Single FETs, MOSFETs

Product OverviewThe SI2300 is an N-Channel Enhancement Mode Field Effect Transistor designed for voltage-controlled small signal switching. It features a high-density cell design for low RDS(ON), is rugged and reliable, and offers high saturation current capability. This transistor is suitable for applications requiring efficient switching and high current handling in a compact SOT-23 package.Product AttributesBrand: DEMACHELPackage Type: SOT-23Technical SpecificationsParamet

Product OverviewThe 20P06S is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent on-resistance (RDSON) and low gate charge, contributing to efficient power conversion. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. It features fast switching capabilities and advanced high cell density Trench technology, ensuring excellent CdV/dt

20N65 N-Channel Enhancement Mode MOSFET The 20N65 is a high-performance N-Channel Enhancement Mode MOSFET designed for demanding power applications. It features a 650V drain-source voltage, a continuous drain current of 20A, and a low on-resistance of 0.35 (Typ.) at VGS = 10V, ID = 10A. This MOSFET offers fast switching speeds and improved dv/dt capability, making it suitable for Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), and Power Factor

Product OverviewThe SI2328 is an N-Channel Enhancement Mode Field Effect Transistor designed for high-density cell applications, offering low RDS(ON) and serving as a voltage-controlled small signal switch. It is rugged, reliable, and capable of high saturation current. This transistor is suitable for applications requiring efficient switching and low power loss.Product AttributesMarking Code: D8***Type Number: SI2328Technical SpecificationsParameterSymbolTest ConditionsMinTy

Product OverviewThe 120N10 is an N-Channel Power MOSFET featuring ultra-low RDS(ON) and low gate charge. It is 100% UIS tested and 100% Rg tested, offering Pb-free lead plating and being Halogen-free and RoHS-compliant. This MOSFET is ideal for motor driving in power tools, e-vehicles, and robotics, as well as current switching in DC/DC & AC/DC (SR) sub-systems and power management in telecom, industrial automation, and CE products.Product AttributesCertifications: Pb-free

Product Overview The BSS123 is a Plastic-Encapsulated MOSFET designed for voltage-controlled small signal switching applications. It features a high-density cell design for low RDS(ON), rugged and reliable construction, and high saturation current capability. This N-MOSFET is suitable for high-density applications. Product Attributes Marking Type number: BSS123 Marking code: SAW Package Type: SOT-23 Technical Specifications Parameter Symbol Test Condition Min Typ Max Unit

Product OverviewThe FDN360P is a Plastic-Encapsulate MOSFET designed for high-density cell applications, offering low RDS(ON). It functions as a voltage-controlled small signal switch, known for its ruggedness, reliability, and high saturation current capability. This component is suitable for various applications requiring efficient switching and power management.Product AttributesMarking Type number: FDN360PMarking code: A79TPackage: SOT-23Technical SpecificationsParameterS

Product OverviewThe 60N04 is an N-channel Enhancement Mode Power MOSFET featuring advanced Trench Technology. It offers excellent RDS(ON) and low gate charge, making it suitable for load switch and PWM applications within power management systems. This product is 100% UIS and Vds tested for reliability.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolCondit

Product OverviewThe AON7544 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(on) and gate charge characteristics, contributing to efficient power conversion. This product meets RoHS and Green Product requirements, with 100% EAS guaranteed and full functional reliability approval.Product AttributesBrand: AONCertifications: RoHS, Green Device AvailableTechnology: Advanced high cell density Trench

Product OverviewThese N-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology. This technology is optimized for minimal on-state resistance, superior switching performance, and high energy pulse withstand capability in avalanche and commutation modes. They are well-suited for high-efficiency, fast-switching applications, offering improved dv/dt capability, fast switching, and embedded ESD protection up to 2KV. Available as a Green

Product OverviewThe 30P06 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed and features super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCe

Product OverviewThe 8205S is a Dual N-Channel MOSFET in a SOT23-6 package, featuring TrenchFET technology for excellent RDS(on), low gate charge, and high power and current handling capability. It is ideal for applications such as battery protection, load switching, and power management.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionMinTypMa

Product OverviewThe IRF640 is a third-generation HEXFET MOSFET from International Rectifier, designed for cost-effectiveness and superior performance. It offers a combination of fast switching, ruggedized design, low on-resistance, and low thermal resistance, making it suitable for power dissipation levels up to approximately 50 watts. The TO-220-3L package is widely adopted in commercial and industrial applications.Product AttributesBrand: International RectifierProduct Type

Product OverviewThe AOD403 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approval.Product AttributesBrand: AODCertifications: RoHS, Green ProductType: P-Ch 30V Fast Switching MOSFETTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max

Product OverviewThe BSN20 is a Plastic-Encapsulated MOSFET in a SOT-23 package. It features a high density cell design for low RDS(ON), making it suitable as a voltage-controlled small signal switch. This device is rugged, reliable, and offers high saturation current capability.Product AttributesMarking Type: BSN20Marking Code: SSPackage Type: SOT-23Technology: Plastic-Encapsulate MOSFETSFeature: High density cell design for low RDS(ON)Feature: Voltage controlled small signal

Product Overview The 2N7002K is a Plastic-Encapsulated MOSFET designed for voltage-controlled small signal switching. It features a high-density cell design for low RDS(ON), offering a rugged and reliable solution with high saturation current capability. This MOSFET is suitable for various applications requiring efficient switching. Product Attributes Marking Type number: 2N7002K Marking code: 7002 Package: SOT-23 Technology: Plastic-Encapsulate MOSFETS Technical Specificatio

Product OverviewThe HKTQ65N03 is a low voltage N-channel MOSFET designed for efficient power management. It features ultra-low on-resistance, making it ideal for low power DC to DC converters and load switch applications. This surface mount device comes in a PDFN3333 package.Product AttributesBrand: HKT (GUANGDONG HOTTECH INDUSTRIAL CO.,LTD)Origin: China (implied by manufacturer name)Case Material: Molded PlasticFlammability Classification: UL 94V-0Marking: Q65N03Email: hkt

Product OverviewThese P-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology. This technology is optimized to minimize on-state resistance, provide superior switching performance, and offer high energy pulse withstand capability in avalanche and commutation modes. These devices are well-suited for high efficiency, fast switching applications.Product AttributesBrand: DEMACHModel: SI2303Technology: Trench DMOSFeatures: Fast switching,

Product OverviewThe 100N03NF is a high cell density N-channel MOSFET featuring excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. It meets RoHS and Green Product requirements, is 100% EAS guaranteed, and offers full function reliability.Product AttributesCertifications: RoHS, Green ProductTechnical SpecificationsSymbolParameterTest ConditionMin.Typ.Max.UnitsVDSDrain-Source Voltage--30VVGSGate-Source Voltage--±20VID@TC

Product OverviewThe AO4435 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDSON and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approval.Product AttributesBrand: AOCertifications: RoHS, Green ProductReliability: 100% EAS GuaranteedTechnical SpecificationsProduct NameBVDSSRDSONIDVDSSVGSSIDMPDRJATJ, TSTGV(BR