Single FETs, MOSFETs
Power MOSFET GOODWORK 16N65F Featuring High Voltage Rating and 100 Percent Avalanche Tested for Operation
16N65F N-Channel Enhancement Mode MOSFET (FULLY INSULATED)The 16N65F is a fully insulated N-Channel Enhancement Mode MOSFET designed for high-performance applications. It offers a 650V voltage rating and 16A continuous drain current, with a low typical on-resistance of 0.48. Key features include fast switching speeds, improved dv/dt capability, and 100% avalanche testing, making it suitable for demanding power supply applications.Product AttributesBrand: Not specifiedOrigin:
High cell density trenched MOSFET GOODWORK AO3422 offering power switching and load switch capabilities
Product OverviewThe AO3422 is a high cell density trenched N-channel MOSFET designed for efficient power switching and load switch applications. It offers excellent RDS(ON) and efficiency, meeting RoHS and Green Product requirements with full functional reliability.Product AttributesGreen Device AvailableSuper Low Gate ChargeExcellent Cdv/dt effect declineAdvanced high cell density Trench technologyTechnical SpecificationsSymbolParameterConditionsMin.Typ.Max.UnitAbsolute
Power MOSFET Hangzhou Silan Microelectronics SVF740T featuring planar high voltage VDMOS process technology
Product DescriptionThe SVF740T/F/MJ is an N-channel enhancement mode high-voltage power MOSFET manufactured using Silan's F-CellTM planar high-voltage VDMOS process technology. This advanced process and cell structure result in low on-resistance, superior switching performance, and very high avalanche breakdown capability. It is widely applicable in AC-DC switching power supplies, DC-DC converters, and high-voltage H-bridge PWM motor drivers.Product AttributesBrand: (Silan
High frequency switching MOSFET Guangdong Hottech AO4406B with low voltage rating and low resistance
Product OverviewThe AO4406 is a low voltage N-channel MOSFET designed for high-frequency switching applications. It features ultra-low on-resistance, making it suitable for boost converters and synchronous rectifiers. This surface mount device comes in a SOP-8 package.Product AttributesBrand: GUANGDONG HOTTECH INDUSTRIAL CO.,LTDProduct Code: AO4406Package Type: SOP-8Material: Molded PlasticFlammability Classification: UL 94V-0Moisture Sensitivity: Level 1 per J-STD-020Marking
P channel MOSFET GOODWORK SI2305A optimized for synchronous buck converter efficiency and performance
Product OverviewThe SI2305A is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(on) and gate charge characteristics, meeting RoHS and Green Product requirements with full function reliability. This device is suitable for applications demanding efficient power conversion.Product AttributesBrand: SI (implied from part number)Certifications: RoHS, Green ProductTechnical SpecificationsSymbolParameterRating
load switching P Channel TrenchFET Power MOSFET High Diode HD2301 for portable devices and DC DC converters
Product Overview The HD2301 is a P-Channel TrenchFET Power MOSFET from High Diode Semiconductor, designed for efficient load switching in portable devices and DC/DC converters. It offers excellent RDS(on) and low gate charge, contributing to its performance in power applications. Product Attributes Brand: High Diode Semiconductor Marking: SOT-23 Package: SOT-23 Plastic-Encapsulated MOSFET Technology: TrenchFET Power MOSFET Technical Specifications Parameter Symbol Value Unit
Power Electronics MOSFET Guangdong Hottech HKTD4N65 Featuring Molded Plastic Case and TO 252 Package
Product OverviewThis N-CHANNEL Power MOSFET features a high-density cell design for ultra-low on-resistance and high performance. It is designed for applications requiring high voltage and current capabilities, with a fully characterized avalanche voltage and current rating. The MOSFET comes in a TO-252 package, suitable for various power electronics applications.Product AttributesBrand: HKTD4N65Origin: SHENZHEN HOTTECH ELECTRONICS CO.,LTDCase Material: Molded PlasticFlammabi
Trench DMOS N Channel MOSFET GOODWORK BSS138W designed for fast switching and energy pulse withstand
Product OverviewThese N-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology, offering minimized on-state resistance, superior switching performance, and high energy pulse withstand capability in avalanche and commutation modes. They are well-suited for high efficiency fast switching applications, including notebook load switches, battery protection, and hand-held instruments.Product AttributesBrand: BSS138WDevice Type: N-Channel
Voltage Controlled N Channel Transistor GOODWORK BSS139 with High Density Cell Design and Ruggedness
Product OverviewThe BSS139 is an N-Channel Enhancement Mode Field Effect Transistor designed for voltage-controlled small signal switching applications. It features a high-density cell design for low RDS(ON), ruggedness, reliability, and high saturation current capability. This transistor is suitable for high-density applications.Product AttributesMarking Type number: BSS139Marking code: M8WPackage: SOT-23Technical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain
Power Electronics MOSFET GOODWORK 12N65F Featuring 650V Breakdown Voltage and Fast Switching Capability
Product OverviewThe 12N65F is an N-Channel Enhancement Mode MOSFET designed for high-voltage applications. It offers a breakdown voltage of 650V and a continuous drain current of 12A, with a low on-state resistance of 0.67 (Typ.) at VGS = 10V, ID =6A. Key features include fast switching, improved dv/dt capability, and 100% avalanche tested, making it suitable for demanding power supply applications.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not
High Energy Pulse Withstand N Channel MOSFET GOODWORK AO4882 GK Optimized for Switching Performance
Product OverviewThese N-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology, optimized for minimal on-state resistance, superior switching performance, and high energy pulse withstand capability in avalanche and commutation modes. They are well-suited for high efficiency fast switching applications.Product AttributesBrand: AO (Implied from product name AO4882)Certifications: Green Device AvailableTechnical SpecificationsSymbolParame
High Cell Density MOSFET GOODWORK 60N03 TO 252 with Low Gate Charge and Static Drain Source Resistance
Product Overview The 60N03 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approved, featuring super low gate charge and an advanced high cell density trench technology. Product Attributes Certifications: RoHS, Green Product Technical Specifications
N Channel Enhancement Mode MOSFET GOODWORK 4N65 designed for fast switching and power management
Product OverviewThe 4N65 is an N-Channel Enhancement Mode MOSFET designed for efficient power switching applications. It features low gate charge, low Ciss, and fast switching capabilities, making it suitable for various electronic circuits. The device is 100% avalanche tested and offers improved dv/dt capability, ensuring reliability and performance. It is packaged in a TO-252 package.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor:
Low Gate Charge P Channel MOSFET High Diode BSS84 Designed For Portable Devices And DC DC Converters
Product Overview The BSS84 is a P-Channel MOSFET in a SOT-23 package, designed with Trench Technology for high performance. It features low gate charge and is compliant with RoHS standards. This MOSFET is suitable for load switching in portable devices and DC/DC converters. Product Attributes Brand: HIGH DIODE SEMICONDUCTOR Package: SOT-23 Technology: Trench Technology MOSFET Compliance: RoHS Technical Specifications Parameter Symbol Test Condition Value Unit Drain - Source
Dual P Channel Power MOSFET 30V 5.5A Drain Current GOODWORK 4953 GK for Fast Switching Applications
Product OverviewThese Dual P-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology, specifically engineered to minimize on-state resistance, deliver superior switching performance, and provide robust high energy pulse handling in avalanche and commutation modes. These devices are ideal for high-efficiency, fast-switching applications.Features30V, -5.5A, RDS(ON) = 45m@VGS = -10VFast switchingGreen Device AvailableSuitable for -4.5V
Power MOSFET GOODWORK 5P04 P channel Enhancement Mode featuring low gate charge and stable operation
Product OverviewThe 5P04 is a P-channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It offers excellent RDS(ON) and low gate charge, making it suitable for PWM applications, load switching, and power management. This lead-free product is designed for high performance and efficiency.Product AttributesBrand: DEMACHELProduct Code: 5P04Technology: P-channel Enhancement Mode Power MOSFET, Advanced Trench TechnologyCertifications: Lead free product is
Synchronous Buck Converter P Channel MOSFET GOODWORK AO4407 with Low Gate Charge and Excellent RDS
Product OverviewThe AO4407 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, contributing to efficient power conversion. This device is RoHS and Green Product compliant, and is 100% EAS guaranteed with full function reliability.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: RoHS, Green ProductTechnical
Durable power MOSFET GREENMICRO GM4N60GT with low leakage current and fast switching characteristics
Product OverviewThe 4N60 is a high voltage MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is suitable for use in power supplies, PWM motor controls, high-efficiency DC to DC converters, and bridge circuits.Product AttributesBrand: GREENMICROProduct Model: 4N60Revision: V1.3Technical SpecificationsParameterDesc
SOT 23 Package P Channel Low Voltage MOSFET Guangdong Hottech SI2309DS for Power Management Circuits
LOW VOLTAGE MOSFET (P-CHANNEL)This P-Channel Low Voltage MOSFET offers low on-resistance and is designed for DC to DC converter and load switch applications. It is a surface mount device in a SOT-23 package.Product AttributesBrand: SHENZHEN HOTTECH ELECTRONICS CO.,LTDModel: SI2309Package: SOT-23Case Material: Molded PlasticFlammability Classification: UL 94V-0Weight: 0.008 grams (approximate)Contact: E-mail:hkt@heketai.comTechnical SpecificationsParameterSymbolValueUnitCondit
Power Field Effect Transistor Goodwork AO4606 With Avalanche And Commutation Mode For Fast Switching
Product OverviewThe AO4606 is an N+P dual channel enhancement mode power field effect transistor utilizing advanced trench DMOS technology. This technology is optimized for minimal on-state resistance, superior switching performance, and high energy pulse withstand capability in avalanche and commutation modes. It is well-suited for high efficiency, fast switching applications, including 4.5V gate drive scenarios.Product AttributesBrand: AOType: N+P dual Channel enhancement
