Single FETs, MOSFETs

Product OverviewLeveraging Geener advanced MOS technology, this product offers extremely low on-resistance (RDS(on)) and an excellent QgxRDS(on) product (FOM). It is qualified according to JEDEC criteria and is ideal for motor control and drive, battery management, and Uninterruptible Power Supplies (UPS).Product AttributesBrand: KMOS SemiconductorCertifications: Qualified according to JEDEC criteria, 100% DVDS Tested, 100% Avalanche TestedTechnical SpecificationsPart

Product OverviewThe KIA KNC2404A is a 190A, 40V N-CHANNEL MOSFET designed for power supply and DC-DC converter applications. It features low Rds(on) to minimize conductive loss and high avalanche current capability, making it a reliable component for efficient power management.Product AttributesBrand: KIA SEMICONDUCTORSModel: KNC2404AType: N-CHANNEL MOSFETCertifications: Lead free and green device availableTechnical SpecificationsParameterSymbolConditionsMinTypMaxUnitDrain-to

Product OverviewThe AO4485 is a P-Channel Enhancement Mode MOSFET from JSMICRO Semiconductor, offering robust performance with low on-resistance. It features a -40V drain-source voltage and continuous drain current capabilities, making it suitable for power management applications. Available in lead-free and green options, it adheres to RoHS compliance.Product AttributesBrand: JSMICRO SemiconductorCertifications: RoHS Compliant (Lead Free and Green Devices Available)Technical

Product OverviewThe KIA SEMICONDUCTORS 3306B is an 80A 60V N-CHANNEL MOSFET designed for high-efficiency power applications. It features a low RDS(ON) of 7mtyp@VGS=10V, minimizing conductive losses, and a high avalanche current capability. This device is suitable for use in power supplies and DC-DC converters.Product AttributesBrand: KIADevice Type: N-CHANNEL MOSFETModel: 3306BCertifications: Lead free and Green Device AvailableTechnical SpecificationsParameterSymbolCondition

Product OverviewThe SIR662DP-T1-GE3 is an N-Channel MOSFET featuring advanced trench technology and design, offering excellent RDS(on) with low gate charge. Its high cell density trench technology ensures ultra-low RDS(ON). This device is suitable for a wide variety of applications and is available as a green device. It boasts excellent package design for superior heat dissipation.Product AttributesBrand: JSMICRO SemiconductorModel: SIR662DP-T1-GE3Type: N-Channel MOSFETAvaila

Product OverviewThe KIA Semiconductors KNX2404A is a 190A, 40V N-Channel MOSFET designed for high-efficiency power applications. It features low on-state resistance (RDS(on)) to minimize conductive losses and high avalanche current capability. This device is suitable for power supplies and DC-DC converters.Product AttributesBrand: KIAProduct Name: KNX2404AChannel Type: N-CHANNELVoltage Rating: 40VCurrent Rating: 190ALead Free and Green Device AvailablePackage: TO-220Technical

Product OverviewThe 5N50 is an N-Channel Mode Power MOSFET designed for power switching applications. It offers excellent heat dissipation, high switching speed, and is 100% avalanche tested, making it suitable for demanding applications. The device features a TO-252 package for efficient thermal management.Product AttributesProduct ID: 5N50Package: TO-252Mode: N-ChannelType: Power MOSFETWebsite: http://www.trr-jx.comTechnical SpecificationsSymbolParameterTest ConditionsMinTy

Product OverviewThe KIA SEMICONDUCTORS 2908A is an 85V N-CHANNEL MOSFET featuring advanced SGT technology for extremely low RDS(on) of 3.7 m at Vgs=10V and an excellent gate charge x RDS(on) product (FOM). This MOSFET is designed for applications such as Motor Drives, SR (Synchronous Rectification), DC/DC Converters, and general-purpose applications.Product AttributesBrand: KIA SEMICONDUCTORSPart Number: 2908ATechnology: SGTTechnical SpecificationsParameterSymbolConditionsTO

Product OverviewThe 7N50 is an N-Channel Mode Power MOSFET designed for power switching applications. It offers an excellent package for good heat dissipation, high switching speed, and is 100% avalanche tested. This MOSFET is suitable for various power switching applications.Product AttributesProduct ID: 7N50Package: TO-252Mode: N-ChannelBrand: XXXX (implied from marking)Origin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical

90A, 30V N-CHANNEL MOSFETThis N-Channel MOSFET offers very low on-resistance (RDS(ON)), low Crss, and fast switching capabilities. It is 100% avalanche tested and features improved dv/dt capability. Ideal for PWM applications, load switching, and power management.Product AttributesBrand: KIAPart Number: KNG3303C, KNY3303C, KND3303COrigin: KIA SEMICONDUCTORSTechnical SpecificationsParameterSymbolDFN3*3/5*6TO-252UnitConditionsDrain-source breakdown voltageBVDSS30VVGS=0V,ID

Product OverviewThis N-Channel MOSFET utilizes advanced trench technology and design to deliver excellent RDS(on) with low gate charge. It is suitable for a wide range of applications, featuring high cell density trench technology for ultra-low RDS(ON) and an excellent package for effective heat dissipation.Product AttributesBrand: JSMICRO SemiconductorDevice Type: N-Channel MOSFETPackage: SOP-8Green Device: AvailableTechnical SpecificationsParameterSymbolConditionsMinTypMaxU

Product OverviewThe AO4813 is a -30V dual P-Channel enhancement-mode power MOSFET utilizing advanced trench DMOS technology. This design minimizes on-state resistance and offers superior switching performance, making it ideal for high-efficiency, fast-switching applications. It is well-suited for high energy pulse withstand in avalanche and commutation modes and supports -4.5V gate drive applications.Product AttributesBrand: JSMICRO SemiconductorPackage: SOP-8Certifications:

Product DescriptionThe JSM7409B is a Plastic-Encapsulate MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. This high-power and current-handling device is suitable for applications such as battery switches, load switches, and power management.Product AttributesBrand: JSMCRO SemiconductorProduct Name: JSM7409BMaterial: Plastic-EncapsulateCertifications: Lead free product is

Product OverviewThe FDC5614P is a 60V P-Channel enhancement mode power MOSFET utilizing advanced trench DMOS technology. This technology is optimized for low on-state resistance, superior switching performance, and high energy handling in avalanche and commutation modes. It is well-suited for high efficiency, fast switching applications.Product AttributesBrand: JSMICRO SemiconductorTechnology: Trench DMOSCertifications: Green Device AvailableTechnical SpecificationsSymbolPara

AON7534 N-Channel Enhancement Mode MOSFETThe AON7534 is a high-performance N-Channel Enhancement Mode MOSFET designed for efficient power management. It offers a combination of low on-resistance (RDS(ON)) and reduced switching losses, making it ideal for applications requiring high-speed switching and minimal conduction losses. Its reliable and rugged construction, along with 100% UIS + Rg tested, ensures dependable operation. This device is available in lead-free and green

Product OverviewThis P-Channel MOSFET utilizes advanced trench technology and design, offering excellent RDS(on) with low gate charge. It is suitable for a wide range of applications, providing efficient performance and good heat dissipation.Product AttributesBrand: JSMICRO SemiconductorModel: AOD407Type: P-Channel MOSFETCertifications: Green device availableTechnical SpecificationsParameterSymbolConditionsMinTypMaxUnitsAbsolute Maximum RatingsDrain-Source VoltageVDS-60VGate

Product OverviewThe CJAB40SN10 is an N-Channel Power MOSFET utilizing SGT technology for excellent RDS(ON) and low gate charge. Its high-density cell design ensures ultra-low RDS(ON), and it is fully characterized for avalanche voltage and current. This MOSFET offers good stability and uniformity with high EAS and excellent package for good heat dissipation, making it suitable for a wide variety of applications including load switching, uninterruptible power supplies, SMPS,

Product Overview The AO4406A is an N-Channel logic enhancement mode power field-effect transistor manufactured using high cell density advanced trench technology. This technology minimizes on-state resistance, making the device suitable for load switching and synchronous buck converter applications, including PWM and gate charge control. Product Attributes Brand: JSMICRO Semiconductor Origin: China (implied by page numbering and language) Material: High cell density advanced

Product DescriptionThe CJAB25N03 is an N-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including battery switches and load switches. Key features include a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, good stability and uniformity with high EAS, an excellent package for good heat dissipation, and

Product OverviewThis 130A, 80V N-Channel MOSFET (2908D) from KMOS Semiconductor offers low Rds-on to minimize conductive loss and high avalanche current. It is suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supply systems.Product AttributesBrand: KIAModel: 2908DType: N-CHANNEL MOSFETCertifications: Lead free and Green Device AvailableTechnical SpecificationsPart NumberPackageVDS (V)ID (A) @ TC=25CID (A) @ TC