Single FETs, MOSFETs
Power Management P Channel MOSFET Guangdong Hottech AO3401 with High Continuous Drain Current Rating
AO3401 P-Channel MOSFET The AO3401 is a P-Channel MOSFET designed with a high-density cell structure for extremely low RDS(ON). It offers exceptional on-resistance and maximum DC current capability, making it suitable for various power management applications. Product Attributes Brand: GUANGDONG HOTTECH INDUSTRIAL CO., LTD Type: Plastic-Encapsulated MOSFET Package: SOT-23 Marking: A19T Technical Specifications Parameter Symbol Test Condition Min Typ Max Unit Maximum Ratings
Voltage controlled switch GOODWORK PD BSS84 featuring rugged design and low RDS ON for electronics
Product OverviewThe BSS84 is a voltage-controlled small signal switch designed with a high-density cell structure for low RDS(ON). It offers ruggedness, reliability, and high saturation current capability, making it suitable for various applications.Product AttributesMarking Type: BSS84Marking Code: PDTechnical SpecificationsParameterSymbolConditionMinTypMaxUnitDrain-source breakdown voltageV(BR)DSSVGS = 0V, ID =-250A-50VVDS =-50V,VGS = 0V-15AVDS =-25V,VGS = 0V-0.1AGate-body
Energy P channel MOSFET Guangdong Hottech BSS84 suitable for fast switching electronic applications
Product OverviewThe BSS84 is a P-CHANNEL MOSFET designed for energy efficiency and high-speed switching. It features a low threshold voltage, making it suitable for various electronic applications requiring fast response times and reduced power consumption.Product AttributesBrand: SHENZHEN HOTTECH ELECTRONICS CO.,LTDCase Material: Molded plasticFlammability Classification: UL 94V-0Marking: B84Technical SpecificationsParameterSymbolValueUnitConditionsDrain-source voltageVDS
switching N Channel transistor GOODWORK AO3404A GK suitable for load switch and handheld instrument
Product OverviewThese N-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology, specifically engineered to minimize on-state resistance, deliver superior switching performance, and withstand high energy pulses in avalanche and commutation modes. They are well-suited for high efficiency fast switching applications.Product AttributesBrand: AOModel: AO3404ATechnology: Trench DMOSDevice Type: N-Channel enhancement mode power field effect
Synchronous buck converter P channel MOSFET GOODWORK SI2305 offering power management with trench technology
Product OverviewThe SI2305 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(on) and gate charge, meeting RoHS and Green Product requirements with full reliability. This device utilizes advanced high cell density Trench technology for superior performance and efficiency.Product AttributesBrand: DEMACHELCertifications: RoHS, Green ProductTechnical SpecificationsSymbolParameterConditionMin.Typ.Max
High Voltage MOSFET GOODWORK 18N65F with 0.41 Ohm On Resistance and 650V Drain Source Voltage Rating
Product OverviewThe 18N65F is an N-Channel Enhancement Mode MOSFET designed for high-voltage applications. It features a 650V drain-source voltage, a low on-resistance of 0.41 (Typ.) at VGS = 10V, ID = 9A, and fast switching characteristics with improved dv/dt capability. This MOSFET is 100% avalanche tested and is suitable for demanding power applications.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not
Power MOSFET GOODWORK 20N50F Featuring Low On Resistance and Enhanced dv dt Capability for Electronics
Product OverviewThe 20N50F is an N-Channel Power MOSFET designed for high-efficiency power applications. It features low on-resistance (RDS(on)), low gate charge, and improved dv/dt capability, making it suitable for demanding applications like LCD/LED/PDP TVs, lighting, and uninterruptible power supplies. This RoHS-compliant device is 100% avalanche tested for enhanced reliability.Product AttributesCase: Molded plastic bodyTerminals: Solder plated, solderable per MIL-STD
20 Volt Drain Source Voltage N Channel MOSFET GOODWORK SI2312 Suitable for Power Conversion Circuits
Product OverviewThe SI2312 is an N-Channel 20-V (D-S) MOSFET designed for DC/DC converters and load switching in portable applications. It features TrenchFET Power MOSFET technology, offering excellent performance characteristics.Product AttributesBrand: DEMACHELModel: SI2312Type: N-Channel MOSFETPackage: SOT-23Technical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-Source VoltageVDS20VGate-Source VoltageVGS±8.0VContinuous Drain CurrentIDt=5s6APulsed Drain
High current MOSFET GOODWORK AO4410-GK designed for synchronous buck converters and power management
Product OverviewThe AO4410 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge, meets RoHS and Green Product requirements, and is 100% EAS guaranteed with full function reliability approval. This device provides fast switching capabilities and is suitable for various power management solutions.Product AttributesBrand: AOProduct Type: N-Ch Fast Switching MOSFETCertifications: RoHS,
Rugged N Channel Enhancement Mode Field Effect Transistor GOODWORK SI2310 for Switching Applications
Product OverviewThe SI2310 is an N-Channel Enhancement Mode Field Effect Transistor designed for voltage-controlled small signal switching applications. It features a high-density cell design for low RDS(ON), rugged and reliable construction, and high saturation current capability. This transistor is suitable for applications requiring efficient power management and signal control.Product AttributesBrand: DEMACHELType: SOT-23Marking Code: S10Technical SpecificationsParameterS
N Channel MOSFET 650V HUAKE SMD7N65 with Fast Switching Low Gate Charge and Avalanche Performance
Product OverviewThe SMD7N65 is a 650V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It features low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, offering efficient and reliable performance.Product AttributesBrand: HUAKE semiconductorsProduct Code: SMD7N65Date: 2017.08Technical SpecificationsSymbolParameterTest ConditionsMinTy
load switch P Channel MOSFET Guangdong Hottech AO3415 with low gate voltage operation and minimal RDS ON resistance
Product OverviewThe AO3415 is a P-Channel MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 1.8V. This device is suitable for load switch applications.Product AttributesBrand: GUANGDONG HOTTECH INDUSTRIAL CO., LTDProduct Name: AO3415Package: SOT-23Technical SpecificationsParameterSymbolConditionsMinTypMaxUnitsDrain-Source Breakdown VoltageBVDSSID=-250 A, VGS=0V-20VZero Gate Voltage Drain
power conversion device GOODWORK AO4828-GK trenched N-channel MOSFET with low gate charge and RDSon
Product OverviewThe AO4828 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(on) and gate charge characteristics, contributing to efficient power conversion. This product meets RoHS and Green Product standards, with Green Device availability.Product AttributesCertifications: RoHS, Green Product, Green Device AvailableTechnical SpecificationsSymbolParameterMin.Typ.Max.UnitsTest ConditionV(BR)DSSDrain
Low RDS ON transistor GOODWORK AO3400A N channel enhancement mode for dependable electronic applications
Product OverviewThe AO3400A is a voltage-controlled, N-Channel Enhancement Mode Field Effect Transistor designed for high-density cell applications. It offers low RDS(ON), making it suitable for small signal switching applications. Key features include a rugged and reliable design with high saturation current capability, making it a dependable component for various electronic circuits.Product AttributesMarking Type number: AO3400AMarking code: AO9TPackage: SOT-23-3LTechnical
Power Field Effect Transistor Featuring Trench DMOS Technology GOODWORK 2SK3018 N Channel Enhancement Mode Device
Product OverviewThese N-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology. This technology is optimized for minimal on-state resistance, superior switching performance, and robust high energy pulse handling in avalanche and commutation modes. They are ideal for high efficiency, fast switching applications.Product AttributesBrand: DEMACHELModel: 2SK3018Technology: Trench DMOSDevice Type: N-Channel Enhancement Mode Power Field
High cell density N channel MOSFET GOODWORK 50N03DF offering low RDSON and gate charge for synchronous buck converters
Product OverviewThe 50N03DF is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDSON and gate charge, with advantages including a green device option, low gate charge, and reduced Cdv/dt effect due to advanced trench technology. It meets RoHS and Green Product standards.Product AttributesCertifications: RoHS, Green ProductTechnical SpecificationsParameterSymbolConditionMin.Typ.Max.UnitDrain-Source
Rugged N Channel MOSFET GOODWORK AO3402 with High Saturation Current and Low Gate Threshold Voltage
Product OverviewThe AO3402 is an N-Channel Enhancement Mode Field Effect Transistor designed for voltage-controlled small signal switching applications. It features a high-density cell design for low RDS(ON), making it rugged and reliable with high saturation current capability.Product AttributesMarking Type number: AO3402Marking code: A29TPackage: SOT-23Technical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitSTATIC CHARACTERISTICSDrain-source breakdown voltageVGS =
Durable Power MOSFET GOODWORK 60N04DF N Channel Device with Low Static Resistance and Fast Switching
Product OverviewThe 60N04DF is a high-performance N-Channel MOSFET featuring Advanced Trench MOS Technology. It offers 100% EAS Guaranteed, fast switching speed, and is a green device available for high-frequency switching and synchronous rectification applications. It is ideal for DC/DC converters.Product AttributesBrand: (Not specified)Origin: (Not specified)Material: (Not specified)Color: Green Device AvailableCertifications: (Not specified)Technical SpecificationsSymbolPa
N channel power MOSFET Hangzhou Silan Microelectronics SVF18N65F designed for power management and motor control
Product Overview The SVF18N65F/T/PN is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This advanced technology minimizes on-state resistance, enhances switching performance, and provides superior withstand capability for high energy pulses in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers. Product
Low On Resistance Power Management MOSFET Guangdong Hottech SI2300 Ideal for Load Switch Circuits
Product OverviewThis N-Channel Low Voltage MOSFET is designed for low power DC-to-DC converter and load switch applications. It features ultra-low on-resistance, making it an efficient choice for power management circuits.Product AttributesBrand: SHENZHEN HOTTECH ELECTRONICS CO.,LTDModel: SI2300Package: SOT-23Case Material: Molded PlasticFlammability Classification: UL 94V-0Weight: 0.008 grams (approximate)Email: hkt@heketai.comTechnical SpecificationsParameterSymbolValueUnit
