Single FETs, MOSFETs
Power Management N Channel MOSFET with 3.5 Milliohm On Resistance and 80A Drain Current GOODWORK 80N02
Product OverviewThe 80N02 is a high-performance N-Channel Fast Switching MOSFET designed for demanding applications. It features 20V breakdown voltage, low on-resistance (3.5 m typ.), and high continuous drain current capability (80A). This device utilizes advanced high cell density Trench technology, offering excellent CdV/dt effect decline and 100% EAS guaranteed performance. It is ideal for power management solutions requiring fast switching and high efficiency.Product
Electrical ballast and switching power supply device Hangzhou Silan Microelectronics SVDZ24NT MOSFET
Product OverviewThe SVDZ24NT is an N-channel enhancement mode power MOS field-effect transistor manufactured using Silan's new planar VDMOS process. It features an improved planar stripe cell and guard ring terminal designed to minimize on-state resistance, enhance switching performance, and provide superior withstand capability for high energy pulses in avalanche and commutation modes. This device is widely utilized in electrical ballast and low power switching power supply
Power Management Solution Guangdong Hottech IRLML5203 P Channel MOSFET with Ultra Low On Resistance
Product OverviewThe IRLML5203 is a P-Channel Power MOSFET featuring Generation V Technology, offering ultra-low on-resistance and a low profile (
Low RDS on 20V MOSFET GOODWORK 3439KDW GK Suitable for Battery Management and Portable Electronics
Product OverviewThe 3439KDW is a 20V N-Channel and P-Channel MOSFET featuring a surface mount package, low RDS(on), and operation at low logic level gate drive. It is ESD protected and suitable for load/power switching, interfacing, and battery management in ultra-small portable electronics.Product AttributesPackage: SOT-363Marking: 49KTechnical SpecificationsParameterSymbolP-MOSFET ConditionMinTypeMaxUnitN-MOSFET ConditionMinTypeMaxUnitDrain-Source Breakdown VoltageV(BR
Synchronous buck converter MOSFET GOODWORK 80N06 with high cell density trench design and low RDSon
Product OverviewThe 80N06 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(on) and gate charge, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full function reliability approval, featuring super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial:
Durable voltage controlled small signal switch GOODWORK S33 SI2333 with low RDS ON and rugged design
Product OverviewThe SI2333 is a voltage-controlled small signal switch with a high-density cell design for low RDS(ON). It is rugged, reliable, and offers high saturation current capability, making it suitable for applications requiring efficient switching.Product AttributesMarking Code: S33Technical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-source breakdown voltageV(BR)DSSVGS = 0V, ID =-250A-12VZero gate voltage drain currentIDSSVDS =-12V,VGS = 0V-1AGate
Small Signal MOSFET GOODWORK FDN337N GK Featuring Rugged Design and High Saturation Current Capability
Product OverviewThe FDN337N is a N-Channel Enhancement Mode Field Effect Transistor designed for high-density cell applications. It functions as a voltage-controlled small signal switch with a rugged and reliable design, offering high saturation current capability. Its key advantage is the high-density cell design for low RDS(ON).Product AttributesMarking Type number: FDN337NMarking code: 3400Package: SOT-23Technical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitMax
GOODWORK 3134K GK N Channel MOSFET with Low Logic Level Gate Drive and Surface Mount SOT 723 Package
Product OverviewThis N-Channel MOSFET is designed for ultra-small portable electronics, offering low RDS(on) and low logic level gate drive. It is ideal for load/power switching, interfacing, switching, and battery management applications. Features include a lead-free product and a surface mount SOT-723 package.Product AttributesPackage: SOT-723Lead Free: YesProduct Type: N-Channel SwitchMarking: KFTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitMaximum
Trench DMOS Technology N Channel Power MOSFET with Superior Switching Performance GOODWORK AO3418 GK
Product OverviewThese N-Channel enhancement mode power field effect transistors utilize trench DMOS technology, optimized for minimal on-state resistance, superior switching performance, and high energy pulse handling in avalanche and commutation modes. They are well-suited for high efficiency fast switching applications.Product AttributesBrand: DEMACHELModel: AO3418Technology: Trench DMOSFeatures: Improved dv/dt capability, Fast switching, Green Device AvailableTechnical
Power MOSFET Hangzhou Silan Microelectronics SVF5N60F Ideal for DC DC Converters and PWM Motor Drivers
Product OverviewThe SVF5N60F/D/K is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. Engineered for enhanced performance, it offers reduced on-state resistance, superior switching characteristics, and robust high-energy pulse handling in avalanche and commutation modes. This versatile device is ideal for AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.Product
Switching MOSFET GOODWORK 50N06NF N Channel Device with Low Gate Charge and High Current Handling
Product OverviewThe 50N06D is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsModelBVDSS (V)RDS(ON) (m
switching MOSFET GOODWORK RK7002BM-GK plastic encapsulated device with high density cell design and performance
Product OverviewThe RK7002BM is a professional semiconductor device, a plastic-encapsulated MOSFET designed for voltage-controlled small signal switching. It features a high-density cell design for low RDS(ON), a rugged and reliable construction, and high saturation current capability. This MOSFET is suitable for various applications requiring efficient and dependable switching performance.Product AttributesBrand: gk-goodwork.comProduct Name: RK7002BMPackage Type: SOT
load switch component GOODWORK 2N10 N channel MOSFET with excellent RDSon and fast switching capability
Product OverviewThe 2N10 is a high cell density trenched N-channel MOSFET designed for excellent RDS(on) and efficiency in small power switching and load switch applications. It features a low gate charge and excellent Cdv/dt effect decline, making it suitable for fast switching applications. The 1002C meets RoHS and Green Product requirements with full function reliability approval. Advanced high cell density Trench technology ensures superior performance.Product AttributesB
Voltage Controlled Small Signal Switch GOODWORK 2N7002T Designed for Load Switching in DC DC Converters
Product OverviewThe 2N7002T is a voltage-controlled small signal switch featuring a high-density cell design for low RDS(ON). It is a rugged and reliable component with high saturation current capability, suitable for load switching in portable devices and DC/DC converters.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Plastic-EncapsulateColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsSymbolParameterTest conditionsMinTypMaxUnitV
High cell density P channel MOSFET GOODWORK 9435 GK ideal for synchronous buck converter applications
Product OverviewThe 9435 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge, meeting RoHS and Green Product requirements with full function reliability. This device features super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology, making it suitable for fast switching applications.Product AttributesProduct Name: 9435Product Type: P
Power MOSFET Hangzhou Silan Microelectronics SVF4N150PF N channel transistor with low on state resistance
Silan Microelectronics SVF4N150PF(P7)(F) N-CHANNEL MOSFETThe SVF4N150PF(P7)(F) is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This advanced technology offers reduced on-state resistance, superior switching performance, and enhanced high-energy pulse handling in avalanche and commutation modes. It is widely used in power supply applications.Product AttributesBrand: Silan Microelect
N Channel MOSFET GOODWORK BSS123W Featuring Rugged Design and Low On Resistance for Switching Circuits
Product OverviewThe BSS123W is an N-Channel MOSFET featuring a surface mount package and a high-density cell design for extremely low RDS(ON). It serves as a voltage-controlled small signal switch, offering ruggedness and reliability. This MOSFET is suitable for applications such as small servo motor controls, power MOSFET gate drivers, and general switching applications.Product AttributesPackage: SOT-323Marking: K23Technical SpecificationsParameterSymbolTest ConditionMinTypM
Power Transistor GOODWORK SI2323DS Utilizing Trench DMOS Technology in P Channel Enhancement Mode Design
Product OverviewThese P-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology. This technology is optimized to minimize on-state resistance, deliver superior switching performance, and provide robust withstand capability for high energy pulses in avalanche and commutation modes. These devices are well-suited for high efficiency, fast switching applications.Product AttributesBrand: DEMACHELDevice Type: Power Field Effect TransistorTech
Power switching and load switch applications enhanced by GOODWORK SI2307 p channel mosfet technology
Product OverviewThe SI2307 is a high cell density trenched P-channel MOSFET designed for excellent RDSON and efficiency in small power switching and load switch applications. It meets RoHS and Green Product requirements with full function reliability approval. This device features Green Device availability, super low gate charge, and excellent Cdv/dt effect decline due to its advanced high cell density Trench technology.Product AttributesBrand: DEMACHELCertifications: RoHS,
synchronous buck converter P channel MOSFET GOODWORK 50P06 with low RDS ON and 100 percent EAS guaranteed
Product OverviewThe 50P06 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, ensuring high efficiency. This device meets RoHS and Green Product requirements, and is 100% EAS guaranteed with full functional reliability.Product AttributesGreen Device AvailableRoHS Compliant100% EAS GuaranteedTechnical SpecificationsSymbolParameterConditionsMin.Typ.Max.UnitAbsolute Maximum
