Single FETs, MOSFETs
Low Gate Charge N Channel MOSFET GL GL540A8P with TO 220AB Package and High Avalanche Current Rating
Product Overview The GL540A8P is a N-Channel Power MOSFET from GL Silicon, manufactured by Wuxi Guang Lei Electronic Technology Co., LTD. It utilizes advanced Planr technology and design to achieve excellent RDS(ON) with low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. The MOSFET is housed in a TO-220AB package that complies with RoHS standards,
Silicon Carbide Power MOSFET N Channel Enhancement Mode FUXINSEMI C2M0045170D for Power Applications
Product OverviewThe C2M0045170D is a Silicon Carbide (SiC) Power MOSFET with N-Channel Enhancement Mode. It is designed for power applications requiring high performance and efficiency.Product AttributesBrand: FuxinsemiMaterial: Silicon CarbideTechnical SpecificationsParameterConditionsTypical ValueUnitCapacitance (Ciss)TJ = 25 C, VAC = 25 mV, f = 1 MHz1pFCapacitance (Coss)TJ = 25 C, VAC = 25 mV, f = 1 MHz10pFCapacitance (Crss)TJ = 25 C, VAC = 25 mV, f = 1 MHz100pFCapacitance
Power Switching N Channel MOSFET GL GL30N03A4 Featuring Low RDS ON and RoHS Compliant TO 252 Package
Product Overview The GL30N03A4 is a high-performance N-Channel Power MOSFET from Wuxi Guang Lei Electronic Technology Co., LTD. Utilizing advanced trench technology, it offers excellent low RDS(ON) and minimal gate charge, making it ideal for a wide range of power switching applications, including hard-switched and high-frequency circuits, as well as uninterruptible power supplies. The device is housed in a RoHS-compliant TO-252 package, ensuring good heat dissipation.
Power Switching N Channel MOSFET GL GL80N06FA9 Featuring Low Gate Charge and TO 220F Package
Product Overview The GL80N06FA9 is a high-performance N-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD. Utilizing advanced trench technology and design, it offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. The TO-220F package ensures good heat dissipation and complies with RoHS standards. Product
Low Gate Charge N Channel MOSFET GOODWORK AO3404 Ideal for Load Switch and PWM Circuit Applications
Product OverviewThe AO3404 is an N-Channel Enhancement Mode Field Effect Transistor that utilizes advanced trench technology. This technology provides excellent RDS(ON) and low gate charge, making it suitable for use as a load switch or in PWM applications. The separated source leads allow for a Kelvin connection, which can be used to bypass source inductance.Product AttributesBrand: DEMACHELProduct ID Marking: A49TPackage: SOT-23Technical SpecificationsParameterSymbolTest
GL GLN4013AS 8 N Channel MOSFET Offering Fast Switching and Low Reverse Transfer Capacitance in SOP 8
Product Overview The GLN4013AS-8 is an N-Channel Power MOSFET from Wuxi Guang Lei Electronic Technology Co., LTD, utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including PWM applications, load switching, and power management. This component features fast switching, low gate charge and Rdson, low reverse transfer capacitances, and is 100% tested for single pulse avalanche energy. The
SOP 8 Packaged P Channel Power MOSFET GL GL14P04-8 with High Density Cell Design and RoHS Compliance
Product Overview The GL14P04-8 is a P-Channel Power MOSFET from Wuxi Guang Lei Electronic Technology Co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for a wide range of applications, it features a high-density cell design for ultra-low Rdson, fully characterized avalanche voltage and current, and an excellent package for good heat dissipation. This RoHS-compliant SOP-8 packaged MOSFET is suitable for power switching
High Voltage N Channel MOSFET GL GL10N10B4S with 100V Drain Source Voltage and 40W Power Dissipation
Product Overview The GL10N10B4S is an N-Channel Power MOSFET from GL Silicon, utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide variety of applications including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. The device is housed in a RoHS-compliant TO-252 package, designed for good heat dissipation. Product Attributes Brand: GL Silicon Origin: Wuxi
Power MOSFET GL GL40N10A4 N Channel Type Featuring Low RDS ON Resistance and High Avalanche Capability
Product Overview The GL40N10A4 is a N-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for high-density cell applications, it offers an ultra-low RDS(ON) and is fully characterized for avalanche voltage and current. Its TO-252 package ensures good heat dissipation and complies with RoHS standards. This MOSFET is suitable for power switching applications, hard
Silicon N Channel Transistor GL GL40N30A8 with TO 220AB Package and Enhanced Avalanche Energy Rating
Product Overview The GL40N30A8 is a silicon N-channel Enhanced VDMOSFET manufactured using a self-aligned planar technology. This design contributes to reduced conduction losses, improved switching performance, and enhanced avalanche energy. It is suitable for various power switching circuits, promoting system miniaturization and higher efficiency. The device is packaged in a RoHS-compliant TO-220AB package. Product Attributes Brand: Guang Lei () Origin: Wuxi, China
Power Switching P Channel MOSFET GL GL4435 8 with Low Gate Charge and Ultra Low Rdson in SOP 8 Package
Product Overview The GL4435-8 is a P-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, engineered with advanced trench technology for superior RDS(ON) and low gate charge. This RoHS-compliant SOP-8 packaged MOSFET is ideal for a wide range of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Its high-density cell design ensures ultra-low Rdson, and it is fully characterized for
Power switching MOSFET FUXINSEMI FS1012ET N Channel SMD type suitable for battery operated systems
Product OverviewThe FS1012ET is an N-Channel SMD MOSFET designed with a high-density cell structure for ultra-low on-resistance. It offers high-side switching capabilities and is built for rugged and reliable performance. This MOSFET is suitable for various battery-operated systems, power supply converter circuits, and load/power switching applications, including cell phones, pagers, drivers, relays, solenoid, lamps, hammers, displays, and memories. It also features ESD
Power Switching P Channel MOSFET FUXINSEMI FS3415K with 2KV ESD Protection and Trench Process Technology
Product OverviewThe FS3415K is a P-Channel SMD MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It offers ESD protection up to 2.0KV (HBM) and is designed for load switching in portable devices and DC/DC converters. This MOSFET provides excellent performance with low on-resistance values at various gate-source voltages.Product AttributesBrand: FuxinsemiPackage: SOT-23Type: P-Channel SMD MOSFETCertifications: ESD
GL GL10NP06V D8 N P Channel MOSFET Featuring Low RDS ON and Silicon Material for Power Electronics
Product Overview The GL10NP06V-D8 is a high-performance N+P Channel Power MOSFET from Wuxi Guang Lei Electronic Technology Co., LTD. Utilizing advanced trench technology, it offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications. This RoHS-compliant component is available in a SOP-8 package. Key applications include H-bridges and inverters. Product Attributes Brand: GL Manufacturer: Wuxi Guang Lei Electronic Technology Co., LTD
Power MOSFET N Channel TO220AB Package Featuring GL GLZ24A8 Suitable for Power Switching Applications
Product Overview The GLZ24A8 is a high-performance N-Channel Power MOSFET from GL Silicon, manufactured by Wuxi Guang Lei Electronic Technology Co., LTD. Utilizing advanced trench technology, it offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. The device is packaged in a RoHS-compliant TO-220AB package. Product Attributes
High Voltage Silicon N Channel MOSFET GL GL5N50A4 with 30V Gate to Source Voltage and TO 252 Package
Product Overview The GL5N50A4 is a silicon N-channel Enhanced VDMOSFET manufactured using self-aligned planar technology. This design minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is suitable for various power switching circuits, contributing to system miniaturization and increased efficiency. The device is packaged in a RoHS-compliant TO-252 package. Product Attributes Brand: GL Material: Silicon N-Channel Power MOSFET Package
High Saturation Current N Channel MOSFET FUXINSEMI 2N7002KD for Portable Device Applications
Product OverviewThe 2N7002KD is an N-Channel SMD MOSFET featuring a high-density cell design for ultra-low on-resistance. It functions as a voltage-controlled small signal switch, offering ruggedness, reliability, and high saturation current capability. This ESD-protected MOSFET is ideal for load switching in portable devices and DC/DC converters.Product AttributesBrand: Fuxin SemiconductorOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: ESD
Silicon Carbide Power MOSFET N Channel Enhancement Mode FUXINSEMI C2M0160120D for Power Applications
Product OverviewThe C2M0160120D is a Silicon Carbide Power MOSFET featuring N-Channel Enhancement Mode operation. Designed for high-performance power applications, it leverages the advantages of Silicon Carbide technology for improved efficiency and reliability.Product AttributesBrand: FuxinsemiMaterial: Silicon CarbideType: N-Channel Enhancement ModeRoHS: Pb e3Technical SpecificationsPart NumberDescriptionC2M0160120DSilicon Carbide Power MOSFET, N-Channel Enhancement
High Current N Channel MOSFET GL GL80N10A4 Suitable for Hard Switched and High Frequency Circuits
Product Overview The GL80N10A4 is a N-Channel Power MOSFET from Wuxi Guang Lei Electronic Technology Co., LTD, utilizing advanced trench technology and design to achieve excellent RDS(ON) with low gate charge. This MOSFET is suitable for a wide variety of applications, including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. It is housed in a TO-252 package that complies with RoHS standards, offering good heat dissipation.
FUXINSEMI IRLML0100TRPBF FS N Channel SMD MOSFET with low drain source on resistance and capacitance
Product OverviewThe IRLML0100TRPBF-FS is an N-Channel SMD MOSFET designed for various electronic applications. Its typical performance characteristics are detailed across several figures, illustrating its output, transfer, capacitance, gate charge, and on-resistance properties.Product AttributesBrand: IRLType: N-Channel SMD MOSFETTechnical SpecificationsModelOutput CharacteristicsTransfer CharacteristicsCapacitance CharacteristicsGate ChargeDrain-Source on ResistanceIRLML0100
