Single FETs, MOSFETs
Hangzhou Silan Microelectronics SVF20N60F featuring F Cell structure and low on resistance for power management
Product OverviewThe SVF20N60F is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM structure VDMOS technology. Engineered with an improved planar stripe cell and guard ring terminal, it offers reduced on-state resistance, superior switching performance, and enhanced high-energy pulse withstand capability in avalanche and commutation modes. This device is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge
Power MOSFET GOODWORK 50N10 N Channel 100V 50A Low Gate Charge for Industrial Robotics Applications
Product OverviewThe 50N10 is an advanced N-Channel Power MOSFET designed for high-performance power management applications. It features ultra-low RDS(ON), low gate charge, and high current capability, making it ideal for demanding scenarios such as industrial automation, motor driving in electric vehicles and robotics, and current switching in DC/DC and AC/DC sub-systems. Its molded plastic package (TO-252) offers a robust and versatile mounting solution.Product AttributesCa
Surface Mount N Channel MOSFET Guangdong Hottech IRLML6244 with Low On Resistance and Fast Switching
IRLML6244 MOSFET (N-CHANNEL) The IRLML6244 is an N-channel MOSFET designed for surface mount applications. It features low on-resistance, fast switching speeds, and ultra-low on-resistance, making it suitable for various electronic circuits requiring efficient power management. Product Attributes Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD Part Number: IRLML6244 Type: MOSFET (N-CHANNEL) Package: SOT-23 Case Material: Molded Plastic Flammability Classification: UL 94V-0 Weight
N Channel Power MOSFET Hangzhou Silan Microelectronics SVF3878PN with Low On Resistance TO3P Package
Product OverviewThe SVF3878PN is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM structure VDMOS technology. It features an improved planar stripe cell and guard ring terminal designed to minimize on-state resistance, enhance switching performance, and provide superior robustness in avalanche and commutation modes. This device is ideal for AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.Product
GOODWORK FDN304P GK trenched P channel MOSFET designed for and synchronous buck converter operation
Product OverviewThe FDN304P is a high cell density trenched P-channel MOSFET designed for excellent RDS(on) and gate charge, making it ideal for synchronous buck converter applications. This Green Device meets RoHS requirements and offers full function reliability. It features super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.Product AttributesBrand: DEMACHELCertifications: RoHS, Green ProductTechnical SpecificationsSymbo
Energy synchronous buck converter MOSFET GOODWORK AO3415 3L featuring low gate charge and RDS ON values
Product OverviewThe AO3415 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge, meeting RoHS and Green Product requirements with full reliability.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: RoHS, Green ProductTechnical SpecificationsParameterSymbolRatingUnitsTest ConditionMin.Typ.Max.Electrical Characteristics
Fast Switching N Channel MOSFET 100V GOODWORK 40N10 with Low Gate Charge and Excellent Cdvdt Effect
Product OverviewThe 40N10 is a N-Ch 100V Fast Switching MOSFET featuring Super Low Gate Charge and Excellent Cdv/dt effect decline. It utilizes Advanced high cell density Trench technology, offering a high-performance solution for various applications. This device is also available as a Green Device.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest
voltage controlled small signal switch GOODWORK SI2301S designed for rugged applications and low RDS
Product OverviewThe SI2301S is a voltage-controlled small signal switch designed with a high-density cell structure for low RDS(ON). It offers ruggedness, reliability, and high saturation current capability, making it suitable for various applications.Product AttributesBrand: DEMACHELType: SOT-23 Plastic-Encapsulate MOSFETSTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitMaximum RatingsVDS-20VVGS±8VID-2.3AIDM-10AIS-0.72APD1.0WRJA(t 5s)357℃/WElectrical
N channel power MOSFET Guangdong Hottech IRLML6344 with 30V drain source voltage and low on resistance
Product OverviewThe IRLML6344 is an N-CHANNEL POWER MOSFET designed for various electronic applications. It offers a maximum drain-source voltage of 30V and a maximum gate-source voltage of 12V, with low on-resistance characteristics.Product AttributesBrand: SHENZHEN HOTTECH ELECTRONICS CO.,LTDCase Material: Molded plasticFlammability Classification: UL 94V-0Terminal Finish: Lead free plating, solderable per MIL-STD-202, method 208Technical SpecificationsParameterSymbolValueU
Low RDS on P Channel MOSFET Lead Free GOODWORK 3139K GK Designed for Ultra Small Portable Electronics
Product OverviewP-Channel MOSFET, Lead Free Product, Surface Mount Package. Features low RDS(on) and operated at low logic level gate drive. Ideal for load/power switching, interfacing, logic switching, and battery management for ultra-small portable electronics.Product AttributesPackage: SOT-723Type: P-Channel MOSFETLead Free ProductAcquiredTechnical SpecificationsParameterSymbolMin.Max.UnitConditionsDrain-Source VoltageV(BR)DSS-20VVGS = 0V, ID =-250AZero Gate Voltage Drain
Power MOSFET GOODWORK 20N03 featuring low gate charge and advanced trench technology for power switching
Product OverviewThe 20N03 N-channel MOSFETs offer excellent RDS(on) and gate charge, making them ideal for synchronous buck converter applications. These devices meet RoHS and Green Product requirements, are 100% EAS guaranteed, and have full function reliability approval. They feature advanced high cell density trench technology, super low gate charge, and are available as Green Devices.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor:
High density cell design transistor SI2302 with low RDS ON and high saturation current capability
Product OverviewThe SI2302 is a voltage-controlled small signal switch featuring a high-density cell design for low RDS(ON). It is rugged, reliable, and offers high saturation current capability, making it suitable for high-density applications. This N-Channel Enhancement Mode Field Effect Transistor is designed for efficient switching.Product AttributesMarking Type number: SI2302Marking code: A2SHBPackage: SOT-23Technical SpecificationsParameterSymbolTest ConditionMinTypMaxU
P channel MOSFET Guangdong Hottech AO4435 with ultra low gate charge and UL 94V 0 flammability rating
Product OverviewThe AO4435 is a low voltage P-channel MOSFET designed for load switch and PWM applications. It features ultra-low on-resistance and ultra-low gate charge, offering high efficiency and performance.Product AttributesBrand: AOS (implied by AOS logo and text)Product Type: Low Voltage MOSFET (P-Channel)Package: SOP-8Case Material: Molded PlasticFlammability Classification: UL 94V-0Origin: SHENZHEN HOTTECH ELECTRONICS CO.,LTD (implied by copyright and email
Low Ciss and fast switching N Channel MOSFET GOODWORK 5N65 designed for demanding power applications
Product Overview The 5N65 is an N-Channel Enhancement Mode MOSFET designed for high-performance applications. It offers a 650V breakdown voltage and a continuous drain current of 5A, with a pulsed current capability of 10A. Key advantages include low gate charge, low Ciss, fast switching speeds, and improved dv/dt capability. This MOSFET is 100% avalanche tested, making it suitable for demanding power electronics designs. Product Attributes Brand: Not specified Origin: Not
power switching MOSFET Guangdong Hottech AO3420 with low on resistance and compact surface mount design
Product OverviewThe AO3420 is an N-channel low voltage MOSFET designed for PWM and load switch applications. It features ultra-low on-resistance, making it efficient for various power management tasks. This surface mount device comes in a SOT-23 package.Product AttributesBrand: SHENZHEN HOTTECH ELECTRONICS CO.,LTDCase Material: Molded PlasticUL Flammability Classification Rating: 94V-0Technical SpecificationsParameterSymbolValueUnitConditionsDrain-source voltageVDS20VGate
MOSFET designed for load switch applications GOODWORK SI2308 offers low resistance and robust operation
Product OverviewThe SI2308 is a high cell density trenched N-channel MOSFET designed for small power switching and load switch applications. It offers excellent RDSON and efficiency, meeting RoHS and Green Product requirements with full function reliability.Product AttributesBrand: DEMACHELCertifications: RoHS, Green Device AvailableTechnical SpecificationsParameterSymbolConditionMin.Typ.Max.UnitsDrain-Source VoltageVDSS60VGate-Source VoltageVGSS±20VContinuous Drain
Durable power switching device Guangdong Hottech SI2305 P Channel MOSFET with molded plastic housing
Product OverviewThe SI2305 is a P-Channel MOSFET featuring a high-density cell design for extremely low RDS(ON). It is rugged and reliable, housed in a molded plastic case. This device is suitable for various applications requiring efficient power switching.Product AttributesBrand: GUANGDONG HOTTECH INDUSTRIAL CO., LTDOrigin: Not specifiedMaterial: Molded PlasticColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnit
GOODWORK 9926A GK 20V N Channel Trench MOSFET Designed for Power Management and PWM Applications
Product OverviewThe 9926A is a 20V N-Channel Trench Power MOSFET designed for load switch and PWM applications. It features low gate charge, 100% UIS and DVDS tested, and high power and current handling capability. This lead-free product offers enhanced performance for various power management tasks.Product AttributesBrand: 9926ACertifications: Lead free product is acquiredTechnical SpecificationsSymbolParameterConditionsMinTypMaxUnitVDSDrain-Source Voltage(VGS=0V)20VVGSGate
Power Field Effect Transistor With Low On Resistance Goodwork 2SK3541 GK N Channel Enhancement Mode
Product OverviewThese N-Channel enhancement mode power field effect transistors utilize trench DMOS technology, optimized for minimal on-state resistance, superior switching performance, and high energy pulse withstand capability in avalanche and commutation modes. They are well-suited for high efficiency fast switching applications.Product AttributesBrand: 2SK3541Certifications: Green Device AvailableTechnical SpecificationsSymbolParameterConditionsMin.Typ.Max.UnitBVDSSDrain
Avalanche tested N Channel MOSFET GOODWORK 7N65F with low gate charge and fast switching capability
Product OverviewThe 7N65F is a N-Channel MOSFET designed for high-voltage applications. It features low gate charge, low Ciss, fast switching, and improved dv/dt capability, making it suitable for various power switching applications. The device is 100% avalanche tested.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolITO-220AB RatingTO-252 RatingUnitTest
