Single Bipolar Transistors
power transistor Nexperia PBSS303PX115 30 volt 5.1 amp PNP low VCEsat for compact electronic designs
Product Overview The Nexperia PBSS303PX is a 30 V, 5.1 A PNP low VCEsat transistor designed for surface-mounted applications. It offers a low collector-emitter saturation voltage (VCEsat), high collector current capability (IC and ICM), and high collector current gain (hFE) at high IC. These features contribute to high efficiency with less heat generation and a smaller PCB area requirement compared to conventional transistors. The PBSS303PX is AEC-Q101 qualified, making it
Nexperia PDTA114TT 215 PNP Resistor Equipped Transistors Offering Compact Package and Easy Assembly
Nexperia PDTA114T Series: PNP Resistor-Equipped Transistors The Nexperia PDTA114T series comprises PNP Resistor-Equipped Transistors (RET) in compact plastic packages. These transistors are designed to reduce component count, simplify circuit design, and lower pick-and-place costs. They are ideal for digital applications and serve as a cost-effective alternative to the BC857 series in such scenarios, functioning as low-current peripheral drivers and for controlling IC inputs.
Power Amplification Darlington Transistor Minos MJD127 Featuring Internal Damping Diode For Circuit
Product Overview This Darlington transistor is designed for high-gain circuits and includes an internal damping diode. It is suitable for applications requiring significant amplification. Product Attributes Brand: MNS (implied from www.mns-kx.com) Origin: Shenzhen, China (implied from contact information) Technical Specifications Parameter Symbol Description Min Typical Max Unit Test Conditions Collector-Base Breakdown Voltage BVCBO -100 V IC=-1mA, IE=0 Collector-Emitter
Nexperia PUMD15 115 RET Transistor Featuring Built in Bias Resistors for Reduced Pick and Place Costs
Product Overview The Nexperia PEMD15 and PUMD15 are NPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. These devices feature built-in bias resistors, reducing component count and simplifying circuit design, which in turn lowers pick and place costs. They are AEC-Q101 qualified, making them suitable for low current peripheral driver applications, control of IC inputs, and as replacements for general-purpose transistors in
NPN resistor equipped transistor Nexperia PDTC144ET215 offering AEC Q101 qualification for automotive
Nexperia PDTC144E Series NPN Resistor-Equipped Transistors Product Overview The Nexperia PDTC144E series comprises NPN resistor-equipped transistors (RETs) in surface-mounted device (SMD) plastic packages. These transistors feature built-in bias resistors (R1 = 47 k, R2 = 47 k), reducing component count and simplifying circuit design. They offer a 100 mA output current capability and are AEC-Q101 qualified, making them suitable for digital applications in automotive and
Nexperia PBSS4140T 215 NPN transistor 40V 1A low VCEsat in SOT23 package for general purpose switching
Product Overview The Nexperia PBSS4140T is a 40 V, 1 A NPN low VCEsat (BISS) transistor housed in a compact SOT23 plastic package. Designed for general-purpose switching and muting, it offers high current capabilities and improved device reliability due to reduced heat generation. Its applications include LCD backlighting, supply line switching circuits, and battery-driven equipment such as mobile phones, video cameras, and hand-held devices. The PNP complement is the
Nexperia PBSS8110T 215 Low VCEsat NPN Transistor for Power Management and Inductive Load Driving
Product Overview The Nexperia PBSS8110T is an NPN low VCEsat transistor housed in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. It offers a low collector-emitter saturation voltage (VCEsat) and high collector current capability, making it suitable for various demanding applications. Key application segments include automotive 42 V power systems, telecom infrastructure, industrial power management, DC/DC converters, supply line switching, battery
30 Volt 3 Amp NPN Transistor Nexperia PBSS4330X135 Low VCEsat Suitable for Battery Chargers and More
Product Overview The Nexperia PBSS4330X is a 30 V, 3 A NPN low VCEsat (BISS) transistor designed for efficient power management and peripheral driving applications. It features a low collector-emitter saturation voltage (VCEsat), high collector current capability, and reduced heat generation, leading to improved efficiency and smaller printed-circuit board requirements. Ideal for DC/DC converters, supply line switching, battery chargers, LCD backlighting, and driving
Simplify circuit design with Nexperia PDTA123ET215 PNP transistor featuring built in bias resistors
Product Overview The PDTA123E series comprises PNP resistor-equipped transistors designed for simplified circuit design, reduction of component count, and decreased pick and place costs. These transistors are suitable for general-purpose switching and amplification, as well as inverter and interface circuits, and circuit driver applications. They feature built-in bias resistors with typical values of R1 = 2.2 k and R2 = 2.2 k. Product Attributes Brand: NXP Semiconductors
NPN switching transistor Nexperia PMBT3904 215 with 40 volt collector emitter voltage in compact SOT23
Nexperia PMBT3904: 40 V, 200 mA NPN Switching Transistor Product Overview The Nexperia PMBT3904 is an NPN switching transistor designed for general switching and amplification applications. Encased in a compact SOT23 surface-mounted device (SMD) plastic package, this transistor offers a collector current capability of up to 200 mA and a collector-emitter voltage of 40 V. It is AEC-Q101 qualified, making it suitable for automotive applications. Its PNP complement is the
NPN Resistor Equipped Transistor Nexperia PDTC123JT 215 SOT23 Package AEC Q101 Qualified for Automotive
Product Overview The Nexperia PDTC123J series comprises NPN Resistor-Equipped Transistors (RETs) in small Surface-Mounted Device (SMD) plastic packages. These transistors feature built-in bias resistors, reducing component count, simplifying circuit design, and lowering pick-and-place costs. They are AEC-Q101 qualified and suitable for digital applications in automotive and industrial segments, serving as a cost-saving alternative to BC847/857 series. Key applications include
NPN Resistor Equipped Transistor PDTC144EU QX by Nexperia for Automotive and Industrial Applications
Product Overview The PDTC144EU-Q is an NPN Resistor-Equipped Transistor (RET) designed for digital applications in automotive and industrial segments. It features built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick and place costs. This device offers a 100 mA output current capability and is qualified according to AEC-Q101, making it suitable for automotive applications. It serves as a cost-saving alternative for BC847-Q series in
NPN resistor equipped transistor Nexperia PDTD123YUX 500 mA 50 V for switching load applications
Nexperia PDTD1xxxU Series: 500 mA, 50 V NPN Resistor-Equipped Transistors Product Overview The Nexperia PDTD1xxxU series comprises NPN resistor-equipped transistors (RETs) designed for high-temperature applications up to 175 C. These transistors are housed in a very small SOT323 (SC-70) surface-mounted device (SMD) plastic package. Featuring built-in bias resistors, they simplify circuit design and reduce component count, offering a cost-saving alternative to discrete BC807
switching and amplification transistor Nexperia BC817DS115 NPN NPN general purpose double transistor
Product Overview The Nexperia BC817DS is an NPN/NPN general-purpose double transistor designed for switching and amplification applications. This device offers reduced component count and pick and place costs, making it an efficient choice for various electronic designs. It is AEC-Q101 qualified, ensuring suitability for automotive applications. Product Attributes Brand: Nexperia Product Type: NPN/NPN general purpose double transistors Complementary PNP/PNP: BC807DS
Silicon Bipolar Epitaxial Planar NPN PNP Paired Transistor Minos MJL21196 for Audio Power Amplifiers
Product Overview This is a silicon bipolar epitaxial planar NPN-PNP paired power amplifier transistor designed for high-fidelity audio applications. It offers a large collector current of Ic=16A and a high collector-emitter voltage of VCEO250V. The transistor features a wide safe operating area (3.2A/80V @ 1 Second) and excellent frequency characteristics with fT > 20MHz. It is suitable for the output stage of high-fidelity audio amplifiers exceeding 100W. The device is
Audio Power Amplification Applications Using Minos MJE2955T PNP Power Transistor with TO220 Package
Product Overview The MJE2955T is a PNP power transistor designed for audio power amplification. It offers robust performance with specific electrical characteristics and absolute maximum ratings crucial for reliable circuit design. This device is suitable for applications requiring audio power amplification. Product Attributes Brand: MNS (implied from www.mns-kx.com) Model: MJE2955T Package Type: TO-220 Technical Specifications Parameter Symbol Description Minimum Typical
Nexperia BC847BV 115 NPN transistor designed for switching applications in small form factor package
Product Overview The Nexperia BC847BV is an NPN general-purpose double transistor designed for switching and amplification applications. Housed in an ultra-small SOT666 flat lead plastic package, this transistor offers a total power dissipation of 300 mW and features very low collector capacitance. Its straight leads ensure excellent coplanarity and improved thermal behavior, reducing the need for multiple components and saving board space. The BC847BV is the PNP complement
NPN PNP transistor Nexperia BC847QAPNZ designed for mobile device applications in compact DFN1010B 6
Product Overview The Nexperia BC847QAPN is a general-purpose NPN/PNP transistor designed for switching and amplification applications, particularly in mobile devices. This AEC-Q101 qualified component is housed in an ultra-small, leadless DFN1010B-6 (SOT1216) plastic package, offering a low profile of 0.37 mm. Its design contributes to reduced component count and lower pick-and-place costs in manufacturing. Product Attributes Brand: Nexperia Certifications: AEC-Q101 qualified
General purpose PNP transistor Nexperia BC807DS115 with low component count and AECQ101 certification
Product Overview The Nexperia BC807DS is a PNP/PNP general-purpose double transistor designed for switching and amplification applications. This AEC-Q101 qualified component offers reduced component count and lower pick-and-place costs, making it suitable for automotive applications. It is available in an SOT457 (SC-74) plastic package. Product Attributes Brand: Nexperia Product Type: PNP/PNP general purpose double transistors Complementary NPN/NPN: BC817DS Complementary NPN
NPN transistor NH S9014 with 0.1A collector current and 45V collector emitter voltage in compact SOT23 package
Product OverviewThe S9014 is an NPN transistor manufactured by Niuhang Specification Electronic Co. Ltd. It is designed for general-purpose applications and offers a collector current of 0.1A and a collector-emitter voltage of 45V. The device is packaged in a SOT-23 package, making it suitable for various electronic circuits.Product AttributesBrand: Niuhang Specification Electronic Co. LtdPackage: SOT-23Epoxy UL Rating: 94V-0Mounting Position: AnyWeight: approx. 0.01gTechnica