Single FETs, MOSFETs

Product OverviewThe AO3404 is a low voltage N-channel MOSFET designed for PWM and load switch applications. It features ultra low on-resistance, making it suitable for efficient power management. This surface mount device comes in a SOT-23 package.Product AttributesBrand: SHENZHEN HOTTECH ELECTRONICS CO.,LTDCase Material: Molded PlasticUL Flammability Classification Rating: 94V-0Technical SpecificationsParameterSymbolValueUnitConditionsDrain-source voltageVDS30VGate-source

Product OverviewThe 10N65F is an N-Channel Enhancement Mode MOSFET designed for high-voltage applications. It features a 650V breakdown voltage, 10A continuous drain current, and low on-resistance (0.87 Typ.). Key advantages include fast switching, improved dv/dt capability, and 100% avalanche tested, making it suitable for Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), and Power Factor Correction (PFC) circuits.Product AttributesBrand: Not

Product OverviewThe SI2306 is an N-Channel Enhancement Mode Field Effect Transistor designed for voltage-controlled small signal switching. It features a high-density cell design for low RDS(ON), a rugged and reliable construction, and high saturation current capability. This transistor is suitable for applications requiring efficient and stable switching performance.Product AttributesMarking Type number: SI2306Marking code: A6SHBPackage: SOT-23Technical SpecificationsParamet

Product OverviewThese N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Key features include 20V, 0.8A rating, RDS(ON) = 110m@VGS = 4.5V, improved dv/dt

Product OverviewThese N-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology. This technology is specifically designed to minimize on-state resistance, deliver superior switching performance, and provide robust high energy pulse handling in avalanche and commutation modes. These devices are ideal for high efficiency, fast switching applications.Product AttributesBrand: DEMACHELDevice Type: SI2304DDSTechnology: Trench DMOSMode: N

Product OverviewThis N-CHANNEL Power MOSFET, model HKTD20N06, is designed for high-performance power applications. It features a high density cell design for ultra-low on-resistance and is fully characterized for avalanche voltage and current. The device is housed in a TO-252 package, suitable for various electronic circuits.Product AttributesBrand: SHENZHEN HOTTECH ELECTRONICS CO.,LTDOrigin: ShenzhenCase Material: Molded PlasticFlammability: UL 94V-0Marking: D20N06Email: hkt

Product OverviewThe SVF7N65T/F/S is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This advanced technology minimizes on-state resistance, enhances switching performance, and provides superior high-energy pulse withstand capability in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.Product AttributesBrand

Product OverviewThese P-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology, specifically engineered to minimize on-state resistance, deliver superior switching performance, and provide robust high energy pulse handling in avalanche and commutation modes. They are ideally suited for high efficiency, fast switching applications.Product AttributesBrand: DEMACHELDevice Type: SOT-23Technology: Trench DMOSFeatures: Improved dv/dt

Product Overview The BSS84W is a P-CHANNEL MOSFET designed for miniature surface mount applications. Its low power loss and energy efficiency make it ideal for power management circuitry in portable and battery-powered products. Key features include a low threshold voltage and high-speed switching capability, all within a space-saving package. Product Attributes Brand: Not specified Origin: Not specified Material: Not specified Color: Not specified Certifications: Not

Product OverviewThe AO3416 is a low voltage N-channel MOSFET designed for load switch and PWM applications. It features ultra low on-resistance and ESD protection, making it suitable for various electronic circuits. This surface mount device is available in a SOT-23 package.Product AttributesBrand: SHENZHEN HOTTECH ELECTRONICS CO.,LTDCase Material: Molded PlasticFlammability Classification: UL 94V-0Package: SOT-23Technical SpecificationsParameterSymbolValueUnitConditionsDrain

N-CHANNEL Power MOSFET This N-CHANNEL Power MOSFET features a high-density cell design for ultra-low on-resistance and a fully characterized avalanche voltage and current capability. It is designed for efficient power management applications. Product Attributes Brand: HOTTECH Origin: SHENZHEN HOTTECH ELECTRONICS CO.,LTD Case Material: Molded Plastic Flammability: UL 94V-0 Marking: D50N06 Technical Specifications Parameter Symbol Condition Min Typ Max Unit FEATURES Drain

Product Description The 3134K is an N-Channel MOSFET designed for high-side switching applications. It offers low on-resistance and a low threshold voltage, making it suitable for driving relays, solenoids, and various load types in battery-operated systems, power supply converter circuits, lamps, hammers, and displays. Its fast switching speed is advantageous for applications requiring quick response times. Product Attributes Brand: Not specified Origin: Not specified

Product OverviewThe AO3416 is a N-Channel Enhancement Mode Field Effect Transistor designed for high-density cell applications, offering low RDS(ON). It functions as a voltage-controlled small signal switch, characterized by its ruggedness, reliability, and high saturation current capability. Suitable for various electronic applications requiring efficient switching.Product AttributesBrand: DEMACHELType: AO3416Package: SOT-23Technical SpecificationsParameterSymbolTest

Product OverviewThe DMP1045U is a voltage-controlled small signal switch with a high density cell design for low RDS(ON). It is rugged, reliable, and offers high saturation current capability, making it suitable for various applications requiring efficient switching.Product AttributesBrand: DEMACHELType: SOT-23 Plastic-Encapsulate MOSFETSMarking Type number: DMP1045U-GKMarking code: 3415Technical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-source breakdown

Product OverviewThe SVF25NE50PN is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary F-CellTM structure VDMOS technology. It features an improved planar stripe cell and guard ring terminal designed to minimize on-state resistance, enhance switching performance, and provide superior high-energy pulse handling in avalanche and commutation modes. This device is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM

Product OverviewThe 65N06 is a high-density cell N-Channel Power MOSFET designed for power switching applications. It features ultra-low RDS(on), excellent thermal dissipation, and high ESD capability, making it suitable for hard-switched and high-frequency circuits, as well as uninterruptible power supplies. The device is fully characterized for avalanche voltage and current, ensuring good stability and uniformity.Product AttributesBrand: Not specifiedOrigin: Not specifiedMa

Product OverviewThese N-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology, specifically engineered to minimize on-state resistance, deliver superior switching performance, and provide robust high energy pulse handling in avalanche and commutation modes. These devices are ideal for high efficiency, fast switching applications.Product AttributesBrand: AO3418ADevice Type: N-Channel Enhancement Mode Power Field Effect TransistorTechno

Product OverviewThe FDV303N is a 30V, single N-channel Trench MOSFET designed for fast switching applications. It features low RDS(ON) and utilizes Trench MOSFET technology. This device is Pb-Free and compliant with RoHS requirements and Halogen Free. It is suitable for various applications including low-side load switches, level shift circuits, DC-DC converters, and portable devices such as DSCs, PDAs, and cell phones.Product AttributesBrand: DEMA CHELLCertifications: Pb

Product OverviewThe BSS138 is an N-Channel Enhancement Mode Field Effect Transistor designed for high-density cell applications, offering low RDS(ON). It functions as a voltage-controlled small signal switch and is known for its ruggedness, reliability, and high saturation current capability. This transistor is suitable for various applications requiring efficient switching and low power dissipation.Product AttributesMarking Type: BSS138Marking Code: SSPackage Type: SOT

Product OverviewThe 15N10 is a high-performance N-channel MOSFET featuring extreme high cell density, offering excellent RDSON and gate charge characteristics. It is designed for synchronous buck converter applications and meets RoHS and Green Product requirements, with 100% EAS guaranteed and full function reliability approval. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density Trench technology.Product AttributesCer