Single Bipolar Transistors

Product Overview The Nexperia BCV47 is an NPN Darlington transistor housed in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. Designed for medium current applications up to 500 mA and low voltages up to 60 V, it offers a high DC current gain of a minimum of 2000. Its PNP complement is the BCV26. This transistor is suitable for applications such as preamplifier input amplification. Product Attributes Brand: Nexperia Product Type: NPN Darlington

Product Overview The PEMH7 and PUMH7 are NPN/NPN resistor-equipped transistors designed to simplify circuit design and reduce component count. Featuring built-in bias resistors (R1 = 4.7 k, R2 = open), these devices are ideal for low current peripheral drivers, replacements for general-purpose transistors in digital applications, and control of IC inputs. Their design leads to reduced pick and place costs. Product Attributes Brand: Nexperia (formerly NXP Semiconductors)

Product Overview This is a silicon bipolar epitaxial planar NPN-PNP matched power amplifier transistor designed for high-fidelity audio applications. It offers a large collector current of Ic=16A and a high collector-emitter voltage of VCEO250V. The transistor features a wide safe operating area (3.2A/80V @ 1 Second) and excellent frequency characteristics (fT>20MHz), making it suitable for output stages of high-fidelity audio amplifiers exceeding 100W. It is designed for

Product Overview The NHUMD10/13/9 series comprises NPN/PNP resistor-equipped double transistors (RET) in a compact SOT363 (SC-88) SMD plastic package. These devices offer an 80 V breakdown voltage and 100 mA output current capability. Featuring built-in resistors, they simplify circuit design, reduce component count, and lower pick-and-place costs. They are AEC-Q101 qualified and suitable for digital applications, controlling IC inputs, switching loads, and serving as cost

Product Overview The Minos 2SC5198 is a Silicon NPN Triple Diffused Type transistor designed for power amplifier applications. It is complementary to the 2SA1941 and features a high collector voltage of 140V (min). This transistor is recommended for use in 100-W high-fidelity audio frequency amplifier output stages. Note: Continuous operation under heavy loads, such as high temperature, current, or voltage, or significant temperature changes, may significantly reduce product

Product OverviewThe BC846, BC847, and BC848 are NPN bipolar transistors in a SOT-23 package, ideally suited for automatic insertion. They are designed for switching and AF amplifier applications.Product AttributesBrand: MicrodiodePackage: SOT-23Technical SpecificationsModelParameterSymbolTest ConditionsMinUnitMaxTypBC846, BC847, BC848Collector-Base VoltageVCBOIE=0VBC84680BC84750BC84830BC846, BC847, BC848Collector-Emitter VoltageVCEOIB=0VBC84665BC84745BC84830Emitter-Base

Nexperia PDTC123J Series NPN Resistor-Equipped Transistors Product Overview The Nexperia PDTC123J series comprises NPN Resistor-Equipped Transistors (RETs) in small Surface-Mounted Device (SMD) plastic packages. These transistors are designed for digital applications in automotive and industrial segments, offering a cost-saving alternative to traditional BC847/857 series. Key benefits include reduced component count, simplified circuit design, and lower pick-and-place costs

Nexperia BCP56 Series: 80 V, 1 A NPN Medium Power Transistors Product Overview The Nexperia BCP56 series offers NPN medium power transistors in a compact SOT223 (SC-73) surface-mounted device (SMD) plastic package. These transistors are designed for high collector current capability, offering multiple current gain selections and a high power dissipation capability. They are ideal for applications such as linear voltage regulators, MOSFET drivers, low-side switches, power

Product Overview The PDTC124T series NPN resistor-equipped transistors are designed for general-purpose switching and amplification, as well as inverter and interface circuits, and circuit driver applications. These transistors feature built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick-and-place costs. They are ideal for automotive, industrial, computing, consumer, and wearable application markets. Product Attributes Brand:

Nexperia PEMH9; PIMH9; PUMH9 NPN/NPN Resistor-Equipped Transistors (RET) Nexperia's PEMH9, PIMH9, and PUMH9 series are NPN/NPN double Resistor-Equipped Transistors (RET) designed for surface-mounted applications. These devices integrate built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick-and-place costs. They are AEC-Q101 qualified, making them suitable for demanding applications. Product Overview These NPN/NPN double Resistor

Product Overview This NPN silicon transistor is designed for audio power amplification. It offers reliable performance with key electrical parameters and is housed in a TO-220 package, suitable for various audio applications. Product Attributes Brand: MNS Type: NPN SILICON TRANSISTOR Package: TO-220 Origin: Shenzhen Minos (Shenzhen Minos reserves the right to make changes in this specification sheet and is subject to change without prior notice.) Technical Specifications

Product Overview The Nexperia PDTA143X series is a family of PNP resistor-equipped transistors (RET) designed for surface-mounted device (SMD) applications. These transistors feature built-in bias resistors, reducing component count and simplifying circuit design. They offer a 100 mA output current capability and are AEC-Q101 qualified, making them suitable for digital applications in automotive and industrial segments. This series serves as a cost-saving alternative to BC847

Product Overview The Nexperia PDTC143Z series comprises NPN resistor-equipped transistors (RETs) in surface-mounted device (SMD) plastic packages. These transistors feature built-in bias resistors (R1 = 4.7 k, R2 = 47 k) that reduce component count, simplify circuit design, and lower pick-and-place costs. They offer a 100 mA output current capability and are AEC-Q101 qualified. Ideal for digital applications in automotive and industrial segments, they serve as a cost-saving

MMBT2907A Transistor (PNP)The MMBT2907A is a PNP transistor in a SOT-23 plastic-encapsulated package. It features epitaxial planar die construction and is a complementary NPN type to the MMBT2222A. This transistor is suitable for various electronic applications requiring amplification and switching.Product AttributesBrand: MicrodiodePackage: SOT-23Type: PNPComplementary NPN Type: MMBT2222ATechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitCollector-Base

Product Overview The Nexperia PBSS5350Z is a 50 V, 3 A PNP low VCEsat transistor designed for efficient power management. This transistor offers a low collector-emitter saturation voltage (VCEsat), high collector current capability, and high current gain (hFE) at high collector currents, leading to reduced heat generation and improved energy efficiency. It is ideal for applications such as DC/DC converters, supply line switching, battery chargers, LED backlighting, linear

Product Overview The Nexperia PDTB1xxxT series is a family of PNP resistor-equipped transistors (RET) designed for digital applications. These devices feature built-in bias resistors, simplifying circuit design and reducing component count. They offer a 500 mA output current capability and are AEC-Q101 qualified, making them suitable for high-temperature applications up to 175 C. These transistors serve as a cost-saving alternative to BC807 or BC817 series transistors for

Product Overview The Nexperia PUMD2 is a resistor-equipped double transistor (RET) featuring both NPN and PNP configurations within a single, compact SOT363 (SC-88) SMD plastic package. This device integrates built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick-and-place costs. It is designed for low-current peripheral driving, controlling IC inputs, and as a replacement for general-purpose transistors in digital applications. The

Product Overview The Nexperia PDTC143E series comprises NPN Resistor-Equipped Transistors (RET) in compact Surface-Mounted Device (SMD) plastic packages. These transistors are designed to reduce component count and simplify circuit design with their built-in bias resistors, leading to lower pick-and-place costs. They are AEC-Q101 qualified, making them suitable for digital applications in the automotive and industrial segments. The PDTC143E series offers a cost-saving

Product OverviewThe MMBT5401 is a PNP bipolar transistor in a SOT-23 plastic-encapsulated package. It is complementary to the MMBT5551 and is ideal for medium power amplification and switching applications.Product AttributesBrand: MicrodiodePackage: SOT-23Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitCollector-Base VoltageVCBO-160VCollector-Emitter VoltageVCEO-160VEmitter-Base VoltageVEBO-5VCollector CurrentIC-0.6ACollector Power DissipationPC(Ta=25)0

Product Overview The Nexperia PDTC114EU is an NPN Resistor-Equipped Transistor (RET) designed for digital applications in automotive and industrial segments. Featuring built-in bias resistors (R1 = 10 k, R2 = 10 k), this component simplifies circuit design, reduces component count, and lowers pick-and-place costs. It offers an output current capability of 100 mA and is AEC-Q101 qualified, making it a cost-saving alternative for BC847/857 series in digital applications and