Single FETs, MOSFETs

Product Overview The AO3401A is a P-channel, 30V fast switching MOSFET designed for high cell density trenched technology. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This product meets RoHS and Green Product requirements and is available as a Green Device. Key features include super low gate charge and excellent CdV/dt effect decline, powered by advanced high cell density Trench technology.

Product OverviewThe SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor manufactured using Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This technology enhances on-state resistance, switching performance, and high energy pulse withstand capability in avalanche and commutation modes. It is widely used in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.Product AttributesBrand: Silan Microelectron

Product OverviewThe 2N7002K is an N-Channel MOSFET designed for various electronic applications. It features low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speed, making it suitable for efficient power management and signal switching. Its low input/output leakage contributes to reduced power consumption.Product AttributesBrand: SHENZHEN HOTTECH ELECTRONICS CO.,LTDProduct Name: 2N7002KType: MOSFET (N-CHANNEL)Package: SOT-23Case

Product Overview The HSM24P03 is a P-channel, 30V fast switching MOSFET designed for high-performance synchronous buck converter applications. It features high cell density trench technology, offering excellent RDS(ON) and low gate charge. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and is approved for full function reliability. It provides excellent CdV/dt effect decline. Product Attributes Brand: HS-Semi Product Type: P-Channel MOSFET

Product Overview The HSP0076A is a high-performance N-Channel MOSFET designed for fast switching applications. Featuring a 100V drain-source voltage rating and exceptionally low RDS(ON), this MOSFET is ideal for motor drivers, battery management systems (BMS), and high-frequency switching circuits requiring synchronous rectification. It offers guaranteed 100% EAS performance and is available as a Green Device, combining advanced high-cell density Trench technology with

Product OverviewThe SMF7N60 is a 600V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction. It features low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, offering reliable performance in demanding applications.Product AttributesBrand: HUAKE semiconductorsModel: SMF7N60Voltage Rating: 600VChannel Type: N-ChannelPackage Type: TO-220FDocument Version

Product OverviewThe AO3407 is a P-Channel MOSFET utilizing advanced trench technology to achieve excellent RDS(ON) and low gate charge. It is suitable for load switch applications and Pulse Width Modulation (PWM) applications.Product AttributesBrand: GUANGDONG HOTTECH INDUSTRIAL CO., LTDProduct Name: AO3407Package: SOT-23Technical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitAbsolute Maximum RatingsDrain-Source VoltageVDS-30VGate-Source VoltageVGS±20VContinuous

Product Overview The HSU100P04 is a P-channel, 40V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This MOSFET is RoHS and Green Product compliant, with 100% EAS guaranteed and full function reliability approved. Key advantages include super low gate charge, excellent CdV/dt effect decline, and availability as a Green Device.

Product Overview The HSW2N10D is a dual N-channel fast switching MOSFET featuring high cell density and trenched technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This MOSFET meets RoHS and Green Product requirements with full functional reliability approval. It is ideal for PWM applications and load switching. Product Attributes Brand: HSW Product Type: Dual N-CH Fast Switching MOSFETs

Product OverviewThe HST502 is a 100V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It offers a continuous drain current of 120A (package limit) and a low on-resistance of 4.9m (typ) at VGS=10V. Key features include low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, making it a reliable component for demanding power electronics

Product Overview The HSH80P10 is a P-Channel, 100V Fast Switching MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it suitable for a wide variety of applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability. Key advantages include excellent CdV/dt effect decline and advanced high cell density Trench technology. It is recommended for portable

Product Overview The HSBB3072 is a N-Channel 30V Fast Switching MOSFET designed for power management applications. It features a super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology. This MOSFET is ideal for power management in desktop computers, DC/DC converters, and isolated DC/DC converters in telecom and industrial sectors. It boasts 100% EAS guaranteed and is available as a Green Device. Product Attributes Brand: HS

OverviewThe IRLML6402 is an ultra-low on-resistance, fast-switching P-Channel Power MOSFET designed for various electronic applications. It offers high performance with key advantages such as low RDS(on) and efficient power dissipation.Product AttributesBrand: SHENZHEN HOTTECH ELECTRONICS CO.,LTDCase Material: Molded PlasticClassification Rating: UL 94V-0Weight: 0.008 grams (approximate)Technical SpecificationsParameterTyp.Max.UnitsConditionsRJA Maximum Junction-to-Ambient

Product Overview The HSU3119 is a P-channel MOSFET featuring high cell density trench technology, designed for excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This device offers fast switching capabilities and meets RoHS and Green Product requirements, with 100% EAS guaranteed and full function reliability approved. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density

Product Overview The HSU0107 is a P-channel, 100V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This MOSFET meets RoHS and Green Product requirements and is available with full function reliability approval. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced trench technology. Product

Product Overview The HSBA4052 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converters. It offers excellent RDS(ON) and low gate charge, contributing to efficient power conversion. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approved. Key benefits include super low gate charge and excellent CdV/dt effect decline, enabled by advanced

Silan Microelectronics SVF18N50F(T)(PN)(FJ) N-CHANNEL MOSFETThe SVF18N50F/T/PN/FJ is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This technology offers reduced on-state resistance, superior switching performance, and enhanced high-energy pulse withstand capability in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM

HSBB6113 P-Ch 60V Fast Switching MOSFETs The HSBB6113 is a high cell density trenched P-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Product Overview The HSBB6113 is a P-channel, 60V fast-switching MOSFET featuring high cell density trench

Product OverviewThis is a Dual P-Channel Enhancement Mode Field Effect Transistor designed for load switch or PWM applications. It features low on-resistance, low gate charge, and is available in a surface mount SOP-8 package.Product AttributesBrand: SHENZHEN HOTTECH ELECTRONICS CO.,LTDCase Material: Molded PlasticClassification Rating: UL 94V-0Email: hkt@heketai.comTechnical SpecificationsParameterSymbolMinTypMaxUnitConditionsOff CharacteristicsDrain-Source breakdown

Product Overview The HSBA045N10 is a high-performance N-Channel MOSFET designed for fast switching applications. Featuring 100V drain-source voltage and a super low RDS(ON), this device is ideal for motor drivers, Battery Management Systems (BMS), and high-frequency switching with synchronous rectification. It offers guaranteed 100% EAS performance and is available as a Green Device, utilizing advanced high cell density Trench technology. Product Attributes Brand: HS-Semi