-Channel Enhancement Mode Power MOSFET featuring Trench Power MOS Technology. It offers low RDS(ON), low gate charge, and high current capability, making it suitable for DC/DC converters in computing, telecom, and industrial applications. This device is 100% UIS Tested and 100% Rg Tested, and is RoHS and Halogen-Free compliant.Product AttributesBrand: JSMTechnology: Trench Power MOSCompliance: RoHS and Halogen-FreeTesting: 100% UIS Tested,

Product OverviewThe JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Dual N-Channel MOSFETs are designed for high-performance applications. Featuring TrenchFET technology, these devices offer excellent RDS(on), low gate charge, and high power and current handling capabilities in a surface mount package. They are ideal for battery protection, load switching, and power management circuits.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO.,

Product OverviewThe 2N7002K is an N-Channel Enhancement MOSFET featuring ESD protection up to 2KV HBM. It offers low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage. This SMD type MOSFET is suitable for various electronic applications.Product AttributesBrand: KexinOrigin: China (implied by www.kexin.com.cn)Type: SMD Type MOSFETPackage: SOT-23Marking: K72Features: ESD Protected 2KV HBM, Low On-Resistance, Low

Product OverviewThe AD-2N7002KW is an N-Channel MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. It features a high-density cell design for low RDS(ON), making it suitable as a voltage-controlled small signal switch. This rugged and reliable MOSFET offers high saturation current capability, ESD protection, and is AEC-Q101 qualified. It is ideal for applications such as load switches for portable devices and DC/DC converters.Product AttributesBrand: JIANGSU

Product OverviewThe AO4800 is a 30V N-Channel Enhancement Mode MOSFET designed for power management applications. It offers low on-resistance (RDS(ON)) at various gate-source voltages, making it suitable for efficient power switching. This device is reliable, rugged, and available in lead-free and green options, with 100% UIS testing for quality assurance.Product AttributesBrand: JSMICRO SemiconductorProduct Series: AO4800Channel Type: N-ChannelMode: Enhancement ModeCertifica

Product OverviewThe CJ4459A is a P-Channel MOSFET that leverages advanced trench MOSFET technology and a low-resistance package to achieve extremely low RDS(ON). This device is ideally suited for load switch and battery protection applications.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDDevice Code: 4459APackage Type: SOT-23 Plastic-Encapsulate MOSFETSMarking: 4459AColor: Solid dot = Green molding compound device if none, the normal deviceTechnic