Single FETs, MOSFETs

Product OverviewThis N-CHANNEL ENHANCEMENT MOSFET features TrenchFET technology, making it suitable for load switching in portable devices and DC/DC converters. Its SOT-23 package is designed for ease of mounting and compatibility with standard PCB layouts.Product AttributesPackage: SOT-23Flammability Rating: Epoxy UL: 94V-0Mounting Position: AnyBrand: JX (implied by JX2302)Origin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical

Product OverviewThe KIA SEMICONDUCTORS KPD3204B is a -100A, -40V P-CHANNEL MOSFET designed for high-performance applications. It features super low gate charge, 100% EAS guaranteed, and excellent CdV/dt effect decline due to its advanced high cell density Trench technology. This device offers a low RDS(ON) of 3.2m (typ.) at VGS=-10V, making it suitable for demanding power management tasks.Product AttributesBrand: KIA SEMICONDUCTORSPart Number: KPD3204BPackage: TO-252Certifica

Product Overview The KIA SEMICONDUCTORS KNX2710A is a 160A, 100V N-CHANNEL MOSFET featuring proprietary new trench technology. It offers a low RDS(ON) of 4.5 m typ. at VGS=10V, low gate charge for minimized switching loss, and a fast recovery body diode. This MOSFET is ideal for high efficiency DC/DC converters, synchronous rectification, and UPS inverters. Product Attributes Brand: KIA Origin: KIA SEMICONDUCTORS Part Number: KNX2710A Package: TO-263 Technical Specifications

Product OverviewThe SI2306 is an N-Channel 30V (D-S) MOSFET featuring TrenchFET technology. It offers low on-state resistance at various gate voltages (65m@10V, 90m@4.5V) and a continuous drain current of 3.5A. This MOSFET is designed for applications such as load switching in portable devices and DC/DC converters.Product AttributesBrand: Not SpecifiedOrigin: Not SpecifiedMaterial: Not SpecifiedColor: Not SpecifiedCertifications: Not SpecifiedTechnical SpecificationsParameter

Product OverviewThe AO4354 is a 30V/23A N-Channel MOSFET featuring advanced high cell density Trench technology. It offers super low gate charge, excellent CdV/dt effect decline, and is available as a Green Device. This MOSFET is designed for high-frequency point-of-load synchronous buck converters, networking DC-DC power systems, and load switch applications.Product AttributesDevice Code: 4354AGreen Device Available: YesTechnical SpecificationsParameterSymbolConditionMinTypM

Product OverviewThe 20N03 is an N-Channel Mode Power MOSFET featuring a high-density cell design for ultra-low RDS(on). It is designed for power switching applications.Product AttributesBrand: trr-jx (implied by URL)Origin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitDrain-Source VoltageVDS30VGate-Source VoltageVGS12VContinuous Drain CurrentIDTC=25,TJ=15020APower

Product OverviewThis N-CHANNEL MOSFET from KIA SEMICONDUCTORS, model 6140A, offers a 10A current rating and 400V voltage capability. It features proprietary new planar technology, low RDS(ON) of 0.35 (typ.) at VGS=10V, minimized switching loss due to low gate charge, and a fast recovery body diode. Ideal for ballast and lighting, DC-AC inverters, and other applications.Product AttributesBrand: KIAOrigin: KIA SEMICONDUCTORSModel: 6140ATechnical SpecificationsPart NumberPackage

Product OverviewThis 11A, 650V N-Channel MOSFET from KIA Semiconductors utilizes advanced super-junction technology. It is engineered to minimize conduction loss, offer superior switching performance, and provide high ruggedness for avalanche and commutation modes. This device is ideal for high-efficiency AC/DC power conversion in switching mode operations.Product AttributesBrand: KIA SEMICONDUCTORSProduct Name: 65R420Channel Type: N-CHANNELVoltage Rating: 650VCurrent Rating:

Product OverviewThe 7N65B is a 7A, 650V N-CHANNEL PLANAR MOSFET from KMOS Semiconductor. It features an advanced planar process, low gate charge for minimized switching loss, and a fast recovery body diode. This MOSFET is suitable for applications such as adaptors, chargers, and SMPS standby power.Product AttributesBrand: KIAPart Number: KND7N65BPackage: TO-252Certifications: RoHS CompliantTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitElectrical

Product OverviewThe 2N7002 is a Surface Mount Device (SMD) type N-Channel Enhancement MOSFET. It features a high-density cell design for low Rds(on), acting as a voltage-controlled small signal switch. This MOSFET is rugged, reliable, and offers high saturation current capability, making it suitable for various electronic applications.Product AttributesBrand: KexinOrigin: China (implied by .cn domain)Marking: 702Package: SOT-23Technical SpecificationsParameterSymbolTest

Product Overview30A, 40V N-CHANNEL MOSFET. Features very low on-resistance (RDS(ON)=12m typ. @VGS=10V), low Crss, and fast switching. 100% avalanche tested with improved dv/dt capability. Ideal for PWM applications, power management, and load switches.Product AttributesBrand: KIAPart Number: KNS8104APackage: SOT-89Technical SpecificationsParameterSymbolRatingUnitsTest ConditionsDrain-source voltageVDSS40VTC=25C unless otherwise notedContinuous drain currentID30ATC=25CContinuo

Product OverviewThe P-Channel 30V (D-S) MOSFET features TrenchFET Power MOSFET technology, making it suitable for load switching in portable devices and DC/DC converters. It offers a low on-state resistance and efficient switching characteristics.Product AttributesBrand: Not SpecifiedOrigin: Not SpecifiedMaterial: Not SpecifiedColor: Not SpecifiedCertifications: Not SpecifiedTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-Source VoltageVDS-30VGate

Product OverviewThe AO4618 is an N+P Channel MOSFET utilizing advanced trench technology and design to deliver excellent on-resistance (RDS(ON)) with low gate charge. This device is suitable for a wide variety of applications due to its efficient performance and robust construction.Product AttributesBrand: JSMICRO SemiconductorDevice Type: N+P Channel MOSFETTechnology: Advanced high cell density trench technologyCertifications: Green device availableTechnical SpecificationsPa

Product OverviewThe KNX2708A is a 160A, 80V N-CHANNEL MOSFET from KIA SEMICONDUCTORS. Featuring proprietary new trench technology, it offers a low RDS(ON) of 4.0m (typ.) at VGS=10V, minimized switching loss due to low gate charge, and a fast recovery body diode. This MOSFET is ideal for high-efficiency DC/DC converters, synchronous rectification, and UPS inverters.Product AttributesBrand: KIAPart Number: KNX2708APackage: TO-220 (KNP2708A), TO-263 (KNB2708A)Technical

Product OverviewThis N-Channel 20-V (D-S) MOSFET features a TrenchFET Power design, offering low on-resistance and high current capability. It is ideal for load switching in portable devices and DC/DC converters.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-Source VoltageVDS20VGate-Source VoltageVGS±12VContinuous Drain

Product OverviewThe AO4612 is a 60V Complementary Enhancement Mode Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for applications such as H-bridges and inverters. This device features complementary n-channel and p-channel MOSFETs.Product AttributesBrand: JSMICRO SemiconductorModel: AO4612Origin: China (implied by page numbering and URL)Technical SpecificationsParameterSymboln-channel Minn

Product OverviewThis N-channel MOSFET features low on-resistance and fast switching speed, making it ideal for portable equipment due to its low voltage drive capability. Its easily designed drive circuits and suitability for paralleling enhance its application flexibility.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitsDrain

Product OverviewThe KIA SEMICONDUCTORS 2910A is a 130A, 100V N-CHANNEL MOSFET designed for high efficiency synchronous rectification in SMPS and high-speed power switching applications. It features an ultra-low On-Resistance of 7.0m at VGS=10V, a super high dense cell design, and is 100% avalanche tested. Lead-Free and Green devices are available (RoHS Compliant).Product AttributesBrand: KIA SEMICONDUCTORSProduct Name: 2910AType: N-CHANNEL MOSFETCertifications: RoHS Compliant

Product OverviewThis P-CHANNEL MOSFET from KIA SEMICONDUCTORS offers a drain-source voltage of -20V and a continuous drain current of -2.8A. It is designed for applications requiring efficient switching and power management, with low on-state resistance at various gate-source voltages.Product AttributesBrand: KIA SEMICONDUCTORSModel: 2301Technical SpecificationsParameterSymbolRatingUnitsTest ConditionsMinTypMaxDrain-source voltageVDS-20VGate-source voltageVGS+8VDrain current

Product OverviewThe JSMICRO Semiconductor 8205A is a 20V N-Channel Enhancement-Mode MOSFET designed for high-density, low on-resistance applications. It features low gate drive voltage (2.5V) and low drive current, making it ideal for battery protection, particularly in lithium battery applications. Available in TSSOP-8 and SOT-23-6 packages.Product AttributesBrand: JSMICRO SemiconductorModel: 8205AChannel Type: N-ChannelMode: Enhancement-ModeVoltage Rating: 20VPackage Types: