Single FETs, MOSFETs
Power MOSFET GOODWORK 16N65F Featuring High Voltage Rating and 100 Percent Avalanche Tested for Operation
16N65F N-Channel Enhancement Mode MOSFET (FULLY INSULATED)The 16N65F is a fully insulated N-Channel Enhancement Mode MOSFET designed for high-performance applications. It offers a 650V voltage rating and 16A continuous drain current, with a low typical on-resistance of 0.48. Key features include ...
High cell density trenched MOSFET GOODWORK AO3422 offering power switching and load switch capabilities
Product OverviewThe AO3422 is a high cell density trenched N-channel MOSFET designed for efficient power switching and load switch applications. It offers excellent RDS(ON) and efficiency, meeting RoHS and Green Product requirements with full functional reliability.Product AttributesGreen Device ...
Power MOSFET Hangzhou Silan Microelectronics SVF740T featuring planar high voltage VDMOS process technology
Product DescriptionThe SVF740T/F/MJ is an N-channel enhancement mode high-voltage power MOSFET manufactured using Silan's F-CellTM planar high-voltage VDMOS process technology. This advanced process and cell structure result in low on-resistance, superior switching performance, and very high ...
High frequency switching MOSFET Guangdong Hottech AO4406B with low voltage rating and low resistance
Product OverviewThe AO4406 is a low voltage N-channel MOSFET designed for high-frequency switching applications. It features ultra-low on-resistance, making it suitable for boost converters and synchronous rectifiers. This surface mount device comes in a SOP-8 package.Product AttributesBrand: ...
P channel MOSFET GOODWORK SI2305A optimized for synchronous buck converter efficiency and performance
Product OverviewThe SI2305A is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(on) and gate charge characteristics, meeting RoHS and Green Product requirements with full function reliability. This device is suitable for ...
load switching P Channel TrenchFET Power MOSFET High Diode HD2301 for portable devices and DC DC converters
Product Overview The HD2301 is a P-Channel TrenchFET Power MOSFET from High Diode Semiconductor, designed for efficient load switching in portable devices and DC/DC converters. It offers excellent RDS(on) and low gate charge, contributing to its performance in power applications. Product Attributes ...
Trench DMOS N Channel MOSFET GOODWORK BSS138W designed for fast switching and energy pulse withstand
Product OverviewThese N-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology, offering minimized on-state resistance, superior switching performance, and high energy pulse withstand capability in avalanche and commutation modes. They are well-suited for ...
Power Electronics MOSFET Guangdong Hottech HKTD4N65 Featuring Molded Plastic Case and TO 252 Package
Product OverviewThis N-CHANNEL Power MOSFET features a high-density cell design for ultra-low on-resistance and high performance. It is designed for applications requiring high voltage and current capabilities, with a fully characterized avalanche voltage and current rating. The MOSFET comes in a TO...
Voltage Controlled N Channel Transistor GOODWORK BSS139 with High Density Cell Design and Ruggedness
Product OverviewThe BSS139 is an N-Channel Enhancement Mode Field Effect Transistor designed for voltage-controlled small signal switching applications. It features a high-density cell design for low RDS(ON), ruggedness, reliability, and high saturation current capability. This transistor is ...
Power Electronics MOSFET GOODWORK 12N65F Featuring 650V Breakdown Voltage and Fast Switching Capability
Product OverviewThe 12N65F is an N-Channel Enhancement Mode MOSFET designed for high-voltage applications. It offers a breakdown voltage of 650V and a continuous drain current of 12A, with a low on-state resistance of 0.67 (Typ.) at VGS = 10V, ID =6A. Key features include fast switching, improved dv...
High Energy Pulse Withstand N Channel MOSFET GOODWORK AO4882 GK Optimized for Switching Performance
Product OverviewThese N-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology, optimized for minimal on-state resistance, superior switching performance, and high energy pulse withstand capability in avalanche and commutation modes. They are well-suited for ...
High Cell Density MOSFET GOODWORK 60N03 TO 252 with Low Gate Charge and Static Drain Source Resistance
Product Overview The 60N03 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliabilit...
N Channel Enhancement Mode MOSFET GOODWORK 4N65 designed for fast switching and power management
Product OverviewThe 4N65 is an N-Channel Enhancement Mode MOSFET designed for efficient power switching applications. It features low gate charge, low Ciss, and fast switching capabilities, making it suitable for various electronic circuits. The device is 100% avalanche tested and offers improved dv...
Low Gate Charge P Channel MOSFET High Diode BSS84 Designed For Portable Devices And DC DC Converters
Product Overview The BSS84 is a P-Channel MOSFET in a SOT-23 package, designed with Trench Technology for high performance. It features low gate charge and is compliant with RoHS standards. This MOSFET is suitable for load switching in portable devices and DC/DC converters. Product Attributes Brand: ...
Dual P Channel Power MOSFET 30V 5.5A Drain Current GOODWORK 4953 GK for Fast Switching Applications
Product OverviewThese Dual P-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology, specifically engineered to minimize on-state resistance, deliver superior switching performance, and provide robust high energy pulse handling in avalanche and commutation ...
Power MOSFET GOODWORK 5P04 P channel Enhancement Mode featuring low gate charge and stable operation
Product OverviewThe 5P04 is a P-channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It offers excellent RDS(ON) and low gate charge, making it suitable for PWM applications, load switching, and power management. This lead-free product is designed for high performance and ...
Synchronous Buck Converter P Channel MOSFET GOODWORK AO4407 with Low Gate Charge and Excellent RDS
Product OverviewThe AO4407 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, contributing to efficient power conversion. This device is RoHS and Green Product compliant, and is 100% EAS guaranteed ...
Durable power MOSFET GREENMICRO GM4N60GT with low leakage current and fast switching characteristics
Product OverviewThe 4N60 is a high voltage MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is suitable for use in power supplies, ...
SOT 23 Package P Channel Low Voltage MOSFET Guangdong Hottech SI2309DS for Power Management Circuits
LOW VOLTAGE MOSFET (P-CHANNEL)This P-Channel Low Voltage MOSFET offers low on-resistance and is designed for DC to DC converter and load switch applications. It is a surface mount device in a SOT-23 package.Product AttributesBrand: SHENZHEN HOTTECH ELECTRONICS CO.,LTDModel: SI2309Package: SOT-23Case ...
Power Field Effect Transistor Goodwork AO4606 With Avalanche And Commutation Mode For Fast Switching
Product OverviewThe AO4606 is an N+P dual channel enhancement mode power field effect transistor utilizing advanced trench DMOS technology. This technology is optimized for minimal on-state resistance, superior switching performance, and high energy pulse withstand capability in avalanche and ...
