Single FETs, MOSFETs
30V P channel MOSFET HUASHUO AO3401A fast switching device with trench technology and low gate charge
Product Overview The AO3401A is a P-channel, 30V fast switching MOSFET designed for high cell density trenched technology. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This product meets RoHS and Green Product requirement...
Power MOSFET Hangzhou Silan Microelectronics SVF4N60CAMJ for DC DC converters and motor control
Product OverviewThe SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor manufactured using Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This technology enhances on-state resistance, switching performance, and high energy pulse withstand ...
N Channel MOSFET Guangdong Hottech 2N7002K designed for consumption and fast switching in electronics
Product OverviewThe 2N7002K is an N-Channel MOSFET designed for various electronic applications. It features low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speed, making it suitable for efficient power management and signal switching. Its low input/output ...
High current P channel MOSFET HUASHUO HSM24P03 with 30V drain source voltage and fast switching speed
Product Overview The HSM24P03 is a P-channel, 30V fast switching MOSFET designed for high-performance synchronous buck converter applications. It features high cell density trench technology, offering excellent RDS(ON) and low gate charge. This device meets RoHS and Green Product requirements, is ...
600V N Channel MOSFET HUAKE SMF7N60 featuring low gate charge and fast switching for power supply design
Product OverviewThe SMF7N60 is a 600V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction. It features low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, offering ...
Durable High Current N Channel MOSFET HUASHUO HSP0076A with 100V Drain Source Voltage and Performance
Product Overview The HSP0076A is a high-performance N-Channel MOSFET designed for fast switching applications. Featuring a 100V drain-source voltage rating and exceptionally low RDS(ON), this MOSFET is ideal for motor drivers, battery management systems (BMS), and high-frequency switching circuits ...
P Channel MOSFET SOT 23 Package Featuring Guangdong Hottech AO3407 Ideal for Load Switch Applications
Product OverviewThe AO3407 is a P-Channel MOSFET utilizing advanced trench technology to achieve excellent RDS(ON) and low gate charge. It is suitable for load switch applications and Pulse Width Modulation (PWM) applications.Product AttributesBrand: GUANGDONG HOTTECH INDUSTRIAL CO., LTDProduct Name...
P channel 40 volt fast switching mosfet HUASHUO HSU100P04 with low gate charge and trench technology
Product Overview The HSU100P04 is a P-channel, 40V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This MOSFET is RoHS and Green Product compliant, with ...
Dual N channel fast switching MOSFET HUASHUO HSW2N10D featuring excellent RDS ON and power switching
Product Overview The HSW2N10D is a dual N-channel fast switching MOSFET featuring high cell density and trenched technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This MOSFET meets RoHS and Green Product requirements ...
Low On Resistance 100V N Channel MOSFET HUAKE HST502 Suitable for High Frequency Switching Mode Power
Product OverviewThe HST502 is a 100V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It offers a continuous drain current of 120A (package limit) and a low on-resistance of 4.9m (typ) at VGS=10V. ...
Durable 100V P Channel Fast Switching MOSFET HUASHUO HSH80P10 with Excellent RDS ON and Gate Charge
Product Overview The HSH80P10 is a P-Channel, 100V Fast Switching MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it suitable for a wide variety of applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS ...
Power Management N Channel MOSFET HUASHUO HSBB3072 Featuring Fast Switching and Low Gate Charge Technology
Product Overview The HSBB3072 is a N-Channel 30V Fast Switching MOSFET designed for power management applications. It features a super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology. This MOSFET is ideal for power management in desktop computers, ...
P Channel Power MOSFET Guangdong Hottech IRLML6402 Ideal for Power Sensitive Electronic Applications
OverviewThe IRLML6402 is an ultra-low on-resistance, fast-switching P-Channel Power MOSFET designed for various electronic applications. It offers high performance with key advantages such as low RDS(on) and efficient power dissipation.Product AttributesBrand: SHENZHEN HOTTECH ELECTRONICS CO....
P channel MOSFET HUASHUO HSU3119 featuring fast switching and operation for power management systems
Product Overview The HSU3119 is a P-channel MOSFET featuring high cell density trench technology, designed for excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This device offers fast switching capabilities and meets RoHS and Green Product requiremen...
Fast switching MOSFET HUASHUO HSU0107 P channel 100V with trench technology and low RDS ON resistance
Product Overview The HSU0107 is a P-channel, 100V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This MOSFET meets RoHS and Green Product requirements ...
High cell density HUASHUO HSBA4052 N channel trench MOSFET offering low gate charge and power conversion
Product Overview The HSBA4052 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converters. It offers excellent RDS(ON) and low gate charge, contributing to efficient power conversion. This device meets RoHS and Green Product ...
Power MOSFET Hangzhou Silan Microelectronics SVF18N50F N Channel 500V 18A for AC DC and Motor Driver
Silan Microelectronics SVF18N50F(T)(PN)(FJ) N-CHANNEL MOSFETThe SVF18N50F/T/PN/FJ is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This technology offers reduced on-state resistance, superior switching ...
P Channel MOSFET 60V HUASHUO HSBB6113 Featuring Fast Switching and Low RDS ON for Power Management Solutions
HSBB6113 P-Ch 60V Fast Switching MOSFETs The HSBB6113 is a high cell density trenched P-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product ...
Low On Resistance Dual P Channel Transistor Guangdong Hottech 4953 with Molded Plastic Case Material
Product OverviewThis is a Dual P-Channel Enhancement Mode Field Effect Transistor designed for load switch or PWM applications. It features low on-resistance, low gate charge, and is available in a surface mount SOP-8 package.Product AttributesBrand: SHENZHEN HOTTECH ELECTRONICS CO.,LTDCase Material...
100V Drain Source Voltage N Channel MOSFET HUASHUO HSBA045N10 for Synchronous Rectification Circuits
Product Overview The HSBA045N10 is a high-performance N-Channel MOSFET designed for fast switching applications. Featuring 100V drain-source voltage and a super low RDS(ON), this device is ideal for motor drivers, Battery Management Systems (BMS), and high-frequency switching with synchronous ...
