Single FETs, MOSFETs

Product OverviewThis is a 10A, 650V N-Channel Planar MOSFET (Model: 10N65B) from KMOS Semiconductor. It features an advanced planar process, low gate charge to minimize switching loss, and a fast recovery body diode. It is RoHS compliant and offers a typical RDS(ON) of 0.75. Ideal for adaptors, chargers, and SMPS standby power applications.Product AttributesBrand: KMOS SemiconductorModel: 10N65BPackage: TO-220FCertifications: RoHS CompliantTechnical SpecificationsParameterSym

Product OverviewThe JSM10N15 is an N-channel MOSFET in a TO-252 plastic package, designed for low voltage applications. It features low RDS(on), low gate charge, low Crss, and fast switching speeds. This product is halogen-free and is suited for automotive circuits, DC/DC converters, high-efficiency power management in portable and battery-operated products, and power management interface cards for TVs or monitors.Product AttributesBrand: JSMICRO SemiconductorOrigin:

KIA SEMICONDUCTORS KCT1810A - 240A, 100V N-CHANNEL MOSFETThe KIA SEMICONDUCTORS KCT1810A is an N-CHANNEL MOSFET designed with advanced SGT technology, offering extremely low RDS(on) and excellent gate charge x RDS(on) product (FOM). It is suitable for demanding applications such as motor control and drives, battery management, DC/DC converters, and general-purpose applications.Product AttributesBrand: KIAPart Number: KCT1810APackage: TOLL-8Technical SpecificationsParameterSym

Product OverviewThe KIA SEMICONDUCTORS 3306B is an 80A 60V N-CHANNEL MOSFET designed for high-efficiency power applications. It features a low Rds(on) of 7mtyp@VGS=10V to minimize conductive loss and a high avalanche current capability. This device is suitable for power supplies and DC-DC converters.Product AttributesBrand: KIADevice Type: N-CHANNEL MOSFETPart Number: 3306BLead Free and Green Device AvailableTechnical SpecificationsParameterSymbolConditionsTO-252TO-263UnitsNo

Product OverviewThe 2KJ7110DFN is a P-Channel MOSFET in a DFN1006-3 SMD package, designed for various electronic applications. It features a drain-source voltage of -20V and a continuous drain current of -0.66A. With low on-resistance values at different gate-source voltages, it offers efficient power handling.Product AttributesBrand: KexinOrigin: ChinaPackage Type: DFN1006-3Technical SpecificationsParameterSymbolRatingUnitTest ConditionsDrain-Source Breakdown VoltageBVDSS

Product Overview The KIA SEMICONDUCTORS 840S is an 8A, 500V N-CHANNEL MOSFET designed for various power supply applications. It features low on-resistance, low gate charge, and a peak current vs. pulse width curve. This RoHS compliant component is suitable for adaptors, TV main power, SMPS power supplies, and LCD panel power. Product Attributes Brand: KIA SEMICONDUCTORS Model: 840S Channel Type: N-CHANNEL Certifications: RoHS compliant Technical Specifications Parameter

Product OverviewThis product offers advanced characteristics for various applications. It features specific diode characteristics, continuous drain current capabilities, and normalized RDSON and Vth values. The product also includes gate charge waveforms, transient impedance, and safe operation area information, along with switching time waveforms.Product AttributesBrand: JSM4435Technical SpecificationsCharacteristicValueUnitNotesDrain-Source Diode CharacteristicsContinuous

Product DescriptionThis N-Channel MOSFET utilizes advanced trench technology and design to achieve excellent RDS(on) with low gate charge. It is suitable for a wide range of applications, offering advantages such as low gate charge, advanced high cell density trench technology for ultra-low RDS(ON), and an excellent package design for efficient heat dissipation. This device is also available as a green product.Product AttributesBrand: JSMICRO SemiconductorProduct Name:

Product OverviewThe KIA SEMICONDUCTORS KNX3404B is an 80A, 40V N-CHANNEL MOSFET featuring CRM(CQ) advanced Trench MOS technology. It offers extremely low on-resistance (RDS(ON),typ.=5.0m@VGS=10V) and an excellent QgxRDS(on) product (FOM). This MOSFET is qualified according to JEDEC criteria and is suitable for applications such as motor control and drive, battery management, and Uninterruptible Power Supplies (UPS).Product AttributesBrand: KIA SEMICONDUCTORSPart Number:

Product OverviewThis document describes the SI2301 (KI2301), a P-Channel Enhancement MOSFET designed for various electronic applications. It features a low on-resistance and is available in an SMD package for surface mounting.Product AttributesBrand: KexinOrigin: China (www.kexin.com.cn)SMD Type: SI2301 (KI2301)Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitDrain-Source Breakdown VoltageVDSSID=-250A, VGS=0V-20VVDS=-20V, VGS=0V-1VVDS=-20V, VGS=0V, TJ=55

N-Channel Enhancement MOSFET SI2302 (KI2302) The SI2302 (KI2302) is an N-Channel Enhancement MOSFET designed for various applications. It features a Drain-Source Voltage (VDS) of 20V and low On-Resistance (RDS(on)) at different Gate-Source Voltages (VGS), making it suitable for power switching and control circuits. Product Attributes Brand: Kexin SMD Type: SOT-23-3 Origin: www.kexin.com.cn Technical Specifications Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source

Product OverviewThe BSS138 is a TrenchFET Power MOSFET designed for load switching in portable devices and DC/DC converters. It features a SOT-23 package and is UL 94V-0 rated for flammability.Product AttributesPackage: SOT-23Flammability Rating: Epoxy UL 94V-0Mounting Position: AnyTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitStatic CharacteristicsV(BR)DSSVGS=0V, ID=250uA50VVGS (th)VDS=VGS, ID=1mA0.81.5VRDS(ON)VGS=10V, ID=0.22A3.56Continuous Drain

Product OverviewThis N-Channel Enhancement MOSFET is designed for various applications requiring efficient switching. It features low on-resistance at specified gate-source voltages and continuous drain currents, making it suitable for power management tasks.Product AttributesBrand: KEXINOrigin: www.kexin.com.cnSMD Type: SOT-23-3Marking: 2310Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitDrain-Source Breakdown VoltageVDSSID=250A, VGS=0V20VGate-Body Leakage

Product OverviewThe Kexin 2KJ7107DFN is a P-channel MOSFET in a SMD Type package, featuring a low threshold voltage, very fast switching, and Trench MOSFET technology. It offers 2 kV ElectroStatic Discharge (ESD) protection, making it suitable for applications requiring robust performance and protection.Product AttributesBrand: KexinOrigin: www.kexin.com.cnMaterial: MOSFETCertifications: 2 kV ESD protectionTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitDra

Product OverviewThe KNX2408A is an N-CHANNEL MOSFET from KIA SEMICONDUCTORS, utilizing advanced trench technology to deliver excellent RDS(ON) and low gate charge. It is suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies.Product AttributesBrand: KIA SEMICONDUCTORSOrigin: KIA SEMICONDUCTORSTechnical SpecificationsParameterSymbolRatingUnitsTO-220TO-263TO-247Drain-source voltageVDSS80

Product OverviewThis N-CHANNEL MOSFET from KIA SEMICONDUCTORS, model 2302, is designed for applications requiring a 3.0A continuous drain current and a 20V drain-source voltage. It offers low on-resistance characteristics at various gate-source voltages and drain currents, making it suitable for power switching and amplification tasks.Product AttributesBrand: KIA SEMICONDUCTORSModel: 2302Type: N-CHANNEL MOSFETTechnical SpecificationsParameterSymbolRatingUnitsTest ConditionsDr

Product OverviewThe KIA SEMICONDUCTORS KNB2803T is a 150A, 30V N-Channel Power MOSFET featuring Advanced Trench technology. It offers a low on-resistance of 2.4m (typ.) at VGS=10V, super low gate charge, and excellent CdV/dt effect decline. This green device is 100% Vds and UIS tested, making it suitable for demanding power applications.Product AttributesBrand: KIA SEMICONDUCTORSPart Number: KNB2803TPackage: TO-263Technology: KMOS SemiconductorGreen Device Available:

Product OverviewThe KIA-8103A is a high-performance N-channel Trench MOSFET with extreme high cell density, offering excellent RDS(on) and gate charge for synchronous buck converter applications. It meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approved. Key advantages include advanced high cell density Trench technology, super low gate charge, and excellent Cdv/dt effect decline. It is ideal for high-frequency point-of

Product Overview The KND3404C is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, ensuring efficient power conversion. This device is RoHS and Green Product compliant, with 100% EAS guaranteed and full functional reliability approval. Product Attributes Brand: KIA SEMICONDUCTORS Product Name: KNX3404C Certifications: RoHS, Green Product EAS Guaranteed: 100%

Product OverviewThe IRFH5406TRPBF is a 60V/50A N-Channel MOSFET designed for power switching applications. It features a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, and excellent stability and uniformity with high EAS. The package is optimized for good heat dissipation, making it suitable for demanding power applications.Product AttributesBrand: JSMICRO SemiconductorModel: IRFH5406TRPBFPackage: PDFN5X6-8LTechnical