Single FETs, MOSFETs
Fast Switching N Channel MOSFET HUASHUO HSU0048 with RoHS Compliance and Low Gate Charge Performance
Product Overview The HSU0048 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous rectification in AC/DC quick chargers. This MOSFET is 100% EAS guaranteed and complies with RoHS and Halogen-Free standards. Product Attributes Brand: HS-Semi Model: HSU0048 Type: N-Channel Fast Switching MOSFET Compliance: RoHS and Halogen-Free Guarantee: 100% EAS Guaranteed
Power Management MOSFET HUASHUO HSU55N02 N Channel Device with High Cell Density and RoHS Compliance
Product Overview The HSU55N02 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter circuits. It offers excellent RDS(ON) and gate charge characteristics, making it suitable for power management and battery protection applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full functional reliability approval. Product Attributes Brand: HS-Semi Product
TO220FJ Package N Channel MOSFET Hangzhou Silan Microelectronics SVF10N65CFJ Ideal for DC DC Converters and Motor Drivers
Product OverviewThe SVF10N65CFJ is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM structure VDMOS technology. This advanced design offers reduced on-state resistance, superior switching performance, and enhanced robustness against high energy pulses in avalanche and commutation modes. It is widely used in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.Product AttributesBrand: Silan Microelectronic
Hangzhou Silan Microelectronics SVF4N60F N channel MOSFET for DC DC Converters and PWM Motor Drivers
Product OverviewThe SVF4N60D/F/T/M is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This technology offers reduced on-state resistance, superior switching performance, and enhanced high energy pulse handling capabilities in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.Product AttributesBrand: Silan
Low RDSon N Channel MOSFET HUASHUO HSS2N7002K 60V Fast Switching Suitable for DC DC Converters and Portable Devices
Product Overview The HSS2N7002K is a N-Channel 60V Fast Switching MOSFET designed for various electronic applications. It offers low RDS(on) and is ESD protected, making it suitable for low-side load switching, level shift circuits, DC-DC converters, and portable devices such as DSCs, PDAs, and cell phones. This product complies with RoHS requirements and is Halogen Free. Product Attributes Brand: HS-Semi Material Compliance: RoHS, Halogen Free Feature: ESD Protected Feature:
N channel power MOSFET Guangdong Hottech HKTD5N50 offers avalanche voltage and current characteristics
N-CHANNEL Power MOSFET - HKTD5N50This N-CHANNEL Power MOSFET offers high performance with features like a 500V drain-source voltage, 5A continuous drain current, and a low RDS(ON) of 1.6 (max.) at VGS=10V. Its high-density cell design ensures ultra-low on-resistance, and it is fully characterized for avalanche voltage and current. Designed for efficient power management, this MOSFET is suitable for various applications requiring robust and reliable performance.Product
electronic component Guangdong Hottech 2N7002 N channel MOSFET with stable electrical characteristics
2N7002 MOSFET (N-CHANNEL) The 2N7002 is an N-channel MOSFET designed for various electronic applications. It features low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speed, making it suitable for applications requiring efficient power handling and quick response times. Its low input/output leakage further enhances its performance in sensitive circuits. Product Attributes Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD Part Number: 2N7002
Dual P channel 60V fast switching MOSFET HUASHUO HSM6303 for synchronous buck converter applications
Product Overview The HSM6303 is a dual P-channel, 60V fast-switching MOSFET designed for high-efficiency synchronous buck converter applications. Featuring high cell density trench technology, it offers excellent RDS(ON) and low gate charge, contributing to superior performance. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full functional reliability approval. Its advanced design ensures excellent CdV/dt effect decline. Product
P Channel 100V MOSFET HUASHUO HSU0115 with Fast Switching and 100 Percent EAS Guaranteed Reliability
Product Overview The HSU0115 is a P-Channel 100V Fast Switching MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide variety of applications. This MOSFET meets RoHS and Green Product requirements, and is 100% EAS guaranteed with full function reliability approval. Key features include 100% EAS Guaranteed, Green Device availability, Super Low Gate Charge, and excellent CdV/dt effect decline. Product
Low Profile Power MOSFET Guangdong Hottech IRLML5103 P Channel Device with Fast Switching Performance
Product OverviewThe IRLML5103 is a P-Channel Power MOSFET featuring Generation V Technology for ultra-low on-resistance and a low profile (
High Current N Channel and P Channel MOSFETs HUASHUO HSBB6903 Series with Synchronous Rectification Feature
Product Overview The HSBB6903 series comprises N-Channel and P-Channel Fast Switching MOSFETs designed with Advanced Trench MOS Technology. These devices offer high current and high-speed switching capabilities, making them suitable for applications like motor control and portable equipment. Key features include 100% EAS Guaranteed and availability of Green Device options. Synchronous rectification is also supported. Product Attributes Brand: HS-Semi Technology: Advanced
power MOSFET GOODWORK 15N10 featuring low RDSon and gate charge for N channel synchronous buck converter designs
Product Overview The 15N10 is a high-performance N-channel Fast Switching MOSFET featuring extreme high cell density. It offers excellent RDS(on) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. Key advantages include super low gate charge, green device availability, excellent Cdv/dt effect decline, and advanced high cell
switching N channel MOSFET Guangdong Hottech 2SK3018 designed for and portable electronic devices
Product OverviewThe 2SK3018 is an N-channel MOSFET designed for low on-resistance and very fast switching. Its low voltage drive capability makes it ideal for portable equipment, battery management, high-speed switching, and low-power DC to DC converter applications. It comes in a sub-miniature SOT-23 surface mount package.Product AttributesBrand: SHENZHEN HOTTECH ELECTRONICS CO.,LTDOrigin: China (implied by company name and email)Material: Molded Plastic (UL flammability
High cell density trench n channel mosfet hsba3052 suitable for fast switching dc dc converter needs
Product Overview The HSBA3052 is a high cell density Trench N-Channel MOSFET designed for fast switching applications, particularly in DC/DC converters. It offers excellent RDS(ON) and low gate charge, contributing to efficient power management. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Product Attributes Brand: HS-Semi Model: HSBA3052 Channel Type: N-Channel Technology: Advanced high cell density
power Guangdong Hottech AO4407 P channel enhancement mode MOSFET with maximum drain current of 12 amperes
Product OverviewThe AO4407 is a P-CHANNEL ENHANCEMENT MODE MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. This lead-free product offers a maximum VDS of -30V and a maximum ID of -12A, with low RDS(ON) values at various gate-source voltages. It is suitable for applications requiring efficient power switching.Product AttributesBrand: SHENZHEN HOTTECH ELECTRONICS CO.,LTDProduct Name: AO4407Type: P-CHANNEL
P channel MOSFET HUASHUO HSH90P06 featuring high cell density trench technology for power management
Product Overview The HSH90P06 is a high cell density trenched P-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density trench technology.
Trenched N channel MOSFET HUASHUO HSBA4018 engineered for operation in high current power conversion
Product Overview The HSBA4018 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converters. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed and approved for full function reliability, making it suitable for demanding power conversion scenarios. Product Attributes Brand: HS-Semi Product Type: N-Ch MOSFETs
Low Gate Charge and Excellent RDS ON Guangdong Hottech 9435 P Channel Enhancement Mode Power MOSFET
Product DescriptionThe 9435 is a P-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with operation possible at gate voltages as low as 4.5V. This device is well-suited for applications such as load switching and Pulse Width Modulation (PWM).Product AttributesBrand: GUANGDONG HOTTECH INDUSTRIAL CO., LTDMaterial: Plastic-EncapsulateCertifications: Lead free product is acquiredTechnical SpecificationsPar
Power MOSFET HUASHUO HSU6014 N Channel Device with High Cell Density Trench Technology and Low RDS
HSU6014 N-Channel 60V Fast Switching MOSFETs The HSU6014 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. It offers super low gate charge and excellent CdV/dt effect decline due to its advanced high cell density trench technology. Product
Compact low resistance P channel MOSFET Guangdong Hottech SI2301 for DC to DC converter applications
Product OverviewThe SI2301 is a low voltage P-channel MOSFET designed for low power DC to DC converter and load switch applications. It features low on-resistance, making it an efficient choice for power management solutions.Product AttributesBrand: GUANGDONG HOTTECH INDUSTRIAL CO.,LTDOrigin: ChinaCase Material: Molded plasticFlammability Classification: UL 94V-0Terminal Plating: Tin platedTechnical SpecificationsParameterSymbolValueUnitConditionsFEATURESRDS(ON) @ VGS=-4.5V,
