Single FETs, MOSFETs

Product OverviewThe 600R65F is an N-Channel Super Junction MOSFET designed for high-efficiency power applications. It features low drain-source on-resistance and ultra-low gate charge, contributing to improved performance and reduced switching losses. This RoHS compliant device is 100% avalanche tested, ensuring reliability.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: RoHS compliantTechnical Specificatio

13N50F N-Channel Power MOSFET The 13N50F is an N-Channel Power MOSFET designed with an advanced planar process, offering 100% UIS and Rg tested for enhanced reliability. It is ideal for power supply and AC/DC LED lighting applications, providing efficient power management. Product Attributes Case: Molded plastic body Terminals: Solder plated, solderable per MIL-STD-750 Polarity: As marked Mounting Position: Any Technical Specifications Parameter Symbol Conditions Limit Unit

Product Overview The GL50N03A4 is a GL Silicon N-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide variety of applications. This MOSFET is designed for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. It is housed in a TO-252 package that complies with RoHS standards, ensuring good heat dissipation. Product Attributes

Product OverviewThe 5N50 is an N-CHANNEL MOSFET designed for high-frequency switching applications. It features fast switching capability, avalanche energy specification, and improved dv/dt capability with high ruggedness. This makes it suitable for use in high frequency switching mode power supplies, electronic ballasts, and LED power supplies.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTe

Product OverviewThe FDN340P is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(on) and gate charge characteristics, meeting RoHS and Green Product requirements with full reliability. Key advantages include super low gate charge, green device availability, and advanced high cell density trench technology for excellent CdV/dt effect decline.Product AttributesBrand: DEMACHELCertifications: RoHS, Green

Product Overview The GL40P04A4 is a P-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, utilizing advanced trench technology and design to achieve excellent RDS(ON) with low gate charge. This MOSFET is suitable for a wide variety of applications, including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. It features a high-density cell design for ultra-low Rdson, fully characterized avalanche voltage and

Product OverviewThe 3080K is an N-Channel Trench Power MOSFET designed for load switch and PWM applications. It features advanced trench technology for excellent RDS(ON) and low gate charge, offering high performance with a 30V Drain-Source Voltage and 80A Continuous Drain Current. Its low on-resistance (3.4m Typ. @ VGS=10V) and efficient design make it suitable for demanding power management tasks.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not

Product OverviewThe 600R65 is a high-performance N-channel MOSFET designed for demanding power applications. It features a 650V breakdown voltage and a continuous drain current of 7.3A, with a low on-resistance of 0.51 (Typ.) at VGS = 10V, ID = 3.5A. This device offers fast switching speeds, improved dv/dt capability, and is 100% avalanche tested, making it ideal for Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), and Power Factor Correction (PFC)

SI2310A N-Channel SMD MOSFETThe SI2310A is an N-Channel Surface Mount Device (SMD) MOSFET designed for various electronic applications. Its characteristics are detailed across several plots illustrating its electrical performance under different conditions.Technical SpecificationsParameterConditionValueDrain Current (ID)ID=3A, Ta=25PulsedDrain Current (ID)VGS=5V, 4V, 3.0VPulsedDrain Current (ID)VGS=2.5VPulsedDrain Current (ID)VGS=2.0VPulsedDrain Current (ID)VDS=5.0V, PulsedTa

Product OverviewThe DMP3099L is a MOSFET designed for voltage-controlled small signal switching applications. It features a high-density cell design for low RDS(ON), is rugged and reliable, and offers high saturation current capability. This product is suitable for high-density applications where low on-resistance is critical.Product AttributesBrand: DEMACHELPackage Type: SOT-23Technology: Plastic-Encapsulate MOSFETSTechnical SpecificationsParameterSymbolConditionMinTypMaxUni

Product OverviewThe 5N10 is an N-Channel Enhancement Mode Field Effect Transistor designed for various applications including consumer electronic power supplies, motor control, synchronous-rectification, isolated DC/DC converters, and inverters. It offers low RDS(on) & FOM, extremely low switching loss, and excellent stability and uniformity, enabling fast switching and soft recovery.Product AttributesBrand: DEMACHELModel: 5N10Package: SOT-23Technical SpecificationsParameterS

Product OverviewThe FS2301 is a P-Channel SMD MOSFET utilizing advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is ideal for load switching in portable devices and DC/DC converters.Product AttributesBrand: FUXINPackage Type: SOT-23Technical SpecificationsParameterSymbolTest ConditionMin.Typ.Max.UnitAbsolute Maximum RatingsDrain-Source VoltageVDS-20VGate-Source VoltageVGS8VContinuous Drain CurrentID-2.4APulsed Drain CurrentIDM

Product OverviewThese P-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology, optimized for minimal on-state resistance and superior switching performance. They are designed to withstand high energy pulses in avalanche and commutation modes, making them well-suited for high efficiency fast switching applications. Available in a Green Device option and suitable for -4.5V gate drive applications.Product AttributesBrand: FDS (implied

Product OverviewThe 30N06 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDSON and gate charge, meeting RoHS and Green Product requirements with 100% EAS guaranteed and full function reliability approval. Key advantages include its fast switching capability, low gate charge, and excellent CdV/dt effect decline due to advanced high cell density trench technology.Product AttributesGreen Device

Product OverviewThe FS3400 is an N-Channel SMD MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is ideal for load switching in portable devices and DC/DC converters.Product AttributesBrand: Fuxin SemiconductorPackage: SOT-23Technical SpecificationsParameterSymbolTest ConditionMin.Typ.Max.UnitAbsolute Maximum RatingsDrain-Source VoltageVDS30VGate-Source VoltageVGS±12VContinuous Drain CurrentID5.8APulsed Drain

Product OverviewThe AO3407A is a P-channel enhancement mode MOSFET designed for various applications. It offers efficient performance and is suitable for power management solutions.Product AttributesBrand: AOModel: AO3407ATechnical SpecificationsParameterValueVDS-30VID-5.7ARDS(ON)30m @ VGS = -10VRDS(ON)35m @ VGS = -4.5VVGS(th)-1V @ ID = -250µAQg12nC @ VGS = -10VID @ VGS = -10V, VDS = -10V-5.7AID @ VGS = -4.5V, VDS = -10V-4.8ACiss450pFCoss80pFCrss20pFEon12nCEoff20nCTJ150°CTSTG

Product OverviewThe AO3401A is a voltage-controlled small signal switch designed with a high-density cell structure for low RDS(ON). It offers ruggedness, reliability, and high saturation current capability, making it suitable for various applications.Product AttributesMarking Type number: AO3401AMarking code: A19TPackage: SOT-23Technology: Plastic-Encapsulate MOSFETSTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-Source VoltageVDS-30VGate-Source

Product OverviewThe SI2312A is a high-cell density trench N-channel MOSFET designed for efficient power switching and load switch applications. It offers excellent RDS(ON) and efficiency, meeting RoHS and Green Product requirements with full reliability.Product AttributesBrand: GK-GoodworkCertifications: RoHS, Green Device AvailablePackage: SOT-23-3LTechnical SpecificationsParameterSymbolTest ConditionMin.Typ.Max.UnitsAbsolute Maximum RatingsDrain-Source VoltageVDS20VGate

Product Overview The GL20N10B4S is an N-Channel Power MOSFET from Wuxi Guang Lei Electronic Technology Co., LTD. Utilizing advanced trench technology, it offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. This RoHS-compliant component comes in a TO-252 package and features fast switching, low gate charge and Rdson, low

Product Overview The GL12P40A4 is a P-Channel Power MOSFET from GL Silicon, utilizing advanced trench technology and design for excellent RDS(ON) with low gate charge. This MOSFET is suitable for a wide variety of applications, including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. It features a high-density cell design for ultra-low Rdson, fully characterized avalanche voltage and current, and an excellent package for good