Single FETs, MOSFETs
Power MOSFET FM 3090K Featuring N Channel Trench Technology for PWM Load Switch and Power Management
Product OverviewThe 3090K is an N-Channel Trench Power MOSFET from SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. It utilizes advanced trench technology to achieve excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This device is suitable for a wide variety of applications including PWM applications, load switches, and power management, offering high power and current handling capability.Product AttributesBrand: SHEN ZHEN FINE MADE
Durable ElecSuper ESTF409 P Channel MOSFET Suitable for DC DC Conversion and Power Switch Applications
Product OverviewThe ESTF409 is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuit applications, offering fast switching, high density cell design, and a reliable, rugged construction.Product AttributesBrand: ElecSuperModel: ESTF409Package: TO-220FMaterial: Halogen freeCertifications: UL 94V-0Origin: Not specifiedColor: Not
N Channel Enhancement Mode MOSFET FM 8205LA 20V 6A Drain Current Suitable for High Power Electronics
8205LA 20V N-Channel Enhancement-Mode MOSFET The 8205LA is a 20V N-Channel Enhancement-Mode MOSFET from Fine Made Microelectronics Group Co., Ltd. It features a proprietary advanced planar technology for high-density, ultra-low resistance design, making it suitable for high-power, high-current applications and ideal for lithium battery applications. The device is available in a TSSOP-8 package. Product Attributes Brand: (FINE MADE MICROELECTRONICS GROUP CO., LTD.) Model:
P Channel Power MOSFET FM 2301P Lead Free SOT 23 Package Suitable for PWM and Load Switch Applications
Product OverviewThe 2301P is a P-Channel Trench Power MOSFET from SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. It offers high power and current handling capability, making it suitable for PWM applications, load switches, and power management. This lead-free product comes in a SOT-23 surface mount package.Product AttributesBrand: SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.Product Code: 2301PDocument Number: S&CIC1974Package: SOT-23Certifications: Lead Free Product is
ElecSuper PJA3441 R1 00001 P Channel MOSFET designed for charging circuits and DC DC power conversion
Product OverviewThe PJA3441 R1 00001 is a P-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits, offering fast switching, high-density cell design, and a reliable, rugged construction. This is a standard Pb-free product.Product AttributesBrand: ElecSuperModel: PJA3441 R1 00001Package: SOT-23Material: Halogen freeCertifications: UL 94V-0Color:
N channel power MOSFET FM 3040K H designed for stable performance in power switching and UPS systems
Product OverviewThe 3040K/H is an N-channel enhancement mode power MOSFET utilizing advanced trench technology. It offers extremely low RDS(on), good stability and uniformity, and is 100% avalanche tested. This device is suitable for use in UPS, power switching, and general purpose applications, providing excellent package for good heat dissipation.Product AttributesBrand: (FINE MADE MICROELECTRONICS GROUP CO., LTD.)Model: 3040K/HFile Number: S&CIC1966Technology: N-channel
Low Gate Charge N Channel MOSFET ElecSuper AO4430 Designed for Power Switching and Charging Circuits
Product OverviewThe AO4430 is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This product is Pb-free and Halogen-free.Product AttributesBrand: ElecSuperMaterial: Halogen freeCertifications: UL 94V-0Color: Not specifiedOrigin: Not specifiedTechnical SpecificationsParameterSymbolConditionsMin.Typ
Fast Switching P channel 20V MOSFET with Low Gate Charge and Reduced Cdv dt Effect FETek FKUC2301
Product Overview The FKUC2301 is a P-channel, 20V Fast Switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for small power switching and load switch applications. This device meets RoHS and Green Product requirements with full function reliability approval. Key advantages include low gate charge and reduced Cdv/dt effect. Product Attributes Brand: FETek Technology Corp. Product Series: FKUC2301 Channel
Low gate charge N Channel MOSFET ElecSuper 5N10 ES designed for DC DC conversion and power switching
Product OverviewThe 5N10-ES is an N-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and Halogen-free.Product AttributesBrand: ElecSuper IncorporatedModel: 5N10-ESMaterial: Halogen freeCertifications: UL 94V-0Color: Not specifiedOrigin: Not specifiedTechnical SpecificationsParameterSymbolTest
High Current Drain N Channel Trench MOSFET FM 055N85 Ideal for E Bike Controller and High Frequency Circuit
Product OverviewThe 055N85 is an N-Channel Trench Power MOSFET from Fine Made Microelectronics Group Co., Ltd. It is specifically designed for E-Bike controller applications, offering ultra-low on-resistance and high UIS (Unity Inverse Series) capabilities with 100% testing. This MOSFET is suitable for 64V E-Bike controllers, hard-switched, and high-frequency circuits, as well as Uninterruptible Power Supply systems.Product AttributesBrand: Fine Made Microelectronics Group Co
N Channel FM 4080K Trench Power MOSFET Featuring Fully Characterized Avalanche Voltage and Current Ratings
Product OverviewThe 4080K is an N-Channel Trench Power MOSFET designed for high-performance applications. It features a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, and excellent stability and uniformity. Its robust package ensures good heat dissipation, making it suitable for load switches, hard-switched and high-frequency circuits, and uninterruptible power supplies.Product AttributesBrand: SHEN ZHEN FINE MADE ELECTRONIC
Low RDS on N channel MOSFET FM 6888K with 68 volt drain source voltage and avalanche energy rating
Product OverviewThe 6888K is a 68V N-channel enhancement mode MOSFET from SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. Utilizing advanced trench technology, it offers extremely low RDS(on) and low gate charge, making it suitable for a wide range of applications requiring fast switching performance. The device is 100% avalanche tested.Product AttributesBrand: SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.Model: 6888KOrigin: ChinaCertifications: S&CIC1741 (File Number
ElecSuper AO4840 ES N Channel Enhancement Mode MOSFET for DC DC Conversion and Charging Circuits
Product OverviewThe AO4840-ES is an N-Channel enhancement mode MOSFET designed using advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This product is Pb-free and features a high-density cell design for low RDS(on), fast switching, and is avalanche rated.Product AttributesBrand: ElecSuperMaterial: Halogen freeCertifications: UL 94V-0Product Series: SuperMOSPac
Power Management and Load Switching Solutions Featuring FM 2060A N MOS N Channel Trench Power MOSFET
Product OverviewThe 2060A is an N-Channel Trench Power MOSFET featuring advanced trench technology for excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. It offers high power and current handling capability, making it suitable for a wide variety of applications including battery protection, load switching, and power management. This lead-free product has undergone 100% UIS and Vds testing.Product AttributesBrand: SHEN ZHEN FINE MADE
N Channel MOSFET ElecSuper BSS138KA with High Density Cell Design and UL 94V 0 Flammability Rating
Product Overview The BSS138KA is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits, offering features like 60V BVDSS, low RDS(ON), high density cell design, and avalanche rating. This standard product is Pb-free and halogen-free. Product Attributes Brand: SuperMOS (ElecSuper) Package: SOT23-3L Material: Halogen free
Trenched MOSFET FETek FKBB3002 designed for power management in synchronous buck converter circuits
Product OverviewThe FKBB3002 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements with 100% EAS guaranteed and full function reliability approval. Key advantages include super low gate charge and excellent CdV/dt effect decline, enabled by advanced high cell density trench technology.Product AttributesBrand: FETek
High current N channel MOSFET FM 6080D with 68V voltage rating low RDS on and fast switching speed
Product OverviewThe 6080D is a 68V N-channel enhancement mode MOSFET utilizing advanced trench technology. It offers extremely low RDS(on) with low gate charge, making it suitable for a wide variety of applications. Key features include fast switching and 100% avalanche testing.Product AttributesBrand: SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. (Superchip)Origin: ChinaModel: 6080DVoltage Rating: 68VChannel Type: N-channelMode: Enhancement modePackage Type: TO-263Technica
ElecSuper FDG6316P ES MOSFET P Channel type optimized for power switching and DC DC conversion tasks
Product OverviewThe FDG6316P-ES is a P-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switching, and charging circuits, offering fast switching, high-density cell design, and a reliable, rugged construction with avalanche rating and low leakage current.Product AttributesBrand: SuperMOSPart Number: FDG6316P-ESPackage: SOT23-6LMaterial: Halogen free, Pb-freeCertifications
Low Gate Charge MOSFET ElecSuper ESJ2302 Designed for DC DC Conversion and Power Switch Applications
Product OverviewThe ESJ2302 is an N-Channel enhancement mode MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and halogen-free.Product AttributesBrand: ElecSuperProduct Series: SuperMOSMaterial: Halogen freeCertifications: UL 94V-0ESD ProtectedTechnical SpecificationsParameterSymbolTest
ElecSuper BSS84 ES P channel MOSFET offering fast switching and avalanche rating for power circuits
BSS84(ES) SuperMOS - P-channel MOSFETThe BSS84(ES) is a P-Channel enhancement mode MOSFET utilizing advanced technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and Halogen free, offering fast switching, high density cell design, and avalanche rating.Product AttributesBrand: ElecSuperModel: BSS84(ES)Package: SOT-23Material: Halogen freeCertifications: UL 94V-0Color:
