Single FETs, MOSFETs

Product OverviewThe KIA SEMICONDUCTORS KNX2908B is an N-CHANNEL MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, as well as uninterruptible power supplies. Its high-density cell design contributes to lower RDS(ON), and it is fully characterized for avalanche voltage and current, ensuring good stability and

Product OverviewThe KIA35P10A is a P-CHANNEL MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of applications. This device meets RoHS and Green product requirements, with 100% EAS guaranteed and full functional reliability approved.Product AttributesBrand: KIA SEMICONDUCTORSProduct Name: 35P10AChannel Type: P-CHANNELVoltage Rating: -100VCurrent Rating: -35ACertifications: RoHS, Green device

Product OverviewThis 130A, 45V N-CHANNEL SGT MOSFET utilizes advanced SGT technology to offer high robustness, reliability, and increased maximum current capability. It provides low power loss and high power density, making it easy to parallel. Ideal for synchronous rectification in AC/DC quick chargers, battery management systems, and uninterruptible power supplies.Product AttributesBrand: KIA SEMICONDUCTORSPart Number: KCB2904A (TO-263), KCP2904A (TO-220)Technology:

Product OverviewThis N-Channel TrenchFET Power MOSFET is designed for efficient switching applications. It features a low on-resistance and fast switching speeds, making it suitable for various power management solutions.Product AttributesBrand: Not SpecifiedOrigin: Not SpecifiedMaterial: Plastic-EncapsulateColor: Not SpecifiedCertifications: Not SpecifiedTechnical SpecificationsParameterSymbolTest ConditionsMINTYPMAXUnitMaximum RatingsVDSDrain-Source voltage20VVGSGate-Source

Product Overview The KCX3310A is a 100V N-CHANNEL MOSFET from KIA SEMICONDUCTORS, designed with advanced SGT technology for low RDS(on) and excellent FOM. It offers extremely low switching loss, fast switching, and soft recovery, making it ideal for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. Key features include low On-Resistance (typ. 5.0m) and excellent stability and uniformity. Product Attributes Brand: KIA

Product OverviewThe KNX2404N is a 190A, 40V N-CHANNEL MOSFET from KIA SEMICONDUCTORS. It features a low RDS(ON) of 4m (typ.) at VGS=10V, proprietary new trench technology, low gate charge to minimize switching loss, and a fast recovery body diode. This MOSFET is suitable for DC-DC converters, DC-DC inverters, and power supply applications.Product AttributesBrand: KIA SEMICONDUCTORSPart Number: KNX2404NPackage: TO-220Brand: KIATechnical SpecificationsSymbolParameterTest

Product OverviewThe JX2090K is an N-Channel Enhancement Mode MOSFET featuring 20V technology, low on-state resistance, and fast switching capabilities. Designed for power switching and load switching applications, it offers a Vgs range of 12V.Product AttributesBrand: JX (implied from part number)Origin: China (implied from website http://www.trr-jx.com)Certifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitsDrain to Source Breakdown

Product OverviewThe 15N10 is an N-Channel Mode Power MOSFET designed for power switching applications. It offers high switching speed with low gate charge and low CRSS, making it suitable for efficient power conversion.Product AttributesBrand: Not SpecifiedOrigin: Not SpecifiedMaterial: Not SpecifiedColor: Not SpecifiedCertifications: Not SpecifiedTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitMAXIMUM RATINGSVDSDrain-Source Voltage100VVGSGate-Source

Product OverviewThis P-Channel MOSFET features a 20V Drain-Source Voltage (VDS) and low on-resistance (RDS(on)MAX) of 110m at -4.5V and 150m at -2.5V. With a continuous drain current (ID) of -2.4A, it is designed for high-density cell applications and offers an extremely low threshold voltage. Its excellent ON resistance makes it suitable for higher DC current applications.Product AttributesDevice Code: WT1Marking: WT1 = Device Code, * = Month (A~Z)Technical SpecificationsPar

Product Overview150A, 30V N-Channel Power MOSFET featuring Advanced Trench technology. This device offers a low RDS(ON) of 2.4m (typ.) at VGS=10V, super low gate charge, and excellent CdV/dt effect decline. It is 100% Vds and UIS tested, with a green device available. Suitable for various power applications requiring efficient switching and high current handling.Product AttributesBrand: KIA SEMICONDUCTORSModel: KND2803TPackage: TO-252Origin: KMOS SemiconductorTechnical

Product OverviewThe KIA3415 is a P-CHANNEL MOSFET utilizing advanced trench technology, offering excellent RDS(on) and low gate charge. It is designed for operation with gate voltages as low as 1.8V, making it suitable for load switch or PWM applications. This is a standard, Pb-free product that meets ROHS & Sony 259 specifications and is available as a Green Product option.Product AttributesBrand: KIA SEMICONDUCTORSModel: KIA3415Type: P-CHANNEL MOSFETCertifications: ROHS &

Product OverviewThe KIA SEMICONDUCTORS KPE4403B is a -5A, -30V P-CHANNEL MOSFET designed for various power management applications. It features a low on-resistance of 40m (typ.) at VGS=-10V and supports -5V logic level control. Packaged in a SOP-8, this Pb-free and RoHS compliant MOSFET is ideal for load switching, switching circuits, high-speed line drivers, and general power management functions.Product AttributesBrand: KIAPart Number: KPE4403BPackage: SOP-8Certifications:

Product OverviewHigh-frequency DC-DC converters are ideal applications for this SMPS Power MOSFET. It offers lead-free benefits and features low gate-to-drain charge to reduce switching losses. The fully characterized capacitance, including effective Coss, simplifies design. Avalanche voltage and current are also fully characterized.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical

Product OverviewThe 4N65 is an N-Channel Mode Power MOSFET designed for power switching applications. It features high current rating, lower RDS(ON), and fast switching capability, making it suitable for various power applications.Product AttributesProduct ID: 4N65Package: TO-252Features: High Current Rating, Lower RDS(ON), Fast Switching CapabilityApplication: Power switching applicationWebsite: http://www.trr-jx.comTechnical SpecificationsParameterSymbolTest ConditionsMinTy

Product OverviewThis 130A, 200V N-CHANNEL MOSFET utilizes SGT MOSFET technology and proprietary New Trench Technology. It offers a low RDS(ON) of 9.8m (typ.) at VGS=10V, low gate charge to minimize switching loss, and a fast recovery body diode. It is ideal for DC-DC Converters and high-frequency switching and synchronous rectification applications.Product AttributesBrand: KIAOrigin: KIA SEMICONDUCTORSModel Series: 2920KTechnical SpecificationsParameterSymbolTO-263, TO-220TO

JX3401S3 P-Channel Enhancement Mode MOSFETThe JX3401S3 is a P-Channel Enhancement Mode MOSFET featuring Advanced Trench Technology, suitable for power management and load switching applications. Its surface mount package design makes it ideal for compact electronic systems.Product AttributesBrand: JXOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitsDrain to Source

Product OverviewThis product family of Silicon Carbide (SiC) MOSFETs offers state-of-the-art performance designed for high-frequency applications requiring high efficiency and reliability. Key features include high voltage, low on-resistance, high speed, low parasitic capacitance, high junction temperature, a fast recovery diode, and Kelvin connection for the driver. It is ideal for demanding applications such as motor drives, photovoltaic inverters, UPS power supplies, high

Product OverviewThe KI230 is a P-Channel MOSFET designed for various applications requiring efficient switching and power control. It features a VDS of -20V and low RDS(ON) at different gate-source voltages, making it suitable for demanding tasks. The device is available in a compact SOT-23-3 SMD package for easy integration into surface-mount designs.Product AttributesBrand: KexinOrigin: China (implied by www.kexin.com.cn)SMD Type: SOT-23-3Technical SpecificationsParameterSy

Product Overview The 2N7002K is a high-density N-Channel MOSFET designed for low RDS(ON) and voltage-controlled small signal switching. It offers ruggedness, reliability, and high saturation current capability, with built-in ESD protection. This MOSFET is ideal for load switch applications in portable devices and DC/DC converters. Product Attributes Package: SOT-23 Flammability Rating: Epoxy UL 94V-0 Mounting Position: Any Brand: (Not specified) Origin: (Not specified)

Product OverviewThis N-CHANNEL MOSFET from KIA SEMICONDUCTORS offers a 30V drain-source voltage and a continuous drain current of 3.5A. It features low on-resistance (RDS(on)) at specified gate-source voltages, making it suitable for power applications. The device is 100% Rg tested.Product AttributesBrand: KIA SEMICONDUCTORSProduct Type: N-CHANNEL MOSFETModel Number: 2306Technical SpecificationsParameterSymbolRating/ConditionUnitsTypicalMaximum1. FeaturesDrain-source