Single FETs, MOSFETs

Product Overview The GL8P04 is a P-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. The device is housed in a RoHS-compliant SOT-23-3L package, ensuring good heat dissipation. Product Attributes

Product OverviewThe AO3407 is a voltage-controlled small signal switch with a high-density cell design for low RDS(ON). It offers ruggedness, reliability, and high saturation current capability, making it suitable for various applications requiring efficient switching.Product AttributesBrand: DEMACHELType Number: AO3407Marking Code: A79TPackage: SOT-23Technology: Plastic-Encapsulate MOSFETSTechnical SpecificationsParameterSymbolConditionMinTypMaxUnitAbsolute Maximum

Product Overview The GL18N25A4 is a silicon N-channel Enhanced VDMOSFET manufactured using self-aligned planar technology. This design minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is suitable for various power switching circuits, contributing to system miniaturization and increased efficiency. The device is packaged in a RoHS-compliant TO-252 package. Product Attributes Brand: Guang Lei () Origin: Wuxi, China Material: Silicon

Product Overview The GL8N04-8 is an N-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for high-density cell applications, it offers ultra-low Rdson and is fully characterized for avalanche voltage and current. Its SOP-8 package ensures good heat dissipation and complies with RoHS standards. This MOSFET is suitable for power switching applications, hard switched

Product Overview The GL5N04 is a Silicon N-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for a wide variety of applications including PWM applications, load switches, and power management. The SOT-23-3L package complies with RoHS standards. Key features include fast switching, low gate charge and Rdson, low reverse transfer capacitances, and 100% single

Product OverviewThe AO3400 is an N-Channel Enhancement Mode Field Effect Transistor designed with a high-density cell structure for low RDS(ON). It functions as a voltage-controlled small signal switch, offering ruggedness, reliability, and high saturation current capability. This transistor is suitable for applications requiring efficient switching performance.Product AttributesBrand: D E M A C HE LType Number: AO3400Marking Code: AO9TPackage: SOT-23Technical SpecificationsP

Product Overview The GL3010-8 is a N-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for a wide range of applications, it offers fast switching, low gate charge, low RDS(ON), low reverse transfer capacitances, and 100% single pulse avalanche energy testing. It is suitable for PWM applications, load switches, and power management, and comes in a RoHS-compliant SOP

Product Overview The GL25N40A8 is a high-performance Silicon N-Channel Enhanced VDMOSFET manufactured using self-aligned planar technology. This advanced design significantly reduces conduction losses, enhances switching performance, and improves avalanche energy capabilities, making it ideal for various power switching circuits that require system miniaturization and higher efficiency. The device is supplied in a RoHS-compliant TO-220 package. Key Features: Fast Switching

Product OverviewThe 4N65 is a high voltage MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is suitable for use in power supplies, PWM motor controls, high-efficiency DC to DC converters, and bridge circuits.Product AttributesBrand: GREENMICROModel: 4N65Website: WWW.GREENMICRO.NETVersion: V1.3Technical

Product Overview The GL150N03AD is a N-Channel Power MOSFET from GL Silicon, manufactured by Wuxi Guang Lei Electronic Technology Co., LTD. It utilizes advanced trench technology and design to achieve excellent RDS(ON) with low gate charge, making it suitable for a wide variety of applications including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. The device features fast switching, low gate charge and Rdson, low reverse

Product Overview The GL9Z24A8 is a P-Channel Power MOSFET from Wuxi Guang Lei Electronic Technology Co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for a wide variety of applications, it offers fast switching, low gate charge, low Rdson, low reverse transfer capacitances, and 100% single pulse avalanche energy testing. This MOSFET is suitable for power switching applications, hard switched and high frequency circuits, and

SOT-23 Package InformationThis document provides detailed dimensional specifications for the SOT-23 package.Technical SpecificationsSymbolDimensions In MillimetersDimensions In InchesMin.Max.Min.Max.A0.9001.1500.0350.045A10.0000.1000.0000.004A20.9001.0500.0350.041b0.3000.5000.0120.020c0.0800.1500.0030.006D2.8003.0000.1100.118E1.2001.4000.0470.055E12.2502.5500.0890.100e0.950 TYP.0.037 TYP.e11.8002.0000.0710.079L0.550 REF.0.022 REF.L10.3000.5000.0120.0202409302302_FUXINSEMI

Product OverviewThe FS2302A is an N-Channel SMD MOSFET featuring an advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is designed for load switching in portable devices and DC/DC converters, offering efficient power management.Product AttributesBrand: Fuxin SemiconductorPackage: SOT-23Technical SpecificationsParameterSymbolTest ConditionMin.Typ.Max.UnitAbsolute Maximum RatingsDrain-Source VoltageVDS20VGate-Source VoltageVGS8VCon

2411220305_FUXINSEMI-AO3401A_C5380686.pdf

Product OverviewThe FS2312 is an N-Channel SMD MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is designed for load switching in portable devices and DC/DC converters.Product AttributesBrand: Fuxin SemiconductorOrigin: China (implied by website domain)Technical SpecificationsParameterSymbolTest ConditionMin.Typ.Max.UnitAbsolute Maximum RatingsDrain-Source VoltageVDS20VGate-Source VoltageVGS±10VContinuous Drain

Product Overview This document details the C2M0040120D, a power semiconductor device from Fuxinsemi, designed for high-performance applications. It provides comprehensive electrical characteristics, including output characteristics, on-resistance variations with temperature and current, transfer characteristics, body diode performance, threshold voltage, gate charge, and capacitance data across various operating conditions and temperatures. The device is suitable for

Product OverviewThe C3M0016120D is a Silicon Carbide Power MOSFET with N-Channel Enhancement Mode. It is designed for high-performance power applications.Product AttributesBrand: FuxinsemiMaterial: Silicon CarbideType: N-Channel Enhancement ModeTechnical SpecificationsPart NumberDescriptionC3M0016120DSilicon Carbide Power MOSFET, N-Channel Enhancement Mode2409302301_FUXINSEMI-C3M0016120D_C22365193.pdf

Product OverviewThis document presents the output characteristics, on-resistance, 3rd quadrant characteristics, stored energy, and capacitance versus drain-source voltage for a semiconductor device. The data is presented across various junction temperatures and gate voltages, illustrating the device's performance under different operating conditions.Product AttributesBrand: FuxinsemiWebsite: www.fuxinsemi.comDocument Version: Ver2.1Technical SpecificationsFigureDescriptionCon

Product OverviewThe C2M1000170D is a Silicon Carbide Power MOSFET featuring N-Channel Enhancement Mode. It is designed for high-performance power applications.Product AttributesBrand: Fuxin SemiconductorMaterial: Silicon CarbideTechnical SpecificationsParameterConditionsValueDrain-Source Current, IDS (A)VDS = 20 V, tp < 200 s, TJ = 25 C0 to 16Drain-Source Current, IDS (A)VDS = 20 V, tp < 200 s, TJ = -55 C0 to 16Drain-Source Current, IDS (A)VDS = 20 V, tp < 200 s, TJ = 150 C0

Product OverviewThe IRLML6244TRPBF-FS is an N-Channel SMD MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is designed for load switching in portable devices and DC/DC converters.Product AttributesBrand: Fuxin SemiconductorPackage: SOT-23Marking: S12Technical SpecificationsParameterSymbolTest ConditionMin.Typ.Max.UnitStatic CharacteristicsV(BR)DSSVGS = 0V, ID =250A20VIDSSVDS =20V,VGS = 0V1AIGSSVGS =10V, VDS =