Single FETs, MOSFETs
FMS Formosa Microsemi AS2306 N Channel Power MOSFET Featuring TrenchFET Technology in SOT 23 Package
Product OverviewThe AS2306 is a N-Channel Power MOSFET in a SOT-23 package, designed for load switching in portable devices and DC/DC converters. It features TrenchFET technology for enhanced performance.Product AttributesBrand: Anbonsemi (inferred from URL)Package Type: SOT-23Channel Type: N-ChannelEncapsulation: PlasticTechnical SpecificationsCharacteristicSymbolMinTypMaxUnitNotesDrain-Source VoltageBVDSS20V(ID = 250uA,VGS=0V)Gate Threshold VoltageVGS(th)0.51.5V(ID =250uA
N channel MOSFET FETek FKBB3052 featuring fast switching and low leakage current for power conversion
Product Overview The FKBB3052 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full function reliability approval. Product Attributes Brand: FETek Technology Corp. Product Type: N-Ch 30V Fast Switching MOSFETs Certifications: RoHS, Green Device Available Origin: Taiwan (implied by .tw domain)
Load switching P Channel MOSFET FUXINSEMI FDN340P featuring ultra low on resistance and compact size
Product OverviewThe FDN340P is a P-Channel SMD MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is ideal for load switching in portable devices and DC/DC converters.Product AttributesBrand: Fuxin Semiconductor (implied by www.fuxinsemi.com)Package: SOT-23Technical SpecificationsParameterSymbolTest ConditionMin.Typ.Max.UnitDrain-Source VoltageV(BR)DSSVGS = 0V, ID =-250A-20VZero Gate Voltage Drain CurrentIDSSVDS
synchronous buck converter p channel mosfet FETek FKD3031 with super low gate charge characteristics
Product OverviewThe FKD3031 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements with 100% EAS guaranteed and full function reliability approved. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology.Product AttributesBrand: FETek Technology Corp
Versatile P Channel MOSFET ElecSuper AO3415A Suitable for Power Switch Charging and DC DC Conversion
Product OverviewThe AO3415A is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and features a high-density cell design for low RDS(on), fast switching, and is avalanche rated.Product AttributesBrand: ElecSuperModel: AO3415APackage: SOT23-3LMaterial: Halogen
High reliability P Channel MOSFET ElecSuper DMP2240UDM ES for power conversion and charging circuits
Product OverviewThe DMP2240UDM-ES is a P-Channel enhancement MOS Field Effect Transistor from ElecSuper, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuit applications, offering fast switching, high-density cell design, and a reliable, rugged construction.Product AttributesBrand: ElecSuperModel: DMP2240UDM-ESPackage: SOT23-6LMaterial: Halogen freeCertifications: UL 94V-0Color
Battery Protection and Switching MOSFET FUXINSEMI FS8205A N Channel with Low On Resistance Technology
Product OverviewThe FS8205A is an N-Channel Enhancement Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is suitable for battery protection and switching applications.Product AttributesBrand: Fuxin SemiconductorProduct Code: FS8205AMarking: 8205APackage: SOT-23-6LTechnical SpecificationsParameterSymbolTest ConditionMin.Typ.Max.UnitAbsolute Maximum RatingsVDS20VVGS±12VID6AIDM25APD1.5WTJ-55~+150TSTG-55~
N channel MOSFET FETek FKBA3004 with high cell density trench technology and fast switching capability
Product OverviewThe FKBA3004 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it suitable for various applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval.Product AttributesBrand: FETek Technology Corp.Certifications: RoHS, Green Product, 100% EAS GuaranteedTechnology: Advanced high
High Reliability P Channel MOSFET ElecSuper ESN7401 Suitable for Various Power Applications
Product OverviewThe ESN7401 is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and halogen-free.Product AttributesBrand: ElecSuperPart Number: ESN7401Package: PDFN3X3-8LMaterial: Halogen freeFlammability Rating: UL 94V-0Certifications: Pb-freeReel Size: 13
Low Gate Charge N Channel MOSFET FETek FKBA6006 with High Cell Density Trench and RoHS Certification
Product OverviewThe FKBA6006 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full function reliability approval.Product AttributesBrand: FETek Technology Corp.Product Line: FKBA6006Type: N-Ch Fast Switching MOSFETCertifications: RoHS, Green ProductKey Features: 100% EAS
P channel MOSFET featuring low on resistance and fast switching FETek FKS3115 for power management
Product OverviewThe FKS3115 is a high cell density trenched P-channel MOSFET designed for fast switching applications. It offers excellent on-resistance (RDSON) and low gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval.Product AttributesBrand: FETekProduct Line: FKS3115Type: P-Channel MOSFETCertifications: RoHS, Green ProductKey
ElecSuper 2N7002T HAF ES MOSFET N Channel Device Optimized for Charging Circuit and Power Conversion
Product OverviewThe 2N7002T-HAF-ES is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and halogen-free.Product AttributesBrand: SuperMOS (ElecSuper)Material: Halogen freeCertifications: UL 94V-0ESD Protection: HBM: 2kVTechnical SpecificationsParameterSymbolTest
Power Switching N Channel MOSFET ElecSuper FSS2302S ES with Low Gate Charge and Halogen Free Material
Product OverviewThe FSS2302S-ES is an N-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and halogen-free.Product AttributesBrand: ElecSuperModel: FSS2302S-ESPackage: SOT-23Material: Halogen freeCertifications: UL 94V-0ESD ProtectedTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ
Power management MOSFET FM SI2301 10V P channel type with low on resistance and compact SOT 23 package
Product OverviewThis document describes the 10V P-channel enhancement mode MOSFET from SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. It features advanced processing technology, extremely low on-resistance, and a high-density cell design, making it suitable for various applications requiring efficient power management. The device is housed in a SOT-23 package.Product AttributesBrand: FINE MADE ()Origin: ChinaProduct Code: 2301File Number: S&CIC1596Website: www.superchip
High Reliability Low Gate Charge P Channel MOSFET ElecSuper AO4805 for DC DC Conversion and Power Switch
AO4805 P-Channel MOSFETThe AO4805 is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is Pb-free and Halogen free.Product AttributesBrand: ElecSuperMaterial: Halogen freeCertifications: UL 94V-0Technical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitAbsolute Maximum Rating
FM 3401S C P Channel Power MOSFET Featuring High Current and Power Dissipation in SOT 23 Package
Product OverviewThe 3401S/C is a P-Channel Trench Power MOSFET from Fine Made Microelectronics Group Co., Ltd. It offers high power and current handling capability, making it suitable for applications such as PWM, load switching, and power management. This lead-free product is available in a surface mount SOT-23 package.Product AttributesBrand: FINE MADE MICROELECTRONICS GROUP CO., LTD.Model: 3401S/CFile Number: S&CIC1950Certifications: Lead Free Product is AcquiredPackage:
High Cell Density Complementary MOSFETs FETek FKS4907 N Channel and P Channel for Power Applications
FKS4907 N-Ch and P-Ch Fast Switching MOSFETsThe FKS4907 is a high-performance complementary N-channel and P-channel MOSFET pair featuring high cell density. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. The FKS4907 meets RoHS and Green Product requirements and is 100% EAS guaranteed with full functional reliability.Product AttributesBrand: FETek Technology Corp.Certifications: RoHS, Green ProductTechn
N Channel MOSFET ElecSuper ESN4186 optimized for charging circuits power switch and DC DC conversion
Product OverviewThe ESN4186 is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits, offering high density cell design for low RDS(on), reliability, and avalanche rating.Product AttributesBrand: ElecSuperPart Number: ESN4186Material: Halogen freeCertifications: UL 94V-0Package: PDFN3*3-8LPacking: Tape & Reel, 5,000 PCS per reelColor: Not
P Channel MOSFET ElecSuper CJ3407 ES suitable for DC DC conversion power switch and charging circuit
Product OverviewThe CJ3407-ES is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is Pb-free and Halogen free.Product AttributesBrand: ElecSuperMaterial: Halogen freeCertifications: UL 94V-0Color: Not specifiedOrigin: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionsMi
Power Switch MOSFET ElecSuper ES35N06A Featuring Low RDS ON and Halogen Free Material
Product OverviewThe ES35N06A is an N-Channel enhancement mode MOS Field Effect Transistor from ElecSuper, utilizing advanced technology and design to achieve excellent RDS(ON) with low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuit applications. This product is Pb-free and Halogen-free.Product AttributesBrand: ElecSuperModel: ES35N06APackage: TO-252Material: Halogen freeCertifications: UL 94V-0Origin: Not specifiedColor: Not specifiedTech
