Single FETs, MOSFETs

Product Overview The GL18N30FA9 is a silicon N-channel Enhanced VDMOSFET developed using self-aligned planar technology. This design enhances switching performance, reduces conduction losses, and improves avalanche energy. It is suitable for various power switching circuits, contributing to system miniaturization and higher efficiency. The device comes in a RoHS-compliant TO-220F package. Key features include fast switching, low ON resistance (Rdson 0.22), low gate charge,

Product Overview The GL20N04A4 is a N-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for high-density cell applications, it offers an ultra-low Rdson and is fully characterized for avalanche voltage and current. Its robust package ensures good heat dissipation, making it suitable for power switching applications, hard switched and high-frequency circuits, and

Product Overview18V P-channel enhancement mode MOSFET with advanced processing technology, ultra-low on-resistance, and high-density cell design. Suitable for applications requiring efficient power switching.Product AttributesBrand: SHEN ZHEN FINE MAD ELECTRONICS GROUP CO., LTD.Origin: ChinaDocument Number: S&CIC1241Technical SpecificationsParameterSymbolTest ConditionMinTypicalMaxUnitDrain-Source Breakdown VoltageBVDSSVGS = 0V, ID = 250uA-12-18--VOn-ResistanceRDS(on)VGS = -4

Product Overview The GL12P03-8 is a P-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for a wide variety of applications, it features a high-density cell design for ultra-low Rdson and is housed in a RoHS-compliant SOP-8 package. This MOSFET is suitable for power switching applications, hard switched and high-frequency circuits, and uninterruptible power supplies.

Product OverviewThe FMD5N50E5 is a silicon N-channel Enhanced VDMOSFET manufactured using self-aligned planar technology. This technology enhances efficiency by reducing conduction loss, improving switching performance, and increasing avalanche energy. It is suitable for various power switching circuits, enabling system miniaturization and higher efficiency. The device comes in a RoHS-compliant TO-252 package.Key features include a fast body diode that eliminates the need for

Product OverviewThe AS3415E is a P-Channel TrenchFET Power MOSFET designed for load switching in portable devices and DC/DC converters. It features ESD protection and is housed in a SOT-23 package.Product AttributesBrand: anbonsemiPackage Type: SOT-23Material: Plastic-Encapsulate MOSFETSTechnical SpecificationsCharacteristicSymbolMinTypMaxUnitDrain-Source VoltageBVDSS-20--VGate-Source VoltageVGS--+8VDrain Current (continuous)ID---4ADrain Current (pulsed)IDM---17AESD (HBM)-

Product Overview The GL80N03A4 is a high-performance N-Channel Power MOSFET from Wuxi Guang Lei Electronic Technology Co., LTD. Engineered with advanced trench technology, it delivers excellent RDS(ON) with low gate charge, making it suitable for a wide range of power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. The device features a high-density cell design for ultra-low Rdson, fully characterized avalanche voltage

Product Overview The GL3401K is a P-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for a wide range of applications, it features a high-density cell design for ultra-low Rdson and is housed in a RoHS-compliant SOT-23 package. This MOSFET is characterized by its fully guaranteed avalanche voltage and current, and an excellent package for efficient heat dissipation

Product Overview The GL6009AS-8 is an N-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for a wide variety of applications, it features fast switching, low gate charge and Rdson, low reverse transfer capacitances, and is 100% single pulse avalanche energy tested. This RoHS-compliant MOSFET is available in a SOP-8 package and is suitable for power switching

Product Overview The GL80N06A4 is a N-Channel Power MOSFET from Wuxi Guang Lei Electronic Technology Co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for high-density cell applications, it offers ultra-low Rdson and is fully characterized for avalanche voltage and current. Its TO-252 package ensures good heat dissipation and complies with RoHS standards. This MOSFET is suitable for power switching applications, hard switched

Product OverviewThe AO3400A is a high-performance N-channel MOSFET designed for various electronic applications. It offers excellent efficiency and reliability.Product AttributesBrand: AOOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsModelVdsIdRds(on)Vgs(th)QgPackageAO3400A30V5.8A25m1.5V12nCSOT232409241213_FUXINSEMI-AO3400A_C5380685.pdf

Product OverviewThe AO3404A is a high-performance N-channel MOSFET designed for various electronic applications. Its robust construction and efficient operation make it suitable for power management and switching tasks.Product AttributesBrand: AOOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsModelVDS (V)RDS(ON) (m)VGS(th) (V)ID (A)AO3404A3045@VGS=10V2.5@ID=250uA5.72307271405_FUXINSEMI-AO3404A_C7422631.pdf

Product OverviewThe ESN7466 is an N-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This product is Pb-free and Halogen free.Product AttributesBrand: ElecSuperMaterial: Halogen freeCertifications: UL 94V-0Origin: Not specifiedColor: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitAbsolute

Product OverviewThe 3060K is an N-Channel Trench Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 5V. This device is suitable for a wide variety of applications including PWM applications, load switches, and power management, providing high power and current handling capability.Product AttributesBrand: SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.Product Code: 3060KDocument Number:

Product OverviewThe 40S13 is an N-Channel Trench Power MOSFET from Fine Made Microelectronics Group Co., Ltd. It features a high-density cell design for ultra-low RDS(ON), making it suitable for DC/DC converters, wireless chargers, and synchronous rectification applications. Lead-free and green devices are available, complying with RoHS standards.Product AttributesBrand: Fine Made Microelectronics Group Co., Ltd.Product Code: 40S13Certifications: RoHS Compliant (Lead Free and

Product OverviewThe TC736 is an N-Channel Trench Power MOSFET designed for power management and load switch applications. It features low RDS(ON), super high dense cell design, and is reliable and rugged. Lead-free and green devices are available, complying with RoHS standards.Product AttributesBrand: SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. (Superchip)Origin: ChinaCertifications: RoHS Compliant (Lead Free and Green Devices Available)Technical SpecificationsParameterSy

AO4884 SuperMOS SOP8 N-channel MOSFETThe AO4884 is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for superior RDS(ON) and low gate charge. It is ideal for DC-DC conversion, power switching, and charging circuits, offering high density cell design, avalanche rating, and low leakage current. This product is Pb-free and Halogen free.Product AttributesBrand: ElecSuperMaterial: Halogen freeCertifications: UL 94V-0Color: Not specifiedOrigin: Not

Product Overview The GL200N06A8 is a N-Channel Power MOSFET from Wuxi Guang Lei Electronic Technology Co., LTD, utilizing advanced trench technology and design for excellent RDS(ON) with low gate charge. It is suitable for a wide variety of applications, including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. The MOSFET is packaged in a TO-220AB package that conforms to RoHS standards. Key features include fast switching, low

Product OverviewThe FMD3N60E5 is an N-channel Power MOSFET designed for high-efficiency applications. Its features include a fast body diode that eliminates the need for external diodes in Zero Voltage Switching (ZVS) applications, lower gate charge for simpler drive requirements, and a higher gate voltage threshold for improved noise immunity. This MOSFET offers low on-resistance and is RoHS compliant, making it suitable for motor control, uninterruptible power supplies, and

Product OverviewThe FKD6040 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approval, featuring super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology.Product AttributesBrand: FETek Technology Corp