Single FETs, MOSFETs

Product OverviewThe IRLML6402 is a voltage-controlled small signal switch designed for high-density cell applications, offering low RDS(ON). It is rugged, reliable, and capable of high saturation current. This MOSFET is suitable for various applications requiring efficient switching and power handling.Product AttributesBrand: DEMACHELType: SOT-23 Plastic-Encapsulate MOSFETSTechnical SpecificationsParameterSymbolRatingUnitTest ConditionsDrain-Source VoltageVDS-20VGate-Source

Product OverviewThe SMF12N65 is a 650V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It offers key advantages such as low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, making it a reliable choice for demanding power electronics designs.Product AttributesBrand: HUAKE semiconductorsProduct Code: SMF12N65Date: 2017.08Document

Product OverviewThe SVF23N50PN is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM structure VDMOS technology. It features an improved planar stripe cell and guard ring terminal designed for minimal on-state resistance, superior switching performance, and high energy pulse withstand capability in avalanche and commutation modes. This device is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor

SVS20N60FJ(K)(T)(PN)(S)(P7)D2 DP MOS Power TransistorThe SVS20N60FJ(K)(T)(PN)(S)(P7)D2 is an N-channel enhancement mode high voltage power MOSFET manufactured using Silan's DP MOS technology. It offers low conduction and switching losses, enabling high efficiency, high power density, and improved thermal performance in power converters. This device is widely applicable in hard/soft switching topologies.Product AttributesBrand: Silan MicroelectronicsOrigin: ChinaTechnical

Product OverviewThese N-Channel enhancement mode power field effect transistors utilize trench DMOS technology, optimized for minimal on-state resistance and superior switching performance. They are designed to withstand high energy pulses in avalanche and commutation modes, making them ideal for high efficiency fast switching applications. Key features include improved dv/dt capability, fast switching, and ESD protection up to 2KV. This device is available in a Green Device

Product Overview The HSBA0056 is a N-Channel Fast Switching MOSFET designed for 100V applications. It offers excellent performance with low RDS(ON) and low gate charge, making it suitable for portable equipment, battery-powered systems, and hard switching and high-speed circuits. This MOSFET is 100% EAS guaranteed and compliant with RoHS and Halogen-Free standards. Product Attributes Brand: HS-Semi Model: HSBA0056 Channel Type: N-Channel Voltage Rating: 100V Compliance: RoHS

Product OverviewThe 7N65 is a N-Channel Enhancement Mode MOSFET designed for efficient power switching applications. It features a 650V drain-source voltage rating, a continuous drain current of 7A, and low on-state resistance (RDS(ON) typ = 1.18 @VGS=10V/3.5A). Key advantages include low gate charge, low Ciss, fast switching speeds, 100% avalanche testing, and improved dv/dt capability, making it suitable for various power supply and power management circuits.Product

Product OverviewThese P-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology. This technology is optimized to minimize on-state resistance, provide superior switching performance, and ensure high energy pulse withstand capability in avalanche and commutation modes. They are well-suited for high efficiency, fast switching applications, including notebook load switches, battery protection, and hand-held instruments. Features include

Product Overview The HSH120N20 is a high-performance N-channel MOSFET featuring an advanced high cell density Trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. It is designed for power switching applications and offers excellent Cdv/dt effect decline. Product Attributes Brand: HSH

Product OverviewThe SVF2N60M/F/T/D is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary F-cellTM structure DMOS technology. It features an improved planar stripe cell and guard ring terminal designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes. This device is widely used in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor

Product OverviewThe 80N03 is an N-Channel Enhancement Mode MOSFET featuring Split Gate Trench MOSFET technology. It offers excellent package heat dissipation and a high-density cell design for low RDS(ON). This MOSFET is 100% UIS and VDS tested, making it suitable for DC-DC converters, power management functions, and industrial and motor drive applications.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not

Product OverviewThe BSS138 is an N-CHANNEL MOSFET designed for various electronic applications. It features low on-resistance, a low gate threshold voltage, and fast switching speeds, making it suitable for efficient power management. The device also offers low input/output leakage and comes in a sub-miniature SOT-23 surface mount package.Product AttributesBrand: SHENZHEN HOTTECH ELECTRONICS CO.,LTDProduct Code: BSS138Package Type: SOT-23Case Material: Molded PlasticFlammabil

Product Overview The HSBA15810C is a N-Channel 100V Fast Switching MOSFET designed for high-frequency switching applications. It features advanced high cell density Trench technology, offering super low RDS(ON) and 100% EAS Guaranteed. This MOSFET is ideal for applications such as motor drivers, Battery Management Systems (BMS), and high-frequency switching with synchronous rectification. A green device version is available. Product Attributes Brand: HS-Semi Model: HSBA15810C

Product OverviewThe IRLML0040 is a low voltage N-channel MOSFET designed for low power DC-to-DC converters and load switch applications. It features ultra low on-resistance, making it an efficient choice for surface mount devices.Product AttributesBrand: Heketa (implied from email)Origin: SHENZHEN HOTTECH ELECTRONICS CO.,LTDCase Material: Molded PlasticFlammability Classification Rating: UL 94V-0Technical SpecificationsParameterSymbolConditionMin.Typ.Max.UnitsElectrical

Product OverviewThe SVF4N70F/D is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM structure VDMOS technology. This advanced technology minimizes on-state resistance, offers superior switching performance, and provides robust high energy pulse withstand capability in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.Product AttributesBrand: Silan

Product OverviewThese N-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology, engineered to minimize on-state resistance, deliver superior switching performance, and provide robust high energy pulse withstand capability in avalanche and commutation modes. These devices are ideally suited for high efficiency, fast switching applications.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not

Product OverviewThe 40P04 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, contributing to efficient power conversion. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and features full function reliability approval. It utilizes advanced high cell density trench technology for superior performance and reduced gate charge, leading to

Product OverviewThe HKTG150N03 is an N-channel MOSFET designed for efficient power switching applications. It features low on-resistance, fast switching speeds, and easily designed drive circuits, making it suitable for paralleling and various electronic designs. This MOSFET is housed in a PDFN5x6 package.Product AttributesBrand: SHENZHEN HOTTECH ELECTRONICS CO.,LTDMarking: G150N03Case: PDFN5x6Case Material: Molded PlasticUL flammability Classification Rating: 94V-0Weight: 0

Product OverviewThe BSS84DW is a semiconductor device designed for electronic applications. It features low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speed, making it suitable for various switching and amplification tasks.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsCharacteristicSymbolMinTypMaxUnitTest ConditionMAXIMUM

Product OverviewThe DMP3098L is a voltage-controlled small signal switch featuring a high-density cell design for low RDS(ON). This rugged and reliable MOSFET offers high saturation current capability, making it suitable for various applications requiring efficient switching.Product AttributesBrand: DEMACHELType: SOT-23 Plastic-Encapsulate MOSFETSMarking Code: A79TTechnical SpecificationsParameterSymbolConditionMinTypMaxUnitAbsolute Maximum RatingsDrain-Source VoltageVDS